JPS6472992A - Diamond synthesizing installation - Google Patents

Diamond synthesizing installation

Info

Publication number
JPS6472992A
JPS6472992A JP23007887A JP23007887A JPS6472992A JP S6472992 A JPS6472992 A JP S6472992A JP 23007887 A JP23007887 A JP 23007887A JP 23007887 A JP23007887 A JP 23007887A JP S6472992 A JPS6472992 A JP S6472992A
Authority
JP
Japan
Prior art keywords
base material
exerted
tension
heated
coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23007887A
Other languages
Japanese (ja)
Inventor
Masaaki Tobioka
Akihiko Ikegaya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP23007887A priority Critical patent/JPS6472992A/en
Publication of JPS6472992A publication Critical patent/JPS6472992A/en
Pending legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To broaden a region capable of coating and easily obtain synthesized diamond high in perfectibility by using a thermionic radiation filament which is exerted with tension and stretched parallel to a base material in straight line and heated and allowing a specified gaseous mixture to react. CONSTITUTION:A plurality of thermionic radiation filaments 1... are exerted with tension by a weight 3 and stretched parallel to base material 2. A gaseous mixture of hydrocarbon (e.g. CH4) and H2 is fed to a reaction vessel 4 and the filaments 1 are electrified and heated at >=1,800 deg.C and also the surface temp. of the base material 2 is held at 950-1,050 deg.C by controlling water quantity of a supporting base 5 for the water-cooling base material and synthesized diamond is deposited on the surface of the base material 2 by coating it in this state.
JP23007887A 1987-09-14 1987-09-14 Diamond synthesizing installation Pending JPS6472992A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23007887A JPS6472992A (en) 1987-09-14 1987-09-14 Diamond synthesizing installation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23007887A JPS6472992A (en) 1987-09-14 1987-09-14 Diamond synthesizing installation

Publications (1)

Publication Number Publication Date
JPS6472992A true JPS6472992A (en) 1989-03-17

Family

ID=16902203

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23007887A Pending JPS6472992A (en) 1987-09-14 1987-09-14 Diamond synthesizing installation

Country Status (1)

Country Link
JP (1) JPS6472992A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2635535A1 (en) * 1988-08-22 1990-02-23 Gen Electric RESISTANCE-ENHANCED HEATING ELEMENT FOR THE PRODUCTION OF DIAMOND BY GAS-PHASE DEPOSITION BY CHEMICAL PROCESS
KR100382943B1 (en) * 2001-02-26 2003-05-09 프리시젼다이아몬드 주식회사 A chemical vapor deposition apparatus
DE102008044025A1 (en) 2008-11-24 2010-08-05 Cemecon Ag Apparatus and method for coating a substrate by CVD
DE102008044028A1 (en) 2008-11-24 2010-08-12 Cemecon Ag Apparatus and method for coating a substrate by CVD
US8822882B2 (en) 2002-06-10 2014-09-02 New Wave Research Scribing sapphire substrates with a solid state UV laser with edge detection

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6325296A (en) * 1986-07-17 1988-02-02 Toshiba Corp Production of diamond

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6325296A (en) * 1986-07-17 1988-02-02 Toshiba Corp Production of diamond

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2635535A1 (en) * 1988-08-22 1990-02-23 Gen Electric RESISTANCE-ENHANCED HEATING ELEMENT FOR THE PRODUCTION OF DIAMOND BY GAS-PHASE DEPOSITION BY CHEMICAL PROCESS
KR100382943B1 (en) * 2001-02-26 2003-05-09 프리시젼다이아몬드 주식회사 A chemical vapor deposition apparatus
EP1370709A1 (en) * 2001-02-26 2003-12-17 Precision Diamond Technologies Co., Ltd A chemical vapor deposition process and apparatus thereof
EP1370709A4 (en) * 2001-02-26 2006-07-05 Prec Diamond Technologies Co L A chemical vapor deposition process and apparatus thereof
US8822882B2 (en) 2002-06-10 2014-09-02 New Wave Research Scribing sapphire substrates with a solid state UV laser with edge detection
DE102008044025A1 (en) 2008-11-24 2010-08-05 Cemecon Ag Apparatus and method for coating a substrate by CVD
DE102008044028A1 (en) 2008-11-24 2010-08-12 Cemecon Ag Apparatus and method for coating a substrate by CVD
CN102292795A (en) * 2008-11-24 2011-12-21 迪亚康有限责任公司 Device and method for coating a substrate using CVD
JP2012509825A (en) * 2008-11-24 2012-04-26 ディアッコン ゲーエムベーハー Device and method for coating a substrate using chemical vapor deposition
US9127350B2 (en) 2008-11-24 2015-09-08 Diaccon Gmbh Device and method for coating a substrate using CVD
US9343337B2 (en) 2008-11-24 2016-05-17 Diaccon Gmbh Device and method for coating a substrate using CVD

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