GB2068286B - Reactive sputter etching of silicon - Google Patents

Reactive sputter etching of silicon

Info

Publication number
GB2068286B
GB2068286B GB8103292A GB8103292A GB2068286B GB 2068286 B GB2068286 B GB 2068286B GB 8103292 A GB8103292 A GB 8103292A GB 8103292 A GB8103292 A GB 8103292A GB 2068286 B GB2068286 B GB 2068286B
Authority
GB
United Kingdom
Prior art keywords
silicon
sputter etching
reactive sputter
reactive
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8103292A
Other versions
GB2068286A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB2068286A publication Critical patent/GB2068286A/en
Application granted granted Critical
Publication of GB2068286B publication Critical patent/GB2068286B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
    • C04B41/5338—Etching
    • C04B41/5346—Dry etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
GB8103292A 1980-02-06 1981-02-03 Reactive sputter etching of silicon Expired GB2068286B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11910380A 1980-02-06 1980-02-06

Publications (2)

Publication Number Publication Date
GB2068286A GB2068286A (en) 1981-08-12
GB2068286B true GB2068286B (en) 1984-07-11

Family

ID=22382565

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8103292A Expired GB2068286B (en) 1980-02-06 1981-02-03 Reactive sputter etching of silicon

Country Status (6)

Country Link
JP (1) JPS56130928A (en)
CA (1) CA1148895A (en)
DE (1) DE3104024A1 (en)
FR (1) FR2478421A1 (en)
GB (1) GB2068286B (en)
NL (1) NL190592C (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3606959A1 (en) * 1986-03-04 1987-09-10 Leybold Heraeus Gmbh & Co Kg DEVICE FOR PLASMA TREATMENT OF SUBSTRATES IN A PLASMA DISCHARGE EXCITED BY HIGH FREQUENCY
JPH0831439B2 (en) * 1986-03-05 1996-03-27 株式会社東芝 Reactive ion etching method
DE3935189A1 (en) * 1989-10-23 1991-05-08 Leybold Ag Ionic etching substrates of silicon di:oxide coated - with poly-silicon or silicide layers-using etching gas of chlorine, silicon chloride and nitrogen
KR930008580B1 (en) * 1990-06-22 1993-09-09 현대전자산업 주식회사 Capacitor cell having a granulated layer and manufacturing method thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4104086A (en) * 1977-08-15 1978-08-01 International Business Machines Corporation Method for forming isolated regions of silicon utilizing reactive ion etching
US4226665A (en) * 1978-07-31 1980-10-07 Bell Telephone Laboratories, Incorporated Device fabrication by plasma etching

Also Published As

Publication number Publication date
DE3104024A1 (en) 1981-12-17
JPS56130928A (en) 1981-10-14
GB2068286A (en) 1981-08-12
FR2478421A1 (en) 1981-09-18
NL190592B (en) 1993-12-01
DE3104024C2 (en) 1988-08-18
NL190592C (en) 1994-05-02
CA1148895A (en) 1983-06-28
NL8100560A (en) 1981-09-01
FR2478421B1 (en) 1983-12-23

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Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Effective date: 20010202