DE69115150D1 - Verfahren und Gerät zur Bestrahlung mittels niederenergetischer Elektronen. - Google Patents

Verfahren und Gerät zur Bestrahlung mittels niederenergetischer Elektronen.

Info

Publication number
DE69115150D1
DE69115150D1 DE69115150T DE69115150T DE69115150D1 DE 69115150 D1 DE69115150 D1 DE 69115150D1 DE 69115150 T DE69115150 T DE 69115150T DE 69115150 T DE69115150 T DE 69115150T DE 69115150 D1 DE69115150 D1 DE 69115150D1
Authority
DE
Germany
Prior art keywords
irradiation
low
energy electrons
electrons
energy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69115150T
Other languages
English (en)
Other versions
DE69115150T2 (de
Inventor
Yuichiro Yamazaki
Motosuke Miyoshi
Katsuya Okumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE69115150D1 publication Critical patent/DE69115150D1/de
Application granted granted Critical
Publication of DE69115150T2 publication Critical patent/DE69115150T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H01J37/073—Electron guns using field emission, photo emission, or secondary emission electron sources

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
DE69115150T 1990-07-26 1991-07-26 Verfahren und Gerät zur Bestrahlung mittels niederenergetischer Elektronen. Expired - Lifetime DE69115150T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP19856490 1990-07-26
JP3183091A JPH07120516B2 (ja) 1990-07-26 1991-06-27 低エネルギ−電子の照射方法および照射装置

Publications (2)

Publication Number Publication Date
DE69115150D1 true DE69115150D1 (de) 1996-01-18
DE69115150T2 DE69115150T2 (de) 1996-05-15

Family

ID=26501651

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69115150T Expired - Lifetime DE69115150T2 (de) 1990-07-26 1991-07-26 Verfahren und Gerät zur Bestrahlung mittels niederenergetischer Elektronen.

Country Status (5)

Country Link
US (1) US5138169A (de)
EP (1) EP0468521B1 (de)
JP (1) JPH07120516B2 (de)
KR (1) KR940010199B1 (de)
DE (1) DE69115150T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05135731A (ja) * 1991-07-08 1993-06-01 Sony Corp イオン注入装置
US5882538A (en) * 1995-08-28 1999-03-16 Georgia Tech Research Corporation Method and apparatus for low energy electron enhanced etching of substrates
US6027663A (en) * 1995-08-28 2000-02-22 Georgia Tech Research Corporation Method and apparatus for low energy electron enhanced etching of substrates
US6258287B1 (en) 1996-08-28 2001-07-10 Georgia Tech Research Corporation Method and apparatus for low energy electron enhanced etching of substrates in an AC or DC plasma environment
US6033587A (en) * 1996-09-20 2000-03-07 Georgia Tech Research Corporation Method and apparatus for low energy electron enhanced etching and cleaning of substrates in the positive column of a plasma
GB2326971B (en) 1997-07-03 2001-12-12 Applied Materials Inc Electron flood apparatus for neutralising charge build up on a substrate during ion implantation
US5909031A (en) * 1997-09-08 1999-06-01 Eaton Corporation Ion implanter electron shower having enhanced secondary electron emission
JP3576783B2 (ja) * 1997-12-26 2004-10-13 Ｔｄｋ株式会社 薄膜磁気ヘッドの製造方法
DE10254416A1 (de) * 2002-11-21 2004-06-09 Infineon Technologies Ag Vorrichtung zum Erzeugen von Sekundärelektronen, insbesondere Sekundärelektrode und Beschleunigungselektrode
JP2004304162A (ja) 2003-03-17 2004-10-28 Seiko Epson Corp コンタクトホール形成方法、薄膜半導体装置の製造方法、電子デバイスの製造方法、電子デバイス
KR101384260B1 (ko) * 2005-12-05 2014-04-11 전자빔기술센터 주식회사 전자칼럼의 전자빔 포커싱 방법
US8568605B2 (en) * 2010-11-18 2013-10-29 California Institute Of Technology Forming nanometer-sized patterns by electron microscopy
US10262845B2 (en) 2015-02-10 2019-04-16 Hamilton Sundstrand Corporation System and method for enhanced ion pump lifespan
US10665437B2 (en) * 2015-02-10 2020-05-26 Hamilton Sundstrand Corporation System and method for enhanced ion pump lifespan
JP7002921B2 (ja) * 2017-11-10 2022-01-20 東京エレクトロン株式会社 基板処理方法及び基板処理装置
US10770262B1 (en) * 2018-05-30 2020-09-08 National Technology & Engineering Solutions Of Sandia, Llc Apparatus, method and system for imaging and utilization of SEM charged particles

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3660655A (en) * 1969-09-08 1972-05-02 Ass Elect Ind Ion probe with means for mass analyzing neutral particles sputtered from a specimen
NL7317436A (nl) * 1973-12-20 1975-06-24 Philips Nv Inrichting voor massa-analyse en structuur-analyse van een oppervlaklaag door middel van ionenver- strooiing.
US4090076A (en) * 1976-07-16 1978-05-16 International Business Machines Corporation High resolution electron energy device and method
US4146787A (en) * 1977-02-17 1979-03-27 Extranuclear Laboratories, Inc. Methods and apparatus for energy analysis and energy filtering of secondary ions and electrons
US4596929A (en) * 1983-11-21 1986-06-24 Nanometrics Incorporated Three-stage secondary emission electron detection in electron microscopes
JPS60117532A (ja) * 1983-11-29 1985-06-25 Shimadzu Corp イオン照射装置
US4800281A (en) * 1984-09-24 1989-01-24 Hughes Aircraft Company Compact penning-discharge plasma source
JPS61193351A (ja) * 1985-02-22 1986-08-27 Hitachi Ltd 帯電防止制御装置
JP2564115B2 (ja) * 1985-12-25 1996-12-18 住友イートンノバ 株式会社 ウエハ−の帯電抑制装置
NL8602177A (nl) * 1986-08-27 1988-03-16 Philips Nv Electronen detectie met energie discriminatie.
JPS63110529A (ja) * 1986-10-29 1988-05-16 Hitachi Ltd イオンビ−ム発生装置および方法
JPS6410563A (en) * 1987-07-02 1989-01-13 Sumitomo Eaton Nova Electric charging suppressor of ion implanter
JPH01220350A (ja) * 1988-02-26 1989-09-04 Hitachi Ltd 帯電抑制方法及びその装置を用いた粒子線照射装置
US4902647A (en) * 1988-10-21 1990-02-20 The United States Of American As Represented By The Administrator Of The National Aeronautics And Space Administration Surface modification using low energy ground state ion beams
DE69012414T2 (de) * 1989-05-09 1995-02-16 Sumitomo Eaton Nova Ionen-Implantationsgerät, in dem das elektrische Aufladen von Substraten vermieden wird.

Also Published As

Publication number Publication date
US5138169A (en) 1992-08-11
KR940010199B1 (ko) 1994-10-22
EP0468521A3 (en) 1992-05-27
EP0468521A2 (de) 1992-01-29
JPH04357656A (ja) 1992-12-10
KR920003415A (ko) 1992-02-29
DE69115150T2 (de) 1996-05-15
EP0468521B1 (de) 1995-12-06
JPH07120516B2 (ja) 1995-12-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)