DE69007502T2 - Von einer Vorrichtung mit zwei symmetrischen Ladungspumpen gesteuerte Leistungs-MOS-Transistorschaltung. - Google Patents

Von einer Vorrichtung mit zwei symmetrischen Ladungspumpen gesteuerte Leistungs-MOS-Transistorschaltung.

Info

Publication number
DE69007502T2
DE69007502T2 DE1990607502 DE69007502T DE69007502T2 DE 69007502 T2 DE69007502 T2 DE 69007502T2 DE 1990607502 DE1990607502 DE 1990607502 DE 69007502 T DE69007502 T DE 69007502T DE 69007502 T2 DE69007502 T2 DE 69007502T2
Authority
DE
Germany
Prior art keywords
mos transistor
transistor circuit
power mos
charge pumps
circuit controlled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE1990607502
Other languages
English (en)
Other versions
DE69007502D1 (de
Inventor
Michel Barou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
SGS Thomson Microelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SA filed Critical SGS Thomson Microelectronics SA
Application granted granted Critical
Publication of DE69007502D1 publication Critical patent/DE69007502D1/de
Publication of DE69007502T2 publication Critical patent/DE69007502T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10Regulating voltage or current
    • G05F1/46Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/56Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
    • G05F1/575Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices characterised by the feedback circuit
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06Modifications for ensuring a fully conducting state
    • H03K17/063Modifications for ensuring a fully conducting state in field-effect transistor switches

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Electronic Switches (AREA)
  • Amplifiers (AREA)
  • Dc-Dc Converters (AREA)
DE1990607502 1989-01-23 1990-01-19 Von einer Vorrichtung mit zwei symmetrischen Ladungspumpen gesteuerte Leistungs-MOS-Transistorschaltung. Expired - Fee Related DE69007502T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8901231A FR2642240B1 (fr) 1989-01-23 1989-01-23 Circuit a transistor mos de puissance commande par un dispositif a deux pompes de charge symetriques

Publications (2)

Publication Number Publication Date
DE69007502D1 DE69007502D1 (de) 1994-04-28
DE69007502T2 true DE69007502T2 (de) 1994-08-18

Family

ID=9378328

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1990607502 Expired - Fee Related DE69007502T2 (de) 1989-01-23 1990-01-19 Von einer Vorrichtung mit zwei symmetrischen Ladungspumpen gesteuerte Leistungs-MOS-Transistorschaltung.

Country Status (4)

Country Link
EP (1) EP0379454B1 (de)
JP (1) JP2920984B2 (de)
DE (1) DE69007502T2 (de)
FR (1) FR2642240B1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1251011B (it) * 1991-02-18 1995-04-28 Sgs Thomson Microelectronics Dispositivo di controllo di corrente particolarmente per circuiti di potenza in tecnologia mos
US5347171A (en) * 1992-10-15 1994-09-13 United Memories, Inc. Efficient negative charge pump
US5412257A (en) * 1992-10-20 1995-05-02 United Memories, Inc. High efficiency N-channel charge pump having a primary pump and a non-cascaded secondary pump
JP3431774B2 (ja) * 1995-10-31 2003-07-28 ヒュンダイ エレクトロニクス アメリカ 混合電圧システムのための出力ドライバ
ES2194091T3 (es) * 1996-12-05 2003-11-16 St Microelectronics Srl Circuito de control de un transistor de potencia para un regulador de voltaje.
DE19812920C2 (de) * 1998-03-24 2000-09-07 Siemens Ag Schaltungsanordnung zur Steuerung und Erfassung des Laststromes durch eine Last
DE19844665C1 (de) * 1998-09-29 2000-03-30 Siemens Ag Schaltungsanordnung zur Steuerung und Erfassung des Laststromes durch eine Last
JP2009296455A (ja) * 2008-06-06 2009-12-17 Epe Kk 負荷駆動装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4560918A (en) * 1984-04-02 1985-12-24 Rca Corporation High-efficiency, low-voltage-drop series regulator using as its pass element an enhancement-mode FET with boosted gate voltage
US4803612A (en) * 1988-06-08 1989-02-07 National Semiconductor Corporation Clock ripple reduction in a linear low dropout C/DMOS regulator

Also Published As

Publication number Publication date
EP0379454A1 (de) 1990-07-25
DE69007502D1 (de) 1994-04-28
FR2642240B1 (fr) 1994-07-29
EP0379454B1 (de) 1994-03-23
JP2920984B2 (ja) 1999-07-19
FR2642240A1 (fr) 1990-07-27
JPH02233015A (ja) 1990-09-14

Similar Documents

Publication Publication Date Title
DE3683245D1 (de) Vorrichtung mit zwei daempfern.
DE3671101D1 (de) Vorrichtung mit mindestens zwei starren verbindungsteilen.
DE69013233T2 (de) Tragbare elektronische Vorrichtung mit vielseitigem Programmspeicher.
DE68907779T2 (de) Elektrisches geraet mit zwei generatoren.
DE69016850D1 (de) Lade-Entladeschaltung.
DE68910530D1 (de) Durch mikrowellen angetriebene heizvorrichtung.
DE69020316T2 (de) MOS-Schaltkreis mit einem Gate-optimierten lateralen bipolaren Transistor.
DE3672945D1 (de) Vorrichtung mit zwei daempfern.
DE69009786D1 (de) Schaltungsanordnung mit Mehrfachrückkopplung.
DE69016748T2 (de) Hochleistungshalbleiteranordnung mit Gehäuse.
DE3771648D1 (de) Halbleiterbauelement mit mindestens einem leistungs-mosfet.
DE69027724T2 (de) Leistungshalbleiteranordnung mit Plastikumhüllung
DE69007502D1 (de) Von einer Vorrichtung mit zwei symmetrischen Ladungspumpen gesteuerte Leistungs-MOS-Transistorschaltung.
DE69000181D1 (de) Elektronisches zeitmessgeraet mit mindestens zwei motoren.
DE3888148D1 (de) Integrierte Schaltung mit einem Lateraltransistor.
DE3585225D1 (de) Planare halbleitervorrichtung mit einer feldplatte.
DE69002837D1 (de) Vorrichtung mit zwei sich auseinanderbewegenden Läden.
DE3887398D1 (de) Elektronisches, berührungslos arbeitendes Schaltgerät.
DE59007053D1 (de) Leistungs-Halbleiterbauelement mit Emitterkurzschlüssen.
DE3585173D1 (de) Halbleiterbauelement mit versenktem kondensator.
DE3779153D1 (de) Halbleitervorrichtung mit einer darlington-transistorschaltung.
DE68915683T2 (de) Elektronisches Gerät mit kleinen Abmessungen.
DE59006686D1 (de) Leistungshalbleiterbauelement mit Trägerplatten.
DE69019698T2 (de) MOS-Bauteile mit einer verbesserten elektrischen Anpassung.
DE3784029D1 (de) Formularverarbeitungsgeraet mit ferngesteuerter ueberarbeitung.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee