TW289850B - The LDD MOSFET manufacturing method with reducing the usage of mask - Google Patents

The LDD MOSFET manufacturing method with reducing the usage of mask

Info

Publication number
TW289850B
TW289850B TW83111573A TW83111573A TW289850B TW 289850 B TW289850 B TW 289850B TW 83111573 A TW83111573 A TW 83111573A TW 83111573 A TW83111573 A TW 83111573A TW 289850 B TW289850 B TW 289850B
Authority
TW
Taiwan
Prior art keywords
well
mask
oxide
usage
reducing
Prior art date
Application number
TW83111573A
Other languages
Chinese (zh)
Inventor
Jyh-Shyan Wang
Min-Liang Chen
Original Assignee
Mos Electronics Taiwan Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mos Electronics Taiwan Inc filed Critical Mos Electronics Taiwan Inc
Priority to TW83111573A priority Critical patent/TW289850B/en
Application granted granted Critical
Publication of TW289850B publication Critical patent/TW289850B/en

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

A LDD MOSFET manufacturing method with reducing the usage of mask includes following steps: (a) Provide a semiconductor substrate with P & N well; (b) Form a gate insulating layer on P & N well; (c) Form a gate on gate insulating layer of P & N well; (d) Heat the substrate then grow a 1st oxide on gate top & sidewall of P & N well, and grow a 2nd oxide on source & drain region of P & N well, in which the thickness of 1st oxide is thicker than that of 2nd oxide; (e) Screen the N well by 1st mask, and implant the 1st and 2nd type N ions into the near gate portion on P well; (f) Screen the P well by 2nd mask, and implant 1st type P ion and 3rd type N ion into the near gate portion on N well.
TW83111573A 1994-12-09 1994-12-09 The LDD MOSFET manufacturing method with reducing the usage of mask TW289850B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW83111573A TW289850B (en) 1994-12-09 1994-12-09 The LDD MOSFET manufacturing method with reducing the usage of mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW83111573A TW289850B (en) 1994-12-09 1994-12-09 The LDD MOSFET manufacturing method with reducing the usage of mask

Publications (1)

Publication Number Publication Date
TW289850B true TW289850B (en) 1996-11-01

Family

ID=51398208

Family Applications (1)

Application Number Title Priority Date Filing Date
TW83111573A TW289850B (en) 1994-12-09 1994-12-09 The LDD MOSFET manufacturing method with reducing the usage of mask

Country Status (1)

Country Link
TW (1) TW289850B (en)

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees