DE60210912D1 - Verfahren zum Bilden von Keimschichten für die Herstellung ferroelektrischer Dünnschichten mittels MOCVD auf Gateoxiden hoher Dielektrizitätskonstanten - Google Patents

Verfahren zum Bilden von Keimschichten für die Herstellung ferroelektrischer Dünnschichten mittels MOCVD auf Gateoxiden hoher Dielektrizitätskonstanten

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Publication number
DE60210912D1
DE60210912D1 DE60210912T DE60210912T DE60210912D1 DE 60210912 D1 DE60210912 D1 DE 60210912D1 DE 60210912 T DE60210912 T DE 60210912T DE 60210912 T DE60210912 T DE 60210912T DE 60210912 D1 DE60210912 D1 DE 60210912D1
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Germany
Prior art keywords
mocvd
fabrication
dielectric constant
thin films
high dielectric
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DE60210912T
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English (en)
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DE60210912T2 (de
Inventor
Tingkai Li
Sheng Teng Hsu
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Sharp Corp
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Sharp Corp
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Publication of DE60210912T2 publication Critical patent/DE60210912T2/de
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  • Chemical Vapour Deposition (AREA)
  • Non-Volatile Memory (AREA)
DE60210912T 2001-12-12 2002-11-07 Verfahren zum Bilden von Keimschichten für die Herstellung ferroelektrischer Dünnschichten mittels MOCVD auf Gateoxiden hoher Dielektrizitätskonstanten Expired - Lifetime DE60210912T2 (de)

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Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6664116B2 (en) * 2001-12-12 2003-12-16 Sharp Laboratories Of America, Inc. Seed layer processes for MOCVD of ferroelectric thin films on high-k gate oxides
JP2004140292A (ja) * 2002-10-21 2004-05-13 Tokyo Electron Ltd 誘電体膜の形成方法
JP4578774B2 (ja) * 2003-01-08 2010-11-10 富士通株式会社 強誘電体キャパシタの製造方法
US6794198B1 (en) * 2003-06-25 2004-09-21 Sharp Laboratories Of America, Inc. MOCVD selective deposition of c-axis oriented Pb5Ge3O11 thin films on high-k gate oxides
US7157111B2 (en) * 2003-09-30 2007-01-02 Sharp Laboratories Of America, Inc. MOCVD selective deposition of C-axis oriented PB5GE3O11 thin films on In2O3 oxides
US7531207B2 (en) * 2004-02-17 2009-05-12 Sharp Laboratories Of America, Inc. MOCVD PGO thin films deposited on indium oxide for feram applications
US20060068099A1 (en) * 2004-09-30 2006-03-30 Sharp Laboratories Of America, Inc. Grading PrxCa1-xMnO3 thin films by metalorganic chemical vapor deposition
KR20060112056A (ko) * 2005-04-26 2006-10-31 주식회사 리 첼 유기금속 화학기상 증착장치를 이용한 아연산화물 박막형성방법
JP4257537B2 (ja) * 2005-06-02 2009-04-22 セイコーエプソン株式会社 強誘電体層の製造方法、電子機器の製造方法、強誘電体メモリ装置の製造方法、圧電素子の製造方法、およびインクジェット式記録ヘッドの製造方法
KR100890609B1 (ko) * 2006-08-23 2009-03-27 재단법인서울대학교산학협력재단 강유전체, 그 제조방법, 및 그 강유전체를 포함하는 반도체 캐패시터와 mems 디바이스
WO2010150134A2 (en) * 2009-06-25 2010-12-29 Lam Research Ag Method for treating a semiconductor wafer
US10276697B1 (en) * 2017-10-27 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Negative capacitance FET with improved reliability performance
US11444203B2 (en) 2019-04-08 2022-09-13 Kepler Computing Inc. Doped polar layers and semiconductor device incorporating same
KR20210057587A (ko) 2019-11-12 2021-05-21 삼성전자주식회사 유전체 물질층을 포함하는 박막 구조체 및 그 제조 방법, 이를 포함하는 전자소자
CN113539812B (zh) * 2021-07-14 2024-04-26 湘潭大学 一种同质种子层调控氧化铪基铁电薄膜电学性能的方法

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5338951A (en) * 1991-11-06 1994-08-16 Ramtron International Corporation Structure of high dielectric constant metal/dielectric/semiconductor capacitor for use as the storage capacitor in memory devices
JP3024747B2 (ja) * 1997-03-05 2000-03-21 日本電気株式会社 半導体メモリの製造方法
KR100275726B1 (ko) * 1997-12-31 2000-12-15 윤종용 강유전체 메모리 장치 및 그 제조 방법
US6172385B1 (en) * 1998-10-30 2001-01-09 International Business Machines Corporation Multilayer ferroelectric capacitor structure
US6190925B1 (en) * 1999-04-28 2001-02-20 Sharp Laboratories Of America, Inc. Epitaxially grown lead germanate film and deposition method
US6281022B1 (en) * 1999-04-28 2001-08-28 Sharp Laboratories Of America, Inc. Multi-phase lead germanate film deposition method
US6410343B1 (en) * 1999-04-28 2002-06-25 Sharp Laboratories Of America, Inc. C-axis oriented lead germanate film and deposition method
KR100365038B1 (ko) * 1999-04-28 2002-12-16 샤프 가부시키가이샤 다상 납게르마네이트막 및 퇴적 방법
US6590243B2 (en) * 1999-04-28 2003-07-08 Sharp Laboratories Of America, Inc. Ferroelastic lead germanate thin film and deposition method
KR20010061172A (ko) * 1999-12-28 2001-07-07 박종섭 반도체 소자의 강유전체 캐패시터 제조 방법
US6303502B1 (en) * 2000-06-06 2001-10-16 Sharp Laboratories Of America, Inc. MOCVD metal oxide for one transistor memory
US6503314B1 (en) * 2000-08-28 2003-01-07 Sharp Laboratories Of America, Inc. MOCVD ferroelectric and dielectric thin films depositions using mixed solvents
US6372034B1 (en) * 2000-10-12 2002-04-16 Sharp Laboratories Of America, Inc. PGO solutions for the preparation of PGO thin films via spin coating
KR100379941B1 (ko) * 2001-03-06 2003-04-11 주승기 거대 단결정립 강유전체 박막의 제조방법 및 이를 이용한강유전체 기억소자의 제조방법
US6503763B2 (en) * 2001-03-27 2003-01-07 Sharp Laboratories Of America, Inc. Method of making MFMOS capacitors with high dielectric constant materials
US6602720B2 (en) * 2001-03-28 2003-08-05 Sharp Laboratories Of America, Inc. Single transistor ferroelectric transistor structure with high-K insulator and method of fabricating same
US6441417B1 (en) * 2001-03-28 2002-08-27 Sharp Laboratories Of America, Inc. Single c-axis PGO thin film on ZrO2 for non-volatile memory applications and methods of making the same
US6531324B2 (en) * 2001-03-28 2003-03-11 Sharp Laboratories Of America, Inc. MFOS memory transistor & method of fabricating same
US6537361B2 (en) * 2001-03-30 2003-03-25 Sharp Laboratories Of America, Inc. Method of the synthesis and control of PGO spin-coating precursor solutions
US6475813B1 (en) * 2001-08-13 2002-11-05 Sharp Laboratories Of America, Inc. MOCVD and annealing processes for C-axis oriented ferroelectric thin films
US20030082909A1 (en) * 2001-10-30 2003-05-01 Tingkai Li High-k gate oxides with buffer layers of titanium for MFOS single transistor memory applications
US6664116B2 (en) * 2001-12-12 2003-12-16 Sharp Laboratories Of America, Inc. Seed layer processes for MOCVD of ferroelectric thin films on high-k gate oxides
US6728093B2 (en) * 2002-07-03 2004-04-27 Ramtron International Corporation Method for producing crystallographically textured electrodes for textured PZT capacitors
JP4578774B2 (ja) * 2003-01-08 2010-11-10 富士通株式会社 強誘電体キャパシタの製造方法
US6825519B2 (en) * 2003-03-27 2004-11-30 Sharp Laboratories Of America, Inc. Selectively deposited PGO thin film and method for forming same
US6794198B1 (en) * 2003-06-25 2004-09-21 Sharp Laboratories Of America, Inc. MOCVD selective deposition of c-axis oriented Pb5Ge3O11 thin films on high-k gate oxides
US7157111B2 (en) * 2003-09-30 2007-01-02 Sharp Laboratories Of America, Inc. MOCVD selective deposition of C-axis oriented PB5GE3O11 thin films on In2O3 oxides
US7531207B2 (en) * 2004-02-17 2009-05-12 Sharp Laboratories Of America, Inc. MOCVD PGO thin films deposited on indium oxide for feram applications
US6897074B1 (en) * 2004-03-03 2005-05-24 Sharp Laboratories Of America, Inc. Method for making single-phase c-axis doped PGO ferroelectric thin films

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DE60210912T2 (de) 2007-04-26
EP1643000A1 (de) 2006-04-05
US7008801B2 (en) 2006-03-07
US7153708B2 (en) 2006-12-26
US20030207473A1 (en) 2003-11-06
JP2003203910A (ja) 2003-07-18
US6664116B2 (en) 2003-12-16
EP1320125B1 (de) 2006-04-26
EP1320125A2 (de) 2003-06-18
TW567541B (en) 2003-12-21
KR20030051224A (ko) 2003-06-25
KR100562731B1 (ko) 2006-03-20
EP1320125A3 (de) 2004-06-16
US20030109069A1 (en) 2003-06-12
US20060035390A1 (en) 2006-02-16
TW200300966A (en) 2003-06-16

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