DE68908927D1 - Epitaxiereaktor mit Planetenbewegung. - Google Patents
Epitaxiereaktor mit Planetenbewegung.Info
- Publication number
- DE68908927D1 DE68908927D1 DE89200665T DE68908927T DE68908927D1 DE 68908927 D1 DE68908927 D1 DE 68908927D1 DE 89200665 T DE89200665 T DE 89200665T DE 68908927 T DE68908927 T DE 68908927T DE 68908927 D1 DE68908927 D1 DE 68908927D1
- Authority
- DE
- Germany
- Prior art keywords
- planetary motion
- epitaxial reactor
- epitaxial
- reactor
- planetary
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8803688A FR2628984B1 (fr) | 1988-03-22 | 1988-03-22 | Reacteur d'epitaxie a planetaire |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68908927D1 true DE68908927D1 (de) | 1993-10-14 |
DE68908927T2 DE68908927T2 (de) | 1994-03-24 |
Family
ID=9364491
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE89200665T Expired - Fee Related DE68908927T2 (de) | 1988-03-22 | 1989-03-16 | Epitaxiereaktor mit Planetenbewegung. |
Country Status (6)
Country | Link |
---|---|
US (1) | US4961399A (de) |
EP (1) | EP0334433B1 (de) |
JP (1) | JP2835338B2 (de) |
KR (1) | KR0137876B1 (de) |
DE (1) | DE68908927T2 (de) |
FR (1) | FR2628984B1 (de) |
Families Citing this family (53)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5106453A (en) * | 1990-01-29 | 1992-04-21 | At&T Bell Laboratories | MOCVD method and apparatus |
US5275686A (en) * | 1991-09-25 | 1994-01-04 | University Of New Mexico | Radial epitaxial reactor for multiple wafer growth |
US5226383A (en) * | 1992-03-12 | 1993-07-13 | Bell Communications Research, Inc. | Gas foil rotating substrate holder |
JPH06310438A (ja) * | 1993-04-22 | 1994-11-04 | Mitsubishi Electric Corp | 化合物半導体気相成長用基板ホルダおよび化合物半導体気相成長装置 |
US6090211A (en) * | 1996-03-27 | 2000-07-18 | Matsushita Electric Industrial Co., Ltd. | Apparatus and method for forming semiconductor thin layer |
US5866204A (en) | 1996-07-23 | 1999-02-02 | The Governors Of The University Of Alberta | Method of depositing shadow sculpted thin films |
US5747113A (en) * | 1996-07-29 | 1998-05-05 | Tsai; Charles Su-Chang | Method of chemical vapor deposition for producing layer variation by planetary susceptor rotation |
US5788777A (en) * | 1997-03-06 | 1998-08-04 | Burk, Jr.; Albert A. | Susceptor for an epitaxial growth factor |
US5888303A (en) * | 1997-04-07 | 1999-03-30 | R.E. Dixon Inc. | Gas inlet apparatus and method for chemical vapor deposition reactors |
US6206065B1 (en) | 1997-07-30 | 2001-03-27 | The Governors Of The University Of Alberta | Glancing angle deposition of thin films |
US6080241A (en) * | 1998-09-02 | 2000-06-27 | Emcore Corporation | Chemical vapor deposition chamber having an adjustable flow flange |
IT1312150B1 (it) * | 1999-03-25 | 2002-04-09 | Lpe Spa | Perfezionata camera di reazione per reattore epitassiale |
ATE276381T1 (de) * | 1999-07-13 | 2004-10-15 | Aixtron Ag | Abdichtungsmittel und dessen verwendung in abscheidungsreaktor |
JP4809562B2 (ja) * | 1999-12-22 | 2011-11-09 | アイクストロン、アーゲー | 化学気相成膜反応室 |
US6666920B1 (en) * | 2000-08-09 | 2003-12-23 | Itt Manufacturing Enterprises, Inc. | Gas collector for providing an even flow of gasses through a reaction chamber of an epitaxial reactor |
US6325855B1 (en) | 2000-08-09 | 2001-12-04 | Itt Manufacturing Enterprises, Inc. | Gas collector for epitaxial reactors |
DE10043601A1 (de) * | 2000-09-01 | 2002-03-14 | Aixtron Ag | Vorrichtung und Verfahren zum Abscheiden insbesondere kristalliner Schichten auf insbesondere kristallinen Substraten |
DE10043599A1 (de) * | 2000-09-01 | 2002-03-14 | Aixtron Ag | Vorrichtung zum Abscheiden insbesondere kristalliner Schichten auf einem oder mehreren insbesondere ebenfalls kristalliner Substraten |
DE10064941A1 (de) * | 2000-09-22 | 2002-04-11 | Aixtron Ag | Gaseinlassorgan |
DE10064944A1 (de) * | 2000-09-22 | 2002-04-11 | Aixtron Ag | Verfahren zum Abscheiden von insbesondere kristallinen Schichten, Gaseinlassorgan sowie Vorrichtung zur Durchführung des Verfahrens |
WO2002024985A1 (de) * | 2000-09-22 | 2002-03-28 | Aixtron Ag | Gaseinlassorgan für cvd-verfahren und vorrichtung |
US7797966B2 (en) * | 2000-12-29 | 2010-09-21 | Single Crystal Technologies, Inc. | Hot substrate deposition of fused silica |
US6569250B2 (en) | 2001-01-08 | 2003-05-27 | Cree, Inc. | Gas-driven rotation apparatus and method for forming silicon carbide layers |
DE10156441A1 (de) * | 2001-05-18 | 2002-11-21 | Mattson Thermal Products Gmbh | Vorrichtung zur Aufnahme von scheibenförmigen Objekten und Vorrichtung zur Handhabung von Objekten |
EP1393355A2 (de) * | 2001-05-18 | 2004-03-03 | Mattson Thermal Products GmbH | Vorrichtung zur aufnahme von scheibenförmigen objekten |
US6896738B2 (en) * | 2001-10-30 | 2005-05-24 | Cree, Inc. | Induction heating devices and methods for controllably heating an article |
US6797069B2 (en) * | 2002-04-08 | 2004-09-28 | Cree, Inc. | Gas driven planetary rotation apparatus and methods for forming silicon carbide layers |
US7166168B1 (en) | 2002-10-18 | 2007-01-23 | Carl Zeiss Smt Ag | Substrate-coating system and an associated substrate-heating method |
US20050011459A1 (en) * | 2003-07-15 | 2005-01-20 | Heng Liu | Chemical vapor deposition reactor |
US20050178336A1 (en) * | 2003-07-15 | 2005-08-18 | Heng Liu | Chemical vapor deposition reactor having multiple inlets |
DE102004009130A1 (de) * | 2004-02-25 | 2005-09-15 | Aixtron Ag | Einlasssystem für einen MOCVD-Reaktor |
GB2469225B (en) * | 2005-02-23 | 2011-02-16 | Bridgelux Inc | Chemical vapor deposition reactor having multiple inlets |
US8052794B2 (en) * | 2005-09-12 | 2011-11-08 | The United States Of America As Represented By The Secretary Of The Navy | Directed reagents to improve material uniformity |
US8628622B2 (en) * | 2005-09-12 | 2014-01-14 | Cree, Inc. | Gas driven rotation apparatus and method for forming crystalline layers |
US8004740B2 (en) * | 2006-11-09 | 2011-08-23 | International Business Machines Corporation | Device and system for reflective digital light processing (DLP) |
US20090096349A1 (en) * | 2007-04-26 | 2009-04-16 | Moshtagh Vahid S | Cross flow cvd reactor |
US8216419B2 (en) * | 2008-03-28 | 2012-07-10 | Bridgelux, Inc. | Drilled CVD shower head |
US8440259B2 (en) * | 2007-09-05 | 2013-05-14 | Intermolecular, Inc. | Vapor based combinatorial processing |
US8778079B2 (en) | 2007-10-11 | 2014-07-15 | Valence Process Equipment, Inc. | Chemical vapor deposition reactor |
US8668775B2 (en) * | 2007-10-31 | 2014-03-11 | Toshiba Techno Center Inc. | Machine CVD shower head |
KR101046068B1 (ko) * | 2008-11-27 | 2011-07-01 | 삼성엘이디 주식회사 | 화학 기상 증착 장치용 서셉터 및 이를 구비하는 화학 기상증착 장치 |
DE102010000554A1 (de) | 2009-03-16 | 2010-09-30 | Aixtron Ag | MOCVD-Reaktor mit einer örtlich verschieden an ein Wärmeableitorgan angekoppelten Deckenplatte |
DE102009025971A1 (de) * | 2009-06-15 | 2010-12-16 | Aixtron Ag | Verfahren zum Einrichten eines Epitaxie-Reaktors |
WO2011044412A1 (en) | 2009-10-09 | 2011-04-14 | Cree, Inc. | Multi-rotation epitaxial growth apparatus and reactors incorporating same |
JP2012080025A (ja) * | 2010-10-06 | 2012-04-19 | Toshiba Corp | 半導体成長装置 |
DE102011002146B4 (de) | 2011-04-18 | 2023-03-09 | Aixtron Se | Vorrichtung und Verfahren zum Abscheiden von Halbleiterschichten mit HCI-Zugabe zur Unterdrückung parasitären Wachstums |
DE102011002145B4 (de) | 2011-04-18 | 2023-02-09 | Aixtron Se | Vorrichtung und Verfahren zum großflächigen Abscheiden von Halbleiterschichten mit gasgetrennter HCI-Einspeisung |
US20130171350A1 (en) * | 2011-12-29 | 2013-07-04 | Intermolecular Inc. | High Throughput Processing Using Metal Organic Chemical Vapor Deposition |
US9388494B2 (en) | 2012-06-25 | 2016-07-12 | Novellus Systems, Inc. | Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region |
JP5337902B2 (ja) * | 2012-09-14 | 2013-11-06 | 大陽日酸株式会社 | 気相成長装置及び方法 |
US9399228B2 (en) * | 2013-02-06 | 2016-07-26 | Novellus Systems, Inc. | Method and apparatus for purging and plasma suppression in a process chamber |
JP2017055086A (ja) | 2015-09-11 | 2017-03-16 | 昭和電工株式会社 | SiCエピタキシャルウェハの製造方法及びSiCエピタキシャルウェハの製造装置 |
US9758868B1 (en) | 2016-03-10 | 2017-09-12 | Lam Research Corporation | Plasma suppression behind a showerhead through the use of increased pressure |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1363449A (fr) * | 1962-05-17 | 1964-06-12 | Motorola Inc | Procédé pour former des pellicules minces d'oxyde |
US3721210A (en) * | 1971-04-19 | 1973-03-20 | Texas Instruments Inc | Low volume deposition reactor |
US4047496A (en) * | 1974-05-31 | 1977-09-13 | Applied Materials, Inc. | Epitaxial radiation heated reactor |
JPS5649518A (en) * | 1979-09-28 | 1981-05-06 | Hitachi Ltd | Wafer treating desk |
JPS6027691A (ja) * | 1983-07-25 | 1985-02-12 | Ulvac Corp | InPやInとPを含む化合物半導体の気相エピタキシャル成長用化学反応装置 |
JPS6074509A (ja) * | 1983-09-30 | 1985-04-26 | Hitachi Ltd | 常圧cvd装置 |
JPS6186498A (ja) * | 1984-10-05 | 1986-05-01 | Toshiba Mach Co Ltd | 気相成長装置 |
FR2596070A1 (fr) * | 1986-03-21 | 1987-09-25 | Labo Electronique Physique | Dispositif comprenant un suscepteur plan tournant parallelement a un plan de reference autour d'un axe perpendiculaire a ce plan |
JPS62228478A (ja) * | 1986-03-31 | 1987-10-07 | Canon Inc | 堆積膜形成装置 |
JPS62238365A (ja) * | 1986-04-08 | 1987-10-19 | Hitachi Electronics Eng Co Ltd | Cvd薄膜形成装置 |
-
1988
- 1988-03-22 FR FR8803688A patent/FR2628984B1/fr not_active Expired - Lifetime
-
1989
- 1989-03-14 US US07/323,468 patent/US4961399A/en not_active Expired - Lifetime
- 1989-03-16 DE DE89200665T patent/DE68908927T2/de not_active Expired - Fee Related
- 1989-03-16 EP EP89200665A patent/EP0334433B1/de not_active Expired - Lifetime
- 1989-03-21 KR KR1019890003484A patent/KR0137876B1/ko not_active IP Right Cessation
- 1989-03-22 JP JP1067763A patent/JP2835338B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR890015356A (ko) | 1989-10-30 |
FR2628984B1 (fr) | 1990-12-28 |
EP0334433A1 (de) | 1989-09-27 |
DE68908927T2 (de) | 1994-03-24 |
JPH01278497A (ja) | 1989-11-08 |
FR2628984A1 (fr) | 1989-09-29 |
JP2835338B2 (ja) | 1998-12-14 |
KR0137876B1 (ko) | 1998-08-17 |
US4961399A (en) | 1990-10-09 |
EP0334433B1 (de) | 1993-09-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N |
|
8339 | Ceased/non-payment of the annual fee |