DE69131885T2 - Integrierte optische Halbleiteranordnung - Google Patents
Integrierte optische HalbleiteranordnungInfo
- Publication number
- DE69131885T2 DE69131885T2 DE69131885T DE69131885T DE69131885T2 DE 69131885 T2 DE69131885 T2 DE 69131885T2 DE 69131885 T DE69131885 T DE 69131885T DE 69131885 T DE69131885 T DE 69131885T DE 69131885 T2 DE69131885 T2 DE 69131885T2
- Authority
- DE
- Germany
- Prior art keywords
- optical waveguide
- light
- light absorption
- absorption layer
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000003287 optical effect Effects 0.000 title claims description 158
- 239000004065 semiconductor Substances 0.000 title claims description 50
- 230000031700 light absorption Effects 0.000 claims description 84
- 238000010521 absorption reaction Methods 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 8
- 230000001902 propagating effect Effects 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 2
- 238000010276 construction Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 description 8
- 238000004891 communication Methods 0.000 description 6
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 230000001427 coherent effect Effects 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000779 depleting effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
- Semiconductor Lasers (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5557790 | 1990-03-07 | ||
| JP3055447A JPH04211209A (ja) | 1990-03-07 | 1991-02-28 | 集積化光半導体素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69131885D1 DE69131885D1 (de) | 2000-02-10 |
| DE69131885T2 true DE69131885T2 (de) | 2000-06-15 |
Family
ID=26396334
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69131885T Expired - Fee Related DE69131885T2 (de) | 1990-03-07 | 1991-03-07 | Integrierte optische Halbleiteranordnung |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5121182A (enExample) |
| EP (1) | EP0446056B1 (enExample) |
| JP (1) | JPH04211209A (enExample) |
| DE (1) | DE69131885T2 (enExample) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5574742A (en) * | 1994-05-31 | 1996-11-12 | Lucent Technologies Inc. | Tapered beam expander waveguide integrated with a diode laser |
| JP2921397B2 (ja) * | 1994-06-14 | 1999-07-19 | 日本電気株式会社 | 非線形光学素子 |
| JP2982619B2 (ja) * | 1994-06-29 | 1999-11-29 | 日本電気株式会社 | 半導体光導波路集積型受光素子 |
| US5552603A (en) * | 1994-09-15 | 1996-09-03 | Martin Marietta Corporation | Bias and readout for multicolor quantum well detectors |
| US5500912A (en) * | 1995-05-02 | 1996-03-19 | Motorola, Inc. | Holographic optical isolator utilizing opto-electronic transmitter and receiver disposed in a package |
| JPH09153638A (ja) * | 1995-11-30 | 1997-06-10 | Nec Corp | 導波路型半導体受光装置およびその製造方法 |
| US6293688B1 (en) | 1999-11-12 | 2001-09-25 | Sparkolor Corporation | Tapered optical waveguide coupler |
| US6341189B1 (en) | 1999-11-12 | 2002-01-22 | Sparkolor Corporation | Lenticular structure for integrated waveguides |
| JP4168437B2 (ja) * | 2000-11-09 | 2008-10-22 | 日本電気株式会社 | 半導体受光素子 |
| JP2003152216A (ja) * | 2001-11-16 | 2003-05-23 | Anritsu Corp | 半導体受光素子 |
| US6956983B2 (en) * | 2002-05-31 | 2005-10-18 | Intel Corporation | Epitaxial growth for waveguide tapering |
| US6989284B2 (en) * | 2002-05-31 | 2006-01-24 | Intel Corporation | Fabrication of a waveguide taper through ion implantation |
| US6819839B2 (en) * | 2002-07-23 | 2004-11-16 | Intel Corporation | Tapered waveguide photodetector apparatus and methods |
| WO2006091741A2 (en) * | 2005-02-23 | 2006-08-31 | Georgia Tech Research Corporation | Edge viewing photodetector |
| JP2007073819A (ja) * | 2005-09-08 | 2007-03-22 | Mitsubishi Electric Corp | 半導体レーザおよび光送受信装置 |
| JP4168453B2 (ja) * | 2007-08-20 | 2008-10-22 | 日本電気株式会社 | 半導体受光素子 |
| JP5497996B2 (ja) * | 2008-05-26 | 2014-05-21 | 日本電信電話株式会社 | 導波路型デバイスにおける導波路終端方法 |
| US8290325B2 (en) * | 2008-06-30 | 2012-10-16 | Intel Corporation | Waveguide photodetector device and manufacturing method thereof |
| JP5074477B2 (ja) * | 2009-11-26 | 2012-11-14 | Ｎｔｔエレクトロニクス株式会社 | 光導波路デバイス |
| JP6318468B2 (ja) * | 2013-05-01 | 2018-05-09 | 富士通株式会社 | 導波路型半導体受光装置及びその製造方法 |
| JP6217137B2 (ja) * | 2013-05-22 | 2017-10-25 | 富士通株式会社 | 光半導体装置及びその製造方法 |
| JP6127103B2 (ja) * | 2015-09-30 | 2017-05-10 | 沖電気工業株式会社 | 半導体受光素子及びその製造方法 |
| CN111684342B (zh) * | 2018-02-08 | 2023-07-28 | 古河电气工业株式会社 | 光集成元件以及光模块 |
| JP7050962B2 (ja) * | 2019-01-09 | 2022-04-08 | 三菱電機株式会社 | 光半導体集積素子 |
| US11588062B2 (en) * | 2020-10-08 | 2023-02-21 | Globalfoundries U.S. Inc. | Photodetectors including a coupling region with multiple tapers |
| JP6881703B1 (ja) * | 2020-10-09 | 2021-06-02 | 三菱電機株式会社 | 導波路型受光素子 |
| CN114171613A (zh) * | 2021-12-06 | 2022-03-11 | 苏州旭创科技有限公司 | 光电探测器 |
| CN114171614B (zh) * | 2021-12-06 | 2024-07-16 | 苏州旭创科技有限公司 | 光电探测器 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57132105A (en) * | 1981-02-09 | 1982-08-16 | Nec Corp | Buried type optical waveguide path |
| US4773720A (en) * | 1986-06-03 | 1988-09-27 | General Electric Company | Optical waveguide |
| JP2633234B2 (ja) * | 1986-07-04 | 1997-07-23 | 三菱電機株式会社 | 光半導体素子 |
| JPS63278281A (ja) * | 1987-05-09 | 1988-11-15 | Fujitsu Ltd | 光検出器 |
| US4857973A (en) * | 1987-05-14 | 1989-08-15 | The United States Of America As Represented By The Secretary Of The Air Force | Silicon waveguide with monolithically integrated Schottky barrier photodetector |
-
1991
- 1991-02-28 JP JP3055447A patent/JPH04211209A/ja active Pending
- 1991-03-07 DE DE69131885T patent/DE69131885T2/de not_active Expired - Fee Related
- 1991-03-07 US US07/665,775 patent/US5121182A/en not_active Expired - Lifetime
- 1991-03-07 EP EP91301921A patent/EP0446056B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0446056A3 (enExample) | 1994-01-05 |
| EP0446056A2 (en) | 1991-09-11 |
| EP0446056B1 (en) | 2000-01-05 |
| DE69131885D1 (de) | 2000-02-10 |
| US5121182A (en) | 1992-06-09 |
| JPH04211209A (ja) | 1992-08-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |