DE60310932T2 - Verfahren zur behandlung von chloride, bromide und jodide der seltenen erden in einem kohlstoffhaltigen tiegel - Google Patents

Verfahren zur behandlung von chloride, bromide und jodide der seltenen erden in einem kohlstoffhaltigen tiegel Download PDF

Info

Publication number
DE60310932T2
DE60310932T2 DE60310932T DE60310932T DE60310932T2 DE 60310932 T2 DE60310932 T2 DE 60310932T2 DE 60310932 T DE60310932 T DE 60310932T DE 60310932 T DE60310932 T DE 60310932T DE 60310932 T2 DE60310932 T2 DE 60310932T2
Authority
DE
Germany
Prior art keywords
rare earth
composition
crucible
graphite
earth metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60310932T
Other languages
German (de)
English (en)
Other versions
DE60310932D1 (de
Inventor
Alain Iltis
Vladimir Ouspenski
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Luxium Solutions SAS
Original Assignee
Saint Gobain Cristaux and Detecteurs SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saint Gobain Cristaux and Detecteurs SAS filed Critical Saint Gobain Cristaux and Detecteurs SAS
Publication of DE60310932D1 publication Critical patent/DE60310932D1/de
Application granted granted Critical
Publication of DE60310932T2 publication Critical patent/DE60310932T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/12Halides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
  • Crucibles And Fluidized-Bed Furnaces (AREA)
  • Luminescent Compositions (AREA)
DE60310932T 2002-06-12 2003-06-11 Verfahren zur behandlung von chloride, bromide und jodide der seltenen erden in einem kohlstoffhaltigen tiegel Expired - Lifetime DE60310932T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0207187A FR2840926B1 (fr) 2002-06-12 2002-06-12 Utilisation d'un creuset comprenant du carbone pour la croissance de cristaux comprenant un halogenure de terre rare
FR0207187 2002-06-12
PCT/FR2003/001735 WO2003106741A2 (fr) 2002-06-12 2003-06-11 Procede de manipulation d'un chlorure ou bromure ou iodure de terre rare dans un creuset comprenant du carbone

Publications (2)

Publication Number Publication Date
DE60310932D1 DE60310932D1 (de) 2007-02-15
DE60310932T2 true DE60310932T2 (de) 2007-10-11

Family

ID=29595156

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60310932T Expired - Lifetime DE60310932T2 (de) 2002-06-12 2003-06-11 Verfahren zur behandlung von chloride, bromide und jodide der seltenen erden in einem kohlstoffhaltigen tiegel

Country Status (14)

Country Link
US (1) US7332028B2 (zh)
EP (1) EP1516078B1 (zh)
JP (1) JP4584710B2 (zh)
CN (1) CN1311106C (zh)
AT (1) ATE350518T1 (zh)
AU (1) AU2003255657B2 (zh)
CA (1) CA2489234A1 (zh)
DE (1) DE60310932T2 (zh)
FR (1) FR2840926B1 (zh)
IL (2) IL165345A0 (zh)
PL (1) PL206640B1 (zh)
RU (1) RU2324021C2 (zh)
UA (1) UA81766C2 (zh)
WO (1) WO2003106741A2 (zh)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL1014401C2 (nl) * 2000-02-17 2001-09-04 Stichting Tech Wetenschapp Ceriumhoudend anorganisch scintillatormateriaal.
FR2847594B1 (fr) * 2002-11-27 2004-12-24 Saint Gobain Cristaux Detecteu Preparation de blocs d'halogenure de terre rare
FR2855830B1 (fr) * 2003-06-05 2005-07-08 Stichting Tech Wetenschapp Cristaux scintillateurs du type iodure de terre rare
US7129494B2 (en) * 2003-09-24 2006-10-31 Radiation Monitoring Devices, Inc. Very fast doped LaBr3 scintillators and time-of-flight PET
US7329874B2 (en) * 2003-09-24 2008-02-12 Radiation Monitoring Devices, Inc. Lu1-xI3:Cex-a scintillator for gamma-ray spectroscopy and time-of-flight pet
US7084403B2 (en) * 2003-10-17 2006-08-01 General Electric Company Scintillator compositions, and related processes and articles of manufacture
FR2869115B1 (fr) * 2004-04-14 2006-05-26 Saint Gobain Cristaux Detecteu Materiau scintillateur a base de terre rare a bruit de fond nucleaire reduit
US20060018566A1 (en) * 2004-07-26 2006-01-26 Coleman Christopher R System and method for adding spatial frequency into an image
US7202477B2 (en) * 2005-03-04 2007-04-10 General Electric Company Scintillator compositions of cerium halides, and related articles and processes
JP5249032B2 (ja) * 2005-09-16 2013-07-31 スティヒテング フォール デ テフニシェ ウェテンシャッペン 高光収率高速シンチレーター
US7541589B2 (en) * 2006-06-30 2009-06-02 General Electric Company Scintillator compositions based on lanthanide halides, and related methods and articles
US7767975B2 (en) * 2007-12-04 2010-08-03 Saint-Gobain Cristaux Et Detecteurs Ionizing radiation detector
US20090146065A1 (en) * 2007-12-07 2009-06-11 General Electric Company Scintillator materials based on lanthanide silicates or lanthanide phosphates, and related methods and articles
FR2929296B1 (fr) * 2008-03-31 2011-01-21 Saint Gobain Cristaux Detecteurs Recuit de monocristaux
US20100224798A1 (en) * 2008-09-11 2010-09-09 Stichting Voor De Technische Wetenschappen Scintillator based on lanthanum iodide and lanthanum bromide
US20110085957A1 (en) * 2009-10-09 2011-04-14 Johann-Christoph Von Saldern Process for producing scintillation materials of low strain birefringence and high refractive index uniformity
FR2954760B1 (fr) 2009-12-28 2013-12-27 Saint Gobain Cristaux Et Detecteurs Scintillateur en halogenure de terre rare cristallin a face sensible polie
US8912498B2 (en) * 2010-05-10 2014-12-16 University Of Tennessee Research Foundation Halide scintillator for radiation detection
US20120097092A1 (en) * 2010-10-20 2012-04-26 Meng Zhu Apparatus for growing single crystals
FR2978251B1 (fr) 2011-07-19 2014-04-18 Saint Gobain Cristaux Et Detecteurs Detecteur a scintillateur conique
FR3004467B1 (fr) 2013-04-12 2016-05-27 Saint-Gobain Cristaux Et Detecteurs Fabrication d'une elpasolite stoechiometrique
FR3022555B1 (fr) 2014-06-23 2017-12-22 Saint-Gobain Cristaux Et Detecteurs Materiau luminescent a couche photonique texturee
KR20180107216A (ko) 2016-03-04 2018-10-01 콘티넨탈 테베스 아게 운트 코. 오하게 모터사이클의 롤 각도를 결정하는 방법
CN107215887B (zh) * 2017-06-09 2018-05-04 厦门中烁光电科技有限公司 无水溴化铈的制备方法
CN109988577B (zh) * 2017-12-27 2020-12-25 有研稀土新材料股份有限公司 稀土卤化物闪烁材料及其应用
EP3737732B1 (fr) 2018-01-11 2022-06-01 Stichting voor de Technische Wetenschappen Matériau scintillateur comprenant un halogémure d'alcalino-terreuxcristallin dopé par un activateur et co-dopé par sm2+
CN111186853B (zh) * 2018-10-26 2021-02-09 北京梦晖科技有限公司 一种稀土卤化物的制备方法
JP7364804B2 (ja) 2020-04-14 2023-10-18 サン-ゴバン セラミックス アンド プラスティクス,インコーポレイティド イオン伝導性材料、イオン伝導性材料を含む電解質、およびその形成方法
KR102468903B1 (ko) 2020-04-14 2022-11-22 세인트-고바인 세라믹스 앤드 플라스틱스, 인크. 전해질 재료 및 형성 방법
KR20230165869A (ko) 2020-08-07 2023-12-05 세인트-고바인 세라믹스 앤드 플라스틱스, 인크. 전해질 재료 및 형성 방법
FR3114104A1 (fr) 2020-09-15 2022-03-18 Saint-Gobain Cristaux Et Detecteurs Matériau scintillateur comprenant une pérovskite d’halogénure dopée
RU2762083C1 (ru) * 2021-02-01 2021-12-15 Федеральное государственное бюджетное учреждение "Национальный исследовательский центр "Курчатовский институт" Способ получения кристаллического сцинтиллятора на основе самоактивированного редкоземельного галогенида
WO2022246406A1 (en) 2021-05-17 2022-11-24 Saint-Gobain Ceramics & Plastics, Inc. Electrolyte material and methods of forming

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3959442A (en) * 1974-03-07 1976-05-25 Hughes Aircraft Company Preparing single crystals of Li(Ho,Y,Er,Tm,Dy)F4 in HF atmosphere
US4251315A (en) * 1976-11-19 1981-02-17 Hughes Aircraft Company Method of growing metal halide and chalcogenide crystals for use as infrared windows
JPH03285898A (ja) * 1990-04-02 1991-12-17 Nikko Kyodo Co Ltd フッ化イットリウムリチウム系単結晶の製造方法
DE4443001A1 (de) * 1993-12-03 1995-06-08 Tosoh Corp Sm·2·+ als aktive Ionen enthaltender Kristall vom fehlgeordneten Fluorit-Typ zum photochemischen Lochbrennen
JPH07157395A (ja) * 1993-12-03 1995-06-20 Tosoh Corp 光化学ホールバーニング結晶及びその製造法
US5911824A (en) * 1997-12-16 1999-06-15 Saint-Gobain Industrial Ceramics, Inc. Method for growing crystal
NL1014401C2 (nl) 2000-02-17 2001-09-04 Stichting Tech Wetenschapp Ceriumhoudend anorganisch scintillatormateriaal.
FR2847594B1 (fr) 2002-11-27 2004-12-24 Saint Gobain Cristaux Detecteu Preparation de blocs d'halogenure de terre rare

Also Published As

Publication number Publication date
CA2489234A1 (fr) 2003-12-24
EP1516078B1 (fr) 2007-01-03
IL165345A (en) 2007-10-31
CN1311106C (zh) 2007-04-18
PL206640B1 (pl) 2010-09-30
CN1659318A (zh) 2005-08-24
FR2840926A1 (fr) 2003-12-19
FR2840926B1 (fr) 2005-03-04
UA81766C2 (uk) 2008-02-11
AU2003255657A1 (en) 2003-12-31
PL371976A1 (en) 2005-07-11
DE60310932D1 (de) 2007-02-15
RU2005100043A (ru) 2005-06-10
AU2003255657B2 (en) 2009-07-02
WO2003106741A2 (fr) 2003-12-24
EP1516078A2 (fr) 2005-03-23
JP4584710B2 (ja) 2010-11-24
US20050188914A1 (en) 2005-09-01
RU2324021C2 (ru) 2008-05-10
IL165345A0 (en) 2006-01-15
US7332028B2 (en) 2008-02-19
ATE350518T1 (de) 2007-01-15
WO2003106741A3 (fr) 2004-04-15
JP2005529058A (ja) 2005-09-29

Similar Documents

Publication Publication Date Title
DE60310932T2 (de) Verfahren zur behandlung von chloride, bromide und jodide der seltenen erden in einem kohlstoffhaltigen tiegel
DE60320135T2 (de) Herstellung von blockformen aus einem seltenerdhalogenid, dadurch hergestellte blockformen, ihre verwendung zur herstellung von einkristallen und dadurch hergestellte einkristalle
DE69331300T2 (de) Verfahren zur Abscheidung aus der Gasphase von einem Fluorid-Glasfilm auf einem Substrat
DE102011050767B4 (de) Züchtungsverfahren für einen Einkristall-Szintillator-Werkstoff auf der Basis von Oxysilikaten und nach dem Verfahren hergestellter Einkirstall-Szintillator-Werkstoff
DE69609907T2 (de) Verfahren zur Herstellung fehlerfreier Einkristalle mit grösserer Ausbringung
DE112005002674T5 (de) Verfahren zum Reinigen von alkalischen Erdhalogeniden und Erdalkalihalogeniden für Kristallwachstum
EP2133449B1 (en) Iodide single crystal, method for production the iodide single crystal, and scintillator comprising the iodide single crystal
CN113200681B (zh) 一种固化含钼高放核废的萤石基玻璃陶瓷基材的制备方法
DE10139648A1 (de) Verfahren zur Herstellung eines Quarzglastiegels
DE68902769T2 (de) Verfahren zur herstellung von seltenerdboriden.
DE2038932B2 (de) Verfahren zur herstellung einer luminiszierenden fluorverbindung
DE102009046303B4 (de) CaF2-Kristall und optisches Element für einen Laser mit verbesserterLaserbeständigkeit umfassend denselben
JP2004531444A (ja) フッ化物単結晶の調製方法
US6824608B2 (en) Seed crystal for epitaxial growth of single-crystal calcium fluoride
JP3168294B2 (ja) フツ化バリウムリチウム単結晶およびその製造方法
CN101688117B (zh) 单晶闪烁体材料及其制造方法
Kinsman et al. Preparation and purification of metal fluorides for crystals and glasses
DE2528585C3 (de) Verfahren zur Herstellung von dotierten a -Aluminiumoxid-Einkristallen
DE1302312B (zh)
JP3062753B1 (ja) フッ化物バルク単結晶の製造方法
KR20050010513A (ko) 탄소를 포함하는 도가니에서 염화, 브롬화 또는 요오드화희토류를 조정하는 방법
Chen Relationship between crystal growth, structure and spectral characteristics of NdAl3 (BO3) 4 with order-disorder structure
JP4839634B2 (ja) シンチレータの製造方法及びシンチレータ
JPH0710694A (ja) テルビウムアルミネート並びにその製法
JP4427217B2 (ja) 真空紫外用の光学部材のためのフッ化バリウム単結晶体およびその製造方法

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: BOCKHORNI & KOLLEGEN, 80687 MUENCHEN