ATE96474T1 - Verfahren zur herstellung von sputtertargets aus wolfram-titan. - Google Patents

Verfahren zur herstellung von sputtertargets aus wolfram-titan.

Info

Publication number
ATE96474T1
ATE96474T1 AT89305490T AT89305490T ATE96474T1 AT E96474 T1 ATE96474 T1 AT E96474T1 AT 89305490 T AT89305490 T AT 89305490T AT 89305490 T AT89305490 T AT 89305490T AT E96474 T1 ATE96474 T1 AT E96474T1
Authority
AT
Austria
Prior art keywords
powder
tungsten
die
compact
titanium hydride
Prior art date
Application number
AT89305490T
Other languages
English (en)
Inventor
John A Dunlop
Hans Rensing
Original Assignee
Johnson Matthey Plc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=22741329&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE96474(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Johnson Matthey Plc filed Critical Johnson Matthey Plc
Application granted granted Critical
Publication of ATE96474T1 publication Critical patent/ATE96474T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/045—Alloys based on refractory metals

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Powder Metallurgy (AREA)
AT89305490T 1988-05-31 1989-05-31 Verfahren zur herstellung von sputtertargets aus wolfram-titan. ATE96474T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/200,344 US4838935A (en) 1988-05-31 1988-05-31 Method for making tungsten-titanium sputtering targets and product
EP89305490A EP0345045B2 (de) 1988-05-31 1989-05-31 Verfahren zur Herstellung von Sputtertargets aus Wolfram-Titan

Publications (1)

Publication Number Publication Date
ATE96474T1 true ATE96474T1 (de) 1993-11-15

Family

ID=22741329

Family Applications (1)

Application Number Title Priority Date Filing Date
AT89305490T ATE96474T1 (de) 1988-05-31 1989-05-31 Verfahren zur herstellung von sputtertargets aus wolfram-titan.

Country Status (7)

Country Link
US (1) US4838935A (de)
EP (1) EP0345045B2 (de)
JP (1) JP3103359B2 (de)
KR (1) KR960011244B1 (de)
AT (1) ATE96474T1 (de)
CA (1) CA1325899C (de)
DE (1) DE68910190T3 (de)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5160534A (en) * 1990-06-15 1992-11-03 Hitachi Metals Ltd. Titanium-tungsten target material for sputtering and manufacturing method therefor
US5306569A (en) * 1990-06-15 1994-04-26 Hitachi Metals, Ltd. Titanium-tungsten target material and manufacturing method thereof
US5298338A (en) * 1990-06-15 1994-03-29 Hitachi Metals, Ltd. Titanium-tungsten target material and manufacturing method thereof
US5234487A (en) * 1991-04-15 1993-08-10 Tosoh Smd, Inc. Method of producing tungsten-titanium sputter targets and targets produced thereby
JPH05295531A (ja) * 1992-04-21 1993-11-09 Toshiba Corp Ｔｉ−Ｗ系スパッタリングターゲットおよびその製造方法
US5418003A (en) * 1993-09-10 1995-05-23 General Electric Company Vapor deposition of ceramic materials
US5397050A (en) * 1993-10-27 1995-03-14 Tosoh Smd, Inc. Method of bonding tungsten titanium sputter targets to titanium plates and target assemblies produced thereby
US5532513A (en) * 1994-07-08 1996-07-02 Johnson Matthey Electronics, Inc. Metal-ceramic composite lid
JP2984783B2 (ja) * 1995-03-13 1999-11-29 株式会社住友シチックス尼崎 スパッタリング用チタンターゲットおよびその製造方法
US5896553A (en) * 1996-04-10 1999-04-20 Sony Corporation Single phase tungsten-titanium sputter targets and method of producing same
US5863398A (en) * 1996-10-11 1999-01-26 Johnson Matthey Electonics, Inc. Hot pressed and sintered sputtering target assemblies and method for making same
US6274015B1 (en) 1996-12-13 2001-08-14 Honeywell International, Inc. Diffusion bonded sputtering target assembly with precipitation hardened backing plate and method of making same
US5803342A (en) * 1996-12-26 1998-09-08 Johnson Matthey Electronics, Inc. Method of making high purity copper sputtering targets
KR20010005546A (ko) 1997-03-19 2001-01-15 존슨매테이일렉트로닉스, 인코퍼레이티드 후면에 확산 니켈 플레이트된 타겟과 그의 생성방법
US5942148A (en) * 1997-12-24 1999-08-24 Preston; Kenneth G. Nitride compacts
US6110320A (en) * 1998-05-08 2000-08-29 E.I. Du Pont De Nemours And Company Process for coating a solution onto a substrate
US6451185B2 (en) 1998-08-12 2002-09-17 Honeywell International Inc. Diffusion bonded sputtering target assembly with precipitation hardened backing plate and method of making same
US6071389A (en) * 1998-08-21 2000-06-06 Tosoh Smd, Inc. Diffusion bonded sputter target assembly and method of making
US6328927B1 (en) * 1998-12-24 2001-12-11 Praxair Technology, Inc. Method of making high-density, high-purity tungsten sputter targets
US6165413A (en) * 1999-07-08 2000-12-26 Praxair S.T. Technology, Inc. Method of making high density sputtering targets
US6521173B2 (en) * 1999-08-19 2003-02-18 H.C. Starck, Inc. Low oxygen refractory metal powder for powder metallurgy
US6475428B1 (en) * 2001-04-21 2002-11-05 Joseph T. Fraval Method of producing titanium powder
US20030211001A1 (en) * 2002-05-13 2003-11-13 Advanced Materials Products, Inc. Manufacture of near-net shape titanium alloy articles from metal powders by sintering at variable pressure
US6974976B2 (en) * 2002-09-30 2005-12-13 Miasole Thin-film solar cells
TWI390062B (zh) * 2004-03-05 2013-03-21 Tosoh Corp 圓柱形濺射標靶，陶瓷燒結體，以及製造燒結體的方法
US20070243095A1 (en) * 2004-06-15 2007-10-18 Tosoh Smd, Inc. High Purity Target Manufacturing Methods
EP1765740B1 (de) 2004-07-12 2007-11-07 Cardinal CG Company Wartungsarme beschichtungen
WO2006104061A1 (ja) * 2005-03-29 2006-10-05 Kyocera Corporation 反射部材、これを用いた発光装置および照明装置
WO2007121211A2 (en) 2006-04-11 2007-10-25 Cardinal Cg Company Photocatalytic coatings having improved low-maintenance properties
US20080011599A1 (en) 2006-07-12 2008-01-17 Brabender Dennis M Sputtering apparatus including novel target mounting and/or control
US7993577B2 (en) * 2007-06-11 2011-08-09 Advance Materials Products, Inc. Cost-effective titanium alloy powder compositions and method for manufacturing flat or shaped articles from these powders
US8920712B2 (en) 2007-06-11 2014-12-30 Advanced Materials Products, Inc. Manufacture of near-net shape titanium alloy articles from metal powders by sintering with presence of atomic hydrogen
CA2664368A1 (en) * 2007-09-14 2009-03-19 Cardinal Cg Company Low-maintenance coating technology
US20100178525A1 (en) * 2009-01-12 2010-07-15 Scott Campbell Method for making composite sputtering targets and the tartets made in accordance with the method
WO2012014921A1 (ja) 2010-07-30 2012-02-02 Jx日鉱日石金属株式会社 スパッタリングターゲット及び／又はコイル並びにこれらの製造方法
CN102002605A (zh) * 2010-12-06 2011-04-06 西安瑞福莱钨钼有限公司 溅射靶材用钨钛合金板的制备方法
US9816157B2 (en) 2011-04-26 2017-11-14 University Of Utah Research Foundation Powder metallurgy methods for the production of fine and ultrafine grain Ti and Ti alloys
CN105568236B (zh) * 2016-03-14 2018-01-26 洛阳高新四丰电子材料有限公司 一种高纯、高致密、大尺寸钼钛合金溅射靶材的制备方法
CN105986160A (zh) * 2016-06-24 2016-10-05 贵研铂业股份有限公司 一种制备大尺寸高纯钨钛合金靶材的方法
WO2018093985A1 (en) 2016-11-17 2018-05-24 Cardinal Cg Company Static-dissipative coating technology
JP7205213B2 (ja) * 2018-03-27 2023-01-17 日立金属株式会社 ＴｉＷ合金ターゲットおよびその製造方法
MX2022015046A (es) * 2020-05-29 2023-01-04 Oerlikon Metco Us Inc Proceso de hdh (hidruracion-deshidruracion) para la fabricacion de polvos de aleacion de soldadura fuerte.
CN112225565B (zh) * 2020-10-14 2023-01-03 宁波江丰电子材料股份有限公司 一种钨硅靶坯的制备方法
CN114619038B (zh) * 2022-01-31 2023-04-25 北京科技大学 一种高纯度的钨钛合金靶材的制备方法
CN115725944A (zh) * 2022-12-05 2023-03-03 基迈克材料科技（苏州）有限公司 一种钨钛溅射靶材的制备方法
CN115922145A (zh) * 2022-12-12 2023-04-07 山西阳煤化工机械（集团）有限公司 CBN增强AgCuZr活性钎料激光钎焊层及其制备方法
CN116970853A (zh) * 2023-07-14 2023-10-31 云南贵金属实验室有限公司 一种钨钛靶材坯料的制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4331476A (en) * 1980-01-31 1982-05-25 Tektronix, Inc. Sputtering targets with low mobile ion contamination
JPS6066425A (ja) * 1983-09-22 1985-04-16 Nippon Telegr & Teleph Corp <Ntt> Ｌｓｉ電極用の高純度モリブデンタ−ゲツトならびに高純度モリブデンシリサイドタ−ゲツトおよびその製造方法
US4750932A (en) * 1985-04-15 1988-06-14 Gte Products Corporation Refractory metal silicide sputtering target
US4663120A (en) * 1985-04-15 1987-05-05 Gte Products Corporation Refractory metal silicide sputtering target
JPS62137710A (ja) * 1985-12-10 1987-06-20 Victor Co Of Japan Ltd 電極付き磁気ヘツド
AT383758B (de) * 1985-12-23 1987-08-25 Plansee Metallwerk Verfahren zur herstellung eines sputter-targets

Also Published As

Publication number Publication date
JP3103359B2 (ja) 2000-10-30
CA1325899C (en) 1994-01-11
EP0345045B1 (de) 1993-10-27
EP0345045A1 (de) 1989-12-06
US4838935A (en) 1989-06-13
KR890017387A (ko) 1989-12-15
DE68910190D1 (de) 1993-12-02
DE68910190T3 (de) 2000-03-30
EP0345045B2 (de) 2000-01-05
KR960011244B1 (ko) 1996-08-21
JPH0277575A (ja) 1990-03-16
DE68910190T2 (de) 1994-03-10

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