JPS649898A - Production of silicon-containing gaas single crystal - Google Patents
Production of silicon-containing gaas single crystalInfo
- Publication number
- JPS649898A JPS649898A JP16590887A JP16590887A JPS649898A JP S649898 A JPS649898 A JP S649898A JP 16590887 A JP16590887 A JP 16590887A JP 16590887 A JP16590887 A JP 16590887A JP S649898 A JPS649898 A JP S649898A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- sealing agent
- melt
- single crystal
- reduction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To produce the titled single crystal having stable electrical characteristics without dispersion, by balancing the amount of silicon gettering from a raw material melt to a sealing agent with natural increase of silicon concentration in the melt due to the reduction of the melt. CONSTITUTION:A crucible 3 having a discharge hole (3a) and susceptor 4 on the periphery thereof is placed in a heating furnace 2 having a wound high-frequency heating coil 1. B2O3 and SiO2 in an amount so as to balance the reduction in silicon concentration by gettering of silicon in a raw material melt due to a sealing agent with an increase in silicon concentration according to reduction in the raw material melt are charged into the above-mentioned crucible 3 and melted in an inert gas atmosphere while being heated and stirred with a stirring tool 6. A cock 5 is then pulled up and the melt is flowed out into a cooling vessel 9 and solidified to afford a B2O3 sealing agent containing the SiO2 added thereto. The resultant sealing agent is used to carry out crystal growth of GaAs single crystal by a pulling up method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16590887A JPS649898A (en) | 1987-07-02 | 1987-07-02 | Production of silicon-containing gaas single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16590887A JPS649898A (en) | 1987-07-02 | 1987-07-02 | Production of silicon-containing gaas single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS649898A true JPS649898A (en) | 1989-01-13 |
Family
ID=15821291
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16590887A Pending JPS649898A (en) | 1987-07-02 | 1987-07-02 | Production of silicon-containing gaas single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS649898A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04283917A (en) * | 1991-03-12 | 1992-10-08 | Hitachi Ltd | Aligner for exposure system |
| JP2006306723A (en) * | 2006-06-22 | 2006-11-09 | Dowa Mining Co Ltd | Gallium arsenide single crystal |
| WO2023054202A1 (en) * | 2021-09-29 | 2023-04-06 | Ｄｏｗａエレクトロニクス株式会社 | Gaas wafer, gaas wafer group, and method for producing gaas ingot |
| JP2023056483A (en) * | 2021-09-29 | 2023-04-19 | Ｄｏｗａエレクトロニクス株式会社 | GaAs wafer, GaAs wafer group and method for manufacturing GaAs ingot |
-
1987
- 1987-07-02 JP JP16590887A patent/JPS649898A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04283917A (en) * | 1991-03-12 | 1992-10-08 | Hitachi Ltd | Aligner for exposure system |
| JP2006306723A (en) * | 2006-06-22 | 2006-11-09 | Dowa Mining Co Ltd | Gallium arsenide single crystal |
| WO2023054202A1 (en) * | 2021-09-29 | 2023-04-06 | Ｄｏｗａエレクトロニクス株式会社 | Gaas wafer, gaas wafer group, and method for producing gaas ingot |
| JP2023056483A (en) * | 2021-09-29 | 2023-04-19 | Ｄｏｗａエレクトロニクス株式会社 | GaAs wafer, GaAs wafer group and method for manufacturing GaAs ingot |
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