ATE276381T1 - Abdichtungsmittel und dessen verwendung in abscheidungsreaktor - Google Patents

Abdichtungsmittel und dessen verwendung in abscheidungsreaktor

Info

Publication number
ATE276381T1
ATE276381T1 AT00951330T AT00951330T ATE276381T1 AT E276381 T1 ATE276381 T1 AT E276381T1 AT 00951330 T AT00951330 T AT 00951330T AT 00951330 T AT00951330 T AT 00951330T AT E276381 T1 ATE276381 T1 AT E276381T1
Authority
AT
Austria
Prior art keywords
troughs
interface
space
flow
boundary
Prior art date
Application number
AT00951330T
Other languages
English (en)
Inventor
Peter Frijlink
Original Assignee
Aixtron Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron Ag filed Critical Aixtron Ag
Application granted granted Critical
Publication of ATE276381T1 publication Critical patent/ATE276381T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Sealing Material Composition (AREA)
AT00951330T 1999-07-13 2000-07-03 Abdichtungsmittel und dessen verwendung in abscheidungsreaktor ATE276381T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP99401760 1999-07-13
PCT/EP2000/006244 WO2001004377A1 (en) 1999-07-13 2000-07-03 Seal means and its application in deposition reactor

Publications (1)

Publication Number Publication Date
ATE276381T1 true ATE276381T1 (de) 2004-10-15

Family

ID=8242055

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00951330T ATE276381T1 (de) 1999-07-13 2000-07-03 Abdichtungsmittel und dessen verwendung in abscheidungsreaktor

Country Status (8)

Country Link
US (1) US6475286B1 (de)
EP (1) EP1196645B1 (de)
JP (1) JP4606675B2 (de)
KR (1) KR100689423B1 (de)
AT (1) ATE276381T1 (de)
DE (1) DE60013838T2 (de)
TW (1) TW520404B (de)
WO (1) WO2001004377A1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10043599A1 (de) * 2000-09-01 2002-03-14 Aixtron Ag Vorrichtung zum Abscheiden insbesondere kristalliner Schichten auf einem oder mehreren insbesondere ebenfalls kristalliner Substraten
US6821378B1 (en) * 2001-05-25 2004-11-23 Lam Research Corporation Pump baffle and screen to improve etch uniformity
DE10207461A1 (de) * 2002-02-22 2003-09-04 Aixtron Ag Verfahren und Vorrichtung zum Abscheiden von mehrkomponentigen Halbleiterschichten auf mindestens einem Substrat
US20050121143A1 (en) * 2002-05-23 2005-06-09 Lam Research Corporation Pump baffle and screen to improve etch uniformity
US7150789B2 (en) * 2002-07-29 2006-12-19 Micron Technology, Inc. Atomic layer deposition methods
US6890596B2 (en) * 2002-08-15 2005-05-10 Micron Technology, Inc. Deposition methods
US6753271B2 (en) * 2002-08-15 2004-06-22 Micron Technology, Inc. Atomic layer deposition methods
US6673701B1 (en) * 2002-08-27 2004-01-06 Micron Technology, Inc. Atomic layer deposition methods
US20050178336A1 (en) * 2003-07-15 2005-08-18 Heng Liu Chemical vapor deposition reactor having multiple inlets
US20090096349A1 (en) * 2007-04-26 2009-04-16 Moshtagh Vahid S Cross flow cvd reactor
JP6221932B2 (ja) * 2014-05-16 2017-11-01 東京エレクトロン株式会社 成膜装置
US20160033070A1 (en) * 2014-08-01 2016-02-04 Applied Materials, Inc. Recursive pumping member

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4438724A (en) * 1982-08-13 1984-03-27 Energy Conversion Devices, Inc. Grooved gas gate
US4450786A (en) * 1982-08-13 1984-05-29 Energy Conversion Devices, Inc. Grooved gas gate
FR2628984B1 (fr) 1988-03-22 1990-12-28 Labo Electronique Physique Reacteur d'epitaxie a planetaire
FR2638020B1 (fr) * 1988-10-14 1990-12-28 Labo Electronique Physique Reacteur d'epitaxie a collecteur de gaz ameliore
US5105762A (en) 1988-12-20 1992-04-21 Texas Instruments Incorporated Support and seal structure for CCVD reactor
EP0378815A3 (de) * 1988-12-20 1991-07-31 Texas Instruments Incorporated Anlage zur kontinuierlichen chemischen Gasphasen-Abscheidung
JP2733532B2 (ja) * 1990-02-26 1998-03-30 東京エレクトロン株式会社 熱処理装置
JPH05191158A (ja) * 1992-01-10 1993-07-30 Fujitsu Ltd 増幅器
US5370739A (en) * 1992-06-15 1994-12-06 Materials Research Corporation Rotating susceptor semiconductor wafer processing cluster tool module useful for tungsten CVD
JP2934565B2 (ja) * 1993-05-21 1999-08-16 三菱電機株式会社 半導体製造装置及び半導体製造方法
JPH10256163A (ja) * 1997-03-11 1998-09-25 Toshiba Corp 高速回転型枚葉式気相成長装置
JP3249936B2 (ja) 1997-06-20 2002-01-28 住友金属工業株式会社 簡易着脱型蓋付き容器
JP3480280B2 (ja) * 1997-10-28 2003-12-15 東京エレクトロン株式会社 縦型処理装置

Also Published As

Publication number Publication date
DE60013838T2 (de) 2005-02-10
EP1196645B1 (de) 2004-09-15
TW520404B (en) 2003-02-11
JP4606675B2 (ja) 2011-01-05
US6475286B1 (en) 2002-11-05
WO2001004377A1 (en) 2001-01-18
KR20020047086A (ko) 2002-06-21
JP2003504884A (ja) 2003-02-04
EP1196645A1 (de) 2002-04-17
WO2001004377A8 (en) 2001-07-05
KR100689423B1 (ko) 2007-03-08
DE60013838D1 (de) 2004-10-21

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Legal Events

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