JPS6472992A - Diamond synthesizing installation - Google Patents
Diamond synthesizing installationInfo
- Publication number
- JPS6472992A JPS6472992A JP23007887A JP23007887A JPS6472992A JP S6472992 A JPS6472992 A JP S6472992A JP 23007887 A JP23007887 A JP 23007887A JP 23007887 A JP23007887 A JP 23007887A JP S6472992 A JPS6472992 A JP S6472992A
- Authority
- JP
- Japan
- Prior art keywords
- base material
- exerted
- tension
- heated
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To broaden a region capable of coating and easily obtain synthesized diamond high in perfectibility by using a thermionic radiation filament which is exerted with tension and stretched parallel to a base material in straight line and heated and allowing a specified gaseous mixture to react. CONSTITUTION:A plurality of thermionic radiation filaments 1... are exerted with tension by a weight 3 and stretched parallel to base material 2. A gaseous mixture of hydrocarbon (e.g. CH4) and H2 is fed to a reaction vessel 4 and the filaments 1 are electrified and heated at >=1,800 deg.C and also the surface temp. of the base material 2 is held at 950-1,050 deg.C by controlling water quantity of a supporting base 5 for the water-cooling base material and synthesized diamond is deposited on the surface of the base material 2 by coating it in this state.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23007887A JPS6472992A (en) | 1987-09-14 | 1987-09-14 | Diamond synthesizing installation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23007887A JPS6472992A (en) | 1987-09-14 | 1987-09-14 | Diamond synthesizing installation |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6472992A true JPS6472992A (en) | 1989-03-17 |
Family
ID=16902203
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23007887A Pending JPS6472992A (en) | 1987-09-14 | 1987-09-14 | Diamond synthesizing installation |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6472992A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2635535A1 (en) * | 1988-08-22 | 1990-02-23 | Gen Electric | RESISTANCE-ENHANCED HEATING ELEMENT FOR THE PRODUCTION OF DIAMOND BY GAS-PHASE DEPOSITION BY CHEMICAL PROCESS |
KR100382943B1 (en) * | 2001-02-26 | 2003-05-09 | 프리시젼다이아몬드 주식회사 | A chemical vapor deposition apparatus |
DE102008044025A1 (en) | 2008-11-24 | 2010-08-05 | Cemecon Ag | Apparatus and method for coating a substrate by CVD |
DE102008044028A1 (en) | 2008-11-24 | 2010-08-12 | Cemecon Ag | Apparatus and method for coating a substrate by CVD |
US8822882B2 (en) | 2002-06-10 | 2014-09-02 | New Wave Research | Scribing sapphire substrates with a solid state UV laser with edge detection |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6325296A (en) * | 1986-07-17 | 1988-02-02 | Toshiba Corp | Production of diamond |
-
1987
- 1987-09-14 JP JP23007887A patent/JPS6472992A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6325296A (en) * | 1986-07-17 | 1988-02-02 | Toshiba Corp | Production of diamond |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2635535A1 (en) * | 1988-08-22 | 1990-02-23 | Gen Electric | RESISTANCE-ENHANCED HEATING ELEMENT FOR THE PRODUCTION OF DIAMOND BY GAS-PHASE DEPOSITION BY CHEMICAL PROCESS |
KR100382943B1 (en) * | 2001-02-26 | 2003-05-09 | 프리시젼다이아몬드 주식회사 | A chemical vapor deposition apparatus |
EP1370709A1 (en) * | 2001-02-26 | 2003-12-17 | Precision Diamond Technologies Co., Ltd | A chemical vapor deposition process and apparatus thereof |
EP1370709A4 (en) * | 2001-02-26 | 2006-07-05 | Prec Diamond Technologies Co L | A chemical vapor deposition process and apparatus thereof |
US8822882B2 (en) | 2002-06-10 | 2014-09-02 | New Wave Research | Scribing sapphire substrates with a solid state UV laser with edge detection |
DE102008044025A1 (en) | 2008-11-24 | 2010-08-05 | Cemecon Ag | Apparatus and method for coating a substrate by CVD |
DE102008044028A1 (en) | 2008-11-24 | 2010-08-12 | Cemecon Ag | Apparatus and method for coating a substrate by CVD |
CN102292795A (en) * | 2008-11-24 | 2011-12-21 | 迪亚康有限责任公司 | Device and method for coating a substrate using CVD |
JP2012509825A (en) * | 2008-11-24 | 2012-04-26 | ディアッコン ゲーエムベーハー | Device and method for coating a substrate using chemical vapor deposition |
US9127350B2 (en) | 2008-11-24 | 2015-09-08 | Diaccon Gmbh | Device and method for coating a substrate using CVD |
US9343337B2 (en) | 2008-11-24 | 2016-05-17 | Diaccon Gmbh | Device and method for coating a substrate using CVD |
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