DE602004022733D1 - Optisches Aufzeichnungsmedium, Verfahren zu dessen Herstellung und Sputtertarget verwendet beim Sputterverfahren - Google Patents
Optisches Aufzeichnungsmedium, Verfahren zu dessen Herstellung und Sputtertarget verwendet beim SputterverfahrenInfo
- Publication number
- DE602004022733D1 DE602004022733D1 DE602004022733T DE602004022733T DE602004022733D1 DE 602004022733 D1 DE602004022733 D1 DE 602004022733D1 DE 602004022733 T DE602004022733 T DE 602004022733T DE 602004022733 T DE602004022733 T DE 602004022733T DE 602004022733 D1 DE602004022733 D1 DE 602004022733D1
- Authority
- DE
- Germany
- Prior art keywords
- sputtering
- production
- recording medium
- optical recording
- target used
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000003287 optical effect Effects 0.000 title 1
- 238000004544 sputter deposition Methods 0.000 title 1
- 238000005477 sputtering target Methods 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24306—Metals or metalloids transition metal elements of groups 3-10
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/2431—Metals or metalloids group 13 elements (B, Al, Ga, In)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24312—Metals or metalloids group 14 elements (e.g. Si, Ge, Sn)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/2403—Layers; Shape, structure or physical properties thereof
- G11B7/24035—Recording layers
- G11B7/24038—Multiple laminated recording layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
- G11B7/2533—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins
- G11B7/2534—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins polycarbonates [PC]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
- G11B7/266—Sputtering or spin-coating layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/21—Circular sheet or circular blank
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
- Physical Vapour Deposition (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Manufacturing Optical Record Carriers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003080746A JP4053916B2 (ja) | 2003-03-24 | 2003-03-24 | 光記録媒体及び光記録媒体用スパッタリングターゲット |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602004022733D1 true DE602004022733D1 (de) | 2009-10-08 |
Family
ID=32821430
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602004022733T Expired - Lifetime DE602004022733D1 (de) | 2003-03-24 | 2004-03-23 | Optisches Aufzeichnungsmedium, Verfahren zu dessen Herstellung und Sputtertarget verwendet beim Sputterverfahren |
Country Status (6)
Country | Link |
---|---|
US (1) | US7018694B2 (de) |
EP (1) | EP1463045B1 (de) |
JP (1) | JP4053916B2 (de) |
CN (1) | CN1320542C (de) |
DE (1) | DE602004022733D1 (de) |
TW (1) | TWI307503B (de) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI254301B (en) * | 2002-04-05 | 2006-05-01 | Tdk Corp | Optical recording medium and method for optically recording information in the same |
TWI254934B (en) * | 2002-04-26 | 2006-05-11 | Tdk Corp | Optical recording medium and method for optically recording data in the same |
US7231649B2 (en) * | 2002-05-31 | 2007-06-12 | Tdk Corporation | Optical recording medium and method for optically recording data in the same |
US20040038080A1 (en) * | 2002-07-01 | 2004-02-26 | Tdk Corporation | Optical recording medium and method for recording data in the same |
JP4059714B2 (ja) * | 2002-07-04 | 2008-03-12 | Tdk株式会社 | 光記録媒体 |
JP4092147B2 (ja) | 2002-07-04 | 2008-05-28 | Tdk株式会社 | 光記録媒体及び光記録方法 |
JP4282285B2 (ja) * | 2002-08-12 | 2009-06-17 | Tdk株式会社 | 光記録媒体及び光記録方法 |
US20040076907A1 (en) * | 2002-10-22 | 2004-04-22 | Tdk Corporation | Optical recording medium and method for manufacturing the same |
US7781146B2 (en) * | 2002-11-22 | 2010-08-24 | Tdk Corporation | Optical recording medium |
TWI220523B (en) * | 2003-05-26 | 2004-08-21 | Ritek Corp | Write once recording medium |
TW200615935A (en) * | 2004-11-02 | 2006-05-16 | Ritek Corp | One-time writing high-density optical information recording medium |
US7235501B2 (en) | 2004-12-13 | 2007-06-26 | Micron Technology, Inc. | Lanthanum hafnium oxide dielectrics |
US7560395B2 (en) | 2005-01-05 | 2009-07-14 | Micron Technology, Inc. | Atomic layer deposited hafnium tantalum oxide dielectrics |
US7972974B2 (en) | 2006-01-10 | 2011-07-05 | Micron Technology, Inc. | Gallium lanthanide oxide films |
US7759747B2 (en) | 2006-08-31 | 2010-07-20 | Micron Technology, Inc. | Tantalum aluminum oxynitride high-κ dielectric |
US7605030B2 (en) | 2006-08-31 | 2009-10-20 | Micron Technology, Inc. | Hafnium tantalum oxynitride high-k dielectric and metal gates |
US7432548B2 (en) * | 2006-08-31 | 2008-10-07 | Micron Technology, Inc. | Silicon lanthanide oxynitride films |
US7563730B2 (en) | 2006-08-31 | 2009-07-21 | Micron Technology, Inc. | Hafnium lanthanide oxynitride films |
US7776765B2 (en) | 2006-08-31 | 2010-08-17 | Micron Technology, Inc. | Tantalum silicon oxynitride high-k dielectrics and metal gates |
US7544604B2 (en) | 2006-08-31 | 2009-06-09 | Micron Technology, Inc. | Tantalum lanthanide oxynitride films |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62183042A (ja) * | 1986-02-06 | 1987-08-11 | Toshiba Corp | 情報記録再生方法 |
JPS62204442A (ja) | 1986-03-03 | 1987-09-09 | Toshiba Corp | 光記録媒体および光記録媒体の記録方法 |
JPH01270528A (ja) | 1988-04-21 | 1989-10-27 | Olympus Optical Co Ltd | 光学素子成形用型 |
JPH05214524A (ja) * | 1992-02-05 | 1993-08-24 | Toshiba Corp | 磁性スパッタターゲットおよびそれを用いて形成した 磁性薄膜 |
JP3568228B2 (ja) | 1994-02-21 | 2004-09-22 | 三洋電機株式会社 | 半導体装置 |
US5635763A (en) * | 1993-03-22 | 1997-06-03 | Sanyo Electric Co., Ltd. | Semiconductor device having cap-metal layer |
US5458941A (en) | 1994-06-09 | 1995-10-17 | Minnesota Mining And Manufacturing Company | Optical recording medium exhibiting eutectic phase equilbria |
KR100411658B1 (ko) * | 1995-03-27 | 2004-04-03 | 히다치 마쿠세루가부시키가이샤 | 정보기록매체및정보메모리장치 |
JP3084402B1 (ja) | 1999-04-14 | 2000-09-04 | 工業技術院長 | AlTi系合金スパッタリングターゲット及び耐摩耗性AlTi系合金硬質皮膜並びに同皮膜の形成方法 |
JP2004284241A (ja) * | 2003-03-24 | 2004-10-14 | Tdk Corp | 光記録媒体及び光記録媒体用スパッタリングターゲット |
-
2003
- 2003-03-24 JP JP2003080746A patent/JP4053916B2/ja not_active Expired - Fee Related
-
2004
- 2004-03-16 TW TW093106982A patent/TWI307503B/zh not_active IP Right Cessation
- 2004-03-22 US US10/805,727 patent/US7018694B2/en not_active Expired - Fee Related
- 2004-03-23 EP EP04006915A patent/EP1463045B1/de not_active Expired - Fee Related
- 2004-03-23 DE DE602004022733T patent/DE602004022733D1/de not_active Expired - Lifetime
- 2004-03-24 CN CNB2004100315578A patent/CN1320542C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
TWI307503B (en) | 2009-03-11 |
TW200501143A (en) | 2005-01-01 |
US7018694B2 (en) | 2006-03-28 |
EP1463045A2 (de) | 2004-09-29 |
CN1320542C (zh) | 2007-06-06 |
JP4053916B2 (ja) | 2008-02-27 |
CN1542793A (zh) | 2004-11-03 |
US20040190435A1 (en) | 2004-09-30 |
EP1463045A3 (de) | 2005-06-01 |
JP2004284242A (ja) | 2004-10-14 |
EP1463045B1 (de) | 2009-08-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |