DE69125927D1 - Festkörper-bildaufnahmevorrichtung und verfahren zur herstellung derselben - Google Patents
Festkörper-bildaufnahmevorrichtung und verfahren zur herstellung derselbenInfo
- Publication number
- DE69125927D1 DE69125927D1 DE69125927T DE69125927T DE69125927D1 DE 69125927 D1 DE69125927 D1 DE 69125927D1 DE 69125927 T DE69125927 T DE 69125927T DE 69125927 T DE69125927 T DE 69125927T DE 69125927 D1 DE69125927 D1 DE 69125927D1
- Authority
- DE
- Germany
- Prior art keywords
- producing
- same
- imaging device
- solid state
- state imaging
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000003384 imaging method Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000007787 solid Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/50—Constructional details
- H04N23/54—Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP31094290 | 1990-11-16 | ||
PCT/JP1991/001567 WO1992009105A1 (en) | 1990-11-16 | 1991-11-15 | Solid-state imaging device and method of manufacturing the same |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69125927D1 true DE69125927D1 (de) | 1997-06-05 |
DE69125927T2 DE69125927T2 (de) | 1997-09-18 |
Family
ID=18011244
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69125927T Expired - Fee Related DE69125927T2 (de) | 1990-11-16 | 1991-11-15 | Festkörper-bildaufnahmevorrichtung und verfahren zur herstellung derselben |
Country Status (6)
Country | Link |
---|---|
US (1) | US5321297A (de) |
EP (1) | EP0511404B1 (de) |
JP (1) | JP3128297B2 (de) |
KR (1) | KR960000223B1 (de) |
DE (1) | DE69125927T2 (de) |
WO (1) | WO1992009105A1 (de) |
Families Citing this family (63)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100357178B1 (ko) * | 1999-05-14 | 2002-10-18 | 주식회사 하이닉스반도체 | 고체 촬상 소자 및 그의 제조 방법 |
JPH05335531A (ja) * | 1992-05-27 | 1993-12-17 | Sharp Corp | 固体撮像装置 |
JPH06151797A (ja) * | 1992-11-11 | 1994-05-31 | Sony Corp | 固体撮像素子 |
GB9301405D0 (en) * | 1993-01-25 | 1993-03-17 | Philips Electronics Uk Ltd | An image sensor |
KR950002410A (ko) * | 1993-06-30 | 1995-01-04 | 김광호 | 고체 촬상 장치 |
JP2950714B2 (ja) * | 1993-09-28 | 1999-09-20 | シャープ株式会社 | 固体撮像装置およびその製造方法 |
KR0147401B1 (ko) * | 1994-02-23 | 1998-08-01 | 구본준 | 고체촬상소자 및 그 제조방법 |
US5739548A (en) * | 1995-05-02 | 1998-04-14 | Matsushita Electronics Corporation | Solid state imaging device having a flattening layer and optical lenses |
US5677200A (en) * | 1995-05-12 | 1997-10-14 | Lg Semicond Co., Ltd. | Color charge-coupled device and method of manufacturing the same |
US5895943A (en) * | 1995-05-17 | 1999-04-20 | Lg Semicon Co., Ltd. | Color charge-coupled device |
US5734190A (en) * | 1996-03-11 | 1998-03-31 | Eastman Kodak Company | Imager having a plurality of cylindrical lenses |
US6211916B1 (en) * | 1996-03-11 | 2001-04-03 | Eastman Kodak Company | Solid state imager with inorganic lens array |
US5711890A (en) * | 1996-03-11 | 1998-01-27 | Eastman Kodak Company | Method for forming cylindrical lens arrays for solid state imager |
US5824236A (en) * | 1996-03-11 | 1998-10-20 | Eastman Kodak Company | Method for forming inorganic lens array for solid state imager |
KR100223853B1 (ko) * | 1996-08-26 | 1999-10-15 | 구본준 | 고체촬상소자의 구조 및 제조방법 |
JP3447510B2 (ja) * | 1997-04-09 | 2003-09-16 | Necエレクトロニクス株式会社 | 固体撮像素子、その製造方法及び固体撮像装置 |
DE19740612B4 (de) * | 1997-08-30 | 2005-10-13 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Anordnung von Bildsensorelementen |
WO1999014938A1 (de) | 1997-09-12 | 1999-03-25 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Bildsensorelement und anordnung von bildsensorelementen |
JP4232213B2 (ja) * | 1998-04-15 | 2009-03-04 | ソニー株式会社 | 固体撮像素子 |
US6665014B1 (en) * | 1998-11-25 | 2003-12-16 | Intel Corporation | Microlens and photodetector |
JP3821614B2 (ja) * | 1999-08-20 | 2006-09-13 | 独立行政法人科学技術振興機構 | 画像入力装置 |
US6582988B1 (en) | 1999-09-30 | 2003-06-24 | Taiwan Semiconductor Manufacturing Company | Method for forming micro lens structures |
US7129982B1 (en) * | 1999-12-30 | 2006-10-31 | Intel Corporation | Color image sensor with integrated binary optical elements |
DE10108303A1 (de) * | 2001-02-21 | 2002-08-22 | Deutsche Telekom Ag | Anordnung und Verfahren zum Detektieren eines optischen Signals an der Längsseite einer Glasfaser |
US20020159099A1 (en) * | 2001-04-27 | 2002-10-31 | Yin-Chun Huang | Optical scanner |
KR100467978B1 (ko) * | 2001-08-20 | 2005-01-24 | (주)시아이센서 | 3차원 시뮬레이션을 이용한 이미지 센서의 최적화 제조방법 |
US20030207212A1 (en) * | 2002-05-02 | 2003-11-06 | Law Benjamin Pain-Fong | Micro-optics device and method for fabricating |
WO2004023564A2 (en) * | 2002-09-09 | 2004-03-18 | Koninklijke Philips Electronics N.V. | Optoelectronic semiconductor device and method of manufacturing such a device |
US6979588B2 (en) * | 2003-01-29 | 2005-12-27 | Hynix Semiconductor Inc. | Method for manufacturing CMOS image sensor having microlens therein with high photosensitivity |
US20040223071A1 (en) * | 2003-05-08 | 2004-11-11 | David Wells | Multiple microlens system for image sensors or display units |
US7205526B2 (en) * | 2003-12-22 | 2007-04-17 | Micron Technology, Inc. | Methods of fabricating layered lens structures |
KR100538149B1 (ko) * | 2003-12-27 | 2005-12-21 | 동부아남반도체 주식회사 | 이미지 센서 |
KR100595898B1 (ko) * | 2003-12-31 | 2006-07-03 | 동부일렉트로닉스 주식회사 | 이미지 센서 및 그 제조방법 |
US7078260B2 (en) * | 2003-12-31 | 2006-07-18 | Dongbu Electronics Co., Ltd. | CMOS image sensors and methods for fabricating the same |
JP2005251804A (ja) * | 2004-03-01 | 2005-09-15 | Canon Inc | 撮像素子 |
KR100617065B1 (ko) * | 2004-07-15 | 2006-08-30 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서의 제조방법 |
US20060138597A1 (en) * | 2004-12-24 | 2006-06-29 | Johnson David A | Combined high reliability contact metal/ ballast resistor/ bypass capacitor structure for power transistors |
KR20060073186A (ko) * | 2004-12-24 | 2006-06-28 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 및 그 제조방법 |
KR100628235B1 (ko) * | 2004-12-30 | 2006-09-26 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 및 그 제조방법 |
JP5104306B2 (ja) * | 2005-07-08 | 2012-12-19 | 株式会社ニコン | 固体撮像素子 |
KR100610497B1 (ko) * | 2005-07-25 | 2006-08-09 | 삼성전자주식회사 | 이미지 센서 소자의 마이크로렌즈의 오염 방지 방법 및그를 이용한 이미지 센서 소자의 제조 방법 |
KR100752164B1 (ko) * | 2005-12-28 | 2007-08-24 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서의 제조방법 |
JP4212606B2 (ja) | 2006-05-12 | 2009-01-21 | シャープ株式会社 | 撮像素子の製造方法 |
KR100760922B1 (ko) * | 2006-07-31 | 2007-09-21 | 동부일렉트로닉스 주식회사 | 실리콘 산화막을 이용한 씨모스 이미지 센서의마이크로렌즈 및 그 제조방법 |
US8466000B2 (en) | 2011-04-14 | 2013-06-18 | United Microelectronics Corp. | Backside-illuminated image sensor and fabricating method thereof |
US20130010165A1 (en) | 2011-07-05 | 2013-01-10 | United Microelectronics Corp. | Optical micro structure, method for fabricating the same and applications thereof |
US9312292B2 (en) | 2011-10-26 | 2016-04-12 | United Microelectronics Corp. | Back side illumination image sensor and manufacturing method thereof |
US8318579B1 (en) | 2011-12-01 | 2012-11-27 | United Microelectronics Corp. | Method for fabricating semiconductor device |
US8815102B2 (en) | 2012-03-23 | 2014-08-26 | United Microelectronics Corporation | Method for fabricating patterned dichroic film |
US9401441B2 (en) | 2012-06-14 | 2016-07-26 | United Microelectronics Corporation | Back-illuminated image sensor with dishing depression surface |
US8779344B2 (en) | 2012-07-11 | 2014-07-15 | United Microelectronics Corp. | Image sensor including a deep trench isolation (DTI)that does not contact a connecting element physically |
US8828779B2 (en) | 2012-11-01 | 2014-09-09 | United Microelectronics Corp. | Backside illumination (BSI) CMOS image sensor process |
JP2014093482A (ja) * | 2012-11-06 | 2014-05-19 | Toshiba Corp | 固体撮像装置の製造方法および固体撮像装置 |
US8779484B2 (en) | 2012-11-29 | 2014-07-15 | United Microelectronics Corp. | Image sensor and process thereof |
USD758372S1 (en) * | 2013-03-13 | 2016-06-07 | Nagrastar Llc | Smart card interface |
USD759022S1 (en) * | 2013-03-13 | 2016-06-14 | Nagrastar Llc | Smart card interface |
US9279923B2 (en) | 2013-03-26 | 2016-03-08 | United Microelectronics Corporation | Color filter layer and method of fabricating the same |
US9537040B2 (en) | 2013-05-09 | 2017-01-03 | United Microelectronics Corp. | Complementary metal-oxide-semiconductor image sensor and manufacturing method thereof |
US9129876B2 (en) | 2013-05-28 | 2015-09-08 | United Microelectronics Corp. | Image sensor and process thereof |
US9054106B2 (en) | 2013-11-13 | 2015-06-09 | United Microelectronics Corp. | Semiconductor structure and method for manufacturing the same |
US9841319B2 (en) | 2013-11-19 | 2017-12-12 | United Microelectronics Corp. | Light detecting device |
USD864968S1 (en) * | 2015-04-30 | 2019-10-29 | Echostar Technologies L.L.C. | Smart card interface |
US11041980B2 (en) * | 2015-09-07 | 2021-06-22 | Sony Semiconductor Solutions Corporation | Solid-state imaging element, manufacturing method, and electronic device |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5990467A (ja) * | 1982-11-15 | 1984-05-24 | Mitsubishi Electric Corp | 固体撮像素子 |
JPS60233852A (ja) * | 1984-05-04 | 1985-11-20 | Victor Co Of Japan Ltd | 固体撮像装置 |
US4694185A (en) * | 1986-04-18 | 1987-09-15 | Eastman Kodak Company | Light sensing devices with lenticular pixels |
JP2776810B2 (ja) * | 1987-07-03 | 1998-07-16 | ソニー株式会社 | 固体撮像装置の製造方法 |
US4959533A (en) * | 1987-10-21 | 1990-09-25 | Semiconductor Energy Laboratory Co., Ltd. | Photosensitive semiconductor contact image sensor |
JPH01309370A (ja) * | 1988-06-07 | 1989-12-13 | Nec Corp | 固体撮像素子 |
JPH02248074A (ja) * | 1989-03-22 | 1990-10-03 | Toshiba Corp | カラー固体撮像素子 |
JPH0716017B2 (ja) * | 1989-06-28 | 1995-02-22 | シャープ株式会社 | 光半導体装置 |
JP2678074B2 (ja) * | 1989-12-19 | 1997-11-17 | 松下電子工業株式会社 | 固体撮像装置の製造方法 |
US5151790A (en) * | 1990-07-23 | 1992-09-29 | Fuji Photo Film Co., Ltd. | Image pickup device for stabilizing optical aberrations |
JPH0485960A (ja) * | 1990-07-30 | 1992-03-18 | Toshiba Corp | 固体撮像装置及びその製造方法 |
US5118924A (en) * | 1990-10-01 | 1992-06-02 | Eastman Kodak Company | Static control overlayers on opto-electronic devices |
KR920013734A (ko) * | 1990-12-31 | 1992-07-29 | 김광호 | 칼라필터의 제조방법 |
-
1991
- 1991-11-12 KR KR1019910020020A patent/KR960000223B1/ko not_active IP Right Cessation
- 1991-11-15 WO PCT/JP1991/001567 patent/WO1992009105A1/ja active IP Right Grant
- 1991-11-15 DE DE69125927T patent/DE69125927T2/de not_active Expired - Fee Related
- 1991-11-15 US US07/910,147 patent/US5321297A/en not_active Expired - Lifetime
- 1991-11-15 EP EP91919804A patent/EP0511404B1/de not_active Expired - Lifetime
- 1991-11-15 JP JP03300738A patent/JP3128297B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0511404A1 (de) | 1992-11-04 |
DE69125927T2 (de) | 1997-09-18 |
US5321297A (en) | 1994-06-14 |
EP0511404B1 (de) | 1997-05-02 |
WO1992009105A1 (en) | 1992-05-29 |
KR960000223B1 (ko) | 1996-01-03 |
EP0511404A4 (en) | 1992-11-19 |
JP3128297B2 (ja) | 2001-01-29 |
JPH0521770A (ja) | 1993-01-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) | ||
8339 | Ceased/non-payment of the annual fee |