DE60325851D1 - Halbleiter-strahlungsquelle mit gesättigtem phosphor - Google Patents

Halbleiter-strahlungsquelle mit gesättigtem phosphor

Info

Publication number
DE60325851D1
DE60325851D1 DE60325851T DE60325851T DE60325851D1 DE 60325851 D1 DE60325851 D1 DE 60325851D1 DE 60325851 T DE60325851 T DE 60325851T DE 60325851 T DE60325851 T DE 60325851T DE 60325851 D1 DE60325851 D1 DE 60325851D1
Authority
DE
Germany
Prior art keywords
conversion material
light
emitter
wavelength
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60325851T
Other languages
German (de)
English (en)
Inventor
Bernd Keller
Yankun Fu
James Seruto
James Ibbetson
Jayesh Bharathan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=29736462&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE60325851(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Cree Inc filed Critical Cree Inc
Application granted granted Critical
Publication of DE60325851D1 publication Critical patent/DE60325851D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0087—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for illuminating phosphorescent or fluorescent materials, e.g. using optical arrangements specifically adapted for guiding or shaping laser beams illuminating these materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02257—Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

Landscapes

  • Luminescent Compositions (AREA)
  • Led Device Packages (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Bipolar Transistors (AREA)
  • Radiation-Therapy Devices (AREA)
DE60325851T 2002-06-13 2003-06-12 Halbleiter-strahlungsquelle mit gesättigtem phosphor Expired - Lifetime DE60325851D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US38832702P 2002-06-13 2002-06-13
PCT/US2003/019000 WO2003107441A2 (en) 2002-06-13 2003-06-12 Saturated phosphor solid emitter

Publications (1)

Publication Number Publication Date
DE60325851D1 true DE60325851D1 (de) 2009-03-05

Family

ID=29736462

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60325851T Expired - Lifetime DE60325851D1 (de) 2002-06-13 2003-06-12 Halbleiter-strahlungsquelle mit gesättigtem phosphor

Country Status (11)

Country Link
US (1) US20040012027A1 (enExample)
EP (1) EP1512181B1 (enExample)
JP (2) JP2005530349A (enExample)
CN (1) CN100405620C (enExample)
AT (1) ATE421169T1 (enExample)
AU (1) AU2003238234A1 (enExample)
CA (1) CA2489237A1 (enExample)
DE (1) DE60325851D1 (enExample)
MY (1) MY138406A (enExample)
TW (1) TWI329367B (enExample)
WO (1) WO2003107441A2 (enExample)

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* Cited by examiner, † Cited by third party
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US20040012027A1 (en) 2004-01-22
WO2003107441A2 (en) 2003-12-24
ATE421169T1 (de) 2009-01-15
AU2003238234A1 (en) 2003-12-31
EP1512181B1 (en) 2009-01-14
WO2003107441A8 (en) 2004-04-29
TWI329367B (en) 2010-08-21
MY138406A (en) 2009-05-29
WO2003107441A9 (en) 2004-03-11
JP2005530349A (ja) 2005-10-06
CA2489237A1 (en) 2003-12-24
WO2003107441A3 (en) 2004-07-15
TW200409478A (en) 2004-06-01
EP1512181A2 (en) 2005-03-09
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CN1675781A (zh) 2005-09-28
JP2011082568A (ja) 2011-04-21

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