JPS6445709A - Production of crystal - Google Patents
Production of crystalInfo
- Publication number
- JPS6445709A JPS6445709A JP20066387A JP20066387A JPS6445709A JP S6445709 A JPS6445709 A JP S6445709A JP 20066387 A JP20066387 A JP 20066387A JP 20066387 A JP20066387 A JP 20066387A JP S6445709 A JPS6445709 A JP S6445709A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- pressure
- sealing agent
- crystal
- melted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE:To obtain crystal useful for semiconductor laser inexpensively and in high yield, by successively feeding an element having high dissociation pressure, a sealing agent and another element having high specific gravity to a crucible and heating under specific pressure while preventing raising of the sealing agent. CONSTITUTION:A crucible 4 is charged with a disklike red phosphorus lump 11 having the same diameter as that of the crucible, on which a similarly disklike sealing agent 12 such as B2O3 is placed. Further In lump 13 is placed on the sealing agent. Then the crucible 4 is set in a susceptor 3 of a single crystal pulling up device of high pressure and suppressing jigs 8 are fixed to an inner wall of a high-pressure container 1. Then a N2 gas under about 60atm., having >=equilibrium vapor pressure of In is introduced to the container 1, the In 13 is heated at about 160 deg.C by a heater 2, melted, the B2O3 12 and the phosphorus 11 to raise to the surface of the melted In 13 are prevented from raising by the suppressing jigs 8. Then the B2O3 12 is heated to about 600 deg.C, melted, raised to the surface of the In 13, the sunk In 13 is abruptly reacted with the phosphorus 11 to synthesize InP, which is crystallized. Then the prepared crystal is pulled up by a pulling up device to give crystal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62200663A JP2539841B2 (en) | 1987-08-11 | 1987-08-11 | Crystal manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62200663A JP2539841B2 (en) | 1987-08-11 | 1987-08-11 | Crystal manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6445709A true JPS6445709A (en) | 1989-02-20 |
| JP2539841B2 JP2539841B2 (en) | 1996-10-02 |
Family
ID=16428154
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62200663A Expired - Lifetime JP2539841B2 (en) | 1987-08-11 | 1987-08-11 | Crystal manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2539841B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2020536827A (en) * | 2017-12-08 | 2020-12-17 | 中国電子科技集団公司第十三研究所Ｔｈｅ １３Ｔｈ Ｒｅｓｅａｒｃｈ Ｉｎｓｔｉｔｕｔｅ Ｏｆ Ｃｈｉｎａ Ｅｌｅｃｔｒｏｎｉｃｓ Ｔｅｃｈｎｏｌｏｇｙ Ｇｒｏｕｐ Ｃｏｒｐｏｒａｔｉｏｎ | Method of phosphide in situ injection synthesis using carrier gas |
-
1987
- 1987-08-11 JP JP62200663A patent/JP2539841B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2020536827A (en) * | 2017-12-08 | 2020-12-17 | 中国電子科技集団公司第十三研究所Ｔｈｅ １３Ｔｈ Ｒｅｓｅａｒｃｈ Ｉｎｓｔｉｔｕｔｅ Ｏｆ Ｃｈｉｎａ Ｅｌｅｃｔｒｏｎｉｃｓ Ｔｅｃｈｎｏｌｏｇｙ Ｇｒｏｕｐ Ｃｏｒｐｏｒａｔｉｏｎ | Method of phosphide in situ injection synthesis using carrier gas |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2539841B2 (en) | 1996-10-02 |
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