DE69016134D1 - Verfahren zur Herstellung einer Polyimid Dünnschicht sowie Verfahren zur Herstellung einer Flüssigkristallorientierungsschicht aus Poyimid. - Google Patents

Verfahren zur Herstellung einer Polyimid Dünnschicht sowie Verfahren zur Herstellung einer Flüssigkristallorientierungsschicht aus Poyimid.

Info

Publication number
DE69016134D1
DE69016134D1 DE69016134T DE69016134T DE69016134D1 DE 69016134 D1 DE69016134 D1 DE 69016134D1 DE 69016134 T DE69016134 T DE 69016134T DE 69016134 T DE69016134 T DE 69016134T DE 69016134 D1 DE69016134 D1 DE 69016134D1
Authority
DE
Germany
Prior art keywords
producing
polyimide
liquid crystal
thin film
layer made
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69016134T
Other languages
English (en)
Other versions
DE69016134T2 (de
Inventor
Katsuyuki Naito
Shinya Aoki
Toshio Nakayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69016134D1 publication Critical patent/DE69016134D1/de
Publication of DE69016134T2 publication Critical patent/DE69016134T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/13378—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by treatment of the surface, e.g. embossing, rubbing or light irradiation
DE69016134T 1989-08-25 1990-08-24 Verfahren zur Herstellung einer Polyimid Dünnschicht sowie Verfahren zur Herstellung einer Flüssigkristallorientierungsschicht aus Poyimid. Expired - Fee Related DE69016134T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21939589 1989-08-25

Publications (2)

Publication Number Publication Date
DE69016134D1 true DE69016134D1 (de) 1995-03-02
DE69016134T2 DE69016134T2 (de) 1995-06-22

Family

ID=16734744

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69016134T Expired - Fee Related DE69016134T2 (de) 1989-08-25 1990-08-24 Verfahren zur Herstellung einer Polyimid Dünnschicht sowie Verfahren zur Herstellung einer Flüssigkristallorientierungsschicht aus Poyimid.

Country Status (4)

Country Link
US (1) US5061509A (de)
EP (1) EP0414560B1 (de)
JP (1) JPH03170400A (de)
DE (1) DE69016134T2 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2712621B2 (ja) * 1989-09-11 1998-02-16 日本合成ゴム株式会社 ポジ型ホトレジスト材料
US5200238A (en) * 1990-06-22 1993-04-06 Loctite (Ireland) Limited Liquid crystal display devices and method of manufacture
JPH0743726A (ja) * 1993-05-28 1995-02-14 Hoechst Japan Ltd 液晶表示素子
US5502246A (en) * 1994-03-22 1996-03-26 Eli Lilly And Company Solid-phase synthesis utilizing photochemical carbon-sulfur bond cleavage of thioethers
US5849403A (en) * 1995-09-13 1998-12-15 Kabushiki Kaisha Toshiba Organic thin film device
EP0919851B1 (de) * 1996-03-05 2003-10-22 Nissan Chemical Industries, Limited Verfahren zum ausrichten von flussigkristallen
US5943154A (en) * 1996-09-17 1999-08-24 Kabushiki Kaisha Toshiba Optically-controlled light control element
TW523630B (en) * 1997-05-16 2003-03-11 Hitachi Ltd Active matrix type liquid crystal display device
US6274292B1 (en) 1998-02-25 2001-08-14 Micron Technology, Inc. Semiconductor processing methods
US7804115B2 (en) 1998-02-25 2010-09-28 Micron Technology, Inc. Semiconductor constructions having antireflective portions
US6281100B1 (en) 1998-09-03 2001-08-28 Micron Technology, Inc. Semiconductor processing methods
US6268282B1 (en) 1998-09-03 2001-07-31 Micron Technology, Inc. Semiconductor processing methods of forming and utilizing antireflective material layers, and methods of forming transistor gate stacks
SG87769A1 (en) * 1998-09-29 2002-04-16 Texas Instr Singapore Pte Ltd Direct attachment of semiconductor chip to organic substrate
US6156674A (en) * 1998-11-25 2000-12-05 Micron Technology, Inc. Semiconductor processing methods of forming insulative materials
US6828683B2 (en) 1998-12-23 2004-12-07 Micron Technology, Inc. Semiconductor devices, and semiconductor processing methods
US7235499B1 (en) 1999-01-20 2007-06-26 Micron Technology, Inc. Semiconductor processing methods
US7067414B1 (en) 1999-09-01 2006-06-27 Micron Technology, Inc. Low k interlevel dielectric layer fabrication methods
US7042070B2 (en) * 1999-09-22 2006-05-09 Texas Instruments Incorporated Direct attachment of semiconductor chip to organic substrate
US6440860B1 (en) 2000-01-18 2002-08-27 Micron Technology, Inc. Semiconductor processing methods of transferring patterns from patterned photoresists to materials, and structures comprising silicon nitride
JP2004128195A (ja) * 2002-10-02 2004-04-22 Oki Electric Ind Co Ltd 保護膜の製造方法
EP1969618B1 (de) * 2005-12-29 2018-01-24 3M Innovative Properties Company Verfahren zum atomisieren von material für beschichtungsprozesse
JP4957077B2 (ja) * 2006-05-23 2012-06-20 三菱化学株式会社 テトラカルボン酸類またはこれらから誘導されるポリエステルイミド及びその製造方法
JP5115997B1 (ja) * 2011-12-27 2013-01-09 独立行政法人産業技術総合研究所 走査型電子顕微鏡像観察用の試料支持部材及び走査型電子顕微鏡像の観察方法
JP6507837B2 (ja) * 2014-08-29 2019-05-08 Jsr株式会社 液晶配向剤、液晶配向膜及びその製造方法、液晶表示素子、並びに位相差フィルム及びその製造方法
KR102621459B1 (ko) * 2016-04-20 2024-01-05 삼성디스플레이 주식회사 배향막 조성물, 이를 포함하는 액정 표시 장치 및 액정 표시 장치 제조방법
US9909066B2 (en) * 2016-04-21 2018-03-06 Samsung Display Co., Ltd. Alignment layer composition, liquid crystal display including the alignment layer composition, and manufacturing method of the liquid crystal display
KR102651720B1 (ko) * 2016-04-21 2024-03-29 삼성디스플레이 주식회사 배향막 조성물, 이를 포함하는 액정 표시 장치 및 액정 표시 장치 제조방법
KR20180070262A (ko) * 2016-12-16 2018-06-26 엘지디스플레이 주식회사 기판, 이를 포함하는 액정표시장치 및 그 제조방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1298453A (en) * 1969-01-02 1972-12-06 Nat Res Dev Production of polymer films by evaporation
US3791848A (en) * 1972-05-19 1974-02-12 Western Electric Co A method of improving the adherence of a metal deposit to a polyimide surface
JPS57116771A (en) * 1981-01-13 1982-07-20 Matsushita Electric Ind Co Ltd Formation of protecting film
DE3107633A1 (de) * 1981-02-27 1982-09-16 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung duenner polyimidschichten"
GB2109123B (en) * 1981-09-14 1986-03-19 Sharp Kk Colour liquid crystal display devices
DE3777844D1 (de) * 1986-01-22 1992-05-07 Hitachi Ltd Fluessigkristallanzeigeelement.
US4879059A (en) * 1986-09-02 1989-11-07 Canon Kabushiki Kaisha Liquid crystal device

Also Published As

Publication number Publication date
EP0414560B1 (de) 1995-01-18
EP0414560A2 (de) 1991-02-27
EP0414560A3 (en) 1991-12-27
JPH03170400A (ja) 1991-07-23
US5061509A (en) 1991-10-29
DE69016134T2 (de) 1995-06-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee