DE69332460D1 - Gebrauchsverfahren von strahlungsempfindlichen Materialien - Google Patents
Gebrauchsverfahren von strahlungsempfindlichen MaterialienInfo
- Publication number
- DE69332460D1 DE69332460D1 DE69332460T DE69332460T DE69332460D1 DE 69332460 D1 DE69332460 D1 DE 69332460D1 DE 69332460 T DE69332460 T DE 69332460T DE 69332460 T DE69332460 T DE 69332460T DE 69332460 D1 DE69332460 D1 DE 69332460D1
- Authority
- DE
- Germany
- Prior art keywords
- radiation sensitive
- sensitive materials
- materials
- radiation
- sensitive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0754—Non-macromolecular compounds containing silicon-to-silicon bonds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/167—Coating processes; Apparatus therefor from the gas phase, by plasma deposition
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Silicon Polymers (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/875,851 US5439780A (en) | 1992-04-29 | 1992-04-29 | Energy sensitive materials and methods for their use |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69332460D1 true DE69332460D1 (de) | 2002-12-12 |
DE69332460T2 DE69332460T2 (de) | 2003-07-10 |
Family
ID=25366471
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69332460T Expired - Lifetime DE69332460T2 (de) | 1992-04-29 | 1993-04-20 | Gebrauchsverfahren von strahlungsempfindlichen Materialien |
Country Status (7)
Country | Link |
---|---|
US (1) | US5439780A (de) |
EP (1) | EP0568235B1 (de) |
JP (1) | JP3371010B2 (de) |
KR (2) | KR100299730B1 (de) |
CA (1) | CA2085698C (de) |
DE (1) | DE69332460T2 (de) |
TW (1) | TW232053B (de) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5635338A (en) * | 1992-04-29 | 1997-06-03 | Lucent Technologies Inc. | Energy sensitive materials and methods for their use |
US6013418A (en) * | 1992-04-29 | 2000-01-11 | Lucent Technologies Inc. | Method for developing images in energy sensitive materials |
US5874367A (en) | 1992-07-04 | 1999-02-23 | Trikon Technologies Limited | Method of treating a semi-conductor wafer |
US5858880A (en) * | 1994-05-14 | 1999-01-12 | Trikon Equipment Limited | Method of treating a semi-conductor wafer |
DE19630705A1 (de) | 1995-08-30 | 1997-03-20 | Deutsche Telekom Ag | Verfahren zur Herstellung von 3-dimensional strukturierten Polymerschichten für die integrierte Optik |
US5925494A (en) * | 1996-02-16 | 1999-07-20 | Massachusetts Institute Of Technology | Vapor deposition of polymer films for photolithography |
US6020447A (en) * | 1996-03-29 | 2000-02-01 | Massachusetts Institute Of Technology | Sonichemical synthesis of silicon carbide precursors and methods for preparation thereof |
KR100440233B1 (ko) | 1996-08-24 | 2004-07-15 | 트리콘 이큅먼츠 리미티드 | 반도체 기판 처리방법 |
US5885751A (en) * | 1996-11-08 | 1999-03-23 | Applied Materials, Inc. | Method and apparatus for depositing deep UV photoresist films |
JP3411559B2 (ja) * | 1997-07-28 | 2003-06-03 | マサチューセッツ・インスティチュート・オブ・テクノロジー | シリコーン膜の熱分解化学蒸着法 |
US6204168B1 (en) | 1998-02-02 | 2001-03-20 | Applied Materials, Inc. | Damascene structure fabricated using a layer of silicon-based photoresist material |
EP0942330A1 (de) | 1998-03-11 | 1999-09-15 | Applied Materials, Inc. | Verfahren zur Abscheidung und zum Entwickeln eines mittels Plasmapolymerisation erzeugten Organosilikon-Resistfilmes |
US6127263A (en) | 1998-07-10 | 2000-10-03 | Applied Materials, Inc. | Misalignment tolerant techniques for dual damascene fabrication |
US6245662B1 (en) | 1998-07-23 | 2001-06-12 | Applied Materials, Inc. | Method of producing an interconnect structure for an integrated circuit |
TW437040B (en) * | 1998-08-12 | 2001-05-28 | Applied Materials Inc | Interconnect line formed by dual damascene using dielectric layers having dissimilar etching characteristics |
US20020039809A1 (en) * | 1998-09-03 | 2002-04-04 | Bradley J. Howard | Process for using photo-definable layers in the manufacture of semiconductor devices and resulting structures of same |
EP1033744A3 (de) * | 1999-02-26 | 2009-07-15 | Applied Materials, Inc. | Verbessertes trocken-photolithographisches Verfahren zur Bestrahlung im tiefen UV-Bereich |
US6509138B2 (en) | 2000-01-12 | 2003-01-21 | Semiconductor Research Corporation | Solventless, resistless direct dielectric patterning |
US6420189B1 (en) | 2001-04-27 | 2002-07-16 | Advanced Micro Devices, Inc. | Superconducting damascene interconnected for integrated circuit |
US6482656B1 (en) | 2001-06-04 | 2002-11-19 | Advanced Micro Devices, Inc. | Method of electrochemical formation of high Tc superconducting damascene interconnect for integrated circuit |
US6495443B1 (en) | 2001-06-05 | 2002-12-17 | Advanced Micro Devices, Inc. | Method of re-working copper damascene wafers |
JP2003031639A (ja) * | 2001-07-17 | 2003-01-31 | Canon Inc | 基板処理装置、基板の搬送方法及び露光装置 |
JP2003045947A (ja) * | 2001-07-27 | 2003-02-14 | Canon Inc | 基板処理装置及び露光装置 |
US6989428B1 (en) * | 2002-03-22 | 2006-01-24 | University Of Massachusetts | Methods of preparing polysilynes |
WO2003082763A2 (en) * | 2002-03-25 | 2003-10-09 | University Of Massachusetts | High molecular weight polymers |
US6740579B2 (en) * | 2002-06-18 | 2004-05-25 | Intel Corporation | Method of making a semiconductor device that includes a dual damascene interconnect |
KR101155841B1 (ko) * | 2003-03-03 | 2012-06-20 | 램 리써치 코포레이션 | 이중 도핑된 게이트 애플리케이션에서 프로파일 제어 및n/p 로딩을 개선하는 방법 |
US7141505B2 (en) * | 2003-06-27 | 2006-11-28 | Lam Research Corporation | Method for bilayer resist plasma etch |
US7271983B2 (en) * | 2004-09-16 | 2007-09-18 | Quantum Corporation | Magnetic head with mini-outriggers and method of manufacture |
US7622246B2 (en) * | 2006-09-22 | 2009-11-24 | Massachusetts Institute Of Technology | Contrast enhancing layers |
JP5878281B2 (ja) | 2006-11-03 | 2016-03-08 | ハーキュリーズ・インコーポレーテッドHercules Incorporated | グリオキサールで処理した分散性カチオン性ポリガラクトマンナンポリマー |
US8158338B2 (en) | 2008-07-08 | 2012-04-17 | Massachusetts Institute Of Technology | Resist sensitizer |
WO2010005892A1 (en) * | 2008-07-08 | 2010-01-14 | Massachusetts Institute Of Technology | Resist composition and lithographic process using said composition |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55129345A (en) * | 1979-03-29 | 1980-10-07 | Ulvac Corp | Electron beam plate making method by vapor phase film formation and vapor phase development |
JPS5799639A (en) * | 1980-12-12 | 1982-06-21 | Fujitsu Ltd | Treatment of negative type resist |
JPS57202537A (en) * | 1981-06-09 | 1982-12-11 | Fujitsu Ltd | Resist composition for dry development |
US4476216A (en) * | 1981-08-03 | 1984-10-09 | Amdahl Corporation | Method for high resolution lithography |
US4357369A (en) * | 1981-11-10 | 1982-11-02 | Rca Corporation | Method of plasma etching a substrate |
US4459338A (en) * | 1982-03-19 | 1984-07-10 | The United States Of America As Represented By The United States Department Of Energy | Method of deposition of silicon carbide layers on substrates and product |
JPS60114575A (ja) * | 1983-11-28 | 1985-06-21 | Tokyo Ohka Kogyo Co Ltd | 乾式パタ−ン形成方法 |
US4537942A (en) * | 1984-02-10 | 1985-08-27 | Minnesota Mining And Manufacturing Company | Polyhydridosilanes and their conversion to pyropolymers |
US4801468A (en) * | 1985-02-25 | 1989-01-31 | Canon Kabushiki Kaisha | Process for forming deposited film |
JPS62160981A (ja) * | 1986-01-08 | 1987-07-16 | Mitsubishi Heavy Ind Ltd | 石油タンカ−の改造法 |
US4719273A (en) * | 1985-09-04 | 1988-01-12 | Massachusetts Institute Of Technology | Method for forming new preceramic polymers containing silicon |
US4781942A (en) * | 1985-12-19 | 1988-11-01 | Hughes Aircraft Company | Process for the photochemical vapor deposition of siloxane polymers |
DE3772267D1 (de) * | 1986-06-12 | 1991-09-26 | Matsushita Electric Ind Co Ltd | Bilderzeugungsverfahren. |
US4720532A (en) * | 1986-08-22 | 1988-01-19 | Massachusetts Institute Of Technology | Organopolysilazane precursors to silicon nitride-rich mixed SiC/Si3 N4 |
EP0283311B1 (de) * | 1987-03-18 | 2001-08-01 | Kabushiki Kaisha Toshiba | Verfahren zur Herstellung von Dünnschichten |
WO1989007285A1 (en) * | 1988-01-29 | 1989-08-10 | Massachusetts Institute Of Technology | Integrated circuit micro-fabrication using dry lithographic processes |
CA1334911C (en) * | 1989-02-15 | 1995-03-28 | David M. Dobuzinsky | Process for the vapor deposition of polysilanes |
US4921321A (en) * | 1989-04-27 | 1990-05-01 | American Telephone And Telegraph Company | Silicon network polymers |
US5126006A (en) * | 1990-10-30 | 1992-06-30 | International Business Machines Corp. | Plural level chip masking |
-
1992
- 1992-04-29 US US07/875,851 patent/US5439780A/en not_active Expired - Lifetime
- 1992-10-29 TW TW081108635A patent/TW232053B/zh active
- 1992-12-17 CA CA002085698A patent/CA2085698C/en not_active Expired - Lifetime
-
1993
- 1993-04-20 DE DE69332460T patent/DE69332460T2/de not_active Expired - Lifetime
- 1993-04-20 EP EP93303020A patent/EP0568235B1/de not_active Expired - Lifetime
- 1993-04-27 KR KR1019930007063A patent/KR100299730B1/ko not_active IP Right Cessation
- 1993-04-28 JP JP10163793A patent/JP3371010B2/ja not_active Expired - Lifetime
-
2000
- 2000-10-12 KR KR1020000059939A patent/KR100330448B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CA2085698A1 (en) | 1993-10-30 |
EP0568235A1 (de) | 1993-11-03 |
JP3371010B2 (ja) | 2003-01-27 |
KR100299730B1 (ko) | 2001-11-22 |
EP0568235B1 (de) | 2002-11-06 |
US5439780A (en) | 1995-08-08 |
CA2085698C (en) | 1999-06-08 |
KR100330448B1 (ko) | 2002-04-03 |
DE69332460T2 (de) | 2003-07-10 |
JPH0683074A (ja) | 1994-03-25 |
KR930022149A (ko) | 1993-11-23 |
TW232053B (de) | 1994-10-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |