DE60238180D1 - Strukturbildungsverfahren mit einer fotomaske - Google Patents
Strukturbildungsverfahren mit einer fotomaskeInfo
- Publication number
- DE60238180D1 DE60238180D1 DE60238180T DE60238180T DE60238180D1 DE 60238180 D1 DE60238180 D1 DE 60238180D1 DE 60238180 T DE60238180 T DE 60238180T DE 60238180 T DE60238180 T DE 60238180T DE 60238180 D1 DE60238180 D1 DE 60238180D1
- Authority
- DE
- Germany
- Prior art keywords
- photomask
- training process
- structure training
- training
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70125—Use of illumination settings tailored to particular mask patterns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001133802 | 2001-05-01 | ||
JP2002001033A JP3708877B2 (ja) | 2001-05-01 | 2002-01-08 | フォトマスク |
PCT/JP2002/003976 WO2002091079A1 (en) | 2001-05-01 | 2002-04-22 | Photo mask, production method of the same, pattern forming method using the photo mask |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60238180D1 true DE60238180D1 (de) | 2010-12-16 |
Family
ID=26614569
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60238180T Expired - Lifetime DE60238180D1 (de) | 2001-05-01 | 2002-04-22 | Strukturbildungsverfahren mit einer fotomaske |
Country Status (7)
Country | Link |
---|---|
US (3) | US7060395B2 (de) |
EP (1) | EP1365288B1 (de) |
JP (1) | JP3708877B2 (de) |
KR (1) | KR100498681B1 (de) |
DE (1) | DE60238180D1 (de) |
TW (1) | TW538455B (de) |
WO (1) | WO2002091079A1 (de) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7147975B2 (en) | 2003-02-17 | 2006-12-12 | Matsushita Electric Industrial Co., Ltd. | Photomask |
US7033708B2 (en) * | 2003-05-20 | 2006-04-25 | Intel Corporation | Image focus monitor for alternating phase shift masks |
US7842436B2 (en) * | 2003-10-23 | 2010-11-30 | Panasonic Corporation | Photomask |
TW200528756A (en) * | 2004-01-27 | 2005-09-01 | Adv Lcd Tech Dev Ct Co Ltd | Light application apparatus, crystallization apparatus and optical modulation element assembly |
JP4099589B2 (ja) * | 2004-02-20 | 2008-06-11 | ソニー株式会社 | マスクパターン補正方法、露光用マスクおよびマスク製造方法 |
US7438997B2 (en) * | 2004-05-14 | 2008-10-21 | Intel Corporation | Imaging and devices in lithography |
EP2657768B1 (de) | 2004-06-16 | 2020-08-05 | Hoya Corporation | Photomaskenrohling und Photomaske |
JP5106747B2 (ja) * | 2004-10-27 | 2012-12-26 | ルネサスエレクトロニクス株式会社 | パターン形成方法、半導体装置の製造方法及び露光用マスクセット |
US7313780B2 (en) * | 2005-03-10 | 2007-12-25 | Chartered Semiconductor Manufacturing Ltd. | System and method for designing semiconductor photomasks |
US7395516B2 (en) | 2005-05-20 | 2008-07-01 | Cadence Design Systems, Inc. | Manufacturing aware design and design aware manufacturing |
EP1889195A4 (de) * | 2005-05-20 | 2012-09-12 | Cadence Desing Systems Inc | Produktionsbewusstes design und designbewusste produktion |
CN102520577B (zh) * | 2005-08-11 | 2014-10-29 | 富士通半导体股份有限公司 | 曝光用掩模、图案复制方法 |
JP4340319B2 (ja) | 2005-08-11 | 2009-10-07 | 富士通マイクロエレクトロニクス株式会社 | 露光用マスク及びパターン転写方法 |
US7649612B2 (en) * | 2006-01-27 | 2010-01-19 | Chartered Semiconductor Manufacturing Ltd. | Phase shifting photolithography system |
KR20080107242A (ko) * | 2006-03-06 | 2008-12-10 | 파나소닉 주식회사 | 포토마스크, 그 작성방법, 그 포토마스크를 이용한패턴형성방법 및 마스크데이터 작성방법 |
JP4816349B2 (ja) * | 2006-09-08 | 2011-11-16 | 大日本印刷株式会社 | 階調マスク |
JP2008089923A (ja) * | 2006-09-29 | 2008-04-17 | Oki Electric Ind Co Ltd | 光学素子の製造方法 |
JP4896671B2 (ja) * | 2006-11-06 | 2012-03-14 | 三菱電機株式会社 | ハーフトーンマスク及びこれを用いたパターン基板の製造方法 |
JP2009053575A (ja) * | 2007-08-29 | 2009-03-12 | Panasonic Corp | フォトマスク及びそれを用いたパターン形成方法 |
JP2009058877A (ja) * | 2007-09-03 | 2009-03-19 | Panasonic Corp | フォトマスク及びそれを用いたパターン形成方法 |
JP2009075207A (ja) * | 2007-09-19 | 2009-04-09 | Panasonic Corp | フォトマスク及びそれを用いたパターン形成方法 |
JP2009231769A (ja) * | 2008-03-25 | 2009-10-08 | Toshiba Corp | 投影露光方法 |
KR101044349B1 (ko) * | 2008-05-19 | 2011-06-29 | 최병열 | 체중 답력을 동력원으로 하는 런닝머신 |
CN102402122B (zh) * | 2010-09-07 | 2013-09-18 | 无锡华润上华半导体有限公司 | 光刻机漏光检测方法及系统 |
US20130126467A1 (en) * | 2011-11-18 | 2013-05-23 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Method for manufacturing conductive lines with small line-to-line space |
US8856695B1 (en) * | 2013-03-14 | 2014-10-07 | Samsung Electronics Co., Ltd. | Method for generating post-OPC layout in consideration of top loss of etch mask layer |
KR20150028109A (ko) * | 2013-09-05 | 2015-03-13 | 삼성디스플레이 주식회사 | 노광용 마스크, 이의 제조방법 및 이를 이용한 표시패널의 제조방법 |
JP2015064404A (ja) * | 2013-09-24 | 2015-04-09 | 株式会社エスケーエレクトロニクス | 位相シフトマスク及びその製造方法 |
CN104102094B (zh) * | 2014-06-27 | 2015-12-02 | 京东方科技集团股份有限公司 | 掩模挡板及其制造方法 |
JP6418606B2 (ja) * | 2015-08-07 | 2018-11-07 | 東芝メモリ株式会社 | パターン輪郭抽出装置、パターン輪郭抽出方法およびパターン輪郭抽出プログラム |
JP6598673B2 (ja) * | 2015-12-24 | 2019-10-30 | キヤノン株式会社 | データ処理装置およびその方法 |
TWI755723B (zh) * | 2020-05-05 | 2022-02-21 | 力晶積成電子製造股份有限公司 | 圖案化方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03177841A (ja) | 1989-12-06 | 1991-08-01 | Oki Electric Ind Co Ltd | ネガ型レジスト用ホトマスク |
EP0401795A3 (de) * | 1989-06-08 | 1991-03-27 | Oki Electric Industry Company, Limited | Phasenverschiebungs-Photomaske für negative Lacke und Verfahren zur Herstellung von isolierten negativen Resistbildern mit dieser Phasenverschiebungsmaske |
JPH0311345A (ja) | 1989-06-08 | 1991-01-18 | Oki Electric Ind Co Ltd | ホトマスク及びこれを用いたパターン形成方法 |
JP3110855B2 (ja) | 1992-04-22 | 2000-11-20 | 株式会社東芝 | 投影露光用基板の製造方法とこの基板を用いたパターン形成方法 |
JPH05297566A (ja) | 1992-04-22 | 1993-11-12 | Toshiba Corp | 露光用マスクの製造方法 |
US5718829A (en) | 1995-09-01 | 1998-02-17 | Micron Technology, Inc. | Phase shift structure and method of fabrication |
JPH09115809A (ja) | 1995-10-19 | 1997-05-02 | Fujitsu Ltd | 投影露光用光学マスクおよび投影露光方法 |
JP2917879B2 (ja) | 1995-10-31 | 1999-07-12 | 日本電気株式会社 | フォトマスク及びその製造方法 |
JPH09127676A (ja) | 1995-11-06 | 1997-05-16 | Seiko Epson Corp | ホトマスク及び半導体装置の製造方法 |
JP2000010255A (ja) | 1998-06-19 | 2000-01-14 | Toppan Printing Co Ltd | ハーフトーン型位相シフトマスク、ハーフトーン型位相シフトマスク用ブランク及びハーフトーン型位相シフトマスクの製造方法 |
JP3466488B2 (ja) * | 1998-09-29 | 2003-11-10 | シャープ株式会社 | フォトマスク |
EP1542073A3 (de) | 1999-11-08 | 2009-02-18 | Panasonic Corporation | Strukturierungsverfahren |
-
2002
- 2002-01-08 JP JP2002001033A patent/JP3708877B2/ja not_active Expired - Fee Related
- 2002-04-22 EP EP02720545A patent/EP1365288B1/de not_active Expired - Lifetime
- 2002-04-22 KR KR10-2002-7018066A patent/KR100498681B1/ko not_active IP Right Cessation
- 2002-04-22 US US10/399,762 patent/US7060395B2/en not_active Expired - Fee Related
- 2002-04-22 DE DE60238180T patent/DE60238180D1/de not_active Expired - Lifetime
- 2002-04-22 WO PCT/JP2002/003976 patent/WO2002091079A1/ja active IP Right Grant
- 2002-04-25 TW TW091108534A patent/TW538455B/zh not_active IP Right Cessation
-
2005
- 2005-12-12 US US11/298,741 patent/US7361436B2/en not_active Expired - Fee Related
-
2006
- 2006-04-04 US US11/396,564 patent/US7364822B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1365288A1 (de) | 2003-11-26 |
EP1365288A4 (de) | 2008-05-21 |
EP1365288B1 (de) | 2010-11-03 |
US20040029023A1 (en) | 2004-02-12 |
US7060395B2 (en) | 2006-06-13 |
TW538455B (en) | 2003-06-21 |
US7361436B2 (en) | 2008-04-22 |
JP2003021891A (ja) | 2003-01-24 |
US20060177747A1 (en) | 2006-08-10 |
US7364822B2 (en) | 2008-04-29 |
KR20030076244A (ko) | 2003-09-26 |
JP3708877B2 (ja) | 2005-10-19 |
WO2002091079A1 (en) | 2002-11-14 |
KR100498681B1 (ko) | 2005-07-01 |
US20060121366A1 (en) | 2006-06-08 |
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