DE68910190T3 - Verfahren zur Herstellung von Sputtertargets aus Wolfram-Titan. - Google Patents
Verfahren zur Herstellung von Sputtertargets aus Wolfram-Titan.Info
- Publication number
- DE68910190T3 DE68910190T3 DE68910190T DE68910190T DE68910190T3 DE 68910190 T3 DE68910190 T3 DE 68910190T3 DE 68910190 T DE68910190 T DE 68910190T DE 68910190 T DE68910190 T DE 68910190T DE 68910190 T3 DE68910190 T3 DE 68910190T3
- Authority
- DE
- Germany
- Prior art keywords
- powder
- tungsten
- die
- compact
- titanium hydride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/045—Alloys based on refractory metals
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Vapour Deposition (AREA)
- Powder Metallurgy (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/200,344 US4838935A (en) | 1988-05-31 | 1988-05-31 | Method for making tungsten-titanium sputtering targets and product |
Publications (3)
Publication Number | Publication Date |
---|---|
DE68910190D1 DE68910190D1 (de) | 1993-12-02 |
DE68910190T2 DE68910190T2 (de) | 1994-03-10 |
DE68910190T3 true DE68910190T3 (de) | 2000-03-30 |
Family
ID=22741329
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68910190T Expired - Fee Related DE68910190T3 (de) | 1988-05-31 | 1989-05-31 | Verfahren zur Herstellung von Sputtertargets aus Wolfram-Titan. |
Country Status (7)
Country | Link |
---|---|
US (1) | US4838935A (de) |
EP (1) | EP0345045B2 (de) |
JP (1) | JP3103359B2 (de) |
KR (1) | KR960011244B1 (de) |
AT (1) | ATE96474T1 (de) |
CA (1) | CA1325899C (de) |
DE (1) | DE68910190T3 (de) |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5306569A (en) * | 1990-06-15 | 1994-04-26 | Hitachi Metals, Ltd. | Titanium-tungsten target material and manufacturing method thereof |
US5160534A (en) * | 1990-06-15 | 1992-11-03 | Hitachi Metals Ltd. | Titanium-tungsten target material for sputtering and manufacturing method therefor |
US5298338A (en) * | 1990-06-15 | 1994-03-29 | Hitachi Metals, Ltd. | Titanium-tungsten target material and manufacturing method thereof |
US5234487A (en) * | 1991-04-15 | 1993-08-10 | Tosoh Smd, Inc. | Method of producing tungsten-titanium sputter targets and targets produced thereby |
JPH05295531A (ja) * | 1992-04-21 | 1993-11-09 | Toshiba Corp | Ti−W系スパッタリングターゲットおよびその製造方法 |
US5418003A (en) * | 1993-09-10 | 1995-05-23 | General Electric Company | Vapor deposition of ceramic materials |
US5397050A (en) * | 1993-10-27 | 1995-03-14 | Tosoh Smd, Inc. | Method of bonding tungsten titanium sputter targets to titanium plates and target assemblies produced thereby |
US5532513A (en) * | 1994-07-08 | 1996-07-02 | Johnson Matthey Electronics, Inc. | Metal-ceramic composite lid |
JP2984783B2 (ja) * | 1995-03-13 | 1999-11-29 | 株式会社住友シチックス尼崎 | スパッタリング用チタンターゲットおよびその製造方法 |
US5896553A (en) * | 1996-04-10 | 1999-04-20 | Sony Corporation | Single phase tungsten-titanium sputter targets and method of producing same |
US5863398A (en) * | 1996-10-11 | 1999-01-26 | Johnson Matthey Electonics, Inc. | Hot pressed and sintered sputtering target assemblies and method for making same |
US6274015B1 (en) | 1996-12-13 | 2001-08-14 | Honeywell International, Inc. | Diffusion bonded sputtering target assembly with precipitation hardened backing plate and method of making same |
US5803342A (en) * | 1996-12-26 | 1998-09-08 | Johnson Matthey Electronics, Inc. | Method of making high purity copper sputtering targets |
KR20010005546A (ko) | 1997-03-19 | 2001-01-15 | 존슨매테이일렉트로닉스, 인코퍼레이티드 | 후면에 확산 니켈 플레이트된 타겟과 그의 생성방법 |
US5942148A (en) * | 1997-12-24 | 1999-08-24 | Preston; Kenneth G. | Nitride compacts |
US6110320A (en) * | 1998-05-08 | 2000-08-29 | E.I. Du Pont De Nemours And Company | Process for coating a solution onto a substrate |
US6451185B2 (en) | 1998-08-12 | 2002-09-17 | Honeywell International Inc. | Diffusion bonded sputtering target assembly with precipitation hardened backing plate and method of making same |
US6071389A (en) * | 1998-08-21 | 2000-06-06 | Tosoh Smd, Inc. | Diffusion bonded sputter target assembly and method of making |
US6328927B1 (en) * | 1998-12-24 | 2001-12-11 | Praxair Technology, Inc. | Method of making high-density, high-purity tungsten sputter targets |
US6165413A (en) * | 1999-07-08 | 2000-12-26 | Praxair S.T. Technology, Inc. | Method of making high density sputtering targets |
US6521173B2 (en) * | 1999-08-19 | 2003-02-18 | H.C. Starck, Inc. | Low oxygen refractory metal powder for powder metallurgy |
US6475428B1 (en) * | 2001-04-21 | 2002-11-05 | Joseph T. Fraval | Method of producing titanium powder |
US20030211001A1 (en) * | 2002-05-13 | 2003-11-13 | Advanced Materials Products, Inc. | Manufacture of near-net shape titanium alloy articles from metal powders by sintering at variable pressure |
EP1556902A4 (de) * | 2002-09-30 | 2009-07-29 | Miasole | Herstellungsvorrichtung und verfahren zur produktion von dünnfilmsolarzellen in grossem massstab |
TWI390062B (zh) * | 2004-03-05 | 2013-03-21 | Tosoh Corp | 圓柱形濺射標靶,陶瓷燒結體,以及製造燒結體的方法 |
US20070243095A1 (en) * | 2004-06-15 | 2007-10-18 | Tosoh Smd, Inc. | High Purity Target Manufacturing Methods |
EP1773729B1 (de) | 2004-07-12 | 2007-11-07 | Cardinal CG Company | Wartungsarme beschichtungen |
CN101180557B (zh) * | 2005-03-29 | 2013-03-13 | 京瓷株式会社 | 发光装置以及照明装置 |
CN101466649B (zh) | 2006-04-11 | 2013-12-11 | 卡迪奈尔镀膜玻璃公司 | 具有低维护性能的光催化涂层 |
US20080011599A1 (en) | 2006-07-12 | 2008-01-17 | Brabender Dennis M | Sputtering apparatus including novel target mounting and/or control |
US7993577B2 (en) * | 2007-06-11 | 2011-08-09 | Advance Materials Products, Inc. | Cost-effective titanium alloy powder compositions and method for manufacturing flat or shaped articles from these powders |
US8920712B2 (en) | 2007-06-11 | 2014-12-30 | Advanced Materials Products, Inc. | Manufacture of near-net shape titanium alloy articles from metal powders by sintering with presence of atomic hydrogen |
KR101563197B1 (ko) | 2007-09-14 | 2015-10-26 | 카디날 씨지 컴퍼니 | 관리 용이한 코팅 및 이의 제조방법 |
US20100178525A1 (en) * | 2009-01-12 | 2010-07-15 | Scott Campbell | Method for making composite sputtering targets and the tartets made in accordance with the method |
KR101291822B1 (ko) | 2010-07-30 | 2013-07-31 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | 스퍼터링 타깃 및/또는 코일 그리고 이들의 제조 방법 |
CN102002605A (zh) * | 2010-12-06 | 2011-04-06 | 西安瑞福莱钨钼有限公司 | 溅射靶材用钨钛合金板的制备方法 |
US9816157B2 (en) | 2011-04-26 | 2017-11-14 | University Of Utah Research Foundation | Powder metallurgy methods for the production of fine and ultrafine grain Ti and Ti alloys |
CN105568236B (zh) * | 2016-03-14 | 2018-01-26 | 洛阳高新四丰电子材料有限公司 | 一种高纯、高致密、大尺寸钼钛合金溅射靶材的制备方法 |
CN105986160A (zh) * | 2016-06-24 | 2016-10-05 | 贵研铂业股份有限公司 | 一种制备大尺寸高纯钨钛合金靶材的方法 |
US10604442B2 (en) | 2016-11-17 | 2020-03-31 | Cardinal Cg Company | Static-dissipative coating technology |
JP7205213B2 (ja) * | 2018-03-27 | 2023-01-17 | 日立金属株式会社 | TiW合金ターゲットおよびその製造方法 |
CN115551664A (zh) * | 2020-05-29 | 2022-12-30 | 欧瑞康美科(美国)公司 | 用于制造钎焊合金粉末的hdh (氢化-脱氢化)法 |
CN112225565B (zh) * | 2020-10-14 | 2023-01-03 | 宁波江丰电子材料股份有限公司 | 一种钨硅靶坯的制备方法 |
CN114619038B (zh) * | 2022-01-31 | 2023-04-25 | 北京科技大学 | 一种高纯度的钨钛合金靶材的制备方法 |
CN115725944A (zh) * | 2022-12-05 | 2023-03-03 | 基迈克材料科技(苏州)有限公司 | 一种钨钛溅射靶材的制备方法 |
CN115922145A (zh) * | 2022-12-12 | 2023-04-07 | 山西阳煤化工机械(集团)有限公司 | CBN增强AgCuZr活性钎料激光钎焊层及其制备方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4331476A (en) * | 1980-01-31 | 1982-05-25 | Tektronix, Inc. | Sputtering targets with low mobile ion contamination |
JPS6066425A (ja) * | 1983-09-22 | 1985-04-16 | Nippon Telegr & Teleph Corp <Ntt> | Lsi電極用の高純度モリブデンタ−ゲツトならびに高純度モリブデンシリサイドタ−ゲツトおよびその製造方法 |
US4663120A (en) * | 1985-04-15 | 1987-05-05 | Gte Products Corporation | Refractory metal silicide sputtering target |
US4750932A (en) * | 1985-04-15 | 1988-06-14 | Gte Products Corporation | Refractory metal silicide sputtering target |
JPS62137710A (ja) * | 1985-12-10 | 1987-06-20 | Victor Co Of Japan Ltd | 電極付き磁気ヘツド |
AT383758B (de) * | 1985-12-23 | 1987-08-25 | Plansee Metallwerk | Verfahren zur herstellung eines sputter-targets |
-
1988
- 1988-05-31 US US07/200,344 patent/US4838935A/en not_active Expired - Lifetime
- 1988-09-28 CA CA000578722A patent/CA1325899C/en not_active Expired - Fee Related
-
1989
- 1989-05-30 KR KR1019890007254A patent/KR960011244B1/ko not_active IP Right Cessation
- 1989-05-31 EP EP89305490A patent/EP0345045B2/de not_active Expired - Lifetime
- 1989-05-31 AT AT89305490T patent/ATE96474T1/de active
- 1989-05-31 JP JP01138995A patent/JP3103359B2/ja not_active Expired - Fee Related
- 1989-05-31 DE DE68910190T patent/DE68910190T3/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE68910190T2 (de) | 1994-03-10 |
JP3103359B2 (ja) | 2000-10-30 |
US4838935A (en) | 1989-06-13 |
KR890017387A (ko) | 1989-12-15 |
JPH0277575A (ja) | 1990-03-16 |
EP0345045B1 (de) | 1993-10-27 |
EP0345045A1 (de) | 1989-12-06 |
ATE96474T1 (de) | 1993-11-15 |
KR960011244B1 (ko) | 1996-08-21 |
CA1325899C (en) | 1994-01-11 |
DE68910190D1 (de) | 1993-12-02 |
EP0345045B2 (de) | 2000-01-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8363 | Opposition against the patent | ||
8366 | Restricted maintained after opposition proceedings | ||
8339 | Ceased/non-payment of the annual fee |