DE60219300D1 - Halbleiteranordnungen mit graben-gateelektrode und verfahren zu deren herstellung - Google Patents

Halbleiteranordnungen mit graben-gateelektrode und verfahren zu deren herstellung

Info

Publication number
DE60219300D1
DE60219300D1 DE60219300T DE60219300T DE60219300D1 DE 60219300 D1 DE60219300 D1 DE 60219300D1 DE 60219300 T DE60219300 T DE 60219300T DE 60219300 T DE60219300 T DE 60219300T DE 60219300 D1 DE60219300 D1 DE 60219300D1
Authority
DE
Germany
Prior art keywords
trench
mask
dopant
doping
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60219300T
Other languages
English (en)
Other versions
DE60219300T2 (de
Inventor
Steven T Peake
Georgios Petkos
Robert J Farr
Christopher M Rogers
Raymond J Grover
Peter Forbes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GBGB0110458.7A external-priority patent/GB0110458D0/en
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Application granted granted Critical
Publication of DE60219300D1 publication Critical patent/DE60219300D1/de
Publication of DE60219300T2 publication Critical patent/DE60219300T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
    • H01L29/66333—Vertical insulated gate bipolar transistors
    • H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
DE60219300T 2001-04-28 2002-04-25 Halbleiteranordnungen mit graben-gateelektrode und verfahren zu deren herstellung Expired - Lifetime DE60219300T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
GBGB0110458.7A GB0110458D0 (en) 2001-04-28 2001-04-28 Trench-gate semiconductor devices and their manufacture
GB0110458 2001-04-28
GB0129890 2001-12-14
GBGB0129890.0A GB0129890D0 (en) 2001-04-28 2001-12-14 Trench-gate semiconductor devices and their manufacture
PCT/IB2002/001377 WO2002089196A2 (en) 2001-04-28 2002-04-25 Trench-gate semiconductor devices and their manufacture

Publications (2)

Publication Number Publication Date
DE60219300D1 true DE60219300D1 (de) 2007-05-16
DE60219300T2 DE60219300T2 (de) 2008-01-03

Family

ID=26246015

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60219300T Expired - Lifetime DE60219300T2 (de) 2001-04-28 2002-04-25 Halbleiteranordnungen mit graben-gateelektrode und verfahren zu deren herstellung

Country Status (6)

Country Link
US (1) US6660591B2 (de)
EP (1) EP1386352B1 (de)
JP (1) JP2004520718A (de)
AT (1) ATE358891T1 (de)
DE (1) DE60219300T2 (de)
WO (1) WO2002089196A2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1393362B1 (de) * 2001-04-28 2011-12-14 Nxp B.V. Verfahren zur Herstellung einer Halbleiteranordnung mit Graben-Gate
US7033876B2 (en) * 2001-07-03 2006-04-25 Siliconix Incorporated Trench MIS device having implanted drain-drift region and thick bottom oxide and process for manufacturing the same
US7009247B2 (en) * 2001-07-03 2006-03-07 Siliconix Incorporated Trench MIS device with thick oxide layer in bottom of gate contact trench
US20060038223A1 (en) * 2001-07-03 2006-02-23 Siliconix Incorporated Trench MOSFET having drain-drift region comprising stack of implanted regions
US7291884B2 (en) * 2001-07-03 2007-11-06 Siliconix Incorporated Trench MIS device having implanted drain-drift region and thick bottom oxide
US6815317B2 (en) * 2002-06-05 2004-11-09 International Business Machines Corporation Method to perform deep implants without scattering to adjacent areas
US6921699B2 (en) * 2002-09-30 2005-07-26 International Rectifier Corporation Method for manufacturing a semiconductor device with a trench termination
KR100672763B1 (ko) * 2003-12-24 2007-01-22 주식회사 하이닉스반도체 반도체 소자의 게이트 형성방법
CN101421832A (zh) * 2004-03-01 2009-04-29 国际整流器公司 沟槽器件的自对准接触结构
US8564051B2 (en) * 2004-04-09 2013-10-22 International Rectifier Corporation Power semiconductor device with buried source electrode
KR100614240B1 (ko) * 2004-06-10 2006-08-18 삼성전자주식회사 전계 효과 트랜지스터를 포함하는 반도체 소자 및 그 형성방법
US7687342B2 (en) 2005-09-01 2010-03-30 Micron Technology, Inc. Method of manufacturing a memory device
US7416943B2 (en) 2005-09-01 2008-08-26 Micron Technology, Inc. Peripheral gate stacks and recessed array gates
US7557032B2 (en) * 2005-09-01 2009-07-07 Micron Technology, Inc. Silicided recessed silicon
US20080206944A1 (en) * 2007-02-23 2008-08-28 Pan-Jit International Inc. Method for fabricating trench DMOS transistors and schottky elements
JP2008235399A (ja) * 2007-03-19 2008-10-02 Toshiba Corp トレンチ型電力用半導体装置及びその製造方法
US7923373B2 (en) 2007-06-04 2011-04-12 Micron Technology, Inc. Pitch multiplication using self-assembling materials
DE102007037858B4 (de) * 2007-08-10 2012-04-19 Infineon Technologies Ag Halbleiterbauelement mit verbessertem dynamischen Verhalten
US8334160B2 (en) * 2007-10-01 2012-12-18 Lof Solar Corporation Semiconductor photovoltaic devices and methods of manufacturing the same
KR100988776B1 (ko) * 2007-12-27 2010-10-20 주식회사 동부하이텍 리세스드 게이트 트랜지스터의 제조 방법
KR101060619B1 (ko) * 2009-02-09 2011-08-31 주식회사 하이닉스반도체 반도체 장치의 소자분리막 제조방법 및 이를 이용한 비휘발성 메모리 장치 제조방법
JP5806600B2 (ja) * 2011-11-21 2015-11-10 住友電気工業株式会社 炭化珪素半導体装置の製造方法
DE102019105812B4 (de) 2019-03-07 2022-08-25 Infineon Technologies Ag Grabenstruktur enthaltende halbleitervorrichtung und herstellungsverfahren

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9216599D0 (en) 1992-08-05 1992-09-16 Philips Electronics Uk Ltd A semiconductor device comprising a vertical insulated gate field effect device and a method of manufacturing such a device
TW318283B (en) * 1996-12-09 1997-10-21 United Microelectronics Corp Multi-level read only memory structure and manufacturing method thereof
US6121089A (en) 1997-10-17 2000-09-19 Intersil Corporation Methods of forming power semiconductor devices having merged split-well body regions therein
GB9808234D0 (en) * 1998-04-17 1998-06-17 Koninkl Philips Electronics Nv Mnufacture of trench-gate semiconductor devices
GB9808237D0 (en) * 1998-04-17 1998-06-17 Koninkl Philips Electronics Nv Mnufacture of field-effect semiconductor devices
US6211018B1 (en) 1999-08-14 2001-04-03 Electronics And Telecommunications Research Institute Method for fabricating high density trench gate type power device
KR100399583B1 (ko) * 1999-11-29 2003-09-26 한국전자통신연구원 자기 정렬 기술을 이용한 트렌치 게이트 전력 소자 제조방법

Also Published As

Publication number Publication date
WO2002089196A3 (en) 2003-03-13
DE60219300T2 (de) 2008-01-03
WO2002089196A2 (en) 2002-11-07
ATE358891T1 (de) 2007-04-15
JP2004520718A (ja) 2004-07-08
EP1386352A2 (de) 2004-02-04
US20020160557A1 (en) 2002-10-31
US6660591B2 (en) 2003-12-09
EP1386352B1 (de) 2007-04-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NXP B.V., EINDHOVEN, NL

8328 Change in the person/name/address of the agent

Representative=s name: EISENFUEHR, SPEISER & PARTNER, 10178 BERLIN