DE68925163D1 - Treiberschaltung für Transistor mit isoliertem Gate; und deren Verwendung in einem Schalterkreis, einer Stromschalteinrichtung, und einem Induktionsmotorsystem - Google Patents

Treiberschaltung für Transistor mit isoliertem Gate; und deren Verwendung in einem Schalterkreis, einer Stromschalteinrichtung, und einem Induktionsmotorsystem

Info

Publication number
DE68925163D1
DE68925163D1 DE68925163T DE68925163T DE68925163D1 DE 68925163 D1 DE68925163 D1 DE 68925163D1 DE 68925163 T DE68925163 T DE 68925163T DE 68925163 T DE68925163 T DE 68925163T DE 68925163 D1 DE68925163 D1 DE 68925163D1
Authority
DE
Germany
Prior art keywords
circuit
induction motor
insulated gate
gate transistor
motor system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68925163T
Other languages
English (en)
Other versions
DE68925163T2 (de
Inventor
Shin Kimura
Norikazu Tokunaga
Nobuyoshi Muto
Satoshi Ibori
Syuji Musha
Yasuo Matsuda
Yutaka Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP63199888A external-priority patent/JP2747911B2/ja
Priority claimed from JP1027146A external-priority patent/JPH02262826A/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE68925163D1 publication Critical patent/DE68925163D1/de
Application granted granted Critical
Publication of DE68925163T2 publication Critical patent/DE68925163T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
    • H02P27/00—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage
    • H02P27/04—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage
    • H02P27/06—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using dc to ac converters or inverters
    • H02P27/08—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using dc to ac converters or inverters with pulse width modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Conversion In General (AREA)
  • Inverter Devices (AREA)
  • Electronic Switches (AREA)
  • Control Of Ac Motors In General (AREA)
DE68925163T 1988-08-12 1989-07-31 Treiberschaltung für Transistor mit isoliertem Gate; und deren Verwendung in einem Schalterkreis, einer Stromschalteinrichtung, und einem Induktionsmotorsystem Expired - Fee Related DE68925163T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63199888A JP2747911B2 (ja) 1988-08-12 1988-08-12 静電誘導形自己消弧素子の駆動回路及び静電誘導形自己消弧素子を有するインバータ装置
JP1027146A JPH02262826A (ja) 1989-02-06 1989-02-06 静電誘導形自己消弧素子の過電流検出方法および装置、それを用いた駆動回路とインバータ装置

Publications (2)

Publication Number Publication Date
DE68925163D1 true DE68925163D1 (de) 1996-02-01
DE68925163T2 DE68925163T2 (de) 1996-08-08

Family

ID=26365048

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68925163T Expired - Fee Related DE68925163T2 (de) 1988-08-12 1989-07-31 Treiberschaltung für Transistor mit isoliertem Gate; und deren Verwendung in einem Schalterkreis, einer Stromschalteinrichtung, und einem Induktionsmotorsystem

Country Status (4)

Country Link
US (1) US5210479A (de)
EP (1) EP0354435B1 (de)
KR (1) KR0144679B1 (de)
DE (1) DE68925163T2 (de)

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US6104149A (en) * 1997-02-28 2000-08-15 International Rectifier Corp. Circuit and method for improving short-circuit capability of IGBTs
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JP2005006381A (ja) * 2003-06-10 2005-01-06 Hitachi Ltd スイッチング素子の駆動回路
JP4223331B2 (ja) * 2003-06-13 2009-02-12 株式会社日立製作所 電力制御用半導体素子の保護装置及びそれを備えた電力変換装置
JP4231769B2 (ja) * 2003-11-14 2009-03-04 株式会社日立産機システム フィルタ装置、及びそのフィルタ装置が接続される電力変換装置
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JP4658587B2 (ja) * 2004-12-22 2011-03-23 ローム株式会社 モータ駆動装置
JP2007028278A (ja) * 2005-07-19 2007-02-01 Denso Corp 駆動回路
DE102005045099B4 (de) * 2005-09-21 2011-05-05 Infineon Technologies Ag Entsättigungsschaltung mit einem IGBT
JP5226183B2 (ja) * 2006-01-10 2013-07-03 東芝三菱電機産業システム株式会社 多レベル電力変換装置
US7760005B2 (en) * 2007-03-29 2010-07-20 General Electric Company Power electronic module including desaturation detection diode
US8503146B1 (en) * 2007-10-16 2013-08-06 Fairchild Semiconductor Corporation Gate driver with short-circuit protection
CN103997276B (zh) * 2009-12-18 2018-03-27 株式会社电装 用于电功率转换电路的驱动器件
JP5539587B2 (ja) * 2011-04-04 2014-07-02 ルネサスエレクトロニクス株式会社 電力用半導体装置
US8760218B2 (en) 2012-05-07 2014-06-24 General Electric Company System and method for operating an electric power converter
JP5776721B2 (ja) 2013-04-15 2015-09-09 株式会社デンソー 駆動対象スイッチング素子の駆動回路
CN103326547A (zh) * 2013-06-18 2013-09-25 欧瑞传动电气股份有限公司 一种带保护延时的igbt驱动电路
CN103312131B (zh) * 2013-07-03 2016-05-18 华东交通大学 一种高频直流变换器开关管关断速度实时调整方法
US9887537B2 (en) 2015-06-30 2018-02-06 Microsoft Technology Licensing, Llc Analog limit on digitally set pulse widths
CN107204760A (zh) * 2016-03-17 2017-09-26 中车株洲电力机车研究所有限公司 一种igbt驱动装置及系统
CN106849923B (zh) * 2016-12-23 2019-06-04 电子科技大学 一种igbt驱动电路
CN109655703B (zh) * 2018-12-30 2022-01-28 北京天诚同创电气有限公司 并联功率模块的自检方法、装置、设备及存储介质
EP3713087A1 (de) * 2019-03-18 2020-09-23 Siemens Aktiengesellschaft Schutz eines halbleiterschalters
US20230261654A1 (en) * 2020-09-07 2023-08-17 Mitsubishi Electric Corporation Drive device to drive semiconductor element, semiconductor device, and power conversion device

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Also Published As

Publication number Publication date
KR900004074A (ko) 1990-03-27
EP0354435B1 (de) 1995-12-20
DE68925163T2 (de) 1996-08-08
KR0144679B1 (ko) 1998-08-17
US5210479A (en) 1993-05-11
EP0354435A2 (de) 1990-02-14
EP0354435A3 (de) 1991-11-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee