DE69213482D1 - Beschichtungszusammensetzung zum Herstellen von isolierenden Schichten und Masken - Google Patents
Beschichtungszusammensetzung zum Herstellen von isolierenden Schichten und MaskenInfo
- Publication number
- DE69213482D1 DE69213482D1 DE69213482T DE69213482T DE69213482D1 DE 69213482 D1 DE69213482 D1 DE 69213482D1 DE 69213482 T DE69213482 T DE 69213482T DE 69213482 T DE69213482 T DE 69213482T DE 69213482 D1 DE69213482 D1 DE 69213482D1
- Authority
- DE
- Germany
- Prior art keywords
- masks
- production
- coating composition
- insulating layers
- insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/46—Antireflective coatings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0276—Photolithographic processes using an anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Paints Or Removers (AREA)
- Laminated Bodies (AREA)
- Silicon Polymers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/637,903 US5100503A (en) | 1990-09-14 | 1991-01-07 | Silica-based anti-reflective planarizing layer |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69213482D1 true DE69213482D1 (de) | 1996-10-17 |
DE69213482T2 DE69213482T2 (de) | 1998-06-18 |
Family
ID=24557829
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69213482T Expired - Fee Related DE69213482T2 (de) | 1991-01-07 | 1992-01-06 | Beschichtungszusammensetzung zum Herstellen von isolierenden Schichten und Masken |
Country Status (3)
Country | Link |
---|---|
US (1) | US5100503A (de) |
EP (1) | EP0494744B1 (de) |
DE (1) | DE69213482T2 (de) |
Families Citing this family (101)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5362591A (en) * | 1989-10-09 | 1994-11-08 | Hitachi Ltd. Et Al. | Mask having a phase shifter and method of manufacturing same |
DE69131497T2 (de) * | 1990-06-21 | 2000-03-30 | Matsushita Electronics Corp., Kadoma | Photomaske, die in der Photolithographie benutzt wird und ein Herstellungsverfahren derselben |
US5578402A (en) * | 1990-06-21 | 1996-11-26 | Matsushita Electronics Corporation | Photomask used by photolithography and a process of producing same |
US5527872A (en) * | 1990-09-14 | 1996-06-18 | At&T Global Information Solutions Company | Electronic device with a spin-on glass dielectric layer |
US5472488A (en) * | 1990-09-14 | 1995-12-05 | Hyundai Electronics America | Coating solution for forming glassy layers |
US5302198A (en) * | 1990-09-14 | 1994-04-12 | Ncr Corporation | Coating solution for forming glassy layers |
DE69131878T2 (de) * | 1990-09-21 | 2000-07-20 | Dai Nippon Printing Co., Ltd. | Verfahren zur Herstellung einer Phasenverschiebungs-Photomaske |
US5254418A (en) * | 1990-10-22 | 1993-10-19 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing photomask |
US6773864B1 (en) * | 1991-11-15 | 2004-08-10 | Shipley Company, L.L.C. | Antihalation compositions |
US6165697A (en) * | 1991-11-15 | 2000-12-26 | Shipley Company, L.L.C. | Antihalation compositions |
US5286607A (en) * | 1991-12-09 | 1994-02-15 | Chartered Semiconductor Manufacturing Pte Ltd. | Bi-layer resist process for semiconductor processing |
JPH05343308A (ja) * | 1992-06-09 | 1993-12-24 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
US5873931A (en) * | 1992-10-06 | 1999-02-23 | Minnesota Mining And Manufacturing Company | Coating composition having anti-reflective and anti-fogging properties |
US5480748A (en) * | 1992-10-21 | 1996-01-02 | International Business Machines Corporation | Protection of aluminum metallization against chemical attack during photoresist development |
US5264076A (en) * | 1992-12-17 | 1993-11-23 | At&T Bell Laboratories | Integrated circuit process using a "hard mask" |
US5387480A (en) * | 1993-03-08 | 1995-02-07 | Dow Corning Corporation | High dielectric constant coatings |
US5492958A (en) * | 1993-03-08 | 1996-02-20 | Dow Corning Corporation | Metal containing ceramic coatings |
US6570221B1 (en) * | 1993-07-27 | 2003-05-27 | Hyundai Electronics America | Bonding of silicon wafers |
US5324689A (en) * | 1993-07-28 | 1994-06-28 | Taiwan Semiconductor Manufacturing Company | Critical dimension control with a planarized underlayer |
US5591680A (en) * | 1993-12-06 | 1997-01-07 | Micron Communications | Formation methods of opaque or translucent films |
US5470681A (en) * | 1993-12-23 | 1995-11-28 | International Business Machines Corporation | Phase shift mask using liquid phase oxide deposition |
US5465859A (en) * | 1994-04-28 | 1995-11-14 | International Business Machines Corporation | Dual phase and hybrid phase shifting mask fabrication using a surface etch monitoring technique |
US5585186A (en) * | 1994-12-12 | 1996-12-17 | Minnesota Mining And Manufacturing Company | Coating composition having anti-reflective, and anti-fogging properties |
US5950106A (en) * | 1996-05-14 | 1999-09-07 | Advanced Micro Devices, Inc. | Method of patterning a metal substrate using spin-on glass as a hard mask |
TW354392B (en) * | 1996-07-03 | 1999-03-11 | Du Pont | Photomask blanks |
US6040053A (en) * | 1996-07-19 | 2000-03-21 | Minnesota Mining And Manufacturing Company | Coating composition having anti-reflective and anti-fogging properties |
US6174631B1 (en) | 1997-02-10 | 2001-01-16 | E. I. Du Pont De Nemours And Company | Attenuating phase shift photomasks |
US6057239A (en) | 1997-12-17 | 2000-05-02 | Advanced Micro Devices, Inc. | Dual damascene process using sacrificial spin-on materials |
US6156485A (en) * | 1999-01-19 | 2000-12-05 | Taiwan Semiconductor Manufacturing Company Ltd. | Film scheme to solve high aspect ratio metal etch masking layer selectivity and improve photo I-line PR resolution capability in quarter-micron technology |
US6372621B1 (en) * | 1999-04-19 | 2002-04-16 | United Microelectronics Corp. | Method of forming a bonding pad on a semiconductor chip |
US6824879B2 (en) | 1999-06-10 | 2004-11-30 | Honeywell International Inc. | Spin-on-glass anti-reflective coatings for photolithography |
WO2000077575A1 (en) * | 1999-06-10 | 2000-12-21 | Alliedsignal Inc. | Spin-on-glass anti-reflective coatings for photolithography |
US6268457B1 (en) * | 1999-06-10 | 2001-07-31 | Allied Signal, Inc. | Spin-on glass anti-reflective coatings for photolithography |
US6890448B2 (en) * | 1999-06-11 | 2005-05-10 | Shipley Company, L.L.C. | Antireflective hard mask compositions |
US20020015910A1 (en) * | 2000-01-12 | 2002-02-07 | William Roberts | Anti-reflective coating conformality control |
EP1160843A1 (de) * | 2000-05-30 | 2001-12-05 | Semiconductor 300 GmbH & Co. KG | Planarisierende Antireflektionsschicht mit verbesserter Lichtabsorption |
US6420088B1 (en) | 2000-06-23 | 2002-07-16 | International Business Machines Corporation | Antireflective silicon-containing compositions as hardmask layer |
US6368400B1 (en) | 2000-07-17 | 2002-04-09 | Honeywell International | Absorbing compounds for spin-on-glass anti-reflective coatings for photolithography |
TW594416B (en) * | 2001-05-08 | 2004-06-21 | Shipley Co Llc | Photoimageable composition |
KR20040075866A (ko) * | 2001-11-15 | 2004-08-30 | 허니웰 인터내셔날 인코포레이티드 | 포토리소그래피용 스핀-온 무반사 코팅 |
JP4557497B2 (ja) * | 2002-03-03 | 2010-10-06 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | シランモノマー及びポリマーを製造する方法及びそれを含むフォトレジスト組成物 |
JP2004038142A (ja) | 2002-03-03 | 2004-02-05 | Shipley Co Llc | ポリシロキサンを製造する方法及びそれを含むフォトレジスト組成物 |
DE10227807A1 (de) * | 2002-06-21 | 2004-01-22 | Honeywell Specialty Chemicals Seelze Gmbh | Silylalkylester von Anthracen- und Phenanthrencarbonsäuren |
FR2842533B1 (fr) * | 2002-07-18 | 2006-11-24 | Hynix Semiconductor Inc | Composition de revetement organique antireflet, procede de formation de motifs de photoresist a l'aide de cette composition et dispositif a semi-conducteur fabrique grace a ce procede |
KR100480235B1 (ko) * | 2002-07-18 | 2005-04-06 | 주식회사 하이닉스반도체 | 유기 반사방지막 조성물 및 이를 이용한 포토레지스트의패턴 형성 방법 |
KR100472031B1 (ko) * | 2002-08-07 | 2005-03-10 | 동부아남반도체 주식회사 | 반도체 소자 제조 방법 |
JP2006500769A (ja) * | 2002-09-20 | 2006-01-05 | ハネウェル・インターナショナル・インコーポレーテッド | 低k材料用の中間層接着促進剤 |
AU2003287194A1 (en) * | 2002-10-21 | 2004-05-13 | Shipley Company L.L.C. | Photoresists containing sulfonamide component |
EP1422566A1 (de) * | 2002-11-20 | 2004-05-26 | Shipley Company, L.L.C. | Mehrlagige Fotoresist-Systeme |
JP2004206082A (ja) * | 2002-11-20 | 2004-07-22 | Rohm & Haas Electronic Materials Llc | 多層フォトレジスト系 |
US20040229159A1 (en) * | 2003-02-23 | 2004-11-18 | Subbareddy Kanagasabapathy | Fluorinated Si-polymers and photoresists comprising same |
CN1570762B (zh) * | 2003-03-03 | 2010-10-13 | 罗姆和哈斯电子材料有限责任公司 | 聚合物和含有该聚合物的光刻胶 |
US7115534B2 (en) * | 2003-05-19 | 2006-10-03 | Applied Materials, Inc. | Dielectric materials to prevent photoresist poisoning |
DE602004009791T2 (de) * | 2003-05-23 | 2008-10-30 | Dow Corning Corp., Midland | Siloxan-harz basierte anti-reflektionsbeschichtung mit hoher nassätzgeschwindigkeit |
US7303785B2 (en) * | 2003-06-03 | 2007-12-04 | Shin-Etsu Chemical Co., Ltd. | Antireflective film material, and antireflective film and pattern formation method using the same |
US7202013B2 (en) * | 2003-06-03 | 2007-04-10 | Shin-Etsu Chemical Co., Ltd. | Antireflective film material, and antireflective film and pattern formation method using the same |
TW200523298A (en) | 2003-08-04 | 2005-07-16 | Honeywell Int Inc | Coating composition optimization for via fill and photolithography applications and methods of preparation thereof |
US8053159B2 (en) | 2003-11-18 | 2011-11-08 | Honeywell International Inc. | Antireflective coatings for via fill and photolithography applications and methods of preparation thereof |
JP4491283B2 (ja) * | 2004-06-10 | 2010-06-30 | 信越化学工業株式会社 | 反射防止膜形成用組成物を用いたパターン形成方法 |
JP4553113B2 (ja) * | 2004-06-10 | 2010-09-29 | 信越化学工業株式会社 | 多孔質膜形成用組成物、パターン形成方法、及び多孔質犠性膜 |
US8901268B2 (en) | 2004-08-03 | 2014-12-02 | Ahila Krishnamoorthy | Compositions, layers and films for optoelectronic devices, methods of production and uses thereof |
US7175944B2 (en) * | 2004-08-31 | 2007-02-13 | Micron Technology, Inc. | Prevention of photoresist scumming |
US20060255315A1 (en) * | 2004-11-19 | 2006-11-16 | Yellowaga Deborah L | Selective removal chemistries for semiconductor applications, methods of production and uses thereof |
CN101072813B (zh) * | 2004-12-17 | 2011-06-08 | 陶氏康宁公司 | 硅氧烷树脂涂料 |
EP1819844B1 (de) | 2004-12-17 | 2008-07-09 | Dow Corning Corporation | Verfahren zur ausbildung einer antireflexionsbeschichtung |
EP1762895B1 (de) * | 2005-08-29 | 2016-02-24 | Rohm and Haas Electronic Materials, L.L.C. | Antireflex-Zusammensetzungen für Hartmasken |
US7695890B2 (en) * | 2005-09-09 | 2010-04-13 | Brewer Science Inc. | Negative photoresist for silicon KOH etch without silicon nitride |
JP5464855B2 (ja) * | 2005-10-28 | 2014-04-09 | ダウ グローバル テクノロジーズ エルエルシー | シルセスキオキサン−チタニアハイブリッドポリマー |
JP4597844B2 (ja) | 2005-11-21 | 2010-12-15 | 信越化学工業株式会社 | フォトレジスト膜のリワーク方法 |
CN101371196B (zh) | 2006-02-13 | 2012-07-04 | 陶氏康宁公司 | 抗反射涂料 |
DE102006041006B4 (de) * | 2006-08-31 | 2018-05-03 | Advanced Micro Devices, Inc. | Verfahren zur Strukturierung von Kontaktätzstoppschichten unter Anwendung eines Planarisierungsprozesses |
US8026040B2 (en) * | 2007-02-20 | 2011-09-27 | Az Electronic Materials Usa Corp. | Silicone coating composition |
CN101622297A (zh) * | 2007-02-26 | 2010-01-06 | Az电子材料美国公司 | 制备硅氧烷聚合物的方法 |
US8642246B2 (en) * | 2007-02-26 | 2014-02-04 | Honeywell International Inc. | Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof |
KR101523393B1 (ko) | 2007-02-27 | 2015-05-27 | 이엠디 퍼포먼스 머티리얼스 코프. | 규소를 주성분으로 하는 반사 방지 코팅 조성물 |
US7709178B2 (en) * | 2007-04-17 | 2010-05-04 | Brewer Science Inc. | Alkaline-resistant negative photoresist for silicon wet-etch without silicon nitride |
WO2009088600A1 (en) | 2008-01-08 | 2009-07-16 | Dow Corning Toray Co., Ltd. | Silsesquioxane resins |
EP2238198A4 (de) * | 2008-01-15 | 2011-11-16 | Dow Corning | Silsesquioxanharze |
WO2009104552A1 (ja) * | 2008-02-18 | 2009-08-27 | 日産化学工業株式会社 | 環状アミノ基を有するシリコン含有レジスト下層膜形成組成物 |
JP5581225B2 (ja) * | 2008-03-04 | 2014-08-27 | ダウ・コーニング・コーポレイション | シルセスキオキサン樹脂 |
KR101541939B1 (ko) * | 2008-03-05 | 2015-08-04 | 다우 코닝 코포레이션 | 실세스퀴옥산 수지 |
US20090274974A1 (en) * | 2008-04-30 | 2009-11-05 | David Abdallah | Spin-on graded k silicon antireflective coating |
KR101749604B1 (ko) * | 2008-08-18 | 2017-06-21 | 닛산 가가쿠 고교 가부시키 가이샤 | 오늄기를 갖는 실리콘 함유 레지스트 하층막 형성 조성물 |
US7955782B2 (en) * | 2008-09-22 | 2011-06-07 | Honeywell International Inc. | Bottom antireflective coatings exhibiting enhanced wet strip rates, bottom antireflective coating compositions for forming bottom antireflective coatings, and methods for fabricating the same |
JP4719910B2 (ja) * | 2008-11-26 | 2011-07-06 | 国立大学法人東北大学 | 半導体装置の製造方法 |
US8809482B2 (en) | 2008-12-10 | 2014-08-19 | Dow Corning Corporation | Silsesquioxane resins |
KR20110096155A (ko) * | 2008-12-10 | 2011-08-29 | 다우 코닝 코포레이션 | 습식 에칭가능한 반사방지 코팅 |
CN102257435B (zh) | 2008-12-19 | 2014-01-22 | 日产化学工业株式会社 | 含有具有阴离子基的硅的抗蚀剂下层膜形成用组合物 |
US20100291475A1 (en) * | 2009-05-12 | 2010-11-18 | Chenghong Li | Silicone Coating Compositions |
JP5618095B2 (ja) | 2009-06-02 | 2014-11-05 | 日産化学工業株式会社 | スルフィド結合を有するシリコン含有レジスト下層膜形成組成物 |
US8557877B2 (en) | 2009-06-10 | 2013-10-15 | Honeywell International Inc. | Anti-reflective coatings for optically transparent substrates |
JP5534250B2 (ja) | 2009-09-16 | 2014-06-25 | 日産化学工業株式会社 | スルホンアミド基を有するシリコン含有レジスト下層膜形成組成物 |
KR102061530B1 (ko) | 2010-02-19 | 2020-01-02 | 닛산 가가쿠 가부시키가이샤 | 질소 함유환을 가지는 실리콘 함유 레지스트 하층막 형성 조성물 |
US8864898B2 (en) | 2011-05-31 | 2014-10-21 | Honeywell International Inc. | Coating formulations for optical elements |
US9011591B2 (en) | 2011-09-21 | 2015-04-21 | Dow Global Technologies Llc | Compositions and antireflective coatings for photolithography |
US9068086B2 (en) | 2011-12-21 | 2015-06-30 | Dow Global Technologies Llc | Compositions for antireflective coatings |
US9070548B2 (en) | 2012-03-06 | 2015-06-30 | Rohm And Haas Electronic Materials Llc | Metal hardmask compositions |
JP5742903B2 (ja) * | 2013-09-24 | 2015-07-01 | 大日本印刷株式会社 | フォトマスクブランクス |
JP5979268B2 (ja) * | 2015-03-06 | 2016-08-24 | 大日本印刷株式会社 | フォトマスクブランクス |
WO2016167892A1 (en) | 2015-04-13 | 2016-10-20 | Honeywell International Inc. | Polysiloxane formulations and coatings for optoelectronic applications |
JP6252623B2 (ja) * | 2016-05-20 | 2017-12-27 | 大日本印刷株式会社 | フォトマスクブランクス |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4269935A (en) * | 1979-07-13 | 1981-05-26 | Ionomet Company, Inc. | Process of doping silver image in chalcogenide layer |
US4493886A (en) * | 1982-05-11 | 1985-01-15 | University Patents, Inc. | Composition and method for forming amorphous chalcogenide films from solution |
KR890003903B1 (ko) * | 1983-06-29 | 1989-10-10 | 가부시끼가이샤 히다찌세이사꾸쇼 | 패턴 형성 방법 |
US4557797A (en) * | 1984-06-01 | 1985-12-10 | Texas Instruments Incorporated | Resist process using anti-reflective coating |
JPS60262150A (ja) * | 1984-06-11 | 1985-12-25 | Nippon Telegr & Teleph Corp <Ntt> | 三層レジスト用中間層材料及びそれを用いた三層レジストパタン形成方法 |
KR930010248B1 (ko) * | 1984-09-14 | 1993-10-15 | 가부시끼가이샤 히다찌세이사꾸쇼 | 패턴 형성 방법 |
US4620986A (en) * | 1984-11-09 | 1986-11-04 | Intel Corporation | MOS rear end processing |
US4587138A (en) * | 1984-11-09 | 1986-05-06 | Intel Corporation | MOS rear end processing |
US4621042A (en) * | 1985-08-16 | 1986-11-04 | Rca Corporation | Absorptive planarizing layer for optical lithography |
JPS6247045A (ja) * | 1985-08-20 | 1987-02-28 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | ポリイミド組成物およびパタ−ンを有する膜の形成法 |
US4692205A (en) * | 1986-01-31 | 1987-09-08 | International Business Machines Corporation | Silicon-containing polyimides as oxygen etch stop and dual dielectric coatings |
-
1991
- 1991-01-07 US US07/637,903 patent/US5100503A/en not_active Expired - Lifetime
-
1992
- 1992-01-06 DE DE69213482T patent/DE69213482T2/de not_active Expired - Fee Related
- 1992-01-06 EP EP92300079A patent/EP0494744B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0494744B1 (de) | 1996-09-11 |
EP0494744A1 (de) | 1992-07-15 |
US5100503A (en) | 1992-03-31 |
DE69213482T2 (de) | 1998-06-18 |
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