DE69017071D1 - Plasmaätzvorrichtung mit Magnetfeldern an der Oberfläche. - Google Patents
Plasmaätzvorrichtung mit Magnetfeldern an der Oberfläche.Info
- Publication number
- DE69017071D1 DE69017071D1 DE69017071T DE69017071T DE69017071D1 DE 69017071 D1 DE69017071 D1 DE 69017071D1 DE 69017071 T DE69017071 T DE 69017071T DE 69017071 T DE69017071 T DE 69017071T DE 69017071 D1 DE69017071 D1 DE 69017071D1
- Authority
- DE
- Germany
- Prior art keywords
- etching
- regulate
- electrode
- magnetic field
- control plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32688—Multi-cusp fields
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- ing And Chemical Polishing (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/347,844 US5032205A (en) | 1989-05-05 | 1989-05-05 | Plasma etching apparatus with surface magnetic fields |
Publications (1)
Publication Number | Publication Date |
---|---|
DE69017071D1 true DE69017071D1 (de) | 1995-03-30 |
Family
ID=23365525
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69017071T Expired - Lifetime DE69017071D1 (de) | 1989-05-05 | 1990-05-02 | Plasmaätzvorrichtung mit Magnetfeldern an der Oberfläche. |
Country Status (6)
Country | Link |
---|---|
US (1) | US5032205A (de) |
EP (1) | EP0396398B1 (de) |
JP (1) | JPH0320027A (de) |
AT (1) | ATE118924T1 (de) |
CA (1) | CA2015976A1 (de) |
DE (1) | DE69017071D1 (de) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6488807B1 (en) * | 1991-06-27 | 2002-12-03 | Applied Materials, Inc. | Magnetic confinement in a plasma reactor having an RF bias electrode |
US5849136A (en) * | 1991-10-11 | 1998-12-15 | Applied Materials, Inc. | High frequency semiconductor wafer processing apparatus and method |
EP0537950B1 (de) * | 1991-10-17 | 1997-04-02 | Applied Materials, Inc. | Plasmareaktor |
US5518547A (en) * | 1993-12-23 | 1996-05-21 | International Business Machines Corporation | Method and apparatus for reducing particulates in a plasma tool through steady state flows |
US5451259A (en) * | 1994-02-17 | 1995-09-19 | Krogh; Ole D. | ECR plasma source for remote processing |
US5653811A (en) | 1995-07-19 | 1997-08-05 | Chan; Chung | System for the plasma treatment of large area substrates |
KR0155950B1 (ko) * | 1995-08-16 | 1998-12-01 | 김광호 | 플라즈마 확산 제어 방법 및 그 장치 |
KR100226366B1 (ko) * | 1995-08-23 | 1999-10-15 | 아끼구사 나오유끼 | 플라즈마장치 및 플라즈마 처리방법 |
TW303480B (en) * | 1996-01-24 | 1997-04-21 | Applied Materials Inc | Magnetically confined plasma reactor for processing a semiconductor wafer |
US6048435A (en) * | 1996-07-03 | 2000-04-11 | Tegal Corporation | Plasma etch reactor and method for emerging films |
US6500314B1 (en) * | 1996-07-03 | 2002-12-31 | Tegal Corporation | Plasma etch reactor and method |
US6274459B1 (en) | 1998-02-17 | 2001-08-14 | Silicon Genesis Corporation | Method for non mass selected ion implant profile control |
US6156154A (en) * | 1998-06-24 | 2000-12-05 | Seagate Technology, Inc. | Apparatus for etching discs and pallets prior to sputter deposition |
WO2000032839A1 (en) * | 1998-12-01 | 2000-06-08 | Silicon Genesis Corporation | Enhanced plasma mode, method, and system for plasma immersion ion implantation |
US6300227B1 (en) | 1998-12-01 | 2001-10-09 | Silicon Genesis Corporation | Enhanced plasma mode and system for plasma immersion ion implantation |
US6458723B1 (en) | 1999-06-24 | 2002-10-01 | Silicon Genesis Corporation | High temperature implant apparatus |
US6322661B1 (en) * | 1999-11-15 | 2001-11-27 | Lam Research Corporation | Method and apparatus for controlling the volume of a plasma |
US6341574B1 (en) | 1999-11-15 | 2002-01-29 | Lam Research Corporation | Plasma processing systems |
KR100751740B1 (ko) * | 1999-11-15 | 2007-08-24 | 램 리써치 코포레이션 | 공정 시스템들을 위한 재료들과 기체 화학성분들 |
US7067034B2 (en) | 2000-03-27 | 2006-06-27 | Lam Research Corporation | Method and apparatus for plasma forming inner magnetic bucket to control a volume of a plasma |
KR100488348B1 (ko) * | 2002-11-14 | 2005-05-10 | 최대규 | 플라즈마 프로세스 챔버 및 시스템 |
JP4416797B2 (ja) | 2003-11-07 | 2010-02-17 | ネクステージ メディカル インコーポレイテッド | 血液処理システムにおける漏れ検出のための改善方法及び装置 |
JP4527431B2 (ja) * | 2004-04-08 | 2010-08-18 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US7410593B2 (en) * | 2006-02-22 | 2008-08-12 | Macronix International Co., Ltd. | Plasma etching methods using nitrogen memory species for sustaining glow discharge |
CN101452806B (zh) * | 2007-12-05 | 2010-04-21 | 中国科学院大连化学物理研究所 | 一种电离源及其在质谱或离子迁移谱中的应用 |
EP2353176A4 (de) * | 2008-11-07 | 2013-08-28 | Asm Inc | Reaktionskammer |
CN104878392B (zh) * | 2015-06-24 | 2017-05-31 | 安徽纯源镀膜科技有限公司 | 离子束清洗刻蚀设备 |
JP6396618B1 (ja) * | 2018-04-03 | 2018-09-26 | グローテクノロジー株式会社 | グロー放電システム及びこれを用いたグロー放電質量分析装置 |
CN112630288B (zh) * | 2020-11-17 | 2021-10-12 | 燕山大学 | 一种基于放电的二次电子发射系数测量装置及方法 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1068535B (it) * | 1975-11-03 | 1985-03-21 | Ibm | Apparecchio e processo elettrolito grafico |
CH648690A5 (de) * | 1980-10-14 | 1985-03-29 | Balzers Hochvakuum | Kathodenanordnung zur abstaeubung von material von einem target in einer kathodenzerstaeubungsanlage. |
US4380488A (en) * | 1980-10-14 | 1983-04-19 | Branson International Plasma Corporation | Process and gas mixture for etching aluminum |
EP0054201B1 (de) * | 1980-12-11 | 1986-11-05 | Kabushiki Kaisha Toshiba | Apparat zum Trockenätzen und Verfahren |
US4422896A (en) * | 1982-01-26 | 1983-12-27 | Materials Research Corporation | Magnetically enhanced plasma process and apparatus |
US4483737A (en) * | 1983-01-31 | 1984-11-20 | University Of Cincinnati | Method and apparatus for plasma etching a substrate |
JPH0666298B2 (ja) * | 1983-02-03 | 1994-08-24 | 日電アネルバ株式会社 | ドライエッチング装置 |
JPS6134177A (ja) * | 1984-07-25 | 1986-02-18 | Tokuda Seisakusho Ltd | マグネツト駆動装置 |
FR2583250B1 (fr) * | 1985-06-07 | 1989-06-30 | France Etat | Procede et dispositif d'excitation d'un plasma par micro-ondes a la resonance cyclotronique electronique |
JPH0682642B2 (ja) * | 1985-08-09 | 1994-10-19 | 株式会社日立製作所 | 表面処理装置 |
US4632719A (en) * | 1985-09-18 | 1986-12-30 | Varian Associates, Inc. | Semiconductor etching apparatus with magnetic array and vertical shield |
US4657619A (en) * | 1985-11-29 | 1987-04-14 | Donnell Kevin P O | Diverter magnet arrangement for plasma processing system |
JPS62222633A (ja) * | 1986-03-25 | 1987-09-30 | Sharp Corp | 半導体素子の製造方法 |
DE3615361C2 (de) * | 1986-05-06 | 1994-09-01 | Santos Pereira Ribeiro Car Dos | Vorrichtung zur Oberflächenbehandlung von Werkstücken |
US4842707A (en) * | 1986-06-23 | 1989-06-27 | Oki Electric Industry Co., Ltd. | Dry process apparatus |
US4776918A (en) * | 1986-10-20 | 1988-10-11 | Hitachi, Ltd. | Plasma processing apparatus |
JPH0834205B2 (ja) * | 1986-11-21 | 1996-03-29 | 株式会社東芝 | ドライエツチング装置 |
JPS63183181A (ja) * | 1987-01-23 | 1988-07-28 | Anelva Corp | マグネトロンスパツタエツチング装置 |
US4878995A (en) * | 1987-07-02 | 1989-11-07 | Kabushiki Kaisha Toshiba | Method of dry etching and apparatus for use in such method |
US4846928A (en) * | 1987-08-04 | 1989-07-11 | Texas Instruments, Incorporated | Process and apparatus for detecting aberrations in production process operations |
US4778561A (en) * | 1987-10-30 | 1988-10-18 | Veeco Instruments, Inc. | Electron cyclotron resonance plasma source |
US4842703A (en) * | 1988-02-23 | 1989-06-27 | Eaton Corporation | Magnetron cathode and method for sputter coating |
-
1989
- 1989-05-05 US US07/347,844 patent/US5032205A/en not_active Expired - Fee Related
-
1990
- 1990-05-02 EP EP90304765A patent/EP0396398B1/de not_active Expired - Lifetime
- 1990-05-02 DE DE69017071T patent/DE69017071D1/de not_active Expired - Lifetime
- 1990-05-02 AT AT90304765T patent/ATE118924T1/de not_active IP Right Cessation
- 1990-05-03 CA CA002015976A patent/CA2015976A1/en not_active Abandoned
- 1990-05-07 JP JP2117273A patent/JPH0320027A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JPH0320027A (ja) | 1991-01-29 |
CA2015976A1 (en) | 1990-11-05 |
ATE118924T1 (de) | 1995-03-15 |
US5032205A (en) | 1991-07-16 |
EP0396398B1 (de) | 1995-02-22 |
EP0396398A1 (de) | 1990-11-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8332 | No legal effect for de |