DE68910597T2 - Ausgangsspannungs-Regulierung eines Spannungsvervielfachers. - Google Patents

Ausgangsspannungs-Regulierung eines Spannungsvervielfachers.

Info

Publication number
DE68910597T2
DE68910597T2 DE89830291T DE68910597T DE68910597T2 DE 68910597 T2 DE68910597 T2 DE 68910597T2 DE 89830291 T DE89830291 T DE 89830291T DE 68910597 T DE68910597 T DE 68910597T DE 68910597 T2 DE68910597 T2 DE 68910597T2
Authority
DE
Germany
Prior art keywords
voltage
multiplier
regulation
output voltage
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE89830291T
Other languages
English (en)
Other versions
DE68910597D1 (de
Inventor
Marco Olivo
Luigi Pascucci
Corrado Villa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
SGS Thomson Microelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SRL filed Critical SGS Thomson Microelectronics SRL
Application granted granted Critical
Publication of DE68910597D1 publication Critical patent/DE68910597D1/de
Publication of DE68910597T2 publication Critical patent/DE68910597T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073—Charge pumps of the Schenkel-type

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
DE89830291T 1988-07-06 1989-06-23 Ausgangsspannungs-Regulierung eines Spannungsvervielfachers. Expired - Fee Related DE68910597T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8883647A IT1225608B (it) 1988-07-06 1988-07-06 Regolazione della tensione prodotta da un moltiplicatore di tensione.

Publications (2)

Publication Number Publication Date
DE68910597D1 DE68910597D1 (de) 1993-12-16
DE68910597T2 true DE68910597T2 (de) 1994-03-03

Family

ID=11323612

Family Applications (1)

Application Number Title Priority Date Filing Date
DE89830291T Expired - Fee Related DE68910597T2 (de) 1988-07-06 1989-06-23 Ausgangsspannungs-Regulierung eines Spannungsvervielfachers.

Country Status (5)

Country Link
US (2) US4933827A (de)
EP (1) EP0350462B1 (de)
JP (1) JPH0265269A (de)
DE (1) DE68910597T2 (de)
IT (1) IT1225608B (de)

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JPH03144879A (ja) * 1989-10-31 1991-06-20 Mitsubishi Electric Corp 携帯型半導体記憶装置
KR920006991A (ko) * 1990-09-25 1992-04-28 김광호 반도체메모리 장치의 고전압발생회로
US5253202A (en) * 1991-02-05 1993-10-12 International Business Machines Corporation Word line driver circuit for dynamic random access memories
JPH04372571A (ja) * 1991-06-19 1992-12-25 Nec Ic Microcomput Syst Ltd 定電圧発生回路
JPH05111242A (ja) * 1991-09-17 1993-04-30 Samsung Electron Co Ltd 半導体装置の定電圧発生器
NL9200057A (nl) * 1992-01-14 1993-08-02 Sierra Semiconductor Bv Terugkoppelnetwerk voor cmos hoogspanningsgenerator om (e)eprom-geheugen cellen te programmeren.
US5216588A (en) * 1992-02-14 1993-06-01 Catalyst Semiconductor, Inc. Charge pump with high output current
EP0569658B1 (de) * 1992-05-15 1998-08-12 STMicroelectronics S.r.l. Generator für Signale mit höher Frequenz und nicht-überlappenden Phasen
US5301097A (en) * 1992-06-10 1994-04-05 Intel Corporation Multi-staged charge-pump with staggered clock phases for providing high current capability
FR2696598B1 (fr) * 1992-10-01 1994-11-04 Sgs Thomson Microelectronics Circuit élévateur de tension de type pompe de charge avec oscillateur bootstrapé.
KR960703483A (ko) * 1993-06-28 1996-08-17 존 엠. 클락 3세 일정 고전압 발생기(constant high voltage generator)
US5526253A (en) * 1993-09-22 1996-06-11 Advanced Micro Devices, Inc. Low power voltage boost circuit with regulated output
JP2639325B2 (ja) * 1993-11-30 1997-08-13 日本電気株式会社 定電圧発生回路
JP3417630B2 (ja) * 1993-12-17 2003-06-16 株式会社日立製作所 半導体集積回路装置とフラッシュメモリ及び不揮発性記憶装置
DE69312305T2 (de) * 1993-12-28 1998-01-15 Sgs Thomson Microelectronics Spannungsbooster, insbesondere für nichtflüchtige Speicher
US5532915A (en) * 1994-03-23 1996-07-02 Intel Corporation Method and apparatus for providing an ultra low power regulated negative charge pump
EP0691729A3 (de) * 1994-06-30 1996-08-14 Sgs Thomson Microelectronics Ladungspumpenschaltung mit Rückkopplungssteuerung
JP3184065B2 (ja) * 1994-07-25 2001-07-09 セイコーインスツルメンツ株式会社 半導体集積回路装置及び電子機器
FR2724468B1 (fr) * 1994-09-14 1996-11-15 Suisse Electronique Microtech Dispositif electronique comportant un multiplicateur de tension
DE4443690A1 (de) * 1994-12-08 1996-06-20 Martin Prof Dr Poppe Monolithische integrierbare Schaltung zur Gleichspannungswandlung
FR2737066B1 (fr) * 1995-07-20 1997-09-19 Matra Mhs Dispositif de conversion analogique-numerique
US5793246A (en) * 1995-11-08 1998-08-11 Altera Corporation High voltage pump scheme incorporating an overlapping clock
EP0782149B1 (de) * 1995-12-29 2003-05-28 STMicroelectronics S.r.l. Anordnung zum Erzeugen und Regeln einer Gate-Spannung in einem nichtflüchtigen Speicher
DE19612443C2 (de) * 1996-03-28 1998-02-05 Siemens Ag Schaltungsanordnung zur Versorgung eines elektronischen Lastkreises
DE69631518D1 (de) * 1996-04-30 2004-03-18 St Microelectronics Srl Vorspannungsschaltung für UPROM-Zellen mit niedriger Versorgungsspannung
DE19627197C1 (de) * 1996-07-05 1998-03-26 Siemens Ag Vorrichtung zur Spannungsvervielfachung mit geringer Abhängigkeit der Ausgangsspannung von der Versorgungsspannung
DE19639701C2 (de) * 1996-09-26 1998-12-03 Siemens Ag Regelschaltung für Ladungspumpen
US5939934A (en) * 1996-12-03 1999-08-17 Stmicroelectronics, Inc. Integrated circuit passively biasing transistor effective threshold voltage and related methods
US5883544A (en) * 1996-12-03 1999-03-16 Stmicroelectronics, Inc. Integrated circuit actively biasing the threshold voltage of transistors and related methods
US5834966A (en) * 1996-12-08 1998-11-10 Stmicroelectronics, Inc. Integrated circuit sensing and digitally biasing the threshold voltage of transistors and related methods
FR2761214B1 (fr) * 1997-03-19 1999-05-21 Sgs Thomson Microelectronics Circuit elevateur de tension du type pompe de charge a nombre d'etages controle
US5929695A (en) * 1997-06-02 1999-07-27 Stmicroelectronics, Inc. Integrated circuit having selective bias of transistors for low voltage and low standby current and related methods
FR2783617B1 (fr) * 1998-09-18 2000-12-22 St Microelectronics Sa Systeme de regulation d'une pompe de charge
EP1014547A3 (de) 1998-12-21 2000-11-15 Fairchild Semiconductor Corporation Ladungspumpesystem für niedrigen Strom
JP3656495B2 (ja) * 2000-01-25 2005-06-08 セイコーエプソン株式会社 Ｄｃ−ｄｃ昇圧方法及びそれを用いた電源回路
US6430067B1 (en) * 2001-04-12 2002-08-06 Sun Microsystems, Inc. Voltage multiplier for low voltage microprocessor
US6639864B2 (en) * 2001-12-18 2003-10-28 Intel Corporation Flash device operating from a power-supply-in-package (PSIP) or from a power supply on chip
DE10297335T5 (de) * 2002-09-11 2004-11-18 Mitsubishi Denki K.K. Spannungserfassungsschaltung und dieselbe benutzende Erzeugungsschaltung für interne Spannung
TWI220588B (en) * 2003-05-15 2004-08-21 Amic Technology Corp Regulated charge pump
WO2005043733A1 (en) * 2003-11-03 2005-05-12 Koninklijke Philips Electronics N.V. Apparatus serving as high voltage charge pump and circuit based thereon
US7372318B2 (en) * 2004-07-26 2008-05-13 Honeywell International Inc. Precision, low drift, stacked voltage reference
FR2878986B1 (fr) 2004-12-08 2007-04-27 Atmel Corp Principe de regulation de puissance d'une sortie a haute tension dans des dispositifs de circuits integres
US8736351B2 (en) * 2011-01-13 2014-05-27 Taiwan Semiconductor Manufacturing Co., Ltd. Negative charge pump
US8888466B2 (en) * 2011-05-05 2014-11-18 Johnson Controls Technology Company Compressor
EP2827483A1 (de) * 2013-07-15 2015-01-21 Infineon Technologies AG Schaltkreis, mehrarmige Ladungspumpe, Verfahren zur Steuerung einer Ladungspumpe und System
CN110463002B (zh) 2017-02-16 2023-05-09 瑞声科技(新加坡)有限公司 电荷泵系统、设备和方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4250414A (en) * 1978-07-31 1981-02-10 Bell Telephone Laboratories, Incorporated Voltage generator circuitry
US4302804A (en) * 1979-09-04 1981-11-24 Burroughs Corporation DC Voltage multiplier using phase-sequenced CMOS switches
US4346310A (en) * 1980-05-09 1982-08-24 Motorola, Inc. Voltage booster circuit
US4344003A (en) * 1980-08-04 1982-08-10 Rca Corporation Low power voltage multiplier circuit
US4322675A (en) * 1980-11-03 1982-03-30 Fairchild Camera & Instrument Corp. Regulated MOS substrate bias voltage generator for a static random access memory
JPS57204640A (en) * 1981-06-12 1982-12-15 Fujitsu Ltd Generating circuit of substrate bias voltage
US4638464A (en) * 1983-11-14 1987-01-20 International Business Machines Corp. Charge pump system for non-volatile ram
JPS6159688A (ja) * 1984-08-31 1986-03-27 Hitachi Ltd 半導体集積回路装置
JPS61268053A (ja) * 1985-05-22 1986-11-27 Mitsubishi Electric Corp 昇圧回路
US4621315A (en) * 1985-09-03 1986-11-04 Motorola, Inc. Recirculating MOS charge pump

Also Published As

Publication number Publication date
IT1225608B (it) 1990-11-22
IT8883647A0 (it) 1988-07-06
USRE35121E (en) 1995-12-12
JPH0265269A (ja) 1990-03-05
EP0350462B1 (de) 1993-11-10
US4933827A (en) 1990-06-12
EP0350462A2 (de) 1990-01-10
EP0350462A3 (en) 1990-05-30
DE68910597D1 (de) 1993-12-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee