TW289850B - The LDD MOSFET manufacturing method with reducing the usage of mask - Google Patents
The LDD MOSFET manufacturing method with reducing the usage of maskInfo
- Publication number
- TW289850B TW289850B TW83111573A TW83111573A TW289850B TW 289850 B TW289850 B TW 289850B TW 83111573 A TW83111573 A TW 83111573A TW 83111573 A TW83111573 A TW 83111573A TW 289850 B TW289850 B TW 289850B
- Authority
- TW
- Taiwan
- Prior art keywords
- well
- mask
- oxide
- usage
- reducing
- Prior art date
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
A LDD MOSFET manufacturing method with reducing the usage of mask includes following steps: (a) Provide a semiconductor substrate with P & N well; (b) Form a gate insulating layer on P & N well; (c) Form a gate on gate insulating layer of P & N well; (d) Heat the substrate then grow a 1st oxide on gate top & sidewall of P & N well, and grow a 2nd oxide on source & drain region of P & N well, in which the thickness of 1st oxide is thicker than that of 2nd oxide; (e) Screen the N well by 1st mask, and implant the 1st and 2nd type N ions into the near gate portion on P well; (f) Screen the P well by 2nd mask, and implant 1st type P ion and 3rd type N ion into the near gate portion on N well.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW83111573A TW289850B (en) | 1994-12-09 | 1994-12-09 | The LDD MOSFET manufacturing method with reducing the usage of mask |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW83111573A TW289850B (en) | 1994-12-09 | 1994-12-09 | The LDD MOSFET manufacturing method with reducing the usage of mask |
Publications (1)
Publication Number | Publication Date |
---|---|
TW289850B true TW289850B (en) | 1996-11-01 |
Family
ID=51398208
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW83111573A TW289850B (en) | 1994-12-09 | 1994-12-09 | The LDD MOSFET manufacturing method with reducing the usage of mask |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW289850B (en) |
-
1994
- 1994-12-09 TW TW83111573A patent/TW289850B/en not_active IP Right Cessation
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |