DE68928826D1 - Reaktives Ionenätzen von Silicium enthaltenden Materialien mittels Bromwasserstoff - Google Patents

Reaktives Ionenätzen von Silicium enthaltenden Materialien mittels Bromwasserstoff

Info

Publication number
DE68928826D1
DE68928826D1 DE68928826T DE68928826T DE68928826D1 DE 68928826 D1 DE68928826 D1 DE 68928826D1 DE 68928826 T DE68928826 T DE 68928826T DE 68928826 T DE68928826 T DE 68928826T DE 68928826 D1 DE68928826 D1 DE 68928826D1
Authority
DE
Germany
Prior art keywords
reactive ion
ion etching
containing materials
hydrogen bromide
silicon containing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE68928826T
Other languages
English (en)
Other versions
DE68928826T2 (de
Inventor
Len-Yuan Tsou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of DE68928826D1 publication Critical patent/DE68928826D1/de
Application granted granted Critical
Publication of DE68928826T2 publication Critical patent/DE68928826T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
DE68928826T 1988-07-11 1989-07-05 Reaktives Ionenätzen von Silicium enthaltenden Materialien mittels Bromwasserstoff Expired - Lifetime DE68928826T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/217,536 US5007982A (en) 1988-07-11 1988-07-11 Reactive ion etching of silicon with hydrogen bromide

Publications (2)

Publication Number Publication Date
DE68928826D1 true DE68928826D1 (de) 1998-11-12
DE68928826T2 DE68928826T2 (de) 1999-05-12

Family

ID=22811475

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68928826T Expired - Lifetime DE68928826T2 (de) 1988-07-11 1989-07-05 Reaktives Ionenätzen von Silicium enthaltenden Materialien mittels Bromwasserstoff

Country Status (5)

Country Link
US (1) US5007982A (de)
EP (1) EP0350997B1 (de)
JP (1) JPH0670989B2 (de)
KR (1) KR0185372B1 (de)
DE (1) DE68928826T2 (de)

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EP0565212A2 (de) * 1986-12-19 1993-10-13 Applied Materials, Inc. Iodine-Ätzverfahren für Silizium und Silizide
US5316616A (en) * 1988-02-09 1994-05-31 Fujitsu Limited Dry etching with hydrogen bromide or bromine
DE69126149T2 (de) * 1990-01-22 1998-01-02 Sony Corp Trockenätzverfahren
JP2577488B2 (ja) * 1990-05-18 1997-01-29 株式会社東芝 半導体装置の製造方法
JPH0496223A (ja) * 1990-08-03 1992-03-27 Fujitsu Ltd 半導体装置の製造方法
JP3127454B2 (ja) * 1990-08-08 2001-01-22 ソニー株式会社 シリコン系被エッチング材のエッチング方法
JPH0779102B2 (ja) * 1990-08-23 1995-08-23 富士通株式会社 半導体装置の製造方法
JP3004699B2 (ja) * 1990-09-07 2000-01-31 東京エレクトロン株式会社 プラズマ処理方法
US5242536A (en) * 1990-12-20 1993-09-07 Lsi Logic Corporation Anisotropic polysilicon etching process
US5160407A (en) * 1991-01-02 1992-11-03 Applied Materials, Inc. Low pressure anisotropic etch process for tantalum silicide or titanium silicide layer formed over polysilicon layer deposited on silicon oxide layer on semiconductor wafer
US5167762A (en) * 1991-01-02 1992-12-01 Micron Technology, Inc. Anisotropic etch method
JP2920848B2 (ja) * 1991-03-19 1999-07-19 東京エレクトロン株式会社 シリコン層のエッチング方法
US5560804A (en) * 1991-03-19 1996-10-01 Tokyo Electron Limited Etching method for silicon containing layer
JP3088178B2 (ja) * 1991-04-22 2000-09-18 日本電気株式会社 ポリシリコン膜のエッチング方法
US5314573A (en) * 1991-05-20 1994-05-24 Tokyo Electron Limited Dry etching polysilicon using a bromine-containing gas
JP3179872B2 (ja) * 1991-12-19 2001-06-25 東京エレクトロン株式会社 エッチング方法
JP2903884B2 (ja) * 1992-07-10 1999-06-14 ヤマハ株式会社 半導体装置の製法
US5286337A (en) * 1993-01-25 1994-02-15 North American Philips Corporation Reactive ion etching or indium tin oxide
JP3318801B2 (ja) * 1993-12-29 2002-08-26 ソニー株式会社 ドライエッチング方法
US5670018A (en) * 1995-04-27 1997-09-23 Siemens Aktiengesellschaft Isotropic silicon etch process that is highly selective to tungsten
US5705433A (en) * 1995-08-24 1998-01-06 Applied Materials, Inc. Etching silicon-containing materials by use of silicon-containing compounds
US5550085A (en) * 1995-09-07 1996-08-27 Winbond Electronics Corp. Method for making a buried contact
US5983828A (en) * 1995-10-13 1999-11-16 Mattson Technology, Inc. Apparatus and method for pulsed plasma processing of a semiconductor substrate
US6253704B1 (en) 1995-10-13 2001-07-03 Mattson Technology, Inc. Apparatus and method for pulsed plasma processing of a semiconductor substrate
US6794301B2 (en) 1995-10-13 2004-09-21 Mattson Technology, Inc. Pulsed plasma processing of semiconductor substrates
US6451706B1 (en) * 1996-06-03 2002-09-17 Chartered Semiconductor Manufacturing Ltd. Attenuation of reflecting lights by surface treatment
US5736418A (en) * 1996-06-07 1998-04-07 Lsi Logic Corporation Method for fabricating a field effect transistor using microtrenches to control hot electron effects
US5843226A (en) * 1996-07-16 1998-12-01 Applied Materials, Inc. Etch process for single crystal silicon
GB9616225D0 (en) 1996-08-01 1996-09-11 Surface Tech Sys Ltd Method of surface treatment of semiconductor substrates
DE69725245T2 (de) * 1996-08-01 2004-08-12 Surface Technoloy Systems Plc Verfahren zur Ätzung von Substraten
US5798303A (en) * 1996-09-05 1998-08-25 Micron Technology, Inc. Etching method for use in fabrication of semiconductor devices
US6187685B1 (en) 1997-08-01 2001-02-13 Surface Technology Systems Limited Method and apparatus for etching a substrate
US6083815A (en) * 1998-04-27 2000-07-04 Taiwan Semiconductor Manufacturing Company Method of gate etching with thin gate oxide
US6417013B1 (en) 1999-01-29 2002-07-09 Plasma-Therm, Inc. Morphed processing of semiconductor devices
US6340603B1 (en) * 2000-01-27 2002-01-22 Advanced Micro Devices, Inc. Plasma emission detection during lateral processing of photoresist mask
US6358859B1 (en) * 2000-05-26 2002-03-19 Taiwan Semiconductor Manufacturing Company HBr silicon etching process
US6402301B1 (en) 2000-10-27 2002-06-11 Lexmark International, Inc Ink jet printheads and methods therefor
DE10226603A1 (de) * 2002-06-14 2004-01-08 Infineon Technologies Ag Verfahren zum Strukturieren einer Siliziumschicht sowie dessen Verwendung zur Herstellung einer integrierten Halbleiterschaltung
DE10226604B4 (de) * 2002-06-14 2006-06-01 Infineon Technologies Ag Verfahren zum Strukturieren einer Schicht
US7029958B2 (en) * 2003-11-04 2006-04-18 Advanced Micro Devices, Inc. Self aligned damascene gate
US8034153B2 (en) * 2005-12-22 2011-10-11 Momentive Performances Materials, Inc. Wear resistant low friction coating composition, coated components, and method for coating thereof
KR100780832B1 (ko) * 2006-08-16 2007-11-30 인하대학교 산학협력단 산화아연 물질에 대한 건식 식각 방법
WO2008053008A2 (en) * 2006-10-31 2008-05-08 Interuniversitair Microelektronica Centrum (Imec) Method for manufacturing a micromachined device
JP5537324B2 (ja) * 2010-08-05 2014-07-02 株式会社東芝 半導体装置の製造方法
CN109659222B (zh) 2017-10-10 2020-10-27 联华电子股份有限公司 半导体装置的形成方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5814507B2 (ja) * 1975-07-09 1983-03-19 インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション シリコンを選択的にイオン食刻する方法
US4432132A (en) * 1981-12-07 1984-02-21 Bell Telephone Laboratories, Incorporated Formation of sidewall oxide layers by reactive oxygen ion etching to define submicron features
US4450042A (en) * 1982-07-06 1984-05-22 Texas Instruments Incorporated Plasma etch chemistry for anisotropic etching of silicon
JPS58100684A (ja) * 1982-11-26 1983-06-15 Nippon Telegr & Teleph Corp <Ntt> ドライ・エツチング方法
US4490209B2 (en) * 1983-12-27 2000-12-19 Texas Instruments Inc Plasma etching using hydrogen bromide addition
US4502915B1 (en) * 1984-01-23 1998-11-03 Texas Instruments Inc Two-step plasma process for selective anisotropic etching of polycrystalline silicon without leaving residue
US4702795A (en) * 1985-05-03 1987-10-27 Texas Instruments Incorporated Trench etch process
US4784720A (en) * 1985-05-03 1988-11-15 Texas Instruments Incorporated Trench etch process for a single-wafer RIE dry etch reactor
JPS62202523A (ja) * 1986-02-28 1987-09-07 Nec Corp 半導体装置の製造方法
EP0565212A2 (de) * 1986-12-19 1993-10-13 Applied Materials, Inc. Iodine-Ätzverfahren für Silizium und Silizide
US4778563A (en) * 1987-03-26 1988-10-18 Applied Materials, Inc. Materials and methods for etching tungsten polycides using silicide as a mask

Also Published As

Publication number Publication date
EP0350997A2 (de) 1990-01-17
EP0350997A3 (de) 1990-04-11
KR0185372B1 (ko) 1999-04-15
DE68928826T2 (de) 1999-05-12
US5007982A (en) 1991-04-16
JPH0670989B2 (ja) 1994-09-07
KR900002415A (ko) 1990-02-28
EP0350997B1 (de) 1998-10-07
JPH0286126A (ja) 1990-03-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8328 Change in the person/name/address of the agent

Representative=s name: EISENFUEHR, SPEISER & PARTNER, 10178 BERLIN

8327 Change in the person/name/address of the patent owner

Owner name: NXP B.V., EINDHOVEN, NL