ATE344525T1 - Ferroelektrischer speicher - Google Patents
Ferroelektrischer speicherInfo
- Publication number
- ATE344525T1 ATE344525T1 AT03722013T AT03722013T ATE344525T1 AT E344525 T1 ATE344525 T1 AT E344525T1 AT 03722013 T AT03722013 T AT 03722013T AT 03722013 T AT03722013 T AT 03722013T AT E344525 T1 ATE344525 T1 AT E344525T1
- Authority
- AT
- Austria
- Prior art keywords
- cell
- bit lines
- bit
- memory
- line
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 abstract 7
- 230000000295 complement effect Effects 0.000 abstract 2
- 230000001066 destructive effect Effects 0.000 abstract 1
- 230000010287 polarization Effects 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
- Inorganic Insulating Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/139,426 US6809949B2 (en) | 2002-05-06 | 2002-05-06 | Ferroelectric memory |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE344525T1 true ATE344525T1 (de) | 2006-11-15 |
Family
ID=29269544
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT03722013T ATE344525T1 (de) | 2002-05-06 | 2003-05-05 | Ferroelektrischer speicher |
Country Status (11)
Country | Link |
---|---|
US (2) | US6809949B2 (de) |
EP (1) | EP1502265B1 (de) |
JP (1) | JP2005530283A (de) |
KR (1) | KR20050025176A (de) |
CN (1) | CN100533590C (de) |
AT (1) | ATE344525T1 (de) |
AU (1) | AU2003225292A1 (de) |
DE (1) | DE60309461T2 (de) |
HK (1) | HK1081320A1 (de) |
TW (1) | TWI301271B (de) |
WO (1) | WO2003096352A2 (de) |
Families Citing this family (59)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6822891B1 (en) * | 2003-06-16 | 2004-11-23 | Kabushiki Kaisha Toshiba | Ferroelectric memory device |
US7193880B2 (en) * | 2004-06-14 | 2007-03-20 | Texas Instruments Incorporated | Plateline voltage pulsing to reduce storage node disturbance in ferroelectric memory |
JP3970259B2 (ja) * | 2003-09-11 | 2007-09-05 | 三洋電機株式会社 | メモリ |
JP4074279B2 (ja) * | 2003-09-22 | 2008-04-09 | 株式会社東芝 | 半導体集積回路装置、デジタルカメラ、デジタルビデオカメラ、コンピュータシステム、携帯コンピュータシステム、論理可変lsi装置、icカード、ナビゲーションシステム、ロボット、画像表示装置、光ディスク記憶装置 |
KR100583112B1 (ko) * | 2003-11-27 | 2006-05-23 | 주식회사 하이닉스반도체 | 싱글엔디드 센싱 구조를 갖는 불휘발성 강유전체 메모리장치 |
US7099179B2 (en) * | 2003-12-22 | 2006-08-29 | Unity Semiconductor Corporation | Conductive memory array having page mode and burst mode write capability |
US7009864B2 (en) * | 2003-12-29 | 2006-03-07 | Texas Instruments Incorporated | Zero cancellation scheme to reduce plateline voltage in ferroelectric memory |
US20050174841A1 (en) * | 2004-02-05 | 2005-08-11 | Iota Technology, Inc. | Electronic memory with tri-level cell pair |
US7352619B2 (en) * | 2004-02-05 | 2008-04-01 | Iota Technology, Inc. | Electronic memory with binary storage elements |
US7133304B2 (en) * | 2004-03-22 | 2006-11-07 | Texas Instruments Incorporated | Method and apparatus to reduce storage node disturbance in ferroelectric memory |
NO322040B1 (no) * | 2004-04-15 | 2006-08-07 | Thin Film Electronics Asa | Bimodal drift av ferroelektriske og elektrete minneceller og innretninger |
US6970371B1 (en) * | 2004-05-17 | 2005-11-29 | Texas Instruments Incorporated | Reference generator system and methods for reading ferroelectric memory cells using reduced bitline voltages |
US20050274396A1 (en) * | 2004-06-09 | 2005-12-15 | Hong Shih | Methods for wet cleaning quartz surfaces of components for plasma processing chambers |
US7472309B2 (en) * | 2004-12-22 | 2008-12-30 | Intel Corporation | Methods and apparatus to write a file to a nonvolatile memory |
JP5392985B2 (ja) * | 2004-12-28 | 2014-01-22 | スパンション エルエルシー | 半導体装置及びその動作制御方法 |
JP4912016B2 (ja) * | 2005-05-23 | 2012-04-04 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
US20070190670A1 (en) * | 2006-02-10 | 2007-08-16 | Forest Carl A | Method of making ferroelectric and dielectric layered superlattice materials and memories utilizing same |
US7561458B2 (en) * | 2006-12-26 | 2009-07-14 | Texas Instruments Incorporated | Ferroelectric memory array for implementing a zero cancellation scheme to reduce plateline voltage in ferroelectric memory |
KR100866751B1 (ko) * | 2006-12-27 | 2008-11-03 | 주식회사 하이닉스반도체 | 강유전체 소자를 적용한 반도체 메모리 장치 및 그리프레쉬 방법 |
KR100866705B1 (ko) * | 2007-07-04 | 2008-11-03 | 주식회사 하이닉스반도체 | 강유전체 소자를 적용한 반도체 메모리 장치 |
KR100849794B1 (ko) * | 2007-07-04 | 2008-07-31 | 주식회사 하이닉스반도체 | 강유전체 소자를 적용한 반도체 메모리 장치 |
JP2009043307A (ja) * | 2007-08-06 | 2009-02-26 | Toshiba Corp | 半導体記憶装置 |
US7920404B2 (en) * | 2007-12-31 | 2011-04-05 | Texas Instruments Incorporated | Ferroelectric memory devices with partitioned platelines |
US8130559B1 (en) * | 2008-08-06 | 2012-03-06 | Altera Corporation | MEMS switching device and conductive bridge device based circuits |
US7898837B2 (en) * | 2009-07-22 | 2011-03-01 | Texas Instruments Incorporated | F-SRAM power-off operation |
CN101819811B (zh) * | 2010-03-31 | 2013-10-16 | 清华大学 | 三值铁电存储器电路 |
JP6030298B2 (ja) * | 2010-12-28 | 2016-11-24 | 株式会社半導体エネルギー研究所 | 緩衝記憶装置及び信号処理回路 |
JP5673414B2 (ja) * | 2011-07-20 | 2015-02-18 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
US8756558B2 (en) * | 2012-03-30 | 2014-06-17 | Texas Instruments Incorporated | FRAM compiler and layout |
US20140029326A1 (en) * | 2012-07-26 | 2014-01-30 | Texas Instruments Incorporated | Ferroelectric random access memory with a non-destructive read |
KR102330412B1 (ko) * | 2014-04-25 | 2021-11-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 전자 부품, 및 전자 기기 |
US9767879B2 (en) * | 2015-02-17 | 2017-09-19 | Texas Instruments Incorporated | Setting of reference voltage for data sensing in ferroelectric memories |
US9460770B1 (en) * | 2015-09-01 | 2016-10-04 | Micron Technology, Inc. | Methods of operating ferroelectric memory cells, and related ferroelectric memory cells |
US9443576B1 (en) * | 2015-11-09 | 2016-09-13 | Microsoft Technology Licensing, Llc | Josephson magnetic random access memory with an inductive-shunt |
US9786347B1 (en) * | 2016-03-16 | 2017-10-10 | Micron Technology, Inc. | Cell-specific reference generation and sensing |
US9721639B1 (en) * | 2016-06-21 | 2017-08-01 | Micron Technology, Inc. | Memory cell imprint avoidance |
EP3507807A4 (de) | 2016-08-31 | 2020-04-29 | Micron Technology, Inc. | Vorrichtungen und verfahren mit zweitransistor-einkondensator-speicher und für den zugriff darauf |
SG11201901211XA (en) * | 2016-08-31 | 2019-03-28 | Micron Technology Inc | Apparatuses and methods including ferroelectric memory and for accessing ferroelectric memory |
KR102369776B1 (ko) | 2016-08-31 | 2022-03-03 | 마이크론 테크놀로지, 인크. | 강유전 메모리 셀 |
JP6777369B2 (ja) | 2016-08-31 | 2020-10-28 | マイクロン テクノロジー,インク. | 強誘電体メモリを含み、強誘電体メモリを動作するための装置及び方法 |
US10418084B2 (en) * | 2017-02-07 | 2019-09-17 | Micron Technology, Inc. | Pre-writing memory cells of an array |
JP6915372B2 (ja) * | 2017-05-16 | 2021-08-04 | 富士通株式会社 | メモリセル、メモリモジュール、情報処理装置およびメモリセルのエラー訂正方法 |
US10867675B2 (en) | 2017-07-13 | 2020-12-15 | Micron Technology, Inc. | Apparatuses and methods for memory including ferroelectric memory cells and dielectric memory cells |
US10163480B1 (en) * | 2017-07-27 | 2018-12-25 | Micron Technology, Inc. | Periphery fill and localized capacitance |
US10032496B1 (en) | 2017-07-27 | 2018-07-24 | Micron Technology, Inc. | Variable filter capacitance |
US10410721B2 (en) * | 2017-11-22 | 2019-09-10 | Micron Technology, Inc. | Pulsed integrator and memory techniques |
US11139310B2 (en) * | 2017-12-04 | 2021-10-05 | Sony Semiconductor Solutions Corporation | Semiconductor memory device, electronic apparatus, and method of reading data |
US10622050B2 (en) * | 2018-05-09 | 2020-04-14 | Micron Technology, Inc. | Ferroelectric memory plate power reduction |
US10825513B2 (en) * | 2018-06-26 | 2020-11-03 | Sandisk Technologies Llc | Parasitic noise control during sense operations |
US11482529B2 (en) | 2019-02-27 | 2022-10-25 | Kepler Computing Inc. | High-density low voltage non-volatile memory with unidirectional plate-line and bit-line and pillar capacitor |
CN110428857B (zh) * | 2019-07-09 | 2021-09-24 | 清华大学 | 一种基于滞回特性器件的存储器 |
CN111292782B (zh) * | 2019-10-21 | 2021-11-02 | 北京潼荔科技有限公司 | 非易失性随机存取存储器及存取方法 |
US11729989B2 (en) * | 2020-01-06 | 2023-08-15 | Iu-Meng Tom Ho | Depletion mode ferroelectric transistors |
US11527277B1 (en) | 2021-06-04 | 2022-12-13 | Kepler Computing Inc. | High-density low voltage ferroelectric memory bit-cell |
US12112792B2 (en) * | 2021-08-10 | 2024-10-08 | Micron Technology, Inc. | Memory device for wafer-on-wafer formed memory and logic |
US11729995B1 (en) | 2021-11-01 | 2023-08-15 | Kepler Computing Inc. | Common mode compensation for non-linear polar material 1TnC memory bit-cell |
US11482270B1 (en) * | 2021-11-17 | 2022-10-25 | Kepler Computing Inc. | Pulsing scheme for a ferroelectric memory bit-cell to minimize read or write disturb effect and refresh logic |
US12108609B1 (en) | 2022-03-07 | 2024-10-01 | Kepler Computing Inc. | Memory bit-cell with stacked and folded planar capacitors |
US20230395134A1 (en) | 2022-06-03 | 2023-12-07 | Kepler Computing Inc. | Write disturb mitigation for non-linear polar material based multi-capacitor bit-cell |
Family Cites Families (28)
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US4873664A (en) | 1987-02-12 | 1989-10-10 | Ramtron Corporation | Self restoring ferroelectric memory |
US4888733A (en) * | 1988-09-12 | 1989-12-19 | Ramtron Corporation | Non-volatile memory cell and sensing method |
US5038323A (en) * | 1990-03-06 | 1991-08-06 | The United States Of America As Represented By The Secretary Of The Navy | Non-volatile memory cell with ferroelectric capacitor having logically inactive electrode |
US5262982A (en) * | 1991-07-18 | 1993-11-16 | National Semiconductor Corporation | Nondestructive reading of a ferroelectric capacitor |
US5666305A (en) * | 1993-03-29 | 1997-09-09 | Olympus Optical Co., Ltd. | Method of driving ferroelectric gate transistor memory cell |
US5373463A (en) * | 1993-07-06 | 1994-12-13 | Motorola Inc. | Ferroelectric nonvolatile random access memory having drive line segments |
US5406510A (en) * | 1993-07-15 | 1995-04-11 | Symetrix Corporation | Non-volatile memory |
JP3218844B2 (ja) * | 1994-03-22 | 2001-10-15 | 松下電器産業株式会社 | 半導体メモリ装置 |
DE69627724T2 (de) | 1995-08-02 | 2003-10-23 | Matsushita Electric Industrial Co., Ltd. | Ferroelektrischer Speicher mit Rücksetzschaltung |
US5598366A (en) * | 1995-08-16 | 1997-01-28 | Ramtron International Corporation | Ferroelectric nonvolatile random access memory utilizing self-bootstrapping plate line segment drivers |
SG79200A1 (en) | 1995-08-21 | 2001-03-20 | Matsushita Electric Ind Co Ltd | Ferroelectric memory devices and method for testing them |
KR100446120B1 (ko) * | 1996-03-25 | 2004-12-08 | 마츠시타 덴끼 산교 가부시키가이샤 | 강유전체메모리장치 |
US5737260A (en) * | 1996-03-27 | 1998-04-07 | Sharp Kabushiki Kaisha | Dual mode ferroelectric memory reference scheme |
KR100206713B1 (ko) * | 1996-10-09 | 1999-07-01 | 윤종용 | 강유전체 메모리 장치에서의 비파괴적 억세싱 방법 및 그 억세싱 회로 |
US5966318A (en) * | 1996-12-17 | 1999-10-12 | Raytheon Company | Nondestructive readout memory utilizing ferroelectric capacitors isolated from bitlines by buffer amplifiers |
JP3495905B2 (ja) | 1998-02-19 | 2004-02-09 | シャープ株式会社 | 半導体記憶装置 |
KR100268947B1 (ko) * | 1998-04-03 | 2000-10-16 | 김영환 | 비휘발성 강유전체 메모리 및 그의 제어회로 |
KR100281125B1 (ko) | 1998-12-29 | 2001-03-02 | 김영환 | 비휘발성 강유전체 메모리장치 |
KR100363102B1 (ko) * | 1998-07-15 | 2003-02-19 | 주식회사 하이닉스반도체 | 강유전체 메모리 |
US5995407A (en) * | 1998-10-13 | 1999-11-30 | Celis Semiconductor Corporation | Self-referencing ferroelectric memory |
US6147895A (en) * | 1999-06-04 | 2000-11-14 | Celis Semiconductor Corporation | Ferroelectric memory with two ferroelectric capacitors in memory cell and method of operating same |
US6330180B2 (en) * | 2000-03-24 | 2001-12-11 | Fujitsu Limited | Semiconductor memory device with reduced power consumption and with reduced test time |
JP2001319472A (ja) * | 2000-05-10 | 2001-11-16 | Toshiba Corp | 半導体記憶装置 |
EP1325500B1 (de) * | 2000-09-25 | 2005-12-28 | Symetrix Corporation | Ferro-elektrischer speicher und sein betriebsverfahren |
JP2002109875A (ja) * | 2000-09-29 | 2002-04-12 | Nec Corp | 強誘電体容量を用いたシャドーramセル及び不揮発性メモリ装置並びにその制御方法 |
KR100428652B1 (ko) * | 2001-03-28 | 2004-04-29 | 주식회사 하이닉스반도체 | 인접 셀간에 셀 플레이트를 공유하는 강유전체 메모리 소자 |
US6522570B1 (en) * | 2001-12-13 | 2003-02-18 | Micron Technology, Inc. | System and method for inhibiting imprinting of capacitor structures of a memory |
US6873536B2 (en) * | 2002-04-19 | 2005-03-29 | Texas Instruments Incorporated | Shared data buffer in FeRAM utilizing word line direction segmentation |
-
2002
- 2002-05-06 US US10/139,426 patent/US6809949B2/en not_active Expired - Lifetime
-
2003
- 2003-05-05 DE DE60309461T patent/DE60309461T2/de not_active Expired - Fee Related
- 2003-05-05 EP EP03722013A patent/EP1502265B1/de not_active Expired - Lifetime
- 2003-05-05 AT AT03722013T patent/ATE344525T1/de not_active IP Right Cessation
- 2003-05-05 AU AU2003225292A patent/AU2003225292A1/en not_active Abandoned
- 2003-05-05 WO PCT/US2003/014015 patent/WO2003096352A2/en active IP Right Grant
- 2003-05-05 CN CNB038159813A patent/CN100533590C/zh not_active Expired - Fee Related
- 2003-05-05 JP JP2004504239A patent/JP2005530283A/ja active Pending
- 2003-05-05 KR KR1020047017893A patent/KR20050025176A/ko not_active Application Discontinuation
- 2003-05-06 TW TW092112308A patent/TWI301271B/zh not_active IP Right Cessation
- 2003-11-10 US US10/704,847 patent/US7212427B2/en not_active Expired - Lifetime
-
2006
- 2006-01-27 HK HK06101273.0A patent/HK1081320A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CN100533590C (zh) | 2009-08-26 |
TWI301271B (en) | 2008-09-21 |
US20040105296A1 (en) | 2004-06-03 |
EP1502265A2 (de) | 2005-02-02 |
JP2005530283A (ja) | 2005-10-06 |
DE60309461T2 (de) | 2007-09-20 |
DE60309461D1 (de) | 2006-12-14 |
CN1666293A (zh) | 2005-09-07 |
AU2003225292A1 (en) | 2003-11-11 |
US6809949B2 (en) | 2004-10-26 |
US7212427B2 (en) | 2007-05-01 |
WO2003096352A3 (en) | 2004-06-24 |
KR20050025176A (ko) | 2005-03-11 |
US20030206430A1 (en) | 2003-11-06 |
EP1502265B1 (de) | 2006-11-02 |
HK1081320A1 (en) | 2006-05-12 |
TW200400509A (en) | 2004-01-01 |
AU2003225292A8 (en) | 2003-11-11 |
WO2003096352A2 (en) | 2003-11-20 |
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