DE69020962D1 - Einkristallziehvorrichtung und Verfahren. - Google Patents

Einkristallziehvorrichtung und Verfahren.

Info

Publication number
DE69020962D1
DE69020962D1 DE69020962T DE69020962T DE69020962D1 DE 69020962 D1 DE69020962 D1 DE 69020962D1 DE 69020962 T DE69020962 T DE 69020962T DE 69020962 T DE69020962 T DE 69020962T DE 69020962 D1 DE69020962 D1 DE 69020962D1
Authority
DE
Germany
Prior art keywords
single crystal
crystal puller
puller
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69020962T
Other languages
English (en)
Other versions
DE69020962T2 (de
Inventor
Nobuo Katsuoka
Koji Mizuishi
Shinichi Furuse
Shigemaru Maeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE69020962D1 publication Critical patent/DE69020962D1/de
Publication of DE69020962T2 publication Critical patent/DE69020962T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69020962T 1989-05-30 1990-05-30 Einkristallziehvorrichtung und Verfahren. Expired - Lifetime DE69020962T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1134778A JP2678383B2 (ja) 1989-05-30 1989-05-30 単結晶上装置

Publications (2)

Publication Number Publication Date
DE69020962D1 true DE69020962D1 (de) 1995-08-24
DE69020962T2 DE69020962T2 (de) 1996-02-15

Family

ID=15136339

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69020962T Expired - Lifetime DE69020962T2 (de) 1989-05-30 1990-05-30 Einkristallziehvorrichtung und Verfahren.

Country Status (4)

Country Link
US (1) US5096677A (de)
EP (1) EP0400995B1 (de)
JP (1) JP2678383B2 (de)
DE (1) DE69020962T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62152860A (ja) * 1985-12-27 1987-07-07 Canon Inc 液体噴射記録ヘツド
JPH0777996B2 (ja) * 1990-10-12 1995-08-23 信越半導体株式会社 コーン部育成制御方法及び装置
JPH04260686A (ja) * 1991-02-08 1992-09-16 Shin Etsu Handotai Co Ltd 単結晶引上装置
JPH0772116B2 (ja) * 1991-02-15 1995-08-02 信越半導体株式会社 単結晶引上装置
KR100237848B1 (ko) * 1991-04-26 2000-01-15 후루노 토모스케 단결정의 인상방법
DE4301072B4 (de) * 1993-01-16 2006-08-24 Crystal Growing Systems Gmbh Verfahren zum Ziehen von Einkristallen aus einer Schmelze
JP2823035B2 (ja) * 1993-02-10 1998-11-11 信越半導体株式会社 半導体単結晶の引上装置及び引上方法
JP2940439B2 (ja) * 1995-06-10 1999-08-25 信越半導体株式会社 単結晶引上げ装置
JP3402039B2 (ja) * 1995-12-25 2003-04-28 信越半導体株式会社 単結晶製造装置
JP3907727B2 (ja) 1995-12-26 2007-04-18 信越半導体株式会社 単結晶引き上げ装置
US6572700B2 (en) * 1997-12-26 2003-06-03 Sumitomo Electric Industries, Ltd. Semiconductor crystal, and method and apparatus of production thereof
JP3444178B2 (ja) * 1998-02-13 2003-09-08 信越半導体株式会社 単結晶製造方法
DE102005041534A1 (de) 2005-08-31 2007-03-01 Newfrey Llc, Newark Verfahren und Vorrichtung zum Zuführen von Verbindungselementen zu einem Verarbeitungsgerät
JP5945971B2 (ja) 2013-10-29 2016-07-05 信越半導体株式会社 シリコン単結晶引上装置
JP6187486B2 (ja) * 2015-01-19 2017-08-30 トヨタ自動車株式会社 単結晶製造装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3337303A (en) * 1965-03-01 1967-08-22 Elmat Corp Crystal growing apparatus
US3621213A (en) * 1969-11-26 1971-11-16 Ibm Programmed digital-computer-controlled system for automatic growth of semiconductor crystals
US3761692A (en) * 1971-10-01 1973-09-25 Texas Instruments Inc Automated crystal pulling system
US3998598A (en) * 1973-11-23 1976-12-21 Semimetals, Inc. Automatic diameter control for crystal growing facilities
US4511428A (en) * 1982-07-09 1985-04-16 International Business Machines Corporation Method of controlling oxygen content and distribution in grown silicon crystals
JPS61209988A (ja) * 1985-03-13 1986-09-18 Toshiba Corp 化合物半導体単結晶の育成方法
JPS6234717A (ja) * 1985-08-03 1987-02-14 Yutaka Kimura ハンドシヤ−
JPS63277588A (ja) * 1987-03-17 1988-11-15 Fujikura Ltd 単結晶フアイバの製造方法
JPS6424089A (en) * 1987-07-21 1989-01-26 Shinetsu Handotai Kk Device for adjusting initial position of melt surface
JPH01208392A (ja) * 1988-02-16 1989-08-22 Nec Corp 単結晶の育成方法

Also Published As

Publication number Publication date
JP2678383B2 (ja) 1997-11-17
DE69020962T2 (de) 1996-02-15
JPH035394A (ja) 1991-01-11
EP0400995A1 (de) 1990-12-05
EP0400995B1 (de) 1995-07-19
US5096677A (en) 1992-03-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition