DE60233377D1 - Pegelschieber - Google Patents
PegelschieberInfo
- Publication number
- DE60233377D1 DE60233377D1 DE60233377T DE60233377T DE60233377D1 DE 60233377 D1 DE60233377 D1 DE 60233377D1 DE 60233377 T DE60233377 T DE 60233377T DE 60233377 T DE60233377 T DE 60233377T DE 60233377 D1 DE60233377 D1 DE 60233377D1
- Authority
- DE
- Germany
- Prior art keywords
- level shifter
- shifter
- level
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/003—Modifications for increasing the reliability for protection
- H03K19/00369—Modifications for compensating variations of temperature, supply voltage or other physical parameters
- H03K19/00384—Modifications for compensating variations of temperature, supply voltage or other physical parameters in field effect transistor circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/01—Modifications for accelerating switching
- H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
- H03K19/01728—Modifications for accelerating switching in field-effect transistor circuits in synchronous circuits, i.e. by using clock signals
- H03K19/01742—Modifications for accelerating switching in field-effect transistor circuits in synchronous circuits, i.e. by using clock signals by means of a pull-up or down element
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
- H03K19/018507—Interface arrangements
- H03K19/01855—Interface arrangements synchronous, i.e. using clock signals
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Dram (AREA)
- Logic Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001362490 | 2001-11-28 | ||
JP2002145080A JP3813538B2 (ja) | 2001-11-28 | 2002-05-20 | レベルシフタ |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60233377D1 true DE60233377D1 (de) | 2009-10-01 |
Family
ID=26624736
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60233377T Expired - Lifetime DE60233377D1 (de) | 2001-11-28 | 2002-10-14 | Pegelschieber |
Country Status (7)
Country | Link |
---|---|
US (1) | US6774673B2 (de) |
EP (1) | EP1317066B1 (de) |
JP (1) | JP3813538B2 (de) |
KR (1) | KR100839551B1 (de) |
CN (1) | CN1242475C (de) |
DE (1) | DE60233377D1 (de) |
TW (1) | TW571514B (de) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6683486B2 (en) * | 2002-04-02 | 2004-01-27 | Infineon Technologies Ag | Low voltage shifter with latching function |
US6954100B2 (en) * | 2003-09-12 | 2005-10-11 | Freescale Semiconductor, Inc. | Level shifter |
US7276953B1 (en) | 2003-11-12 | 2007-10-02 | Cypress Semiconductor Corporation | Level shifting input buffer circuit |
JP4113491B2 (ja) * | 2003-12-15 | 2008-07-09 | 三菱電機株式会社 | 半導体装置 |
US20050174158A1 (en) * | 2004-02-06 | 2005-08-11 | Khan Qadeer A. | Bidirectional level shifter |
JP4356836B2 (ja) * | 2004-02-13 | 2009-11-04 | 川崎マイクロエレクトロニクス株式会社 | レベルシフト回路 |
US7227383B2 (en) | 2004-02-19 | 2007-06-05 | Mosaid Delaware, Inc. | Low leakage and data retention circuitry |
JP4127232B2 (ja) * | 2004-04-01 | 2008-07-30 | セイコーエプソン株式会社 | レベルシフタ、レベルシフト回路、電気光学装置、及び電子機器 |
US7009424B2 (en) * | 2004-06-10 | 2006-03-07 | Freescale Semiconductor, Inc | Single supply level shifter |
US7102410B2 (en) * | 2004-06-10 | 2006-09-05 | Freescale Semiconductor, Inc. | High voltage level converter using low voltage devices |
US20050285658A1 (en) * | 2004-06-29 | 2005-12-29 | Schulmeyer Kyle C | Level shifter with reduced duty cycle variation |
US7151400B2 (en) * | 2004-07-13 | 2006-12-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Boost-biased level shifter |
US7956641B1 (en) | 2005-04-28 | 2011-06-07 | Cypress Semiconductor Corporation | Low voltage interface circuit |
US7286417B2 (en) * | 2005-06-21 | 2007-10-23 | Micron Technology, Inc. | Low power dissipation voltage generator |
US7312636B2 (en) * | 2006-02-06 | 2007-12-25 | Mosaid Technologies Incorporated | Voltage level shifter circuit |
KR100780769B1 (ko) * | 2006-06-29 | 2007-11-30 | 주식회사 하이닉스반도체 | 듀얼 패스 레벨 시프터회로 |
KR101230313B1 (ko) * | 2006-07-05 | 2013-02-06 | 재단법인서울대학교산학협력재단 | 레벨 시프터 및 그의 구동 방법 |
JP2008152845A (ja) * | 2006-12-15 | 2008-07-03 | Toshiba Corp | 半導体記憶装置 |
TWI346453B (en) | 2007-12-17 | 2011-08-01 | Richtek Technology Corp | Level shift circuit and method for the same |
US7683668B1 (en) | 2008-11-05 | 2010-03-23 | Freescale Semiconductor, Inc. | Level shifter |
US8427888B2 (en) * | 2010-02-09 | 2013-04-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Word-line driver using level shifter at local control circuit |
WO2011132023A1 (en) * | 2010-04-22 | 2011-10-27 | Freescale Semiconductor, Inc. | Voltage level shifter, decoupler for a voltage level shifter, and voltage shifting method |
US8299725B2 (en) * | 2010-07-06 | 2012-10-30 | Himax Technologies Limited | Driver for driving light emitting device |
US8847870B2 (en) * | 2011-10-27 | 2014-09-30 | Citizen Finetech Miyota Co., Ltd. | Voltage conversion apparatus suitable for a pixel driver and methods |
US8787109B2 (en) * | 2012-05-08 | 2014-07-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Word line driver having a control switch |
KR101745753B1 (ko) * | 2013-06-21 | 2017-06-13 | 매그나칩 반도체 유한회사 | 다중 전원용 레벨 시프터 |
KR102290171B1 (ko) | 2015-01-13 | 2021-08-17 | 주식회사 실리콘웍스 | 개선된 시간 응답 특성을 가지는 레벨 시프터 회로 및 그 제어 방법 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0433271A3 (en) * | 1985-07-22 | 1991-11-06 | Hitachi, Ltd. | Semiconductor device |
KR950004745B1 (ko) * | 1990-01-23 | 1995-05-06 | 니뽄 덴끼 가부시끼가이샤 | 반도체 디지탈 회로 |
US5467038A (en) * | 1994-02-15 | 1995-11-14 | Hewlett-Packard Company | Quick resolving latch |
US5825225A (en) * | 1996-02-09 | 1998-10-20 | Intel Corporation | Boosted differential latch |
JP3859766B2 (ja) * | 1996-05-24 | 2006-12-20 | 株式会社ルネサステクノロジ | 半導体記憶装置の入力回路 |
-
2002
- 2002-05-20 JP JP2002145080A patent/JP3813538B2/ja not_active Expired - Fee Related
- 2002-10-14 EP EP02022843A patent/EP1317066B1/de not_active Expired - Fee Related
- 2002-10-14 DE DE60233377T patent/DE60233377D1/de not_active Expired - Lifetime
- 2002-10-15 US US10/270,135 patent/US6774673B2/en not_active Expired - Lifetime
- 2002-10-18 TW TW091124129A patent/TW571514B/zh not_active IP Right Cessation
- 2002-10-28 KR KR1020020065767A patent/KR100839551B1/ko active IP Right Grant
- 2002-11-19 CN CNB021514232A patent/CN1242475C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2003229756A (ja) | 2003-08-15 |
US6774673B2 (en) | 2004-08-10 |
EP1317066B1 (de) | 2009-08-19 |
JP3813538B2 (ja) | 2006-08-23 |
EP1317066A1 (de) | 2003-06-04 |
CN1242475C (zh) | 2006-02-15 |
TW571514B (en) | 2004-01-11 |
KR100839551B1 (ko) | 2008-06-20 |
KR20030043626A (ko) | 2003-06-02 |
CN1423332A (zh) | 2003-06-11 |
US20030098711A1 (en) | 2003-05-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: FUJITSU SEMICONDUCTOR LTD., YOKOHAMA, KANAGAWA, JP |
|
8328 | Change in the person/name/address of the agent |
Representative=s name: SEEGER SEEGER LINDNER PARTNERSCHAFT PATENTANWAELTE |