DE60210912D1 - Verfahren zum Bilden von Keimschichten für die Herstellung ferroelektrischer Dünnschichten mittels MOCVD auf Gateoxiden hoher Dielektrizitätskonstanten - Google Patents
Verfahren zum Bilden von Keimschichten für die Herstellung ferroelektrischer Dünnschichten mittels MOCVD auf Gateoxiden hoher DielektrizitätskonstantenInfo
- Publication number
- DE60210912D1 DE60210912D1 DE60210912T DE60210912T DE60210912D1 DE 60210912 D1 DE60210912 D1 DE 60210912D1 DE 60210912 T DE60210912 T DE 60210912T DE 60210912 T DE60210912 T DE 60210912T DE 60210912 D1 DE60210912 D1 DE 60210912D1
- Authority
- DE
- Germany
- Prior art keywords
- mocvd
- fabrication
- dielectric constant
- thin films
- high dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
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- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US10/020,868 US6664116B2 (en) | 2001-12-12 | 2001-12-12 | Seed layer processes for MOCVD of ferroelectric thin films on high-k gate oxides |
US20868 | 2001-12-12 |
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DE60210912D1 true DE60210912D1 (de) | 2006-06-01 |
DE60210912T2 DE60210912T2 (de) | 2007-04-26 |
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DE60210912T Expired - Lifetime DE60210912T2 (de) | 2001-12-12 | 2002-11-07 | Verfahren zum Bilden von Keimschichten für die Herstellung ferroelektrischer Dünnschichten mittels MOCVD auf Gateoxiden hoher Dielektrizitätskonstanten |
Country Status (6)
Country | Link |
---|---|
US (3) | US6664116B2 (de) |
EP (2) | EP1643000A1 (de) |
JP (1) | JP2003203910A (de) |
KR (1) | KR100562731B1 (de) |
DE (1) | DE60210912T2 (de) |
TW (1) | TW567541B (de) |
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US6664116B2 (en) * | 2001-12-12 | 2003-12-16 | Sharp Laboratories Of America, Inc. | Seed layer processes for MOCVD of ferroelectric thin films on high-k gate oxides |
JP2004140292A (ja) * | 2002-10-21 | 2004-05-13 | Tokyo Electron Ltd | 誘電体膜の形成方法 |
JP4578774B2 (ja) * | 2003-01-08 | 2010-11-10 | 富士通株式会社 | 強誘電体キャパシタの製造方法 |
US6794198B1 (en) * | 2003-06-25 | 2004-09-21 | Sharp Laboratories Of America, Inc. | MOCVD selective deposition of c-axis oriented Pb5Ge3O11 thin films on high-k gate oxides |
US7157111B2 (en) * | 2003-09-30 | 2007-01-02 | Sharp Laboratories Of America, Inc. | MOCVD selective deposition of C-axis oriented PB5GE3O11 thin films on In2O3 oxides |
US7531207B2 (en) * | 2004-02-17 | 2009-05-12 | Sharp Laboratories Of America, Inc. | MOCVD PGO thin films deposited on indium oxide for feram applications |
US20060068099A1 (en) * | 2004-09-30 | 2006-03-30 | Sharp Laboratories Of America, Inc. | Grading PrxCa1-xMnO3 thin films by metalorganic chemical vapor deposition |
KR20060112056A (ko) * | 2005-04-26 | 2006-10-31 | 주식회사 리 첼 | 유기금속 화학기상 증착장치를 이용한 아연산화물 박막형성방법 |
JP4257537B2 (ja) * | 2005-06-02 | 2009-04-22 | セイコーエプソン株式会社 | 強誘電体層の製造方法、電子機器の製造方法、強誘電体メモリ装置の製造方法、圧電素子の製造方法、およびインクジェット式記録ヘッドの製造方法 |
KR100890609B1 (ko) * | 2006-08-23 | 2009-03-27 | 재단법인서울대학교산학협력재단 | 강유전체, 그 제조방법, 및 그 강유전체를 포함하는 반도체 캐패시터와 mems 디바이스 |
WO2010150134A2 (en) * | 2009-06-25 | 2010-12-29 | Lam Research Ag | Method for treating a semiconductor wafer |
US10276697B1 (en) * | 2017-10-27 | 2019-04-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Negative capacitance FET with improved reliability performance |
US11444203B2 (en) | 2019-04-08 | 2022-09-13 | Kepler Computing Inc. | Doped polar layers and semiconductor device incorporating same |
KR20210057587A (ko) | 2019-11-12 | 2021-05-21 | 삼성전자주식회사 | 유전체 물질층을 포함하는 박막 구조체 및 그 제조 방법, 이를 포함하는 전자소자 |
CN113539812B (zh) * | 2021-07-14 | 2024-04-26 | 湘潭大学 | 一种同质种子层调控氧化铪基铁电薄膜电学性能的方法 |
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JP3024747B2 (ja) * | 1997-03-05 | 2000-03-21 | 日本電気株式会社 | 半導体メモリの製造方法 |
KR100275726B1 (ko) * | 1997-12-31 | 2000-12-15 | 윤종용 | 강유전체 메모리 장치 및 그 제조 방법 |
US6172385B1 (en) * | 1998-10-30 | 2001-01-09 | International Business Machines Corporation | Multilayer ferroelectric capacitor structure |
US6190925B1 (en) * | 1999-04-28 | 2001-02-20 | Sharp Laboratories Of America, Inc. | Epitaxially grown lead germanate film and deposition method |
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KR100365038B1 (ko) * | 1999-04-28 | 2002-12-16 | 샤프 가부시키가이샤 | 다상 납게르마네이트막 및 퇴적 방법 |
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KR20010061172A (ko) * | 1999-12-28 | 2001-07-07 | 박종섭 | 반도체 소자의 강유전체 캐패시터 제조 방법 |
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US6372034B1 (en) * | 2000-10-12 | 2002-04-16 | Sharp Laboratories Of America, Inc. | PGO solutions for the preparation of PGO thin films via spin coating |
KR100379941B1 (ko) * | 2001-03-06 | 2003-04-11 | 주승기 | 거대 단결정립 강유전체 박막의 제조방법 및 이를 이용한강유전체 기억소자의 제조방법 |
US6503763B2 (en) * | 2001-03-27 | 2003-01-07 | Sharp Laboratories Of America, Inc. | Method of making MFMOS capacitors with high dielectric constant materials |
US6602720B2 (en) * | 2001-03-28 | 2003-08-05 | Sharp Laboratories Of America, Inc. | Single transistor ferroelectric transistor structure with high-K insulator and method of fabricating same |
US6441417B1 (en) * | 2001-03-28 | 2002-08-27 | Sharp Laboratories Of America, Inc. | Single c-axis PGO thin film on ZrO2 for non-volatile memory applications and methods of making the same |
US6531324B2 (en) * | 2001-03-28 | 2003-03-11 | Sharp Laboratories Of America, Inc. | MFOS memory transistor & method of fabricating same |
US6537361B2 (en) * | 2001-03-30 | 2003-03-25 | Sharp Laboratories Of America, Inc. | Method of the synthesis and control of PGO spin-coating precursor solutions |
US6475813B1 (en) * | 2001-08-13 | 2002-11-05 | Sharp Laboratories Of America, Inc. | MOCVD and annealing processes for C-axis oriented ferroelectric thin films |
US20030082909A1 (en) * | 2001-10-30 | 2003-05-01 | Tingkai Li | High-k gate oxides with buffer layers of titanium for MFOS single transistor memory applications |
US6664116B2 (en) * | 2001-12-12 | 2003-12-16 | Sharp Laboratories Of America, Inc. | Seed layer processes for MOCVD of ferroelectric thin films on high-k gate oxides |
US6728093B2 (en) * | 2002-07-03 | 2004-04-27 | Ramtron International Corporation | Method for producing crystallographically textured electrodes for textured PZT capacitors |
JP4578774B2 (ja) * | 2003-01-08 | 2010-11-10 | 富士通株式会社 | 強誘電体キャパシタの製造方法 |
US6825519B2 (en) * | 2003-03-27 | 2004-11-30 | Sharp Laboratories Of America, Inc. | Selectively deposited PGO thin film and method for forming same |
US6794198B1 (en) * | 2003-06-25 | 2004-09-21 | Sharp Laboratories Of America, Inc. | MOCVD selective deposition of c-axis oriented Pb5Ge3O11 thin films on high-k gate oxides |
US7157111B2 (en) * | 2003-09-30 | 2007-01-02 | Sharp Laboratories Of America, Inc. | MOCVD selective deposition of C-axis oriented PB5GE3O11 thin films on In2O3 oxides |
US7531207B2 (en) * | 2004-02-17 | 2009-05-12 | Sharp Laboratories Of America, Inc. | MOCVD PGO thin films deposited on indium oxide for feram applications |
US6897074B1 (en) * | 2004-03-03 | 2005-05-24 | Sharp Laboratories Of America, Inc. | Method for making single-phase c-axis doped PGO ferroelectric thin films |
-
2001
- 2001-12-12 US US10/020,868 patent/US6664116B2/en not_active Expired - Fee Related
-
2002
- 2002-10-21 JP JP2002306350A patent/JP2003203910A/ja active Pending
- 2002-11-07 EP EP06000295A patent/EP1643000A1/de not_active Withdrawn
- 2002-11-07 DE DE60210912T patent/DE60210912T2/de not_active Expired - Lifetime
- 2002-11-07 EP EP02024963A patent/EP1320125B1/de not_active Expired - Lifetime
- 2002-11-08 TW TW091132935A patent/TW567541B/zh not_active IP Right Cessation
- 2002-11-20 KR KR1020020072327A patent/KR100562731B1/ko not_active IP Right Cessation
-
2003
- 2003-06-02 US US10/453,831 patent/US7008801B2/en not_active Expired - Fee Related
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2005
- 2005-10-12 US US11/249,883 patent/US7153708B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE60210912T2 (de) | 2007-04-26 |
EP1643000A1 (de) | 2006-04-05 |
US7008801B2 (en) | 2006-03-07 |
US7153708B2 (en) | 2006-12-26 |
US20030207473A1 (en) | 2003-11-06 |
JP2003203910A (ja) | 2003-07-18 |
US6664116B2 (en) | 2003-12-16 |
EP1320125B1 (de) | 2006-04-26 |
EP1320125A2 (de) | 2003-06-18 |
TW567541B (en) | 2003-12-21 |
KR20030051224A (ko) | 2003-06-25 |
KR100562731B1 (ko) | 2006-03-20 |
EP1320125A3 (de) | 2004-06-16 |
US20030109069A1 (en) | 2003-06-12 |
US20060035390A1 (en) | 2006-02-16 |
TW200300966A (en) | 2003-06-16 |
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