DE69213482T2 - Beschichtungszusammensetzung zum Herstellen von isolierenden Schichten und Masken - Google Patents
Beschichtungszusammensetzung zum Herstellen von isolierenden Schichten und MaskenInfo
- Publication number
- DE69213482T2 DE69213482T2 DE69213482T DE69213482T DE69213482T2 DE 69213482 T2 DE69213482 T2 DE 69213482T2 DE 69213482 T DE69213482 T DE 69213482T DE 69213482 T DE69213482 T DE 69213482T DE 69213482 T2 DE69213482 T2 DE 69213482T2
- Authority
- DE
- Germany
- Prior art keywords
- masks
- production
- coating composition
- insulating layers
- insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/46—Antireflective coatings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0276—Photolithographic processes using an anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Paints Or Removers (AREA)
- Laminated Bodies (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/637,903 US5100503A (en) | 1990-09-14 | 1991-01-07 | Silica-based anti-reflective planarizing layer |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69213482D1 DE69213482D1 (de) | 1996-10-17 |
DE69213482T2 true DE69213482T2 (de) | 1998-06-18 |
Family
ID=24557829
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69213482T Expired - Fee Related DE69213482T2 (de) | 1991-01-07 | 1992-01-06 | Beschichtungszusammensetzung zum Herstellen von isolierenden Schichten und Masken |
Country Status (3)
Country | Link |
---|---|
US (1) | US5100503A (de) |
EP (1) | EP0494744B1 (de) |
DE (1) | DE69213482T2 (de) |
Families Citing this family (101)
Publication number | Priority date | Publication date | Assignee | Title |
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US5362591A (en) * | 1989-10-09 | 1994-11-08 | Hitachi Ltd. Et Al. | Mask having a phase shifter and method of manufacturing same |
EP0464492B1 (de) * | 1990-06-21 | 1999-08-04 | Matsushita Electronics Corporation | Photomaske, die in der Photolithographie benutzt wird und ein Herstellungsverfahren derselben |
US5578402A (en) * | 1990-06-21 | 1996-11-26 | Matsushita Electronics Corporation | Photomask used by photolithography and a process of producing same |
US5527872A (en) * | 1990-09-14 | 1996-06-18 | At&T Global Information Solutions Company | Electronic device with a spin-on glass dielectric layer |
US5302198A (en) * | 1990-09-14 | 1994-04-12 | Ncr Corporation | Coating solution for forming glassy layers |
US5472488A (en) * | 1990-09-14 | 1995-12-05 | Hyundai Electronics America | Coating solution for forming glassy layers |
DE69132622T2 (de) * | 1990-09-21 | 2002-02-07 | Dainippon Printing Co Ltd | Verfahren zur Herstellung einer Phasenschieber-Fotomaske |
US5254418A (en) * | 1990-10-22 | 1993-10-19 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing photomask |
US6773864B1 (en) * | 1991-11-15 | 2004-08-10 | Shipley Company, L.L.C. | Antihalation compositions |
US6165697A (en) * | 1991-11-15 | 2000-12-26 | Shipley Company, L.L.C. | Antihalation compositions |
US5286607A (en) * | 1991-12-09 | 1994-02-15 | Chartered Semiconductor Manufacturing Pte Ltd. | Bi-layer resist process for semiconductor processing |
JPH05343308A (ja) * | 1992-06-09 | 1993-12-24 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
US5873931A (en) * | 1992-10-06 | 1999-02-23 | Minnesota Mining And Manufacturing Company | Coating composition having anti-reflective and anti-fogging properties |
US5480748A (en) * | 1992-10-21 | 1996-01-02 | International Business Machines Corporation | Protection of aluminum metallization against chemical attack during photoresist development |
US5264076A (en) * | 1992-12-17 | 1993-11-23 | At&T Bell Laboratories | Integrated circuit process using a "hard mask" |
US5387480A (en) * | 1993-03-08 | 1995-02-07 | Dow Corning Corporation | High dielectric constant coatings |
US5492958A (en) * | 1993-03-08 | 1996-02-20 | Dow Corning Corporation | Metal containing ceramic coatings |
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US5324689A (en) * | 1993-07-28 | 1994-06-28 | Taiwan Semiconductor Manufacturing Company | Critical dimension control with a planarized underlayer |
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US5465859A (en) * | 1994-04-28 | 1995-11-14 | International Business Machines Corporation | Dual phase and hybrid phase shifting mask fabrication using a surface etch monitoring technique |
US5585186A (en) * | 1994-12-12 | 1996-12-17 | Minnesota Mining And Manufacturing Company | Coating composition having anti-reflective, and anti-fogging properties |
US5950106A (en) * | 1996-05-14 | 1999-09-07 | Advanced Micro Devices, Inc. | Method of patterning a metal substrate using spin-on glass as a hard mask |
TW354392B (en) * | 1996-07-03 | 1999-03-11 | Du Pont | Photomask blanks |
US6040053A (en) * | 1996-07-19 | 2000-03-21 | Minnesota Mining And Manufacturing Company | Coating composition having anti-reflective and anti-fogging properties |
US6174631B1 (en) | 1997-02-10 | 2001-01-16 | E. I. Du Pont De Nemours And Company | Attenuating phase shift photomasks |
US6057239A (en) | 1997-12-17 | 2000-05-02 | Advanced Micro Devices, Inc. | Dual damascene process using sacrificial spin-on materials |
US6156485A (en) * | 1999-01-19 | 2000-12-05 | Taiwan Semiconductor Manufacturing Company Ltd. | Film scheme to solve high aspect ratio metal etch masking layer selectivity and improve photo I-line PR resolution capability in quarter-micron technology |
US6372621B1 (en) * | 1999-04-19 | 2002-04-16 | United Microelectronics Corp. | Method of forming a bonding pad on a semiconductor chip |
CA2374944A1 (en) * | 1999-06-10 | 2000-12-21 | Nigel Hacker | Spin-on-glass anti-reflective coatings for photolithography |
US6824879B2 (en) | 1999-06-10 | 2004-11-30 | Honeywell International Inc. | Spin-on-glass anti-reflective coatings for photolithography |
US6268457B1 (en) | 1999-06-10 | 2001-07-31 | Allied Signal, Inc. | Spin-on glass anti-reflective coatings for photolithography |
US6890448B2 (en) * | 1999-06-11 | 2005-05-10 | Shipley Company, L.L.C. | Antireflective hard mask compositions |
US20020015910A1 (en) * | 2000-01-12 | 2002-02-07 | William Roberts | Anti-reflective coating conformality control |
EP1160843A1 (de) * | 2000-05-30 | 2001-12-05 | Semiconductor 300 GmbH & Co. KG | Planarisierende Antireflektionsschicht mit verbesserter Lichtabsorption |
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US6368400B1 (en) | 2000-07-17 | 2002-04-09 | Honeywell International | Absorbing compounds for spin-on-glass anti-reflective coatings for photolithography |
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JP2004038142A (ja) | 2002-03-03 | 2004-02-05 | Shipley Co Llc | ポリシロキサンを製造する方法及びそれを含むフォトレジスト組成物 |
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US4557797A (en) * | 1984-06-01 | 1985-12-10 | Texas Instruments Incorporated | Resist process using anti-reflective coating |
JPS60262150A (ja) * | 1984-06-11 | 1985-12-25 | Nippon Telegr & Teleph Corp <Ntt> | 三層レジスト用中間層材料及びそれを用いた三層レジストパタン形成方法 |
KR930010248B1 (ko) * | 1984-09-14 | 1993-10-15 | 가부시끼가이샤 히다찌세이사꾸쇼 | 패턴 형성 방법 |
US4620986A (en) * | 1984-11-09 | 1986-11-04 | Intel Corporation | MOS rear end processing |
US4587138A (en) * | 1984-11-09 | 1986-05-06 | Intel Corporation | MOS rear end processing |
US4621042A (en) * | 1985-08-16 | 1986-11-04 | Rca Corporation | Absorptive planarizing layer for optical lithography |
JPS6247045A (ja) * | 1985-08-20 | 1987-02-28 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | ポリイミド組成物およびパタ−ンを有する膜の形成法 |
US4692205A (en) * | 1986-01-31 | 1987-09-08 | International Business Machines Corporation | Silicon-containing polyimides as oxygen etch stop and dual dielectric coatings |
-
1991
- 1991-01-07 US US07/637,903 patent/US5100503A/en not_active Expired - Lifetime
-
1992
- 1992-01-06 EP EP92300079A patent/EP0494744B1/de not_active Expired - Lifetime
- 1992-01-06 DE DE69213482T patent/DE69213482T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0494744B1 (de) | 1996-09-11 |
US5100503A (en) | 1992-03-31 |
EP0494744A1 (de) | 1992-07-15 |
DE69213482D1 (de) | 1996-10-17 |
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