DE69028060D1 - Elektronenstrahl-Belichtungsvorrichtung und Verfahren zur Anwendung derselben - Google Patents

Elektronenstrahl-Belichtungsvorrichtung und Verfahren zur Anwendung derselben

Info

Publication number
DE69028060D1
DE69028060D1 DE69028060T DE69028060T DE69028060D1 DE 69028060 D1 DE69028060 D1 DE 69028060D1 DE 69028060 T DE69028060 T DE 69028060T DE 69028060 T DE69028060 T DE 69028060T DE 69028060 D1 DE69028060 D1 DE 69028060D1
Authority
DE
Germany
Prior art keywords
same
electron beam
exposure device
beam exposure
electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69028060T
Other languages
English (en)
Other versions
DE69028060T2 (de
Inventor
Akio Yamada
Kiichi Sakamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE69028060D1 publication Critical patent/DE69028060D1/de
Publication of DE69028060T2 publication Critical patent/DE69028060T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/21—Means for adjusting the focus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30405—Details
    • H01J2237/30411—Details using digital signal processors [DSP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31776—Shaped beam

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)
DE69028060T 1989-09-30 1990-09-28 Elektronenstrahl-Belichtungsvorrichtung und Verfahren zur Anwendung derselben Expired - Fee Related DE69028060T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1253763A JPH03119717A (ja) 1989-09-30 1989-09-30 荷電粒子露光装置および露光方法

Publications (2)

Publication Number Publication Date
DE69028060D1 true DE69028060D1 (de) 1996-09-19
DE69028060T2 DE69028060T2 (de) 1997-01-16

Family

ID=17255803

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69028060T Expired - Fee Related DE69028060T2 (de) 1989-09-30 1990-09-28 Elektronenstrahl-Belichtungsvorrichtung und Verfahren zur Anwendung derselben

Country Status (5)

Country Link
US (1) US5148033A (de)
EP (1) EP0421695B1 (de)
JP (1) JPH03119717A (de)
KR (1) KR940010149B1 (de)
DE (1) DE69028060T2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2663063B2 (ja) * 1991-06-12 1997-10-15 富士通株式会社 荷電ビーム露光方法
JP2591548B2 (ja) * 1991-07-26 1997-03-19 富士通株式会社 荷電粒子線露光装置及び荷電粒子線露光方法
US5285074A (en) * 1992-06-03 1994-02-08 International Business Machines Corporation Dynamic compensation of non-linear electron beam landing angle in variable axis lenses
JP3272820B2 (ja) * 1993-06-24 2002-04-08 富士通株式会社 電子ビーム露光装置及び方法
US5849437A (en) * 1994-03-25 1998-12-15 Fujitsu Limited Electron beam exposure mask and method of manufacturing the same and electron beam exposure method
JPH09260243A (ja) * 1996-03-19 1997-10-03 Fujitsu Ltd 荷電粒子ビーム露光方法及び装置
KR19980079377A (ko) * 1997-03-25 1998-11-25 요시다쇼이치로 하전립자선 전사장치
JP3508622B2 (ja) * 1999-05-20 2004-03-22 株式会社日立製作所 電子ビーム描画装置および電子ビームを用いた描画方法
GB2369241A (en) * 1999-06-03 2002-05-22 Advantest Corp Charged particle beam exposure device with aberration correction
JP2001052998A (ja) * 1999-06-03 2001-02-23 Advantest Corp 荷電粒子ビーム結像方法、荷電粒子ビーム結像装置及び荷電粒子ビーム露光装置
JP2001126978A (ja) 1999-10-29 2001-05-11 Advantest Corp 電子ビーム露光装置、その調整方法、及び調整に使用するブロックマスク
US6908836B2 (en) * 2002-09-23 2005-06-21 Applied Materials, Inc. Method of implanting a substrate and an ion implanter for performing the method
JP2004039453A (ja) * 2002-07-03 2004-02-05 Seiko Instruments Inc 微細ステンシル構造修正装置
US7049210B2 (en) * 2002-09-23 2006-05-23 Applied Materials, Inc. Method of implanting a substrate and an ion implanter for performing the method
US7282427B1 (en) 2006-05-04 2007-10-16 Applied Materials, Inc. Method of implanting a substrate and an ion implanter for performing the method
JP4889431B2 (ja) * 2006-10-05 2012-03-07 株式会社アドバンテスト 電子ビーム露光装置及び電子ビーム露光方法
JP6262007B2 (ja) * 2014-02-13 2018-01-17 株式会社ニューフレアテクノロジー セトリング時間の取得方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52119185A (en) * 1976-03-31 1977-10-06 Fujitsu Ltd Electron beam exposure equipment
JPS5469075A (en) * 1977-11-14 1979-06-02 Hitachi Ltd Electron beam drawing device
JPS5546553A (en) * 1978-09-28 1980-04-01 Chiyou Lsi Gijutsu Kenkyu Kumiai Method of projecting electron beam
US4213053A (en) * 1978-11-13 1980-07-15 International Business Machines Corporation Electron beam system with character projection capability
JPS5694740A (en) * 1979-12-28 1981-07-31 Fujitsu Ltd Electronic beam exposure device
JPS57208140A (en) * 1981-06-18 1982-12-21 Fujitsu Ltd Method of adjusting electron beam exposure apparatus
JPS58121625A (ja) * 1981-12-28 1983-07-20 Fujitsu Ltd 電子ビ−ム露光装置
JPS58218117A (ja) * 1982-06-11 1983-12-19 Fujitsu Ltd 電子ビ−ム制御装置
JPS62114221A (ja) * 1985-11-14 1987-05-26 Toshiba Corp 荷電ビ−ム描画方法
JPS62206828A (ja) * 1986-03-06 1987-09-11 Nec Corp 荷電粒子線描画装置
JPS62273717A (ja) * 1986-05-21 1987-11-27 Toshiba Corp 自動焦点合わせ方法

Also Published As

Publication number Publication date
US5148033A (en) 1992-09-15
EP0421695A3 (en) 1991-09-04
KR910007101A (ko) 1991-04-30
DE69028060T2 (de) 1997-01-16
EP0421695A2 (de) 1991-04-10
KR940010149B1 (ko) 1994-10-22
EP0421695B1 (de) 1996-08-14
JPH03119717A (ja) 1991-05-22

Similar Documents

Publication Publication Date Title
DE69026353D1 (de) Feldemissionsvorrichtung und Verfahren zur Herstellung derselben
DE69132120D1 (de) Verfahren und Vorrichtung zur Projektionsbelichtung
DE69132110D1 (de) Verfahren und vorrichtung zur belichtung
DE69028060D1 (de) Elektronenstrahl-Belichtungsvorrichtung und Verfahren zur Anwendung derselben
DE69422739D1 (de) Verfahren und Vorrichtung zur Belichtung
DE69232145D1 (de) Vorrichtung und Verfahren zur Belichtung
DE69433142D1 (de) Vorrichtung und Verfahren zur Projektionsbelichtung
DE69033199D1 (de) Mittel zur feuchthaltung von gewebe und verfahren
DE69029982D1 (de) Verfahren und Geräte zur dreidimensionalen Bilderzeugung
DE69214229D1 (de) Verfahren und Vorrichtung zur Kontrastverbesserung von Bildern
DE69033579D1 (de) Bildverkleinerungsgerät und Verfahren
DE69414913D1 (de) Verfahren und Vorrichtung zur Gewinnung von Bildern der Hornhaut
DE69017827D1 (de) Verfahren und Geräte zur Bilderzeugung.
DE69029300D1 (de) Verfahren und Vorrichtung zur Röntgenbelichtung
DE69130142D1 (de) Verfahren und Gerät zur Herstellungsplanung
DE69226511D1 (de) Verfahren und Vorrichtung zur Belichtung von Substraten
DE69532394D1 (de) Verfahren und Vorrichtung zur Echokompensation mit Anwendung der "fast projection scheme"
DE69415739D1 (de) Verahren und vorrichtung zur schrittweisen bewegung von gegenstaenden
FI894736A0 (fi) Biologisesti hajoava kalvo ja menetelmä sellaisen valmistamiseksi
DE69122728D1 (de) Verfahren und Gerät zur Ionenimplantierung
DE68915007D1 (de) Verfahren und Gerät zur Elektronenstrahlbelichtung.
DE68929356D1 (de) Verfahren und Vorrichtung zur Belichtung
DE69024100D1 (de) Verfahren und Vorrichtung zur Aufrechterhaltung der gewünschten Belichtungswerte
DE69327639D1 (de) Vorrichtung und Verfahren zur dynamischen Konfiguration von Synthesizern
DE69115150D1 (de) Verfahren und Gerät zur Bestrahlung mittels niederenergetischer Elektronen.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee