DE60230242D1 - Verfahren und Vorrichtung zur Diamantsynthese durch chemische Dampfabscheidung - Google Patents

Verfahren und Vorrichtung zur Diamantsynthese durch chemische Dampfabscheidung

Info

Publication number
DE60230242D1
DE60230242D1 DE60230242T DE60230242T DE60230242D1 DE 60230242 D1 DE60230242 D1 DE 60230242D1 DE 60230242 T DE60230242 T DE 60230242T DE 60230242 T DE60230242 T DE 60230242T DE 60230242 D1 DE60230242 D1 DE 60230242D1
Authority
DE
Germany
Prior art keywords
vapor deposition
chemical vapor
diamond synthesis
diamond
synthesis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60230242T
Other languages
English (en)
Inventor
Ki-Woong Chae
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Precision Diamond Co Ltd
Original Assignee
Precision Diamond Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Precision Diamond Co Ltd filed Critical Precision Diamond Co Ltd
Application granted granted Critical
Publication of DE60230242D1 publication Critical patent/DE60230242D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/271—Diamond only using hot filaments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
DE60230242T 2001-02-26 2002-02-26 Verfahren und Vorrichtung zur Diamantsynthese durch chemische Dampfabscheidung Expired - Lifetime DE60230242D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2001-0009598A KR100382943B1 (ko) 2001-02-26 2001-02-26 고온 열 필라멘트를 이용한 기상화학다이아몬드증착장치
PCT/KR2002/000315 WO2002068709A1 (en) 2001-02-26 2002-02-26 A chemical vapor deposition process and apparatus thereof

Publications (1)

Publication Number Publication Date
DE60230242D1 true DE60230242D1 (de) 2009-01-22

Family

ID=19706245

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60230242T Expired - Lifetime DE60230242D1 (de) 2001-02-26 2002-02-26 Verfahren und Vorrichtung zur Diamantsynthese durch chemische Dampfabscheidung

Country Status (6)

Country Link
US (1) US6981465B2 (de)
EP (1) EP1370709B1 (de)
JP (1) JP4106272B2 (de)
KR (1) KR100382943B1 (de)
DE (1) DE60230242D1 (de)
WO (1) WO2002068709A1 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4843785B2 (ja) * 2006-02-28 2011-12-21 国立大学法人東北大学 気相ダイヤモンド膜のコーティング方法及び装置
TW200809000A (en) * 2006-08-09 2008-02-16 Kinik Co Chemical vapor thin film deposition apparatus having vertical plating surface and power controlled heat wire
TW200809924A (en) * 2006-08-09 2008-02-16 Kinik Co Chemical vapor thin film deposition device
US7833581B2 (en) * 2006-09-11 2010-11-16 The Hong Kong University Of Science And Technology Method for making a highly stable diamond film on a substrate
US9157152B2 (en) * 2007-03-29 2015-10-13 Tokyo Electron Limited Vapor deposition system
US20080241377A1 (en) * 2007-03-29 2008-10-02 Tokyo Electron Limited Vapor deposition system and method of operating
US20090226614A1 (en) * 2008-03-04 2009-09-10 Tokyo Electron Limited Porous gas heating device for a vapor deposition system
US8291856B2 (en) * 2008-03-07 2012-10-23 Tokyo Electron Limited Gas heating device for a vapor deposition system
DE102008044025A1 (de) * 2008-11-24 2010-08-05 Cemecon Ag Vorrichtung und Verfahren zum Beschichten eines Substrats mittels CVD
DE102008044028A1 (de) * 2008-11-24 2010-08-12 Cemecon Ag Vorrichtung und Verfahren zum Beschichten eines Substrats mittels CVD
KR101009699B1 (ko) * 2008-11-27 2011-01-19 현대제철 주식회사 견인형 축압기
JP5430979B2 (ja) * 2009-03-12 2014-03-05 大亜真空株式会社 熱フィラメントｃｖｄ装置
DE102009023471B4 (de) * 2009-06-02 2012-08-30 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Beschichtungsanlage und -verfahren
CN102011101B (zh) * 2009-09-04 2013-06-05 清华大学 金刚石薄膜的生长装置
US8272347B2 (en) * 2009-09-14 2012-09-25 Tokyo Electron Limited High temperature gas heating device for a vapor deposition system
US9139910B2 (en) 2010-06-11 2015-09-22 Tokyo Electron Limited Method for chemical vapor deposition control
US8852347B2 (en) 2010-06-11 2014-10-07 Tokyo Electron Limited Apparatus for chemical vapor deposition control
CN102226273B (zh) * 2011-06-13 2012-09-05 南京航空航天大学 金刚石膜生长电极弹性张紧装置
CN102634770A (zh) * 2012-05-06 2012-08-15 北京科技大学 一种大面积沉积金刚石膜的热丝架及其制造方法
US9469918B2 (en) 2014-01-24 2016-10-18 Ii-Vi Incorporated Substrate including a diamond layer and a composite layer of diamond and silicon carbide, and, optionally, silicon
WO2019003151A1 (en) * 2017-06-28 2019-01-03 Icdat Ltd. SYSTEM AND METHOD FOR CHEMICAL VAPOR DEPOSITION OF SYNTHETIC DIAMONDS
CN108505019B (zh) * 2018-06-12 2024-02-09 深圳先进技术研究院 热丝夹具与热丝沉积设备及其应用与利用其得到的器具
CN110453194B (zh) * 2019-07-24 2021-07-20 珠海中纳金刚石有限公司 一种热丝自动调节装置以及方法
CN115961265A (zh) * 2023-02-01 2023-04-14 常州捷佳创精密机械有限公司 一种大面积卧式cat-cvd镀膜腔室及设备

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6472992A (en) * 1987-09-14 1989-03-17 Sumitomo Electric Industries Diamond synthesizing installation
US4958592A (en) 1988-08-22 1990-09-25 General Electric Company Resistance heater for diamond production by CVD
US4970986A (en) * 1989-08-03 1990-11-20 General Electric Company Apparatus for synthetic diamond deposition including spring-tensioned filaments
JPH03103250A (ja) * 1989-09-18 1991-04-30 Olympus Optical Co Ltd 超音波治療装置
KR0184849B1 (ko) * 1990-07-18 1999-05-01 하지메 히토추야나기 다이아몬드 제조방법 및 장치
JPH0492891A (ja) * 1990-08-07 1992-03-25 Toyota Motor Corp ダイヤモンド膜形成方法
JPH04219397A (ja) * 1990-09-21 1992-08-10 Kawasaki Steel Corp ダイヤモンドの気相合成方法及び装置
JPH07291793A (ja) * 1994-04-26 1995-11-07 Ishizuka Kenkyusho:Kk 直流電界印加ｃｖｄによるダイヤモンド状炭素成長法
US5833753A (en) * 1995-12-20 1998-11-10 Sp 3, Inc. Reactor having an array of heating filaments and a filament force regulator

Also Published As

Publication number Publication date
JP2004529835A (ja) 2004-09-30
EP1370709A4 (de) 2006-07-05
KR100382943B1 (ko) 2003-05-09
EP1370709B1 (de) 2008-12-10
KR20020069545A (ko) 2002-09-05
JP4106272B2 (ja) 2008-06-25
WO2002068709A1 (en) 2002-09-06
US6981465B2 (en) 2006-01-03
EP1370709A1 (de) 2003-12-17
US20040069231A1 (en) 2004-04-15

Similar Documents

Publication Publication Date Title
DE60230242D1 (de) Verfahren und Vorrichtung zur Diamantsynthese durch chemische Dampfabscheidung
DE60310291D1 (de) Verfahren und Vorrichtung zur Gasphasenbeschichtung
DE60221619D1 (de) Verfahren zur Reinigung von Synthesegas
DE60114558D1 (de) Verfahren und Vorrichtung zur Reformierung von Brennstoff
DE60217530D1 (de) Verfahren zur halbleiternano partikelsynthese
DE60211402D1 (de) Verfahren und Vorrichtung zur Gastrocknung
DE60324231D1 (de) Verfahren und Vorrichtung zur Behandlung eines Einsatzgases
DE60233267D1 (de) Vorrichtung und Verfahren zur Herstellung von Metallschichten
DE60319294D1 (de) Vorrichtung und Verfahren zur Substratbehandlung
DE60239796D1 (de) Verfahren und vorrichtung zur sicheren transkodierung
DE602004002519D1 (de) Verfahren zur Oberflächenbehandlung von Metallen
DE60123640D1 (de) Verfahren und vorrichtung zur voraussage eines fahrwegs
DE60116035D1 (de) Verfahren und Vorrichtung zur Abwasserbehandlung
DE60307367D1 (de) Verfahren und Vorrichtung zur Reinigung von Abgasen
DE50303723D1 (de) Verfahren zur abgasnachbehandlung und vorrichtung hierzu
DE60300845D1 (de) Verfahren und Vorrichtung zur Reinigung von Abgas
DE60303268D1 (de) Verfahren und Vorrichtung zur Herstellung von Microarrays
DE10197144T1 (de) Verfahren zur Herstellung von Nitrilverbindungen aus ethylenisch ungesättigten Verbindungen
DE50109023D1 (de) Vorrichtung zur Herstellung von Wellrohren
ATE388135T1 (de) Verfahren zur herstellung von 1,3-substituierte indene und aryl-annellierte azapolycyclische verbindungen
DE60209584D1 (de) Verfahren und Vorrichtung zur Herstellung von Metallen hoher Reinheit durch verbesserte Raffinierung
DE60112372D1 (de) Vorrichtung und Verfahren zur chemischen Gasphasenabscheidung
DE60227207D1 (de) Verfahren zur Filmabscheidung
DE50309662D1 (de) Verfahren zur Entschichtung von Triebwerksbauteilen und Vorrichtung zur Durchführung des Verfahrens
DE60318654D1 (de) Farbfilter, elektro-optische Vorrichtung, elektronisches Gerät, Verfahren zur Herstellung des Farbfiltersubstrats und Verfahren zur Herstellung der elektro-optischen Vorrichtung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition