DE60238324D1 - Waferboot und verfahren zur herstellung eines rutschsicheren waferboots - Google Patents

Waferboot und verfahren zur herstellung eines rutschsicheren waferboots

Info

Publication number
DE60238324D1
DE60238324D1 DE60238324T DE60238324T DE60238324D1 DE 60238324 D1 DE60238324 D1 DE 60238324D1 DE 60238324 T DE60238324 T DE 60238324T DE 60238324 T DE60238324 T DE 60238324T DE 60238324 D1 DE60238324 D1 DE 60238324D1
Authority
DE
Germany
Prior art keywords
wafer
waferboat
safe
producing
contact surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60238324T
Other languages
English (en)
Inventor
Richard R Hengst
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Saint Gobain Ceramics and Plastics Inc
Original Assignee
Saint Gobain Ceramics and Plastics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saint Gobain Ceramics and Plastics Inc filed Critical Saint Gobain Ceramics and Plastics Inc
Application granted granted Critical
Publication of DE60238324D1 publication Critical patent/DE60238324D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/14—Substrate holders or susceptors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H01L21/67306—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by a material, a roughness, a coating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H01L21/67309—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by the substrate support

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Packaging Frangible Articles (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
DE60238324T 2001-06-19 2002-06-05 Waferboot und verfahren zur herstellung eines rutschsicheren waferboots Expired - Lifetime DE60238324D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/884,720 US20020130061A1 (en) 2000-11-02 2001-06-19 Apparatus and method of making a slip free wafer boat
PCT/US2002/017654 WO2002103759A1 (en) 2001-06-19 2002-06-05 Apparatus and method of making a slip free wafer boat

Publications (1)

Publication Number Publication Date
DE60238324D1 true DE60238324D1 (de) 2010-12-30

Family

ID=25385235

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60238324T Expired - Lifetime DE60238324D1 (de) 2001-06-19 2002-06-05 Waferboot und verfahren zur herstellung eines rutschsicheren waferboots

Country Status (8)

Country Link
US (1) US20020130061A1 (de)
EP (1) EP1405333B1 (de)
JP (1) JP2004531891A (de)
KR (1) KR100578709B1 (de)
CN (1) CN100350551C (de)
AT (1) ATE488865T1 (de)
DE (1) DE60238324D1 (de)
WO (1) WO2002103759A1 (de)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6811040B2 (en) * 2001-07-16 2004-11-02 Rohm And Haas Company Wafer holding apparatus
US20030233977A1 (en) * 2002-06-20 2003-12-25 Yeshwanth Narendar Method for forming semiconductor processing components
US7823730B2 (en) * 2002-09-11 2010-11-02 Shin-Etsu Polymer Co., Ltd. Substrate storage container
US6825123B2 (en) * 2003-04-15 2004-11-30 Saint-Goban Ceramics & Plastics, Inc. Method for treating semiconductor processing components and components formed thereby
US20050145584A1 (en) * 2004-01-06 2005-07-07 Buckley Richard F. Wafer boat with interference fit wafer supports
US7501370B2 (en) 2004-01-06 2009-03-10 Saint-Gobain Ceramics & Plastics, Inc. High purity silicon carbide wafer boats
US20050205502A1 (en) * 2004-03-18 2005-09-22 Brown Steven A Rails for semiconductor wafer carriers
JP2005340480A (ja) * 2004-05-26 2005-12-08 Nippon Oil Corp 基板カセット用サポートバー
TWI248909B (en) * 2004-10-12 2006-02-11 Au Optronics Corp A cassette for placing multiple-sized substrate
KR20070120981A (ko) * 2005-03-09 2007-12-26 가부시키가이샤 아이에이치아이 지그
TWI463587B (zh) * 2005-07-08 2014-12-01 Asyst Technologies 工件支撐結構及使用該結構之裝置
US7828158B2 (en) * 2005-07-14 2010-11-09 Displays Plus, Inc. Merchandise dispensing apparatus providing theft deterrence
KR101165466B1 (ko) * 2005-08-31 2012-07-13 엘지디스플레이 주식회사 캐리어 및 이를 구비한 공정 장치
US7547897B2 (en) * 2006-05-26 2009-06-16 Cree, Inc. High-temperature ion implantation apparatus and methods of fabricating semiconductor devices using high-temperature ion implantation
JP2007329476A (ja) * 2006-06-02 2007-12-20 Rohm & Haas Electronic Materials Llc フィレット半径結合部を有する装置
KR20090034833A (ko) * 2006-06-30 2009-04-08 엠이엠씨 일렉트로닉 머티리얼즈, 인크. 웨이퍼 플랫폼
CN101884099B (zh) * 2007-12-20 2012-07-25 圣戈本陶瓷及塑料股份有限公司 用于处理半导体加工部件的方法以及由此形成的部件
KR101039151B1 (ko) 2008-12-23 2011-06-07 주식회사 테라세미콘 보트
US9153466B2 (en) * 2012-04-26 2015-10-06 Asm Ip Holding B.V. Wafer boat
USD734730S1 (en) * 2012-12-27 2015-07-21 Hitachi Kokusai Electric Inc. Boat of substrate processing apparatus
TWD166332S (zh) * 2013-03-22 2015-03-01 日立國際電氣股份有限公司 基板處理裝置用晶舟之部分
TWD163542S (zh) * 2013-03-22 2014-10-11 日立國際電氣股份有限公司 基板處理裝置用晶舟
JP1537630S (de) * 2014-11-20 2015-11-09
JP1537312S (de) * 2014-11-20 2015-11-09
JP1537313S (de) * 2014-11-20 2015-11-09
JP6322159B2 (ja) * 2015-06-10 2018-05-09 クアーズテック株式会社 ウエハボート及びその製造方法
JP1563649S (de) * 2016-02-12 2016-11-21
CN110071064A (zh) * 2018-01-22 2019-07-30 上海新昇半导体科技有限公司 一种改善外延片污染印记的方法
JP7030604B2 (ja) * 2018-04-19 2022-03-07 三菱電機株式会社 ウエハボートおよびその製造方法
USD846514S1 (en) * 2018-05-03 2019-04-23 Kokusai Electric Corporation Boat of substrate processing apparatus
USD847105S1 (en) * 2018-05-03 2019-04-30 Kokusai Electric Corporation Boat of substrate processing apparatus
USD908102S1 (en) * 2019-02-20 2021-01-19 Veeco Instruments Inc. Transportable semiconductor wafer rack
USD908103S1 (en) * 2019-02-20 2021-01-19 Veeco Instruments Inc. Transportable semiconductor wafer rack
CN110211914A (zh) * 2019-07-11 2019-09-06 中威新能源(成都)有限公司 一种半导体制品的承载方法、传输方法、制造方法及其用途
JP7550857B2 (ja) * 2020-07-10 2024-09-13 ミライアル株式会社 基板収納容器
TWI751806B (zh) * 2020-11-25 2022-01-01 松勁科技股份有限公司 立式爐管及用於其之立式晶舟

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3951587A (en) * 1974-12-06 1976-04-20 Norton Company Silicon carbide diffusion furnace components
JPH0774839B2 (ja) * 1991-09-30 1995-08-09 東芝セラミックス株式会社 Ｓｏｒ用ミラー
DE4429825C1 (de) * 1994-08-23 1995-11-09 Heraeus Quarzglas Beschichtetes Bauteil aus Quarzglas
JPH10510680A (ja) * 1995-05-05 1998-10-13 サン−ゴバン インダストリアル セラミックス，インコーポレイティド 滑りのない垂直架台構造
US5904892A (en) * 1996-04-01 1999-05-18 Saint-Gobain/Norton Industrial Ceramics Corp. Tape cast silicon carbide dummy wafer
JPH09306980A (ja) * 1996-05-17 1997-11-28 Asahi Glass Co Ltd 縦型ウエハボート
US5904778A (en) * 1996-07-26 1999-05-18 Applied Materials, Inc. Silicon carbide composite article particularly useful for plasma reactors
JP3686193B2 (ja) * 1996-11-20 2005-08-24 株式会社ブリヂストン 帯状部材のセンタリング方法及び装置
KR100284567B1 (ko) * 1997-04-15 2001-04-02 후지이 아키히로 수직 웨이퍼 보트
JP3494554B2 (ja) * 1997-06-26 2004-02-09 東芝セラミックス株式会社 半導体用治具およびその製造方法
US5931666A (en) * 1998-02-27 1999-08-03 Saint-Gobain Industrial Ceramics, Inc. Slip free vertical rack design having rounded horizontal arms
JP2000119079A (ja) * 1998-08-11 2000-04-25 Toshiba Ceramics Co Ltd 半導体熱処理用Ｓｉ−ＳｉＣ製部材およびその製造方法
US6171400B1 (en) * 1998-10-02 2001-01-09 Union Oil Company Of California Vertical semiconductor wafer carrier
JP2001048667A (ja) * 1999-08-13 2001-02-20 Asahi Glass Co Ltd セラミックス部品の接合方法

Also Published As

Publication number Publication date
CN1518756A (zh) 2004-08-04
CN100350551C (zh) 2007-11-21
ATE488865T1 (de) 2010-12-15
JP2004531891A (ja) 2004-10-14
WO2002103759A1 (en) 2002-12-27
KR20040010727A (ko) 2004-01-31
KR100578709B1 (ko) 2006-05-12
US20020130061A1 (en) 2002-09-19
EP1405333B1 (de) 2010-11-17
EP1405333A4 (de) 2009-05-20
EP1405333A1 (de) 2004-04-07

Similar Documents

Publication Publication Date Title
DE60238324D1 (de) Waferboot und verfahren zur herstellung eines rutschsicheren waferboots
ATE478439T1 (de) Verfahren zur rauhätzung von siliziumsolarzellen
ATE212725T1 (de) Verfahren zur herstellung eines halbleitersensors
DE69937803D1 (de) Verfahren zur herstellung eines czochralski silizium wafers ohne sauerstoffniederschlag
EP1085562A3 (de) Apparat und Methode zur Oberflächenbehandlung von Silizium
DE69731019D1 (de) Verfahren zu Herstellung eines monokristallinen Halbleiterwafers mit hochglanzpolierter Oberfläche, unter Benutzung eines Gasphasen-Ätz- und eines Aufwärm-Schrittes, und durch dieses Verfahren hergestellter Wafer
DE69912712D1 (de) Verbindung und Verfahren zum selektiven Ätzen eines Siliziumnitrid Films
DE50100177D1 (de) Verfahren zur Oberflächenpolitur von Siliciumscheiben
DE19983188T1 (de) Siliziumhalbleitersubstrat und Verfahren zu dessen Herstellung
EP1363322A3 (de) GaN-einkristallines Substrat, epitaktisches Nitrid-Typ-Halbleitersubstrat, Nitrid-Typ-Halbleitervorrichtung und Verfahren zu deren Herstellung
EP0867922A3 (de) Halbleitersubstrat und Verfahren zu dessen Herstellung
EP0362838A3 (de) Verfahren zur Herstellung von Halbleiter-Bauelementen
MY138243A (en) Process for the back-surface grinding of wafers.
ATE333443T1 (de) Verfahren zur behandlung keramischer substrate und dünnfilm-magnetkopf
EP1139693A3 (de) Keramischer Heizer und Verfahren zu dessen Herstellung
EP1398825A3 (de) Substrat und Herstellungsverfahren dafür
WO2001039257A3 (fr) Couche de silicium tres sensible a l'oxygene et procede d'obtention de cette couche
TW330303B (en) Manufacturing method of bonding SOI substrate and bonding SOI substrate
MY122019A (en) Method of manufacturing semiconductor wafer.
JPH0483328A (ja) ウエハチャック
ATE332211T1 (de) Verbindungssystem zum befestigen von halbleiterplatten sowie verfahren zur herstellung von halbleiterplatten
EP1921672A3 (de) Verfahren zur Herstellung eines SOQ-Substrats
EP1286387A3 (de) Methode zur Reduzierung der Photolack-Verunreinigung von Siliziumkarbid-Schichten
JP5179401B2 (ja) 貼り合わせウェーハ及びその製造方法
DE60336090D1 (de) Verfahren zur verbesserung der öberflächenrauhigkeit eines halbleiterwafers