DE60235813D1 - Verfahren und vorrichtung für mikrojet aktivierte, niederenergetische ionen-erzeugung und -transport in der plasmabehandlung - Google Patents

Verfahren und vorrichtung für mikrojet aktivierte, niederenergetische ionen-erzeugung und -transport in der plasmabehandlung

Info

Publication number
DE60235813D1
DE60235813D1 DE60235813T DE60235813T DE60235813D1 DE 60235813 D1 DE60235813 D1 DE 60235813D1 DE 60235813 T DE60235813 T DE 60235813T DE 60235813 T DE60235813 T DE 60235813T DE 60235813 D1 DE60235813 D1 DE 60235813D1
Authority
DE
Germany
Prior art keywords
nerenergetic
microjet
activated
transport
plasma treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60235813T
Other languages
English (en)
Inventor
Aseem Srivastava
Palani Sakthivel
Herbert Sawin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Axcelis Technologies Inc
Original Assignee
Axcelis Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Axcelis Technologies Inc filed Critical Axcelis Technologies Inc
Application granted granted Critical
Publication of DE60235813D1 publication Critical patent/DE60235813D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
DE60235813T 2001-07-13 2002-07-12 Verfahren und vorrichtung für mikrojet aktivierte, niederenergetische ionen-erzeugung und -transport in der plasmabehandlung Expired - Lifetime DE60235813D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/905,043 US6761796B2 (en) 2001-04-06 2001-07-13 Method and apparatus for micro-jet enabled, low-energy ion generation transport in plasma processing
PCT/US2002/023232 WO2003007326A2 (en) 2001-07-13 2002-07-12 Method and apparatus for micro-jet enabled, low energy ion generation and transport in plasma processing

Publications (1)

Publication Number Publication Date
DE60235813D1 true DE60235813D1 (de) 2010-05-12

Family

ID=25420214

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60235813T Expired - Lifetime DE60235813D1 (de) 2001-07-13 2002-07-12 Verfahren und vorrichtung für mikrojet aktivierte, niederenergetische ionen-erzeugung und -transport in der plasmabehandlung

Country Status (9)

Country Link
US (2) US6761796B2 (de)
EP (1) EP1410418B1 (de)
JP (1) JP5041114B2 (de)
KR (1) KR100971559B1 (de)
CN (1) CN100474495C (de)
AU (1) AU2002313697A1 (de)
DE (1) DE60235813D1 (de)
TW (1) TW559988B (de)
WO (1) WO2003007326A2 (de)

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WO2003007326A2 (en) 2003-01-23
KR20040021621A (ko) 2004-03-10
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AU2002313697A1 (en) 2003-01-29
CN1554106A (zh) 2004-12-08
CN100474495C (zh) 2009-04-01
US20040140053A1 (en) 2004-07-22
US7037846B2 (en) 2006-05-02
KR100971559B1 (ko) 2010-07-20
TW559988B (en) 2003-11-01
JP2004535672A (ja) 2004-11-25
WO2003007326A3 (en) 2003-12-11

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