DE69024719D1 - Gasverteilungssystem und Verfahren zur Benutzung dieses Systems - Google Patents
Gasverteilungssystem und Verfahren zur Benutzung dieses SystemsInfo
- Publication number
- DE69024719D1 DE69024719D1 DE69024719T DE69024719T DE69024719D1 DE 69024719 D1 DE69024719 D1 DE 69024719D1 DE 69024719 T DE69024719 T DE 69024719T DE 69024719 T DE69024719 T DE 69024719T DE 69024719 D1 DE69024719 D1 DE 69024719D1
- Authority
- DE
- Germany
- Prior art keywords
- gas distribution
- distribution system
- gas
- distribution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US39315389A | 1989-08-14 | 1989-08-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69024719D1 true DE69024719D1 (de) | 1996-02-22 |
DE69024719T2 DE69024719T2 (de) | 1996-10-02 |
Family
ID=23553500
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69024719T Expired - Fee Related DE69024719T2 (de) | 1989-08-14 | 1990-08-07 | Gasverteilungssystem und Verfahren zur Benutzung dieses Systems |
Country Status (5)
Country | Link |
---|---|
US (1) | US5451290A (de) |
EP (1) | EP0413239B1 (de) |
JP (1) | JPH03175627A (de) |
KR (1) | KR0160288B1 (de) |
DE (1) | DE69024719T2 (de) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5021121A (en) * | 1990-02-16 | 1991-06-04 | Applied Materials, Inc. | Process for RIE etching silicon dioxide |
US5880036A (en) | 1992-06-15 | 1999-03-09 | Micron Technology, Inc. | Method for enhancing oxide to nitride selectivity through the use of independent heat control |
TW347460B (en) * | 1995-11-29 | 1998-12-11 | Applied Materials Inc | Flat bottom components and flat bottom architecture for fluid and gas systems |
US6007673A (en) * | 1996-10-02 | 1999-12-28 | Matsushita Electronics Corporation | Apparatus and method of producing an electronic device |
JP4147608B2 (ja) * | 1998-03-06 | 2008-09-10 | 東京エレクトロン株式会社 | 熱処理装置 |
JP2001102309A (ja) * | 1998-04-09 | 2001-04-13 | Tokyo Electron Ltd | ガス処理装置 |
US6335292B1 (en) * | 1999-04-15 | 2002-01-01 | Micron Technology, Inc. | Method of controlling striations and CD loss in contact oxide etch |
TW477009B (en) * | 1999-05-26 | 2002-02-21 | Tadahiro Ohmi | Plasma process device |
KR100500246B1 (ko) | 2003-04-09 | 2005-07-11 | 삼성전자주식회사 | 가스공급장치 |
US7097714B2 (en) * | 2003-09-17 | 2006-08-29 | Intersil Americas Inc. | Particulate removal from an electrostatic chuck |
US6983892B2 (en) * | 2004-02-05 | 2006-01-10 | Applied Materials, Inc. | Gas distribution showerhead for semiconductor processing |
KR20050089516A (ko) * | 2004-03-05 | 2005-09-08 | 학교법인 성균관대학 | 전자석이 구비된 반도체 식각용 중성빔 소오스 |
EP1970468B1 (de) * | 2007-03-05 | 2009-07-15 | Applied Materials, Inc. | Beschichtungsanlage und Gasleitungssystem |
US20080216958A1 (en) * | 2007-03-07 | 2008-09-11 | Novellus Systems, Inc. | Plasma Reaction Apparatus Having Pre-Seasoned Showerheads and Methods for Manufacturing the Same |
JP6043046B2 (ja) * | 2010-08-12 | 2016-12-14 | 東京エレクトロン株式会社 | エッチングガスの供給方法及びエッチング装置 |
US9111728B2 (en) | 2011-04-11 | 2015-08-18 | Lam Research Corporation | E-beam enhanced decoupled source for semiconductor processing |
US8900403B2 (en) | 2011-05-10 | 2014-12-02 | Lam Research Corporation | Semiconductor processing system having multiple decoupled plasma sources |
US9177756B2 (en) * | 2011-04-11 | 2015-11-03 | Lam Research Corporation | E-beam enhanced decoupled source for semiconductor processing |
US9109754B2 (en) | 2011-10-19 | 2015-08-18 | Applied Materials, Inc. | Apparatus and method for providing uniform flow of gas |
US8955547B2 (en) | 2011-10-19 | 2015-02-17 | Applied Materials, Inc. | Apparatus and method for providing uniform flow of gas |
KR101253462B1 (ko) | 2012-10-22 | 2013-04-10 | 재 욱 한 | 진열대용 수직프레임 및 이를 이용한 다용도 조립식 진열대 |
US9353440B2 (en) | 2013-12-20 | 2016-05-31 | Applied Materials, Inc. | Dual-direction chemical delivery system for ALD/CVD chambers |
JP2017152531A (ja) * | 2016-02-24 | 2017-08-31 | 東京エレクトロン株式会社 | 基板処理方法 |
TW202020218A (zh) | 2018-09-14 | 2020-06-01 | 美商應用材料股份有限公司 | 用於多流前驅物配分劑量的裝置 |
TW202115815A (zh) * | 2019-10-04 | 2021-04-16 | 美商應用材料股份有限公司 | 用於易碎板以防止破裂的氣體分配組件安裝 |
CN115287630B (zh) * | 2022-08-04 | 2024-03-26 | 长鑫存储技术有限公司 | 一种半导体器件制备装置及制备方法 |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2376904A1 (fr) * | 1977-01-11 | 1978-08-04 | Alsthom Atlantique | Procede d'attaque d'une couche mince par decomposition d'un gaz dans un plasma |
US4209357A (en) * | 1979-05-18 | 1980-06-24 | Tegal Corporation | Plasma reactor apparatus |
US4339297A (en) * | 1981-04-14 | 1982-07-13 | Seiichiro Aigo | Apparatus for etching of oxide film on semiconductor wafer |
US4436534A (en) * | 1982-11-08 | 1984-03-13 | Seguy Bernard R | Method for reducing desorbent consumption in recovery systems |
JPS59114825A (ja) * | 1982-12-22 | 1984-07-03 | Fujitsu Ltd | プラズマエツチング方法及び装置 |
US4595434A (en) * | 1983-09-15 | 1986-06-17 | American Can Company | Collapsible dispensing tube with an orifice sealed with multi-layer sealant sheet material |
JPS61163640A (ja) * | 1985-01-14 | 1986-07-24 | Hitachi Ltd | ドライエツチング装置 |
JPS61208222A (ja) * | 1985-03-13 | 1986-09-16 | Hitachi Ltd | プラズマ処理方法及び装置 |
US4617079A (en) * | 1985-04-12 | 1986-10-14 | The Perkin Elmer Corporation | Plasma etching system |
US4612077A (en) * | 1985-07-29 | 1986-09-16 | The Perkin-Elmer Corporation | Electrode for plasma etching system |
JPS62210623A (ja) * | 1986-03-11 | 1987-09-16 | Hitachi Electronics Eng Co Ltd | 気相反応装置用電極 |
JPH0680642B2 (ja) * | 1986-05-30 | 1994-10-12 | 東京エレクトロン山梨株式会社 | 放電加工用電極 |
JP2544121B2 (ja) * | 1986-11-25 | 1996-10-16 | 東京エレクトロン 株式会社 | アッシング装置 |
JPS63142634A (ja) * | 1986-12-05 | 1988-06-15 | Oki Electric Ind Co Ltd | 半導体製造装置 |
US4960488A (en) * | 1986-12-19 | 1990-10-02 | Applied Materials, Inc. | Reactor chamber self-cleaning process |
JPS63303061A (ja) * | 1987-06-02 | 1988-12-09 | Anelva Corp | 真空装置 |
US4838990A (en) * | 1987-07-16 | 1989-06-13 | Texas Instruments Incorporated | Method for plasma etching tungsten |
US5006520A (en) * | 1987-10-13 | 1991-04-09 | Yoshitomi Pharmaceutical Industries, Ltd. | Fused pyrazole compounds and pharmaceutical use thereof |
JPH01149964A (ja) * | 1987-12-04 | 1989-06-13 | Furukawa Electric Co Ltd:The | プラズマcvd装置用シャワー電極 |
US4820371A (en) * | 1987-12-15 | 1989-04-11 | Texas Instruments Incorporated | Apertured ring for exhausting plasma reactor gases |
KR970003885B1 (ko) * | 1987-12-25 | 1997-03-22 | 도오교오 에레구토론 가부시끼 가이샤 | 에칭 방법 및 그 장치 |
JP2768685B2 (ja) * | 1988-03-28 | 1998-06-25 | 株式会社東芝 | 半導体装置の製造方法及びその装置 |
US4859304A (en) * | 1988-07-18 | 1989-08-22 | Micron Technology, Inc. | Temperature controlled anode for plasma dry etchers for etching semiconductor |
JPH02101740A (ja) * | 1988-10-11 | 1990-04-13 | Anelva Corp | プラズマエッチング装置 |
US4949068A (en) * | 1988-11-28 | 1990-08-14 | John Johnston | Motorcycle sound simulator for a child's toy |
DE3914065A1 (de) * | 1989-04-28 | 1990-10-31 | Leybold Ag | Vorrichtung zur durchfuehrung von plasma-aetzverfahren |
JPH035767A (ja) * | 1989-06-02 | 1991-01-11 | Ricoh Co Ltd | 画像形成装置 |
-
1990
- 1990-08-07 EP EP90115151A patent/EP0413239B1/de not_active Expired - Lifetime
- 1990-08-07 DE DE69024719T patent/DE69024719T2/de not_active Expired - Fee Related
- 1990-08-14 JP JP2214884A patent/JPH03175627A/ja active Pending
- 1990-08-14 KR KR1019900012503A patent/KR0160288B1/ko not_active IP Right Cessation
-
1993
- 1993-02-11 US US08/017,360 patent/US5451290A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0413239A2 (de) | 1991-02-20 |
EP0413239A3 (en) | 1991-12-11 |
US5451290A (en) | 1995-09-19 |
KR0160288B1 (ko) | 1999-02-01 |
JPH03175627A (ja) | 1991-07-30 |
EP0413239B1 (de) | 1996-01-10 |
KR910005408A (ko) | 1991-03-30 |
DE69024719T2 (de) | 1996-10-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |