DE60307304T2 - Fluorfreie metallkomplexe zum chemische gasphasenabscheidung - Google Patents

Fluorfreie metallkomplexe zum chemische gasphasenabscheidung Download PDF

Info

Publication number
DE60307304T2
DE60307304T2 DE60307304T DE60307304T DE60307304T2 DE 60307304 T2 DE60307304 T2 DE 60307304T2 DE 60307304 T DE60307304 T DE 60307304T DE 60307304 T DE60307304 T DE 60307304T DE 60307304 T2 DE60307304 T2 DE 60307304T2
Authority
DE
Germany
Prior art keywords
group
copper
alkyl
silver
different
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60307304T
Other languages
German (de)
English (en)
Other versions
DE60307304D1 (de
Inventor
Pascal Doppelt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Original Assignee
Centre National de la Recherche Scientifique CNRS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS filed Critical Centre National de la Recherche Scientifique CNRS
Application granted granted Critical
Publication of DE60307304D1 publication Critical patent/DE60307304D1/de
Publication of DE60307304T2 publication Critical patent/DE60307304T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F1/00Compounds containing elements of Groups 1 or 11 of the Periodic Table
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F1/00Compounds containing elements of Groups 1 or 11 of the Periodic Table
    • C07F1/005Compounds containing elements of Groups 1 or 11 of the Periodic Table without C-Metal linkages
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F1/00Compounds containing elements of Groups 1 or 11 of the Periodic Table
    • C07F1/08Copper compounds
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02Silicon compounds
    • C07F7/08Compounds having one or more C—Si linkages
    • C07F7/0803Compounds with Si-C or Si-Si linkages

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
DE60307304T 2002-09-30 2003-09-25 Fluorfreie metallkomplexe zum chemische gasphasenabscheidung Expired - Lifetime DE60307304T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0212059 2002-09-30
FR0212059A FR2845088B1 (fr) 2002-09-30 2002-09-30 Nouveaux complexes metalliques exempts de fluor pour le depot chimique de metaux en phase gazeuse
PCT/FR2003/002820 WO2004029061A1 (fr) 2002-09-30 2003-09-25 Complexes metalliques exempts de fluor pour le depot chimique de metaux en phase gazeuse

Publications (2)

Publication Number Publication Date
DE60307304D1 DE60307304D1 (de) 2006-09-14
DE60307304T2 true DE60307304T2 (de) 2007-10-11

Family

ID=31985326

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60307304T Expired - Lifetime DE60307304T2 (de) 2002-09-30 2003-09-25 Fluorfreie metallkomplexe zum chemische gasphasenabscheidung

Country Status (9)

Country Link
US (1) US7238820B2 (enExample)
EP (1) EP1551851B1 (enExample)
JP (1) JP4634800B2 (enExample)
AT (1) ATE334990T1 (enExample)
AU (1) AU2003276374A1 (enExample)
CA (1) CA2500386C (enExample)
DE (1) DE60307304T2 (enExample)
FR (1) FR2845088B1 (enExample)
WO (1) WO2004029061A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8758867B2 (en) * 2007-09-17 2014-06-24 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés George Claude Neutral ligand containing precursors and methods for deposition of a metal containing film
CN103839604A (zh) * 2014-02-26 2014-06-04 京东方科技集团股份有限公司 导电膜及其制备方法、阵列基板
JP7497022B2 (ja) * 2020-06-24 2024-06-10 国立研究開発法人産業技術総合研究所 アルキニルシランの製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5085731A (en) * 1991-02-04 1992-02-04 Air Products And Chemicals, Inc. Volatile liquid precursors for the chemical vapor deposition of copper
FR2760743B1 (fr) * 1997-03-13 1999-07-23 Centre Nat Rech Scient Nouveaux precurseurs de cuivre(i) pour depot chimique en phase gazeuse de cuivre metallique
US6838573B1 (en) * 2004-01-30 2005-01-04 Air Products And Chemicals, Inc. Copper CVD precursors with enhanced adhesion properties

Also Published As

Publication number Publication date
ATE334990T1 (de) 2006-08-15
US7238820B2 (en) 2007-07-03
FR2845088A1 (fr) 2004-04-02
US20060121709A1 (en) 2006-06-08
CA2500386C (fr) 2012-03-13
EP1551851B1 (fr) 2006-08-02
AU2003276374A1 (en) 2004-04-19
CA2500386A1 (fr) 2004-04-08
DE60307304D1 (de) 2006-09-14
JP4634800B2 (ja) 2011-02-16
FR2845088B1 (fr) 2004-12-03
WO2004029061A1 (fr) 2004-04-08
EP1551851A1 (fr) 2005-07-13
JP2006501280A (ja) 2006-01-12

Similar Documents

Publication Publication Date Title
EP1749014B1 (de) Metallkomplexe
DE19982730C2 (de) Tantalamidvorläufer zum Aufbringen von Tantalnitrid auf einem Substrat
DE69111587T2 (de) Verfahren zur CVD von Kupfer.
DE69216021T2 (de) Flüchtige Vorläufer zur chemischen Dampfphasenabscheidung von Kupfer
DE69736054T2 (de) Vorläufer mit einem Alkoxyalkylvinylsilanligand für die Abscheidung von Kupfer und Verfahren hierfür
DE69914092T2 (de) Herstellungsverfahren für ruthenium-metallschichten
US6303809B1 (en) Organometallic ruthenium and osmium source reagents for chemical vapor deposition
EP0342444B1 (de) Cyclische metallorganische Verbindungen
DE102011012515A1 (de) Metallkomplexe mit N-Amino-Amidinat-Liganden
DE10310887A1 (de) Matallkomplexe
EP0260534A1 (de) Metallorganische Verbindungen
EP1757612B1 (de) Tantal- und Niob- Verbindungen und ihre Verwendung für die Chemical Vapour Deposition (CVD)
DE69932560T2 (de) Aluminiumkomplexderivate zur chemischen Vakuumverdampfung und Verfahren zu deren Herstellung
DE112005000134T5 (de) Alkoxidverbindung, Material für die Bildung eines dünnen Films und Verfahren für die Bildung eines dünnen Films
DE69910528T2 (de) Metall-enthaltende 2-Methyl-1-buten-Vorläuferverbindungen und deren Herstellung
DE60307304T2 (de) Fluorfreie metallkomplexe zum chemische gasphasenabscheidung
CN103755747A (zh) 有机金属化合物及其用法
JP3384228B2 (ja) 金属錯体及び金属薄膜形成方法
DE602004006904T2 (de) Neue Wismut-Verbindungen, Verfahren zu ihrer Herstellung und Verfahren zur Herstellung eines Films
US6538147B1 (en) Organocopper precursors for chemical vapor deposition
JP4696454B2 (ja) 新規有機イリジウム化合物、その製造方法、及び膜の製造方法
US6130345A (en) Copper (1) precursors for chemical deposit in gas phase of metallic copper
DE112005000292T5 (de) Metallorganische Verbindungen mit hoher Keimbildungsdichte
DE69932696T2 (de) Allyl-abgeleitete Vorläuferverbindung und deren Herstellung
DE69721472T2 (de) Alkylaminosilylolefin-Ligand enthaltende Vorläuferverbindungen zur Abscheiden von Kupfer

Legal Events

Date Code Title Description
8364 No opposition during term of opposition