DE602004022733D1 - Optisches Aufzeichnungsmedium, Verfahren zu dessen Herstellung und Sputtertarget verwendet beim Sputterverfahren - Google Patents

Optisches Aufzeichnungsmedium, Verfahren zu dessen Herstellung und Sputtertarget verwendet beim Sputterverfahren

Info

Publication number
DE602004022733D1
DE602004022733D1 DE602004022733T DE602004022733T DE602004022733D1 DE 602004022733 D1 DE602004022733 D1 DE 602004022733D1 DE 602004022733 T DE602004022733 T DE 602004022733T DE 602004022733 T DE602004022733 T DE 602004022733T DE 602004022733 D1 DE602004022733 D1 DE 602004022733D1
Authority
DE
Germany
Prior art keywords
sputtering
production
recording medium
optical recording
target used
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004022733T
Other languages
English (en)
Inventor
Yasuo Hosoda
Ayumi Mitsumori
Megumi Sato
Masataka Yamaguchi
Tetsuya Iida
Hiroyasu Inoue
Koji Mishima
Masaki Aoshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
TDK Corp
Original Assignee
Pioneer Corp
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Corp, TDK Corp filed Critical Pioneer Corp
Publication of DE602004022733D1 publication Critical patent/DE602004022733D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14Metallic material, boron or silicon
    • C23C14/18Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302Metals or metalloids
    • G11B2007/24306Metals or metalloids transition metal elements of groups 3-10
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302Metals or metalloids
    • G11B2007/2431Metals or metalloids group 13 elements (B, Al, Ga, In)
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302Metals or metalloids
    • G11B2007/24312Metals or metalloids group 14 elements (e.g. Si, Ge, Sn)
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/2403Layers; Shape, structure or physical properties thereof
    • G11B7/24035Recording layers
    • G11B7/24038Multiple laminated recording layers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/253Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
    • G11B7/2533Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins
    • G11B7/2534Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins polycarbonates [PC]
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/258Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/26Apparatus or processes specially adapted for the manufacture of record carriers
    • G11B7/266Sputtering or spin-coating layers
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/21Circular sheet or circular blank

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Physical Vapour Deposition (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)
  • Manufacturing Optical Record Carriers (AREA)
DE602004022733T 2003-03-24 2004-03-23 Optisches Aufzeichnungsmedium, Verfahren zu dessen Herstellung und Sputtertarget verwendet beim Sputterverfahren Expired - Lifetime DE602004022733D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003080746A JP4053916B2 (ja) 2003-03-24 2003-03-24 光記録媒体及び光記録媒体用スパッタリングターゲット

Publications (1)

Publication Number Publication Date
DE602004022733D1 true DE602004022733D1 (de) 2009-10-08

Family

ID=32821430

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004022733T Expired - Lifetime DE602004022733D1 (de) 2003-03-24 2004-03-23 Optisches Aufzeichnungsmedium, Verfahren zu dessen Herstellung und Sputtertarget verwendet beim Sputterverfahren

Country Status (6)

Country Link
US (1) US7018694B2 (de)
EP (1) EP1463045B1 (de)
JP (1) JP4053916B2 (de)
CN (1) CN1320542C (de)
DE (1) DE602004022733D1 (de)
TW (1) TWI307503B (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030190551A1 (en) * 2002-04-05 2003-10-09 Tdk Corporation Optical recording medium and method for optically recording information in the same
CN1221962C (zh) * 2002-04-26 2005-10-05 Tdk股份有限公司 光记录介质和在其中对数据进行光记录的方法
US7231649B2 (en) * 2002-05-31 2007-06-12 Tdk Corporation Optical recording medium and method for optically recording data in the same
US20040038080A1 (en) * 2002-07-01 2004-02-26 Tdk Corporation Optical recording medium and method for recording data in the same
JP4092147B2 (ja) 2002-07-04 2008-05-28 Tdk株式会社 光記録媒体及び光記録方法
JP4059714B2 (ja) * 2002-07-04 2008-03-12 Tdk株式会社 光記録媒体
JP4282285B2 (ja) * 2002-08-12 2009-06-17 Tdk株式会社 光記録媒体及び光記録方法
US20040076907A1 (en) * 2002-10-22 2004-04-22 Tdk Corporation Optical recording medium and method for manufacturing the same
US7781146B2 (en) * 2002-11-22 2010-08-24 Tdk Corporation Optical recording medium
TWI220523B (en) * 2003-05-26 2004-08-21 Ritek Corp Write once recording medium
TW200615935A (en) * 2004-11-02 2006-05-16 Ritek Corp One-time writing high-density optical information recording medium
US7235501B2 (en) 2004-12-13 2007-06-26 Micron Technology, Inc. Lanthanum hafnium oxide dielectrics
US7560395B2 (en) 2005-01-05 2009-07-14 Micron Technology, Inc. Atomic layer deposited hafnium tantalum oxide dielectrics
US7972974B2 (en) 2006-01-10 2011-07-05 Micron Technology, Inc. Gallium lanthanide oxide films
US7563730B2 (en) 2006-08-31 2009-07-21 Micron Technology, Inc. Hafnium lanthanide oxynitride films
US7759747B2 (en) 2006-08-31 2010-07-20 Micron Technology, Inc. Tantalum aluminum oxynitride high-κ dielectric
US7432548B2 (en) * 2006-08-31 2008-10-07 Micron Technology, Inc. Silicon lanthanide oxynitride films
US7776765B2 (en) 2006-08-31 2010-08-17 Micron Technology, Inc. Tantalum silicon oxynitride high-k dielectrics and metal gates
US7605030B2 (en) 2006-08-31 2009-10-20 Micron Technology, Inc. Hafnium tantalum oxynitride high-k dielectric and metal gates
US7544604B2 (en) 2006-08-31 2009-06-09 Micron Technology, Inc. Tantalum lanthanide oxynitride films

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62183042A (ja) * 1986-02-06 1987-08-11 Toshiba Corp 情報記録再生方法
JPS62204442A (ja) 1986-03-03 1987-09-09 Toshiba Corp 光記録媒体および光記録媒体の記録方法
JPH01270528A (ja) 1988-04-21 1989-10-27 Olympus Optical Co Ltd 光学素子成形用型
JPH05214524A (ja) * 1992-02-05 1993-08-24 Toshiba Corp 磁性スパッタターゲットおよびそれを用いて形成した 磁性薄膜
US5635763A (en) * 1993-03-22 1997-06-03 Sanyo Electric Co., Ltd. Semiconductor device having cap-metal layer
JP3568228B2 (ja) 1994-02-21 2004-09-22 三洋電機株式会社 半導体装置
US5458941A (en) 1994-06-09 1995-10-17 Minnesota Mining And Manufacturing Company Optical recording medium exhibiting eutectic phase equilbria
JPH08329525A (ja) * 1995-03-27 1996-12-13 Hitachi Ltd 情報記録媒体および情報メモリー装置
JP3084402B1 (ja) 1999-04-14 2000-09-04 工業技術院長 AlTi系合金スパッタリングターゲット及び耐摩耗性AlTi系合金硬質皮膜並びに同皮膜の形成方法
JP2004284241A (ja) * 2003-03-24 2004-10-14 Tdk Corp 光記録媒体及び光記録媒体用スパッタリングターゲット

Also Published As

Publication number Publication date
TW200501143A (en) 2005-01-01
US20040190435A1 (en) 2004-09-30
JP4053916B2 (ja) 2008-02-27
TWI307503B (en) 2009-03-11
EP1463045A3 (de) 2005-06-01
CN1320542C (zh) 2007-06-06
EP1463045B1 (de) 2009-08-26
CN1542793A (zh) 2004-11-03
EP1463045A2 (de) 2004-09-29
JP2004284242A (ja) 2004-10-14
US7018694B2 (en) 2006-03-28

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