JPS6472985A - Apparatus for producing semiconductor single crystal - Google Patents

Apparatus for producing semiconductor single crystal

Info

Publication number
JPS6472985A
JPS6472985A JP22861287A JP22861287A JPS6472985A JP S6472985 A JPS6472985 A JP S6472985A JP 22861287 A JP22861287 A JP 22861287A JP 22861287 A JP22861287 A JP 22861287A JP S6472985 A JPS6472985 A JP S6472985A
Authority
JP
Japan
Prior art keywords
crucible
single crystal
transportation
supporting base
reinforcing material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22861287A
Other languages
Japanese (ja)
Other versions
JP2579951B2 (en
Inventor
Hiromoto Fujita
Katsuyoshi Fukuda
Joshi Nishio
Kazutaka Terajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62228612A priority Critical patent/JP2579951B2/en
Publication of JPS6472985A publication Critical patent/JPS6472985A/en
Application granted granted Critical
Publication of JP2579951B2 publication Critical patent/JP2579951B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To prevent the failure, etc., of a crucible during the transportation thereof and to obtain a large-sized single crystal with good workability by fastening the crucible by means of a furnace member enclosing the crucible to integrate the crucible and further, providing holding parts for transportation to the furnace member. CONSTITUTION:The crucible 11 and a supporting base 12 which supports the crucible 11 are fastened and integrated by a reinforcing material 13 and thread working and further, the holding parts for transportation, for example, two holes 13' are provided to the crucible. A raw material is housed into such crucible 11 and the crucible is disposed in a high-pressure vessel 14. After the inside of the vessel is pressurized by gaseous Ar, the crucible 11 is heated by a heater 15 which coaxially encloses the crucible. A raw material 16 is thus obtd. A seed crystal 17 is then lowered and is held in contact with he melt 16; thereafter, the seed crystal 17 is pulled up while the crystal is kept rotated by which the single crystal is obtd. The supporting base 12 which houses the crucible 11 and is assembled with the reinforcing material 13 is taken in this state out of the high-pressure vessel 14 after the end of the production of the single crystal. The content remaining in the crucible 11 is taken out and the reinforcing material 13 is removed. The crucible 11 is taken out of the supporting base 12 and is cleaned.
JP62228612A 1987-09-14 1987-09-14 Semiconductor single crystal manufacturing equipment Expired - Lifetime JP2579951B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62228612A JP2579951B2 (en) 1987-09-14 1987-09-14 Semiconductor single crystal manufacturing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62228612A JP2579951B2 (en) 1987-09-14 1987-09-14 Semiconductor single crystal manufacturing equipment

Publications (2)

Publication Number Publication Date
JPS6472985A true JPS6472985A (en) 1989-03-17
JP2579951B2 JP2579951B2 (en) 1997-02-12

Family

ID=16879075

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62228612A Expired - Lifetime JP2579951B2 (en) 1987-09-14 1987-09-14 Semiconductor single crystal manufacturing equipment

Country Status (1)

Country Link
JP (1) JP2579951B2 (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5327199A (en) * 1992-08-20 1994-07-05 Ricoh Company, Ltd. Developing device for a color image forming apparatus
US5372090A (en) * 1991-09-12 1994-12-13 Ringsdorff-Werke Gmbh Multipart support crucible and method for producing the same
JP2009056495A (en) * 2007-08-31 2009-03-19 Koyo Giken:Kk Spot welding electrode
US8248014B2 (en) 2004-05-06 2012-08-21 Mechoshade Systems, Inc. Automated shade control system
US8525462B2 (en) 2005-03-08 2013-09-03 Mechoshade Systems, Inc. Automated shade control method and system
US8723467B2 (en) 2004-05-06 2014-05-13 Mechoshade Systems, Inc. Automated shade control in connection with electrochromic glass
US8836263B2 (en) 2004-05-06 2014-09-16 Mechoshade Systems, Inc. Automated shade control in connection with electrochromic glass

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6021900A (en) * 1983-07-19 1985-02-04 Agency Of Ind Science & Technol Apparatus for preparing compound semiconductor single crystal

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6021900A (en) * 1983-07-19 1985-02-04 Agency Of Ind Science & Technol Apparatus for preparing compound semiconductor single crystal

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5372090A (en) * 1991-09-12 1994-12-13 Ringsdorff-Werke Gmbh Multipart support crucible and method for producing the same
US5327199A (en) * 1992-08-20 1994-07-05 Ricoh Company, Ltd. Developing device for a color image forming apparatus
US8248014B2 (en) 2004-05-06 2012-08-21 Mechoshade Systems, Inc. Automated shade control system
US8432117B2 (en) 2004-05-06 2013-04-30 Mechoshade Systems, Inc. Automated shade control system
US8587242B2 (en) 2004-05-06 2013-11-19 Mechoshade Systems, Inc. Automated shade control system
US8723467B2 (en) 2004-05-06 2014-05-13 Mechoshade Systems, Inc. Automated shade control in connection with electrochromic glass
US8836263B2 (en) 2004-05-06 2014-09-16 Mechoshade Systems, Inc. Automated shade control in connection with electrochromic glass
US8525462B2 (en) 2005-03-08 2013-09-03 Mechoshade Systems, Inc. Automated shade control method and system
JP2009056495A (en) * 2007-08-31 2009-03-19 Koyo Giken:Kk Spot welding electrode

Also Published As

Publication number Publication date
JP2579951B2 (en) 1997-02-12

Similar Documents

Publication Publication Date Title
MY101038A (en) Method and apparatus for melting and refining glass material
IE881328L (en) Delayed-release suspensions of carbamazipine
MY103936A (en) Manufacturing method and equipment of single silicon crystal
JPS6472985A (en) Apparatus for producing semiconductor single crystal
JPS6472986A (en) Apparatus for producing semiconductor single crystal
MY104640A (en) Apparatus for manufacturing silicon single crystals.
JPS6476992A (en) Apparatus for growing single crystal
ES8600405A1 (en) Process and apparatus for the production of crystallized dextrose monohydrate.
JPS56104799A (en) Production of si single crystal and device therefor
MY102843A (en) Apparatus for manufacturing semiconductor single crystals
ES2006067A6 (en) PROCESS FOR PRODUCING p-XYLOL WITH A PURITY OF AT LEAST 99.5 %
JPS6445799A (en) Production of cadmium telluride based crystal
JPS6483593A (en) Apparatus for growing semiconductor single crystal
JPS57123889A (en) Preparation of single crystal
JPS6445796A (en) Apparatus for pulling up si single crystal and method therefor
JPS54141389A (en) Crucible used in crystal growing device, manufacture of said crucible and crystal growing method using said crucible
Mogilevskii et al. Influence of the Level of Purification of Inert Gases on the Quality of TiCu Crystals Grown From Their Melt
JPS6321576Y2 (en)
JPS6445709A (en) Production of crystal
JPS5692191A (en) Production of single crystal and producing device using this method
JPS6168394A (en) Production of groups iii-v polycrystal body
JPS6461392A (en) Production of gaas single crystal
JPS5645890A (en) Crystal growing apparatus
JPS6476991A (en) Production device for semiconductor crystal
Maksimov Methods of Producing Single Crystals of Alloys Based on the System Fe--Cr--Co