DE60311350T2 - Target-Führunggsystem für einen Tröpfchengenerator in einer EUV Plasmaquelle - Google Patents
Target-Führunggsystem für einen Tröpfchengenerator in einer EUV Plasmaquelle Download PDFInfo
- Publication number
- DE60311350T2 DE60311350T2 DE60311350T DE60311350T DE60311350T2 DE 60311350 T2 DE60311350 T2 DE 60311350T2 DE 60311350 T DE60311350 T DE 60311350T DE 60311350 T DE60311350 T DE 60311350T DE 60311350 T2 DE60311350 T2 DE 60311350T2
- Authority
- DE
- Germany
- Prior art keywords
- droplets
- source
- control device
- destination
- droplet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005855 radiation Effects 0.000 claims description 19
- 239000007788 liquid Substances 0.000 claims description 14
- 229910052724 xenon Inorganic materials 0.000 claims description 6
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 6
- 239000002826 coolant Substances 0.000 claims description 5
- 239000007787 solid Substances 0.000 claims description 2
- 239000013077 target material Substances 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000005611 electricity Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—Production of X-ray radiation generated from plasma
- H05G2/002—Supply of the plasma generating material
- H05G2/0027—Arrangements for controlling the supply; Arrangements for measurements
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- X-Ray Techniques (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/157,222 US6792076B2 (en) | 2002-05-28 | 2002-05-28 | Target steering system for EUV droplet generators |
| US157222 | 2002-05-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE60311350D1 DE60311350D1 (de) | 2007-03-15 |
| DE60311350T2 true DE60311350T2 (de) | 2007-07-12 |
Family
ID=29419637
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60311350T Expired - Lifetime DE60311350T2 (de) | 2002-05-28 | 2003-05-20 | Target-Führunggsystem für einen Tröpfchengenerator in einer EUV Plasmaquelle |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6792076B2 (enExample) |
| EP (1) | EP1367867B1 (enExample) |
| JP (1) | JP4340780B2 (enExample) |
| DE (1) | DE60311350T2 (enExample) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7897947B2 (en) | 2007-07-13 | 2011-03-01 | Cymer, Inc. | Laser produced plasma EUV light source having a droplet stream produced using a modulated disturbance wave |
| US7598509B2 (en) * | 2004-11-01 | 2009-10-06 | Cymer, Inc. | Laser produced plasma EUV light source |
| US8653437B2 (en) | 2010-10-04 | 2014-02-18 | Cymer, Llc | EUV light source with subsystem(s) for maintaining LPP drive laser output during EUV non-output periods |
| JP4174626B2 (ja) * | 2002-07-19 | 2008-11-05 | 株式会社島津製作所 | X線発生装置 |
| DE10339495B4 (de) * | 2002-10-08 | 2007-10-04 | Xtreme Technologies Gmbh | Anordnung zur optischen Detektion eines bewegten Targetstromes für eine gepulste energiestrahlgepumpte Strahlungserzeugung |
| DE10260376A1 (de) * | 2002-12-13 | 2004-07-15 | Forschungsverbund Berlin E.V. | Vorrichtung und Verfahren zur Erzeugung eines Tröpfchen-Targets |
| US7087914B2 (en) * | 2004-03-17 | 2006-08-08 | Cymer, Inc | High repetition rate laser produced plasma EUV light source |
| JP4917014B2 (ja) * | 2004-03-10 | 2012-04-18 | サイマー インコーポレイテッド | Euv光源 |
| US7164144B2 (en) * | 2004-03-10 | 2007-01-16 | Cymer Inc. | EUV light source |
| JP4574211B2 (ja) * | 2004-04-19 | 2010-11-04 | キヤノン株式会社 | 光源装置、当該光源装置を有する露光装置 |
| DE102004042501A1 (de) * | 2004-08-31 | 2006-03-16 | Xtreme Technologies Gmbh | Vorrichtung zur Bereitstellung eines reproduzierbaren Targetstromes für die energiestrahlinduzierte Erzeugung kurzwelliger elektromagnetischer Strahlung |
| JP2006128157A (ja) * | 2004-10-26 | 2006-05-18 | Komatsu Ltd | 極端紫外光源装置用ドライバレーザシステム |
| JP4564369B2 (ja) | 2005-02-04 | 2010-10-20 | 株式会社小松製作所 | 極端紫外光源装置 |
| US7718985B1 (en) | 2005-11-01 | 2010-05-18 | University Of Central Florida Research Foundation, Inc. | Advanced droplet and plasma targeting system |
| JP5156192B2 (ja) * | 2006-01-24 | 2013-03-06 | ギガフォトン株式会社 | 極端紫外光源装置 |
| JP5126806B2 (ja) * | 2006-09-12 | 2013-01-23 | 一般財団法人電力中央研究所 | 高エネルギー粒子発生装置及び管状部材非破壊検査装置並びに高エネルギー粒子発生方法 |
| US20080237498A1 (en) * | 2007-01-29 | 2008-10-02 | Macfarlane Joseph J | High-efficiency, low-debris short-wavelength light sources |
| US8901521B2 (en) * | 2007-08-23 | 2014-12-02 | Asml Netherlands B.V. | Module and method for producing extreme ultraviolet radiation |
| WO2011013779A1 (ja) * | 2009-07-29 | 2011-02-03 | 株式会社小松製作所 | 極端紫外光源装置、極端紫外光源装置の制御方法、およびそのプログラムを記録した記録媒体 |
| WO2011116898A1 (en) * | 2010-03-25 | 2011-09-29 | Eth Zurich | Steering device for controlling the direction and/or velocity of droplets of a target material and extreme euv source with such a steering device |
| JP5075951B2 (ja) * | 2010-07-16 | 2012-11-21 | ギガフォトン株式会社 | 極端紫外光源装置及びドライバレーザシステム |
| US9279445B2 (en) | 2011-12-16 | 2016-03-08 | Asml Netherlands B.V. | Droplet generator steering system |
| JP5563012B2 (ja) * | 2012-04-18 | 2014-07-30 | ギガフォトン株式会社 | 極端紫外光源装置 |
| WO2014006193A1 (en) | 2012-07-06 | 2014-01-09 | ETH Zürich | Method for controlling an interaction between droplet targets and a laser and apparatus for conducting said method |
| WO2014019803A1 (en) * | 2012-08-01 | 2014-02-06 | Asml Netherlands B.V. | Method and apparatus for generating radiation |
| JP6058324B2 (ja) * | 2012-09-11 | 2017-01-11 | ギガフォトン株式会社 | ターゲット供給装置の制御方法、および、ターゲット供給装置 |
| CN105074577B (zh) * | 2013-04-05 | 2018-06-19 | Asml荷兰有限公司 | 源收集器设备、光刻设备和方法 |
| US10499485B2 (en) * | 2017-06-20 | 2019-12-03 | Asml Netherlands B.V. | Supply system for an extreme ultraviolet light source |
| US11550233B2 (en) * | 2018-08-14 | 2023-01-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Lithography system and operation method thereof |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3586244T2 (de) | 1984-12-26 | 2000-04-20 | Kabushiki Kaisha Toshiba | Vorrichtung zur Erzeugung von Weich-Röntgenstrahlen durch ein Hochenergiebündel. |
| US5577091A (en) * | 1994-04-01 | 1996-11-19 | University Of Central Florida | Water laser plasma x-ray point sources |
| US5577092A (en) | 1995-01-25 | 1996-11-19 | Kublak; Glenn D. | Cluster beam targets for laser plasma extreme ultraviolet and soft x-ray sources |
| SE510133C2 (sv) | 1996-04-25 | 1999-04-19 | Jettec Ab | Laser-plasma röntgenkälla utnyttjande vätskor som strålmål |
| US6377651B1 (en) | 1999-10-11 | 2002-04-23 | University Of Central Florida | Laser plasma source for extreme ultraviolet lithography using a water droplet target |
| US6324256B1 (en) | 2000-08-23 | 2001-11-27 | Trw Inc. | Liquid sprays as the target for a laser-plasma extreme ultraviolet light source |
-
2002
- 2002-05-28 US US10/157,222 patent/US6792076B2/en not_active Expired - Fee Related
-
2003
- 2003-05-20 DE DE60311350T patent/DE60311350T2/de not_active Expired - Lifetime
- 2003-05-20 EP EP03011056A patent/EP1367867B1/en not_active Expired - Lifetime
- 2003-05-28 JP JP2003150266A patent/JP4340780B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DE60311350D1 (de) | 2007-03-15 |
| US6792076B2 (en) | 2004-09-14 |
| US20030223541A1 (en) | 2003-12-04 |
| EP1367867A1 (en) | 2003-12-03 |
| JP2004111907A (ja) | 2004-04-08 |
| EP1367867B1 (en) | 2007-01-24 |
| JP4340780B2 (ja) | 2009-10-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |