DE69025027D1 - Halbleiterspeicheranordnung - Google Patents
HalbleiterspeicheranordnungInfo
- Publication number
- DE69025027D1 DE69025027D1 DE69025027T DE69025027T DE69025027D1 DE 69025027 D1 DE69025027 D1 DE 69025027D1 DE 69025027 T DE69025027 T DE 69025027T DE 69025027 T DE69025027 T DE 69025027T DE 69025027 D1 DE69025027 D1 DE 69025027D1
- Authority
- DE
- Germany
- Prior art keywords
- memory device
- semiconductor memory
- semiconductor
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
- G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
- G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/067—Single-ended amplifiers
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28127589 | 1989-10-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69025027D1 true DE69025027D1 (de) | 1996-03-07 |
DE69025027T2 DE69025027T2 (de) | 1996-09-05 |
Family
ID=17636802
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69025027T Expired - Fee Related DE69025027T2 (de) | 1989-10-27 | 1990-10-26 | Halbleiterspeicheranordnung |
Country Status (4)
Country | Link |
---|---|
US (1) | US5331588A (de) |
EP (1) | EP0424962B1 (de) |
JP (1) | JP2591314B2 (de) |
DE (1) | DE69025027T2 (de) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2809526B1 (fr) * | 2000-05-24 | 2003-07-25 | St Microelectronics Sa | Memoire rom de taille reduite |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4156938A (en) * | 1975-12-29 | 1979-05-29 | Mostek Corporation | MOSFET Memory chip with single decoder and bi-level interconnect lines |
JPH0766659B2 (ja) * | 1986-01-30 | 1995-07-19 | 三菱電機株式会社 | 半導体記憶装置 |
JPH01151095A (ja) * | 1987-12-09 | 1989-06-13 | Toshiba Corp | 半導体メモリ |
-
1990
- 1990-10-17 JP JP27827690A patent/JP2591314B2/ja not_active Expired - Lifetime
- 1990-10-26 DE DE69025027T patent/DE69025027T2/de not_active Expired - Fee Related
- 1990-10-26 EP EP90120593A patent/EP0424962B1/de not_active Expired - Lifetime
- 1990-10-29 US US07/604,280 patent/US5331588A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0424962A3 (en) | 1991-11-06 |
EP0424962B1 (de) | 1996-01-24 |
JPH03200365A (ja) | 1991-09-02 |
JP2591314B2 (ja) | 1997-03-19 |
DE69025027T2 (de) | 1996-09-05 |
US5331588A (en) | 1994-07-19 |
EP0424962A2 (de) | 1991-05-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69024851D1 (de) | Halbleiterspeicheranordnung | |
DE69027065D1 (de) | Halbleiterspeicheranordnung | |
DE68926811D1 (de) | Halbleiterspeicheranordnung | |
DE69132284D1 (de) | Halbleiterspeicheranordnung | |
KR900012278A (ko) | 반도체 기억장치 | |
DE69123666D1 (de) | Halbleiterspeicheranordnung | |
KR900015160A (ko) | 반도체 기억장치 | |
DE69125206D1 (de) | Halbleiterspeicheranordnung | |
DE69022537D1 (de) | Halbleiterspeicheranordnung. | |
DE69121801D1 (de) | Halbleiterspeicheranordnung | |
DE69123379D1 (de) | Halbleiterspeichervorrichtung | |
DE69027953D1 (de) | Halbleiterspeichervorrichtung | |
DE68926124D1 (de) | Halbleiterspeicheranordnung | |
DE69030914D1 (de) | Halbleiterspeicheranordnung | |
DE69017518D1 (de) | Halbleiterspeicheranordnung. | |
DE69031847D1 (de) | Halbleiterspeicherbauteil | |
KR900012280A (ko) | 반도체기억장치 | |
DE69024112D1 (de) | Halbleiterspeicheranordnung | |
DE69125339D1 (de) | Halbleiterspeicheranordnung | |
DE69024167D1 (de) | Halbleiterspeicheranordnung | |
DE69027085D1 (de) | Halbleiterspeicheranordnung | |
KR900012282A (ko) | 반도체기억장치 | |
DE69027895D1 (de) | Halbleiterspeicher | |
DE69124286D1 (de) | Halbleiterspeicheranordnung | |
KR900008675A (ko) | 반도체기억장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |