AU2003276374A1 - Fluorine-free metallic complexes for gas-phase chemical metal deposition - Google Patents

Fluorine-free metallic complexes for gas-phase chemical metal deposition

Info

Publication number
AU2003276374A1
AU2003276374A1 AU2003276374A AU2003276374A AU2003276374A1 AU 2003276374 A1 AU2003276374 A1 AU 2003276374A1 AU 2003276374 A AU2003276374 A AU 2003276374A AU 2003276374 A AU2003276374 A AU 2003276374A AU 2003276374 A1 AU2003276374 A1 AU 2003276374A1
Authority
AU
Australia
Prior art keywords
gas
fluorine
phase chemical
metal deposition
metallic complexes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003276374A
Other languages
English (en)
Inventor
Pascal Doppelt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Original Assignee
Centre National de la Recherche Scientifique CNRS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS filed Critical Centre National de la Recherche Scientifique CNRS
Publication of AU2003276374A1 publication Critical patent/AU2003276374A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F1/00Compounds containing elements of Groups 1 or 11 of the Periodic Table
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F1/00Compounds containing elements of Groups 1 or 11 of the Periodic Table
    • C07F1/005Compounds containing elements of Groups 1 or 11 of the Periodic Table without C-Metal linkages
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F1/00Compounds containing elements of Groups 1 or 11 of the Periodic Table
    • C07F1/08Copper compounds
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02Silicon compounds
    • C07F7/08Compounds having one or more C—Si linkages
    • C07F7/0803Compounds with Si-C or Si-Si linkages

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
AU2003276374A 2002-09-30 2003-09-25 Fluorine-free metallic complexes for gas-phase chemical metal deposition Abandoned AU2003276374A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR02/12059 2002-09-30
FR0212059A FR2845088B1 (fr) 2002-09-30 2002-09-30 Nouveaux complexes metalliques exempts de fluor pour le depot chimique de metaux en phase gazeuse
PCT/FR2003/002820 WO2004029061A1 (fr) 2002-09-30 2003-09-25 Complexes metalliques exempts de fluor pour le depot chimique de metaux en phase gazeuse

Publications (1)

Publication Number Publication Date
AU2003276374A1 true AU2003276374A1 (en) 2004-04-19

Family

ID=31985326

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003276374A Abandoned AU2003276374A1 (en) 2002-09-30 2003-09-25 Fluorine-free metallic complexes for gas-phase chemical metal deposition

Country Status (9)

Country Link
US (1) US7238820B2 (enExample)
EP (1) EP1551851B1 (enExample)
JP (1) JP4634800B2 (enExample)
AT (1) ATE334990T1 (enExample)
AU (1) AU2003276374A1 (enExample)
CA (1) CA2500386C (enExample)
DE (1) DE60307304T2 (enExample)
FR (1) FR2845088B1 (enExample)
WO (1) WO2004029061A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8758867B2 (en) * 2007-09-17 2014-06-24 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés George Claude Neutral ligand containing precursors and methods for deposition of a metal containing film
CN103839604A (zh) * 2014-02-26 2014-06-04 京东方科技集团股份有限公司 导电膜及其制备方法、阵列基板
JP7497022B2 (ja) * 2020-06-24 2024-06-10 国立研究開発法人産業技術総合研究所 アルキニルシランの製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5085731A (en) * 1991-02-04 1992-02-04 Air Products And Chemicals, Inc. Volatile liquid precursors for the chemical vapor deposition of copper
FR2760743B1 (fr) * 1997-03-13 1999-07-23 Centre Nat Rech Scient Nouveaux precurseurs de cuivre(i) pour depot chimique en phase gazeuse de cuivre metallique
US6838573B1 (en) * 2004-01-30 2005-01-04 Air Products And Chemicals, Inc. Copper CVD precursors with enhanced adhesion properties

Also Published As

Publication number Publication date
ATE334990T1 (de) 2006-08-15
US7238820B2 (en) 2007-07-03
FR2845088A1 (fr) 2004-04-02
US20060121709A1 (en) 2006-06-08
CA2500386C (fr) 2012-03-13
EP1551851B1 (fr) 2006-08-02
CA2500386A1 (fr) 2004-04-08
DE60307304T2 (de) 2007-10-11
DE60307304D1 (de) 2006-09-14
JP4634800B2 (ja) 2011-02-16
FR2845088B1 (fr) 2004-12-03
WO2004029061A1 (fr) 2004-04-08
EP1551851A1 (fr) 2005-07-13
JP2006501280A (ja) 2006-01-12

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase