DE60320017D1 - Optisches Aufzeichnungsmedium, Herstellungsprozess für dasselbe, Sputtertarget zur Herstellung desselben und optisches Aufzeichnungsverfahren für dasselbe - Google Patents

Optisches Aufzeichnungsmedium, Herstellungsprozess für dasselbe, Sputtertarget zur Herstellung desselben und optisches Aufzeichnungsverfahren für dasselbe

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Publication number
DE60320017D1
DE60320017D1 DE60320017T DE60320017T DE60320017D1 DE 60320017 D1 DE60320017 D1 DE 60320017D1 DE 60320017 T DE60320017 T DE 60320017T DE 60320017 T DE60320017 T DE 60320017T DE 60320017 D1 DE60320017 D1 DE 60320017D1
Authority
DE
Germany
Prior art keywords
same
optical recording
producing
manufacturing process
sputtering target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60320017T
Other languages
English (en)
Other versions
DE60320017T2 (de
Inventor
Makoto Harigaya
Kazunori Ito
Hiroko Tashiro
Miku Mizutani
Michiaki Shinotsuka
Hiroyuki Iwasa
Masaru Shinkai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2002189628A external-priority patent/JP2004025801A/ja
Priority claimed from JP2002214500A external-priority patent/JP3920731B2/ja
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Publication of DE60320017D1 publication Critical patent/DE60320017D1/de
Application granted granted Critical
Publication of DE60320017T2 publication Critical patent/DE60320017T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

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    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/2403—Layers; Shape, structure or physical properties thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0617—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
    • G11B7/259—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers based on silver
DE60320017T 2002-06-05 2003-06-04 Optisches Aufzeichnungsmedium, Herstellungsprozess für dasselbe, Sputtertarget zur Herstellung desselben und optisches Aufzeichnungsverfahren für dasselbe Expired - Lifetime DE60320017T2 (de)

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
JP2002163793 2002-06-05
JP2002163793 2002-06-05
JP2002189628 2002-06-28
JP2002189628A JP2004025801A (ja) 2002-06-28 2002-06-28 相変化型情報記録媒体
JP2002198114 2002-07-08
JP2002198114 2002-07-08
JP2002214500A JP3920731B2 (ja) 2002-07-23 2002-07-23 相変化型光記録媒体
JP2002214500 2002-07-23
JP2002258638 2002-09-04
JP2002258638 2002-09-04
JP2002344719 2002-11-27
JP2002344719 2002-11-27

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DE60320017D1 true DE60320017D1 (de) 2008-05-08
DE60320017T2 DE60320017T2 (de) 2009-04-16

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DE60320018T Expired - Lifetime DE60320018T2 (de) 2002-06-05 2003-06-04 Optisches Aufzeichnungsmedium, Herstellungsprozess für dasselbe, Sputtertarget zur Herstellung desselben und optisches Aufzeichnungsverfahren für dasselbe
DE60322252T Expired - Lifetime DE60322252D1 (de) 2002-06-05 2003-06-04 Sputtertarget zur Herstellung eines optischen Aufzeichnungsmediums
DE60316223T Expired - Lifetime DE60316223T2 (de) 2002-06-05 2003-06-04 Optisches Aufzeichnungsmedium, Herstellungsprozess für dasselbe und optisches Aufzeichnungsverfahren für dasselbe
DE60320017T Expired - Lifetime DE60320017T2 (de) 2002-06-05 2003-06-04 Optisches Aufzeichnungsmedium, Herstellungsprozess für dasselbe, Sputtertarget zur Herstellung desselben und optisches Aufzeichnungsverfahren für dasselbe
DE60318615T Expired - Lifetime DE60318615T2 (de) 2002-06-05 2003-06-04 Optisches Aufzeichnungsverfahren

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DE60322252T Expired - Lifetime DE60322252D1 (de) 2002-06-05 2003-06-04 Sputtertarget zur Herstellung eines optischen Aufzeichnungsmediums
DE60316223T Expired - Lifetime DE60316223T2 (de) 2002-06-05 2003-06-04 Optisches Aufzeichnungsmedium, Herstellungsprozess für dasselbe und optisches Aufzeichnungsverfahren für dasselbe

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JP4249590B2 (ja) 2002-11-18 2009-04-02 株式会社リコー 光情報記録媒体およびその製造方法
JP3977740B2 (ja) * 2002-12-27 2007-09-19 株式会社リコー 相変化型光記録媒体とその記録方法
EP1524656B1 (de) * 2003-10-16 2009-09-16 Ricoh Company, Ltd. Medium zur optischen Datenspeicherung und Verfahren zu dessen Herstellung
TW200614224A (en) * 2004-07-15 2006-05-01 Tdk Corp Optical recording medium
DE102004041191A1 (de) * 2004-08-25 2006-03-02 Infineon Technologies Ag Neue Materialien für elektrische Phasenwechselspeicher
JP2006155794A (ja) * 2004-11-30 2006-06-15 Tdk Corp 光記録媒体及びその試験方法
DE102005031394A1 (de) * 2005-07-05 2007-01-18 Infineon Technologies Ag Aufbau und Verfahren zur Herstellung von Phasenwechselspeichern mit bestimmten Schalteigenschaften
WO2007083837A1 (en) 2006-01-23 2007-07-26 Ricoh Company, Ltd. Optical recording medium
JP4871062B2 (ja) 2006-03-01 2012-02-08 株式会社リコー スパッタリングターゲット及びその製造方法、並びに追記型光記録媒体
JP2009080895A (ja) 2007-09-26 2009-04-16 Toshiba Corp 情報記録媒体及びこの媒体を用いたディスク装置
CN102804269B (zh) * 2009-06-24 2016-03-02 三菱化学媒体股份有限公司 光记录介质
US9917252B2 (en) * 2015-06-19 2018-03-13 Macronix International Co., Ltd. GaSbGe phase change memory materials
JP7283273B2 (ja) * 2019-07-01 2023-05-30 株式会社レゾナック 磁気記録媒体およびその製造方法ならびに磁気記録再生装置

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CA1337582C (en) * 1988-08-09 1995-11-21 Donald Robert Preuss Optical recording materials comprising antimony-tin alloys including a third element
JPH05286249A (ja) * 1992-02-10 1993-11-02 Hitachi Ltd 情報記録用媒体
KR0153033B1 (ko) * 1993-06-18 1998-12-15 가나이 쯔또무 정보기록용 박막 및 정보기록매체
DE19612823C2 (de) * 1995-03-31 2001-03-01 Mitsubishi Chem Corp Optisches Aufzeichnungsverfahren
TW411457B (en) * 1997-08-01 2000-11-11 Hitachi Maxell Information recording medium
CN1251212C (zh) * 2001-04-12 2006-04-12 皇家菲利浦电子有限公司 可重写光学数据存储介质
JP2003305955A (ja) * 2001-05-21 2003-10-28 Ricoh Co Ltd 光記録媒体及び記録方法

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EP1566800A1 (de) 2005-08-24
EP1569214B1 (de) 2008-03-26
DE60318615T2 (de) 2008-12-24
EP1372148B1 (de) 2007-09-12
EP1566802B1 (de) 2008-01-09
EP1566801A1 (de) 2005-08-24
TW200405323A (en) 2004-04-01
DE60320018D1 (de) 2008-05-08
TWI272606B (en) 2007-02-01
DE60322252D1 (de) 2008-08-28
DE60320018T2 (de) 2009-06-18
DE60316223D1 (de) 2007-10-25
EP1566801B1 (de) 2008-07-16
EP1566802A1 (de) 2005-08-24
DE60316223T2 (de) 2008-06-05
DE60318615D1 (de) 2008-02-21
EP1372148A2 (de) 2003-12-17
DE60320017T2 (de) 2009-04-16
EP1566800B1 (de) 2008-03-26
EP1569214A1 (de) 2005-08-31
EP1372148A3 (de) 2004-03-03

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