DE60336560D1 - Schutzverfahren für ein halbleiterbauelement und dieses verwendendes schutzgerät für ein halbleiterbauelement - Google Patents

Schutzverfahren für ein halbleiterbauelement und dieses verwendendes schutzgerät für ein halbleiterbauelement

Info

Publication number
DE60336560D1
DE60336560D1 DE60336560T DE60336560T DE60336560D1 DE 60336560 D1 DE60336560 D1 DE 60336560D1 DE 60336560 T DE60336560 T DE 60336560T DE 60336560 T DE60336560 T DE 60336560T DE 60336560 D1 DE60336560 D1 DE 60336560D1
Authority
DE
Germany
Prior art keywords
semiconductor component
protection device
protection
protection method
use protection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60336560T
Other languages
English (en)
Inventor
Shunzou Oshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yazaki Corp
Original Assignee
Yazaki Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yazaki Corp filed Critical Yazaki Corp
Application granted granted Critical
Publication of DE60336560D1 publication Critical patent/DE60336560D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H5/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection
    • H02H5/04—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature
    • H02H5/044—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature using a semiconductor device to sense the temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K2017/0806—Modifications for protecting switching circuit against overcurrent or overvoltage against excessive temperature

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electronic Switches (AREA)
  • Protection Of Static Devices (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Control Of Voltage And Current In General (AREA)
  • Power Conversion In General (AREA)
DE60336560T 2002-07-12 2003-07-10 Schutzverfahren für ein halbleiterbauelement und dieses verwendendes schutzgerät für ein halbleiterbauelement Expired - Lifetime DE60336560D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002204729A JP3990218B2 (ja) 2002-07-12 2002-07-12 半導体素子の保護装置
PCT/JP2003/008786 WO2004008500A2 (en) 2002-07-12 2003-07-10 Method of protecting semiconductor device and protection apparatus for semiconductor device using the same

Publications (1)

Publication Number Publication Date
DE60336560D1 true DE60336560D1 (de) 2011-05-12

Family

ID=30112732

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60336560T Expired - Lifetime DE60336560D1 (de) 2002-07-12 2003-07-10 Schutzverfahren für ein halbleiterbauelement und dieses verwendendes schutzgerät für ein halbleiterbauelement

Country Status (8)

Country Link
US (1) US7248452B2 (de)
EP (1) EP1522089B1 (de)
JP (2) JP3990218B2 (de)
KR (1) KR100749181B1 (de)
CN (1) CN1669118B (de)
AU (1) AU2003250532A1 (de)
DE (1) DE60336560D1 (de)
WO (1) WO2004008500A2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4278572B2 (ja) * 2004-06-16 2009-06-17 矢崎総業株式会社 半導体スイッチの制御装置
JP4398312B2 (ja) * 2004-07-06 2010-01-13 矢崎総業株式会社 半導体スイッチの制御装置
JP4701052B2 (ja) 2005-09-21 2011-06-15 矢崎総業株式会社 過電流検出装置
JP4773822B2 (ja) * 2005-12-26 2011-09-14 株式会社オートネットワーク技術研究所 電力供給制御装置
JP4800772B2 (ja) * 2006-01-04 2011-10-26 ルネサスエレクトロニクス株式会社 過電流検出回路
JP4929020B2 (ja) 2007-04-10 2012-05-09 矢崎総業株式会社 負荷回路の過電流保護装置
JP5030717B2 (ja) * 2007-09-10 2012-09-19 矢崎総業株式会社 過電流保護装置
US7843248B1 (en) * 2007-11-01 2010-11-30 Intersil Americas Inc. Analog switch with overcurrent detection
JP5087441B2 (ja) * 2008-03-19 2012-12-05 矢崎総業株式会社 電力供給装置
JP5351694B2 (ja) * 2009-10-02 2013-11-27 矢崎総業株式会社 半導体スイッチの保護装置
JP2011130564A (ja) * 2009-12-17 2011-06-30 Hitachi Ltd パワー半導体スイッチ素子の保護装置および保護方法
JP5480653B2 (ja) * 2010-02-05 2014-04-23 矢崎総業株式会社 負荷回路の過電流保護装置
JP5351793B2 (ja) * 2010-02-05 2013-11-27 矢崎総業株式会社 過電流保護装置及び過電流保護システム
JP5952060B2 (ja) * 2012-04-05 2016-07-13 矢崎総業株式会社 発熱保護回路及び発熱保護方法
WO2013165004A1 (ja) 2012-05-01 2013-11-07 Ohshima Shunzou 過電流保護電源装置
JP6597213B2 (ja) * 2015-11-12 2019-10-30 株式会社デンソー 過電流検出装置
US10312804B2 (en) 2016-02-05 2019-06-04 Shunzou Ohshima Power supply apparatus with power factor correction using fixed on and off periods
JP7347316B2 (ja) * 2020-04-20 2023-09-20 株式会社オートネットワーク技術研究所 給電制御装置

Family Cites Families (27)

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Publication number Priority date Publication date Assignee Title
JPH056053Y2 (de) 1987-07-22 1993-02-17
JP2797336B2 (ja) 1988-09-26 1998-09-17 日本電気株式会社 半導体集積回路
JPH06180332A (ja) 1992-12-14 1994-06-28 Nec Kansai Ltd 電流検出回路
JP2779373B2 (ja) 1993-03-29 1998-07-23 セイコープレシジョン株式会社 Ｅｌ素子
JP3080823B2 (ja) 1993-10-15 2000-08-28 モトローラ株式会社 半導体集積回路装置
DE69533926T2 (de) * 1994-06-10 2005-12-01 Omron Corp. Regelschaltung für Gleichstrommotor
JPH0870244A (ja) 1994-08-30 1996-03-12 Hitachi Ltd 駆動回路
US5563759A (en) 1995-04-11 1996-10-08 International Rectifier Corporation Protected three-pin mosgated power switch with separate input reset signal level
EP0746101B1 (de) 1995-05-31 2001-08-08 STMicroelectronics S.r.l. Schaltung zum Erkennen von und Schutz vor Kurzschlüssen für digitale Ausgänge
JPH09145749A (ja) 1995-11-29 1997-06-06 Toyota Motor Corp 電流検出回路
JP2940542B2 (ja) * 1997-05-07 1999-08-25 セイコーエプソン株式会社 インクジェット式プリントヘッドの駆動波形生成装置及び駆動波形生成方法
JPH10335998A (ja) 1997-06-05 1998-12-18 Denso Corp 電流検出回路
DE19729904A1 (de) 1997-07-12 1999-02-11 Kammerer Gmbh M Schaltungsanordnung zur Überwachung von durch eine Last fließenden Strömen
JP3706515B2 (ja) * 1998-12-28 2005-10-12 矢崎総業株式会社 電源供給制御装置および電源供給制御方法
JP3509605B2 (ja) 1999-02-12 2004-03-22 日信工業株式会社 電気機器駆動回路における電界効果トランジスタの過熱診断装置
JP2000235424A (ja) 1999-02-12 2000-08-29 Yazaki Corp カレントミラー回路、電流センサ及びこれを具備したスイッチング回路並びにスイッチングデバイス
JP2000299922A (ja) * 1999-02-12 2000-10-24 Yazaki Corp 電源供給制御装置および電源供給制御方法
JP2000308340A (ja) 1999-02-19 2000-11-02 Yazaki Corp ヒューズレスｄｃ／ｄｃコンバータ
JP2000350440A (ja) 1999-06-01 2000-12-15 Murata Mfg Co Ltd 降圧型スイッチング電源回路
EP1115203B1 (de) * 1999-06-18 2006-11-08 Matsushita Electric Industrial Co., Ltd. Ausgangssteuereinheit
US6166530A (en) 2000-02-11 2000-12-26 Advanced Analogic Technologies, Inc. Current-Limited switch with fast transient response
JP2002017036A (ja) * 2000-06-29 2002-01-18 Nissan Motor Co Ltd 過電流検知回路
US6377032B1 (en) * 2000-07-20 2002-04-23 Semtech Corporation Method and apparatus for virtual current sensing in DC-DC switched mode power supplies
JP3741949B2 (ja) * 2000-07-24 2006-02-01 矢崎総業株式会社 半導体スイッチング装置
JP3914004B2 (ja) * 2001-05-25 2007-05-16 矢崎総業株式会社 半導体素子の過電流検出・保護装置
US6552889B1 (en) 2001-07-17 2003-04-22 Vishay Siliconix Current limiting technique for hybrid power MOSFET circuits
US6624994B1 (en) * 2001-11-09 2003-09-23 National Semiconductor Corporation Apparatus and method for over-current protection of an analog switch

Also Published As

Publication number Publication date
EP1522089B1 (de) 2011-03-30
JP2007159159A (ja) 2007-06-21
AU2003250532A1 (en) 2004-02-02
KR20050016677A (ko) 2005-02-21
CN1669118B (zh) 2010-10-06
EP1522089A2 (de) 2005-04-13
CN1669118A (zh) 2005-09-14
US7248452B2 (en) 2007-07-24
KR100749181B1 (ko) 2007-08-13
US20050275990A1 (en) 2005-12-15
WO2004008500A3 (en) 2004-05-21
WO2004008500A2 (en) 2004-01-22
JP2004048498A (ja) 2004-02-12
JP3990218B2 (ja) 2007-10-10

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