DE68908953D1 - Herstellungsverfahren eines Silizium-Kraftwandlers. - Google Patents

Herstellungsverfahren eines Silizium-Kraftwandlers.

Info

Publication number
DE68908953D1
DE68908953D1 DE89304025T DE68908953T DE68908953D1 DE 68908953 D1 DE68908953 D1 DE 68908953D1 DE 89304025 T DE89304025 T DE 89304025T DE 68908953 T DE68908953 T DE 68908953T DE 68908953 D1 DE68908953 D1 DE 68908953D1
Authority
DE
Germany
Prior art keywords
manufacturing process
power converter
silicon power
silicon
converter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE89304025T
Other languages
English (en)
Other versions
DE68908953T2 (de
Inventor
Mati Mikkor
Edward Sickafus
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ford Werke GmbH
Original Assignee
Ford Werke GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ford Werke GmbH filed Critical Ford Werke GmbH
Publication of DE68908953D1 publication Critical patent/DE68908953D1/de
Application granted granted Critical
Publication of DE68908953T2 publication Critical patent/DE68908953T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/14—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators
    • G01L1/142—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors
    • G01L1/148—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors using semiconductive material, e.g. silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N39/00—Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/012—Bonding, e.g. electrostatic for strain gauges

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
DE89304025T 1988-05-27 1989-04-24 Herstellungsverfahren eines Silizium-Kraftwandlers. Expired - Fee Related DE68908953T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/199,892 US4808549A (en) 1988-05-27 1988-05-27 Method for fabricating a silicon force transducer

Publications (2)

Publication Number Publication Date
DE68908953D1 true DE68908953D1 (de) 1993-10-14
DE68908953T2 DE68908953T2 (de) 1994-01-05

Family

ID=22739446

Family Applications (1)

Application Number Title Priority Date Filing Date
DE89304025T Expired - Fee Related DE68908953T2 (de) 1988-05-27 1989-04-24 Herstellungsverfahren eines Silizium-Kraftwandlers.

Country Status (4)

Country Link
US (1) US4808549A (de)
EP (1) EP0343784B1 (de)
CA (1) CA1288172C (de)
DE (1) DE68908953T2 (de)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5177661A (en) * 1989-01-13 1993-01-05 Kopin Corporation SOI diaphgram sensor
US5095401A (en) * 1989-01-13 1992-03-10 Kopin Corporation SOI diaphragm sensor
US5490034A (en) * 1989-01-13 1996-02-06 Kopin Corporation SOI actuators and microsensors
US5064165A (en) * 1989-04-07 1991-11-12 Ic Sensors, Inc. Semiconductor transducer or actuator utilizing corrugated supports
US4995953A (en) * 1989-10-30 1991-02-26 Motorola, Inc. Method of forming a semiconductor membrane using an electrochemical etch-stop
US4999735A (en) * 1990-03-08 1991-03-12 Allied-Signal Inc. Differential capacitive transducer and method of making
DE4012071A1 (de) * 1990-04-14 1991-10-17 Bosch Gmbh Robert Verfahren zur herstellung mikromechanischer strukturen
JP2918299B2 (ja) * 1990-06-25 1999-07-12 沖電気工業株式会社 半導体圧力センサおよびそれを有する半導体装置の製造方法
US5408119A (en) * 1990-10-17 1995-04-18 The Charles Stark Draper Laboratory, Inc. Monolithic micromechanical vibrating string accelerometer with trimmable resonant frequency
US5207866A (en) * 1991-01-17 1993-05-04 Motorola, Inc. Anisotropic single crystal silicon etching solution and method
US5231878A (en) * 1991-12-23 1993-08-03 Ford Motor Company Mass air flow sensor
US5313832A (en) * 1991-12-23 1994-05-24 Ford Motor Company Composite mass air flow sensor
US5407868A (en) * 1992-12-08 1995-04-18 Alliedsignal Inc. Method of making an electrode tip for a tunnel current sensing device
US5314829A (en) * 1992-12-18 1994-05-24 California Institute Of Technology Method for imaging informational biological molecules on a semiconductor substrate
US5374792A (en) * 1993-01-04 1994-12-20 General Electric Company Micromechanical moving structures including multiple contact switching system
US5316619A (en) * 1993-02-05 1994-05-31 Ford Motor Company Capacitive surface micromachine absolute pressure sensor and method for processing
US5484745A (en) * 1993-10-26 1996-01-16 Yazaki Meter Co., Ltd. Method for forming a semiconductor sensor
KR970007108B1 (ko) * 1993-11-02 1997-05-02 손병기 2중 확산을 이용한 실리콘 미세구조의 스톱퍼 제조방법
US5360521A (en) * 1993-11-12 1994-11-01 Honeywell Inc. Method for etching silicon
US5597767A (en) * 1995-01-06 1997-01-28 Texas Instruments Incorporated Separation of wafer into die with wafer-level processing
US5578224A (en) * 1995-06-07 1996-11-26 Analog Devices, Inc. Method of making micromachined device with ground plane under sensor
JPH09229945A (ja) * 1996-02-23 1997-09-05 Canon Inc マイクロ構造体を支持するエアブリッジ型構造体の製造方法とその雌型基板、並びに、エアブリッジ型構造体とそれを用いたマイクロ構造体およびトンネル電流または微小力検出用のプローブ
US6284670B1 (en) * 1997-07-23 2001-09-04 Denso Corporation Method of etching silicon wafer and silicon wafer
SG96541A1 (en) * 1997-08-14 2003-06-16 Inst Of Microelectronics Design of a novel tactile sensor
US5943223A (en) * 1997-10-15 1999-08-24 Reliance Electric Industrial Company Electric switches for reducing on-state power loss
US6297069B1 (en) * 1999-01-28 2001-10-02 Honeywell Inc. Method for supporting during fabrication mechanical members of semi-conductive dies, wafers, and devices and an associated intermediate device assembly
US6828171B2 (en) * 2002-01-16 2004-12-07 Xerox Corporation Systems and methods for thermal isolation of a silicon structure
DE112004002994A5 (de) 2004-12-08 2007-10-31 Abb Patent Gmbh Verfahren zur Herstellung eines Messumformers
US20060196281A1 (en) * 2005-03-02 2006-09-07 Delphi Technologies, Inc. Capacitive load cell apparatus having a non-planar nonconductive elastomeric dielectric
EP1760037A1 (de) * 2005-09-06 2007-03-07 Infineon Technologies SensoNor AS Verfahren zum Herstellen von mikromechanischen Strukturen
EP1760038B1 (de) * 2005-09-06 2013-06-26 Infineon Technologies AG Verfahren zum Herstellen eines Masse-Feder Systems

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4071838A (en) * 1976-02-09 1978-01-31 Diax Corporation Solid state force transducer and method of making same
US4144516A (en) * 1976-03-29 1979-03-13 Aine Harry E Solid state transducer and method of making same
US4342227A (en) * 1980-12-24 1982-08-03 International Business Machines Corporation Planar semiconductor three direction acceleration detecting device and method of fabrication
JPS5855732A (ja) * 1981-09-30 1983-04-02 Hitachi Ltd 静電容量型圧力センサ
JPH0712086B2 (ja) * 1984-01-27 1995-02-08 株式会社日立製作所 ダイヤフラムセンサの製造方法
US4665610A (en) * 1985-04-22 1987-05-19 Stanford University Method of making a semiconductor transducer having multiple level diaphragm structure
JPS6263828A (ja) * 1985-09-06 1987-03-20 Yokogawa Electric Corp 振動式トランスジューサ
US4773972A (en) * 1986-10-30 1988-09-27 Ford Motor Company Method of making silicon capacitive pressure sensor with glass layer between silicon wafers

Also Published As

Publication number Publication date
CA1288172C (en) 1991-08-27
EP0343784B1 (de) 1993-09-08
EP0343784A2 (de) 1989-11-29
EP0343784A3 (de) 1991-05-08
DE68908953T2 (de) 1994-01-05
US4808549A (en) 1989-02-28

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Legal Events

Date Code Title Description
8320 Willingness to grant licences declared (paragraph 23)
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee