DE69017271D1 - Gerät zur Bearbeitung mittels Mikrowellen in einem magnetischen Feld. - Google Patents
Gerät zur Bearbeitung mittels Mikrowellen in einem magnetischen Feld.Info
- Publication number
- DE69017271D1 DE69017271D1 DE69017271T DE69017271T DE69017271D1 DE 69017271 D1 DE69017271 D1 DE 69017271D1 DE 69017271 T DE69017271 T DE 69017271T DE 69017271 T DE69017271 T DE 69017271T DE 69017271 D1 DE69017271 D1 DE 69017271D1
- Authority
- DE
- Germany
- Prior art keywords
- microwaves
- processing
- magnetic field
- magnetic
- field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15291089A JP2840760B2 (ja) | 1989-06-15 | 1989-06-15 | 有磁場マイクロ波処理装置 |
JP1152909A JP2769560B2 (ja) | 1989-06-15 | 1989-06-15 | 有磁場マイクロ波処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69017271D1 true DE69017271D1 (de) | 1995-04-06 |
DE69017271T2 DE69017271T2 (de) | 1995-06-22 |
Family
ID=26481694
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69017271T Expired - Fee Related DE69017271T2 (de) | 1989-06-15 | 1990-06-12 | Gerät zur Bearbeitung mittels Mikrowellen in einem magnetischen Feld. |
Country Status (3)
Country | Link |
---|---|
US (2) | US5302226A (de) |
EP (1) | EP0402867B1 (de) |
DE (1) | DE69017271T2 (de) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05206069A (ja) * | 1992-01-29 | 1993-08-13 | Fujitsu Ltd | プラズマエッチング法及びプラズマエッチング装置 |
JP3194820B2 (ja) * | 1992-09-03 | 2001-08-06 | 株式会社神戸製鋼所 | 配向性ダイヤモンド膜の形成方法 |
KR100311234B1 (ko) * | 1999-01-18 | 2001-11-02 | 학교법인 인하학원 | 고품위 유도결합 플라즈마 리액터 |
US6461980B1 (en) * | 2000-01-28 | 2002-10-08 | Applied Materials, Inc. | Apparatus and process for controlling the temperature of a substrate in a plasma reactor chamber |
US6387207B1 (en) * | 2000-04-28 | 2002-05-14 | Applied Materials, Inc. | Integration of remote plasma generator with semiconductor processing chamber |
DE10037883A1 (de) * | 2000-08-03 | 2002-02-14 | Henkel Kgaa | Ferromagnetische Resonanzanregung und ihre Verwendung zur Erwärmung teilchengefüllter Substrate |
CN100585814C (zh) * | 2001-01-25 | 2010-01-27 | 东京毅力科创株式会社 | 等离子体处理方法 |
JP2002261081A (ja) * | 2001-03-01 | 2002-09-13 | Asm Japan Kk | 半導体ウエハのエッチング装置及び方法 |
JP2006041250A (ja) * | 2004-07-28 | 2006-02-09 | Canon Inc | プラズマ処理装置および方法 |
GB201021853D0 (en) | 2010-12-23 | 2011-02-02 | Element Six Ltd | A microwave plasma reactor for manufacturing synthetic diamond material |
GB201021860D0 (en) | 2010-12-23 | 2011-02-02 | Element Six Ltd | A microwave plasma reactor for diamond synthesis |
CN103370765B (zh) | 2010-12-23 | 2016-09-07 | 六号元素有限公司 | 控制合成金刚石材料的掺杂 |
GB201021865D0 (en) | 2010-12-23 | 2011-02-02 | Element Six Ltd | A microwave plasma reactor for manufacturing synthetic diamond material |
GB201021870D0 (en) | 2010-12-23 | 2011-02-02 | Element Six Ltd | A microwave plasma reactor for manufacturing synthetic diamond material |
GB201021913D0 (en) * | 2010-12-23 | 2011-02-02 | Element Six Ltd | Microwave plasma reactors and substrates for synthetic diamond manufacture |
GB201021855D0 (en) | 2010-12-23 | 2011-02-02 | Element Six Ltd | Microwave power delivery system for plasma reactors |
JP6341565B2 (ja) * | 2014-07-03 | 2018-06-13 | 国立研究開発法人物質・材料研究機構 | プラズマキャビティ用フランジ、プラズマキャビティ及びプラズマcvd装置 |
JP2016225573A (ja) * | 2015-06-03 | 2016-12-28 | 株式会社東芝 | 基板処理装置および基板処理方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5779621A (en) * | 1980-11-05 | 1982-05-18 | Mitsubishi Electric Corp | Plasma processing device |
JPS6074626A (ja) * | 1983-09-30 | 1985-04-26 | Fujitsu Ltd | ウエハー処理方法及び装置 |
KR890004881B1 (ko) * | 1983-10-19 | 1989-11-30 | 가부시기가이샤 히다찌세이사꾸쇼 | 플라즈마 처리 방법 및 그 장치 |
JPH0693447B2 (ja) * | 1983-12-23 | 1994-11-16 | 株式会社日立製作所 | マイクロ波プラズマ処理装置 |
JPH0824114B2 (ja) * | 1984-11-09 | 1996-03-06 | 株式会社日立製作所 | プラズマエッチング方法 |
JPS61131454A (ja) * | 1984-11-30 | 1986-06-19 | Fujitsu Ltd | マイクロ波プラズマ処理方法と装置 |
KR900007687B1 (ko) * | 1986-10-17 | 1990-10-18 | 가부시기가이샤 히다찌세이사꾸쇼 | 플라즈마처리방법 및 장치 |
DE3774098D1 (de) * | 1986-12-29 | 1991-11-28 | Sumitomo Metal Ind | Plasmageraet. |
JPH0715901B2 (ja) * | 1987-09-03 | 1995-02-22 | 株式会社日立製作所 | プラズマ処理装置 |
DE3853890T2 (de) * | 1987-01-19 | 1995-10-19 | Hitachi Ltd | Mit einem Plasma arbeitendes Gerät. |
JPS63213674A (ja) * | 1987-03-02 | 1988-09-06 | Hitachi Ltd | マイクロ波プラズマ処理装置 |
JPH0672306B2 (ja) * | 1987-04-27 | 1994-09-14 | 株式会社半導体エネルギー研究所 | プラズマ処理装置およびプラズマ処理方法 |
DE3853551T2 (de) * | 1987-05-08 | 1995-10-05 | Hitachi Ltd | Plasmabehandlungsvorrichtung. |
JPH01100263A (ja) * | 1987-10-09 | 1989-04-18 | Anelva Corp | Ecr表面反応装置 |
JPH0668152B2 (ja) * | 1988-01-27 | 1994-08-31 | 株式会社半導体エネルギー研究所 | 薄膜形成装置 |
US4950376A (en) * | 1988-06-21 | 1990-08-21 | Agency Of Industrial Science & Technology | Method of gas reaction process control |
JPH0216732A (ja) * | 1988-07-05 | 1990-01-19 | Mitsubishi Electric Corp | プラズマ反応装置 |
JPH0268900A (ja) * | 1988-09-01 | 1990-03-08 | Nissin Electric Co Ltd | マイクロ波プラズマ源 |
JP2670623B2 (ja) * | 1988-09-19 | 1997-10-29 | アネルバ株式会社 | マイクロ波プラズマ処理装置 |
JPH02112232A (ja) * | 1988-10-20 | 1990-04-24 | Sumitomo Metal Ind Ltd | プラズマ装置の操業方法及びプラズマ装置 |
-
1990
- 1990-06-12 DE DE69017271T patent/DE69017271T2/de not_active Expired - Fee Related
- 1990-06-12 EP EP90111110A patent/EP0402867B1/de not_active Expired - Lifetime
-
1992
- 1992-05-29 US US07/892,710 patent/US5302226A/en not_active Expired - Lifetime
-
1994
- 1994-02-10 US US08/194,571 patent/US5609774A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69017271T2 (de) | 1995-06-22 |
US5302226A (en) | 1994-04-12 |
US5609774A (en) | 1997-03-11 |
EP0402867A3 (de) | 1991-07-24 |
EP0402867B1 (de) | 1995-03-01 |
EP0402867A2 (de) | 1990-12-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |