JPS60241222A - Formation of accumulated film - Google Patents

Formation of accumulated film

Info

Publication number
JPS60241222A
JPS60241222A JP59098375A JP9837584A JPS60241222A JP S60241222 A JPS60241222 A JP S60241222A JP 59098375 A JP59098375 A JP 59098375A JP 9837584 A JP9837584 A JP 9837584A JP S60241222 A JPS60241222 A JP S60241222A
Authority
JP
Japan
Prior art keywords
support
gases
raw
accumulated film
accumulated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP59098375A
Other languages
Japanese (ja)
Other versions
JPH0719749B2 (en
Inventor
Yukio Nishimura
Hiroshi Matsuda
Masahiro Haruta
Yutaka Hirai
Takeshi Eguchi
Takashi Nakagiri
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP59098375A priority Critical patent/JPH0719749B2/en
Publication of JPS60241222A publication Critical patent/JPS60241222A/en
Publication of JPH0719749B2 publication Critical patent/JPH0719749B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24Deposition of silicon only

Abstract

PURPOSE:To enhance the uniformity of an accumulated film and to increase the stability by employing as raw material gases gases of straight chain silane compound and halogen compound and forming an amorphous silicon accumulated film at a low temperature. CONSTITUTION:A supporting base 3 and a support 2 are provided in an accumulation chamber 1. The support 2 and the supporting base 3 are heated by the heater 4 to 150-300 deg.C. Raw material gases are respectively supplied from gas supply sources 9-12. Stock gases are straight chain silane compound and halogen compound represented by a formula I. The raw material gas fed to the chamber is applied with thermal energy by the surface of the heated support 2, thermally excited and decomposed. Thus, an a-Si is accumulated on the surface of the support 2. Since performed at a low temperature, resin having low heat resistance can be used as the support 2.
JP59098375A 1984-05-15 1984-05-15 Method of forming deposited film Expired - Fee Related JPH0719749B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59098375A JPH0719749B2 (en) 1984-05-15 1984-05-15 Method of forming deposited film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59098375A JPH0719749B2 (en) 1984-05-15 1984-05-15 Method of forming deposited film

Publications (2)

Publication Number Publication Date
JPS60241222A true JPS60241222A (en) 1985-11-30
JPH0719749B2 JPH0719749B2 (en) 1995-03-06

Family

ID=14218128

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59098375A Expired - Fee Related JPH0719749B2 (en) 1984-05-15 1984-05-15 Method of forming deposited film

Country Status (1)

Country Link
JP (1) JPH0719749B2 (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0226462A2 (en) * 1985-12-11 1987-06-24 Canon Kabushiki Kaisha Process for the preparation of a photoelectromotive force member
JPS62152171A (en) * 1985-12-26 1987-07-07 Canon Inc Thin-film transistor
JPS62193243A (en) * 1986-02-20 1987-08-25 Canon Inc Formation of deposit film
JPS62193242A (en) * 1986-02-20 1987-08-25 Canon Inc Formation of deposit film
JPS62199014A (en) * 1986-02-27 1987-09-02 Canon Inc Formation of deposited film
EP0240305A2 (en) * 1986-03-31 1987-10-07 Canon Kabushiki Kaisha Method for forming a deposited film
EP0241204A2 (en) * 1986-03-31 1987-10-14 Canon Kabushiki Kaisha Method for forming crystalline deposited film
EP0240314B1 (en) * 1986-03-31 1993-08-18 Canon Kabushiki Kaisha Method for forming deposited film
EP0240306B1 (en) * 1986-03-31 1993-09-29 Canon Kabushiki Kaisha Method for forming deposited film

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58158646A (en) * 1982-03-16 1983-09-20 Canon Inc Photoconductive material

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58158646A (en) * 1982-03-16 1983-09-20 Canon Inc Photoconductive material

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0226462A2 (en) * 1985-12-11 1987-06-24 Canon Kabushiki Kaisha Process for the preparation of a photoelectromotive force member
EP0226462B1 (en) * 1985-12-11 1995-07-12 Canon Kabushiki Kaisha Process for the preparation of a photoelectromotive force member
JPS62152171A (en) * 1985-12-26 1987-07-07 Canon Inc Thin-film transistor
JPS62193243A (en) * 1986-02-20 1987-08-25 Canon Inc Formation of deposit film
JPS62193242A (en) * 1986-02-20 1987-08-25 Canon Inc Formation of deposit film
JPS62199014A (en) * 1986-02-27 1987-09-02 Canon Inc Formation of deposited film
EP0241204A2 (en) * 1986-03-31 1987-10-14 Canon Kabushiki Kaisha Method for forming crystalline deposited film
AU632204B2 (en) * 1986-03-31 1992-12-17 Canon Kabushiki Kaisha Method for forming a deposited film
EP0240314B1 (en) * 1986-03-31 1993-08-18 Canon Kabushiki Kaisha Method for forming deposited film
EP0240306B1 (en) * 1986-03-31 1993-09-29 Canon Kabushiki Kaisha Method for forming deposited film
AU651568B2 (en) * 1986-03-31 1994-07-28 Canon Kabushiki Kaisha Method for forming crystalline deposited film
EP0240305A2 (en) * 1986-03-31 1987-10-07 Canon Kabushiki Kaisha Method for forming a deposited film

Also Published As

Publication number Publication date
JPH0719749B2 (en) 1995-03-06

Similar Documents

Publication Publication Date Title
JPS61196515A (en) Band-fusion type semiconductor manufacturing equipment
JPS6026664A (en) Formation of deposited amorphous silicon film
JPS60241222A (en) Formation of accumulated film
JPS60200517A (en) Semiconductor heating process
JPS60224783A (en) Production of silicon carbide coating
JPS60241220A (en) Formation of accumulated film
JPS60163428A (en) Substrate susceptor for vapor growth
JPS61251126A (en) Vapor growth method
JPH0436469A (en) Method for feeding starting material for cvd and solid starting material usable therefor
JPS60245128A (en) Forming method of accumulated film
JPS645012A (en) Vapor growth equipment
JPH0461117A (en) Single-wafer cvd device
JPS61115323A (en) Forming method for deposited film
JPS59162941A (en) In-furnace arranging and heat absorbing type gas generating apparatus
JPS60253212A (en) Vapor growth device
KR970043134A (en) Uniform heating method of the heated object in the furnace
JPS58134431A (en) Plasma chemical vapor deposition device
JPS61187326A (en) Vapor growth apparatus
JPS60241221A (en) Formation of accumulated film
JPS587817A (en) Vapor growth method for semiconductor
JPS6428296A (en) Synthesis of diamond in vapor phase
JPS60192323A (en) Semiconductor vapor growth apparatus
JPS62196814A (en) Substrate holder for molecular beam epitaxy
JPS6276719A (en) Vapor growth apparatus
JPS55121649A (en) Cvd device

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees