DE60309461D1 - Ferroelektrischer speicher - Google Patents

Ferroelektrischer speicher

Info

Publication number
DE60309461D1
DE60309461D1 DE60309461T DE60309461T DE60309461D1 DE 60309461 D1 DE60309461 D1 DE 60309461D1 DE 60309461 T DE60309461 T DE 60309461T DE 60309461 T DE60309461 T DE 60309461T DE 60309461 D1 DE60309461 D1 DE 60309461D1
Authority
DE
Germany
Prior art keywords
cell
bit lines
bit
memory
line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60309461T
Other languages
English (en)
Other versions
DE60309461T2 (de
Inventor
Tom Ho
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Symetrix Corp
Iota Technology Inc
Original Assignee
Symetrix Corp
Iota Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Symetrix Corp, Iota Technology Inc filed Critical Symetrix Corp
Application granted granted Critical
Publication of DE60309461D1 publication Critical patent/DE60309461D1/de
Publication of DE60309461T2 publication Critical patent/DE60309461T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Inorganic Insulating Materials (AREA)
DE60309461T 2002-05-06 2003-05-05 Ferroelektrischer speicher Expired - Fee Related DE60309461T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US139426 2002-05-06
US10/139,426 US6809949B2 (en) 2002-05-06 2002-05-06 Ferroelectric memory
PCT/US2003/014015 WO2003096352A2 (en) 2002-05-06 2003-05-05 Ferroelectric memory

Publications (2)

Publication Number Publication Date
DE60309461D1 true DE60309461D1 (de) 2006-12-14
DE60309461T2 DE60309461T2 (de) 2007-09-20

Family

ID=29269544

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60309461T Expired - Fee Related DE60309461T2 (de) 2002-05-06 2003-05-05 Ferroelektrischer speicher

Country Status (11)

Country Link
US (2) US6809949B2 (de)
EP (1) EP1502265B1 (de)
JP (1) JP2005530283A (de)
KR (1) KR20050025176A (de)
CN (1) CN100533590C (de)
AT (1) ATE344525T1 (de)
AU (1) AU2003225292A1 (de)
DE (1) DE60309461T2 (de)
HK (1) HK1081320A1 (de)
TW (1) TWI301271B (de)
WO (1) WO2003096352A2 (de)

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US6822891B1 (en) * 2003-06-16 2004-11-23 Kabushiki Kaisha Toshiba Ferroelectric memory device
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KR100849794B1 (ko) 2007-07-04 2008-07-31 주식회사 하이닉스반도체 강유전체 소자를 적용한 반도체 메모리 장치
KR100866705B1 (ko) * 2007-07-04 2008-11-03 주식회사 하이닉스반도체 강유전체 소자를 적용한 반도체 메모리 장치
JP2009043307A (ja) * 2007-08-06 2009-02-26 Toshiba Corp 半導体記憶装置
US7920404B2 (en) * 2007-12-31 2011-04-05 Texas Instruments Incorporated Ferroelectric memory devices with partitioned platelines
US8130559B1 (en) 2008-08-06 2012-03-06 Altera Corporation MEMS switching device and conductive bridge device based circuits
US7898837B2 (en) * 2009-07-22 2011-03-01 Texas Instruments Incorporated F-SRAM power-off operation
CN101819811B (zh) * 2010-03-31 2013-10-16 清华大学 三值铁电存储器电路
JP6030298B2 (ja) * 2010-12-28 2016-11-24 株式会社半導体エネルギー研究所 緩衝記憶装置及び信号処理回路
JP5673414B2 (ja) * 2011-07-20 2015-02-18 富士通セミコンダクター株式会社 半導体装置の製造方法
US8756558B2 (en) * 2012-03-30 2014-06-17 Texas Instruments Incorporated FRAM compiler and layout
US20140029326A1 (en) * 2012-07-26 2014-01-30 Texas Instruments Incorporated Ferroelectric random access memory with a non-destructive read
KR102330412B1 (ko) * 2014-04-25 2021-11-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 전자 부품, 및 전자 기기
US9767879B2 (en) * 2015-02-17 2017-09-19 Texas Instruments Incorporated Setting of reference voltage for data sensing in ferroelectric memories
US9460770B1 (en) * 2015-09-01 2016-10-04 Micron Technology, Inc. Methods of operating ferroelectric memory cells, and related ferroelectric memory cells
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US9786347B1 (en) 2016-03-16 2017-10-10 Micron Technology, Inc. Cell-specific reference generation and sensing
US9721639B1 (en) * 2016-06-21 2017-08-01 Micron Technology, Inc. Memory cell imprint avoidance
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EP3507807A4 (de) 2016-08-31 2020-04-29 Micron Technology, Inc. Vorrichtungen und verfahren mit zweitransistor-einkondensator-speicher und für den zugriff darauf
JP6777369B2 (ja) 2016-08-31 2020-10-28 マイクロン テクノロジー，インク． 強誘電体メモリを含み、強誘電体メモリを動作するための装置及び方法
US10418084B2 (en) 2017-02-07 2019-09-17 Micron Technology, Inc. Pre-writing memory cells of an array
JP6915372B2 (ja) * 2017-05-16 2021-08-04 富士通株式会社 メモリセル、メモリモジュール、情報処理装置およびメモリセルのエラー訂正方法
US10867675B2 (en) 2017-07-13 2020-12-15 Micron Technology, Inc. Apparatuses and methods for memory including ferroelectric memory cells and dielectric memory cells
US10032496B1 (en) 2017-07-27 2018-07-24 Micron Technology, Inc. Variable filter capacitance
US10163480B1 (en) * 2017-07-27 2018-12-25 Micron Technology, Inc. Periphery fill and localized capacitance
US10410721B2 (en) * 2017-11-22 2019-09-10 Micron Technology, Inc. Pulsed integrator and memory techniques
DE112018006192B4 (de) * 2017-12-04 2024-10-17 Sony Semiconductor Solutions Corporation Halbleiter-speichervorrichtung, elektronisches gerät und verfahren zum lesen von daten
US10622050B2 (en) * 2018-05-09 2020-04-14 Micron Technology, Inc. Ferroelectric memory plate power reduction
US10825513B2 (en) * 2018-06-26 2020-11-03 Sandisk Technologies Llc Parasitic noise control during sense operations
US11476260B2 (en) 2019-02-27 2022-10-18 Kepler Computing Inc. High-density low voltage non-volatile memory with unidirectional plate-line and bit-line and pillar capacitor
CN110428857B (zh) * 2019-07-09 2021-09-24 清华大学 一种基于滞回特性器件的存储器
CN111292782B (zh) * 2019-10-21 2021-11-02 北京潼荔科技有限公司 非易失性随机存取存储器及存取方法
US11729989B2 (en) * 2020-01-06 2023-08-15 Iu-Meng Tom Ho Depletion mode ferroelectric transistors
US11527277B1 (en) 2021-06-04 2022-12-13 Kepler Computing Inc. High-density low voltage ferroelectric memory bit-cell
US12112792B2 (en) * 2021-08-10 2024-10-08 Micron Technology, Inc. Memory device for wafer-on-wafer formed memory and logic
US11696451B1 (en) 2021-11-01 2023-07-04 Kepler Computing Inc. Common mode compensation for non-linear polar material based 1T1C memory bit-cell
US11482270B1 (en) * 2021-11-17 2022-10-25 Kepler Computing Inc. Pulsing scheme for a ferroelectric memory bit-cell to minimize read or write disturb effect and refresh logic
US12108609B1 (en) 2022-03-07 2024-10-01 Kepler Computing Inc. Memory bit-cell with stacked and folded planar capacitors
US20230395134A1 (en) 2022-06-03 2023-12-07 Kepler Computing Inc. Write disturb mitigation for non-linear polar material based multi-capacitor bit-cell

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Also Published As

Publication number Publication date
TW200400509A (en) 2004-01-01
US6809949B2 (en) 2004-10-26
CN1666293A (zh) 2005-09-07
ATE344525T1 (de) 2006-11-15
US20030206430A1 (en) 2003-11-06
US20040105296A1 (en) 2004-06-03
CN100533590C (zh) 2009-08-26
DE60309461T2 (de) 2007-09-20
EP1502265A2 (de) 2005-02-02
HK1081320A1 (en) 2006-05-12
TWI301271B (en) 2008-09-21
WO2003096352A2 (en) 2003-11-20
WO2003096352A3 (en) 2004-06-24
KR20050025176A (ko) 2005-03-11
US7212427B2 (en) 2007-05-01
AU2003225292A1 (en) 2003-11-11
JP2005530283A (ja) 2005-10-06
AU2003225292A8 (en) 2003-11-11
EP1502265B1 (de) 2006-11-02

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee