DE69024705D1 - Verfahren zur Ablagerung von Diamant und Vorrichtung aus Diamant zur Lichtemission - Google Patents

Verfahren zur Ablagerung von Diamant und Vorrichtung aus Diamant zur Lichtemission

Info

Publication number
DE69024705D1
DE69024705D1 DE69024705T DE69024705T DE69024705D1 DE 69024705 D1 DE69024705 D1 DE 69024705D1 DE 69024705 T DE69024705 T DE 69024705T DE 69024705 T DE69024705 T DE 69024705T DE 69024705 D1 DE69024705 D1 DE 69024705D1
Authority
DE
Germany
Prior art keywords
diamond
light emission
deposition process
diamond deposition
diamond device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69024705T
Other languages
English (en)
Other versions
DE69024705T2 (de
Inventor
Masaya Kadono
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP14355589A external-priority patent/JP2761756B2/ja
Priority claimed from JP14355489A external-priority patent/JP2761755B2/ja
Priority claimed from JP14917789A external-priority patent/JP2761758B2/ja
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Application granted granted Critical
Publication of DE69024705D1 publication Critical patent/DE69024705D1/de
Publication of DE69024705T2 publication Critical patent/DE69024705T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/274—Diamond only using microwave discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/278—Diamond only doping or introduction of a secondary phase in the diamond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0054—Processes for devices with an active region comprising only group IV elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
    • H01L33/343—Materials of the light emitting region containing only elements of Group IV of the Periodic Table characterised by the doping materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69024705T 1989-06-05 1990-05-31 Verfahren zur Ablagerung von Diamant und Vorrichtung aus Diamant zur Lichtemission Expired - Fee Related DE69024705T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP14355589A JP2761756B2 (ja) 1989-06-05 1989-06-05 ダイヤモンドの作製方法
JP14355489A JP2761755B2 (ja) 1989-06-05 1989-06-05 ダイヤモンドの作製方法
JP14917789A JP2761758B2 (ja) 1989-06-12 1989-06-12 ダイヤモンドの作製方法

Publications (2)

Publication Number Publication Date
DE69024705D1 true DE69024705D1 (de) 1996-02-22
DE69024705T2 DE69024705T2 (de) 1996-09-19

Family

ID=27318666

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69024705T Expired - Fee Related DE69024705T2 (de) 1989-06-05 1990-05-31 Verfahren zur Ablagerung von Diamant und Vorrichtung aus Diamant zur Lichtemission

Country Status (3)

Country Link
US (2) US5106452A (de)
EP (1) EP0402039B1 (de)
DE (1) DE69024705T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5413772A (en) * 1987-03-30 1995-05-09 Crystallume Diamond film and solid particle composite structure and methods for fabricating same
US5273731A (en) * 1989-09-14 1993-12-28 General Electric Company Substantially transparent free standing diamond films
JPH059735A (ja) * 1991-07-09 1993-01-19 Kobe Steel Ltd ダイヤモンドの気相合成方法
US5527747A (en) * 1991-10-04 1996-06-18 Georgia Tech Research Corporation Rapid process for the preparation of diamond articles
CA2122995A1 (en) * 1991-11-05 1993-05-13 Ronald A. Rudder Chemical vapor deposition of diamond films using water-based plasma discharges
JP3166919B2 (ja) * 1993-10-29 2001-05-14 ウンアクシス バルツェルス アクチェンゲゼルシャフト 被覆体とこの被覆体を製造する方法およびその使用
US5425965A (en) * 1993-12-27 1995-06-20 Ford Motor Company Process for deposition of ultra-fine grained polycrystalline diamond films
US5554415A (en) * 1994-01-18 1996-09-10 Qqc, Inc. Substrate coating techniques, including fabricating materials on a surface of a substrate
US5731046A (en) * 1994-01-18 1998-03-24 Qqc, Inc. Fabrication of diamond and diamond-like carbon coatings
US5620754A (en) * 1994-01-21 1997-04-15 Qqc, Inc. Method of treating and coating substrates
FR2727433B1 (fr) * 1994-11-30 1997-01-03 Kodak Pathe Procede pour la fabrication de couches de diamant dope au bore
US5759623A (en) * 1995-09-14 1998-06-02 Universite De Montreal Method for producing a high adhesion thin film of diamond on a Fe-based substrate
DE19718618C2 (de) * 1997-05-02 1999-12-02 Daimler Chrysler Ag Komposit-Struktur mit einem mehrere mikroelektronische Bauteile und eine Diamantschicht aufweisenden Wachstums-Substrat sowie Verfahren zur Herstellung der Komposit-Struktur
EP1220331A1 (de) * 1999-07-07 2002-07-03 Tokyo Gas Co., Ltd. Ultraviolette leuchtdiode auf diamantbasis
EP1895579B1 (de) 2005-06-20 2016-06-15 Nippon Telegraph And Telephone Corporation Diamanthalbleiterbauelement und herstellungsverfahren dafür
TW200826323A (en) * 2006-12-15 2008-06-16 Kinik Co LED and manufacture method thereof
KR101420773B1 (ko) 2009-07-15 2014-07-17 주성엔지니어링(주) 전기광학소자 및 이의 제작 방법
CN112981362B (zh) * 2021-02-08 2023-11-28 上海电气集团股份有限公司 一种金刚石涂层材料及其制备方法和应用

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3607061A (en) * 1968-06-26 1971-09-21 Univ Case Western Reserve Manufacture of synthetic diamonds
US3961103A (en) * 1972-07-12 1976-06-01 Space Sciences, Inc. Film deposition
US4188244A (en) * 1975-04-10 1980-02-12 Matsushita Electric Industrial Co., Ltd. Method of making a semiconductor light-emitting device utilizing low-temperature vapor-phase deposition
DD133688A1 (de) * 1977-08-04 1979-01-17 Klaus Bewilogua Verfahren zur herstellung diamanthaltiger schichten hoher haftfestigkeit
US4571447A (en) * 1983-06-24 1986-02-18 Prins Johan F Photovoltaic cell of semi-conducting diamond
US4816286A (en) * 1985-11-25 1989-03-28 Showa Denko Kabushiki Kaisha Process for synthesis of diamond by CVD
ZA877921B (en) * 1986-12-22 1988-04-21 General Electric Company Condensate diamond
EP0275063A3 (de) * 1987-01-12 1992-05-27 Sumitomo Electric Industries Limited Diamanthaltiges lichtausstrahlendes Element und Verfahren zu seiner Herstellung
KR900008505B1 (ko) * 1987-02-24 1990-11-24 세미콘덕터 에너지 라보라터리 캄파니 리미티드 탄소 석출을 위한 마이크로파 강화 cvd 방법
JPS63210099A (ja) * 1987-02-26 1988-08-31 Nissin Electric Co Ltd ダイヤモンド膜の作製方法
EP0288065B1 (de) * 1987-04-22 1993-10-06 Idemitsu Petrochemical Co. Ltd. Verfahren zur Diamantsynthese
US4830702A (en) * 1987-07-02 1989-05-16 General Electric Company Hollow cathode plasma assisted apparatus and method of diamond synthesis
JPH0623430B2 (ja) * 1987-07-13 1994-03-30 株式会社半導体エネルギ−研究所 炭素作製方法
JPS6461396A (en) * 1987-09-01 1989-03-08 Idemitsu Petrochemical Co Synthesis of diamond and installation therefor
US5002899A (en) * 1988-09-30 1991-03-26 Massachusetts Institute Of Technology Electrical contacts on diamond
US5006914A (en) * 1988-12-02 1991-04-09 Advanced Technology Materials, Inc. Single crystal semiconductor substrate articles and semiconductor devices comprising same
US5051785A (en) * 1989-06-22 1991-09-24 Advanced Technology Materials, Inc. N-type semiconducting diamond, and method of making the same
JP2730271B2 (ja) * 1990-03-07 1998-03-25 住友電気工業株式会社 半導体装置

Also Published As

Publication number Publication date
US5106452A (en) 1992-04-21
EP0402039B1 (de) 1996-01-10
EP0402039A1 (de) 1990-12-12
DE69024705T2 (de) 1996-09-19
US5500539A (en) 1996-03-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee