DE60201999D1 - Jochart niedertemperatur-tunnelventilsensor - Google Patents

Jochart niedertemperatur-tunnelventilsensor

Info

Publication number
DE60201999D1
DE60201999D1 DE60201999T DE60201999T DE60201999D1 DE 60201999 D1 DE60201999 D1 DE 60201999D1 DE 60201999 T DE60201999 T DE 60201999T DE 60201999 T DE60201999 T DE 60201999T DE 60201999 D1 DE60201999 D1 DE 60201999D1
Authority
DE
Germany
Prior art keywords
sensor
tunnel valve
yoke
copper structure
valve sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60201999T
Other languages
English (en)
Other versions
DE60201999T2 (de
Inventor
Singh Gill
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE60201999D1 publication Critical patent/DE60201999D1/de
Application granted granted Critical
Publication of DE60201999T2 publication Critical patent/DE60201999T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127Structure or manufacture of heads, e.g. inductive
    • G11B5/33Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127Structure or manufacture of heads, e.g. inductive
    • G11B5/33Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3909Arrangements using a magnetic tunnel junction
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127Structure or manufacture of heads, e.g. inductive
    • G11B5/33Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3916Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide
    • G11B5/3919Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127Structure or manufacture of heads, e.g. inductive
    • G11B5/33Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3916Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide
    • G11B5/3919Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path
    • G11B5/3922Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure
    • G11B5/3925Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure the two parts being thin films
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127Structure or manufacture of heads, e.g. inductive
    • G11B5/33Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3967Composite structural arrangements of transducers, e.g. inductive write and magnetoresistive read
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127Structure or manufacture of heads, e.g. inductive
    • G11B5/33Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127Structure or manufacture of heads, e.g. inductive
    • G11B5/31Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3109Details
    • G11B5/313Disposition of layers
    • G11B5/3133Disposition of layers including layers not usually being a part of the electromagnetic transducer structure and providing additional features, e.g. for improving heat radiation, reduction of power dissipation, adaptations for measurement or indication of gap depth or other properties of the structure
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/40Protective measures on heads, e.g. against excessive temperature 

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Magnetic Heads (AREA)
  • Hall/Mr Elements (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
DE60201999T 2001-06-11 2002-05-30 Jochart niedertemperatur-tunnelventilsensor Expired - Lifetime DE60201999T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US878817 2001-06-11
US09/878,817 US6724587B2 (en) 2001-06-11 2001-06-11 Low temperature yoke type tunnel valve sensor
PCT/GB2002/002667 WO2002101731A2 (en) 2001-06-11 2002-05-30 Low temperature yoke type tunnel valve sensor

Publications (2)

Publication Number Publication Date
DE60201999D1 true DE60201999D1 (de) 2004-12-23
DE60201999T2 DE60201999T2 (de) 2006-03-02

Family

ID=25372908

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60201999T Expired - Lifetime DE60201999T2 (de) 2001-06-11 2002-05-30 Jochart niedertemperatur-tunnelventilsensor

Country Status (8)

Country Link
US (1) US6724587B2 (de)
EP (1) EP1405304B1 (de)
JP (1) JP3954020B2 (de)
KR (1) KR100625059B1 (de)
CN (1) CN1302463C (de)
AT (1) ATE282884T1 (de)
DE (1) DE60201999T2 (de)
WO (1) WO2002101731A2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004005763A (ja) * 2002-04-10 2004-01-08 Tdk Corp 薄膜磁気ヘッドおよびその製造方法ならびに磁気ディスク装置
US7064934B2 (en) * 2003-06-12 2006-06-20 Seagate Technology Llc Magnetoresistive sensor with reduced operating temperature
JP2005209301A (ja) * 2004-01-23 2005-08-04 Hitachi Global Storage Technologies Netherlands Bv 磁気ヘッド及びその製造方法
JP2005293762A (ja) * 2004-04-02 2005-10-20 Tdk Corp 複合型薄膜磁気ヘッド
US7290325B2 (en) * 2004-08-13 2007-11-06 Quantum Corporation Methods of manufacturing magnetic heads with reference and monitoring devices
US7751154B2 (en) * 2005-05-19 2010-07-06 Quantum Corporation Magnetic recording heads with bearing surface protections and methods of manufacture
US20060273066A1 (en) * 2005-06-01 2006-12-07 Hitachi Global Storage Technologies Method for manufacturing a magnetic sensor having an ultra-narrow track width
US7616411B2 (en) * 2006-03-28 2009-11-10 Hitachi Global Storage Technologies Netherlands B.V. Current perpendicular to plane (CPP) magnetoresistive sensor having a flux guide structure and synthetic free layer
US8274761B2 (en) * 2010-03-05 2012-09-25 Tdk Corporation Magnetic head including a thermal asperity effect element sensor in a stepped-back position from an air bearing surface
US8619393B2 (en) * 2011-08-16 2013-12-31 Seagate Technology Llc Devices and methods using recessed electron spin analyzers
US9001473B1 (en) 2014-03-21 2015-04-07 HGST Netherlands B.V. TMR/CPP reader for narrow reader gap application
US9007729B1 (en) 2014-04-29 2015-04-14 HGST Netherlands B.V. Reader sensor having a recessed antiferromagnetic (AFM) pinning layer
US10311901B1 (en) * 2018-05-30 2019-06-04 Western Digital Technologies, Inc. Anisotropy field induced self pinned recessed antiferromagnetic reader
US11125840B2 (en) * 2020-02-18 2021-09-21 Western Digital Technologies, Inc. Ultra-low RA and high TMR magnetic sensor with radiation reflective lead

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4291351A (en) 1979-11-28 1981-09-22 International Business Machines Corporation Flux extender or guide for magnetic read head having a magnetoresistive flux sensor
JP3186132B2 (ja) * 1991-10-18 2001-07-11 ソニー株式会社 磁気抵抗効果型磁気ヘッド
KR100225179B1 (ko) 1992-11-30 1999-10-15 니시무로 타이죠 박막 자기 헤드 및 자기 저항 효과형 헤드
US5508868A (en) 1993-01-25 1996-04-16 Read-Rite Corporation Dual element magnetoresistive sensing head having in-gap flux guide and flux closure piece with particular connection of magnetoresistive sensing elements to differential amplifier
US5486967A (en) * 1993-03-15 1996-01-23 Kabushiki Kaisha Toshiba Magnetic disk memory system
EP0731969B1 (de) 1994-10-05 1999-12-01 Koninklijke Philips Electronics N.V. Magnetische mehrlagenanordnung, die eine doppelbarrierenstruktur mit resonantem tunneleffekt enthält
JPH08115511A (ja) 1994-10-14 1996-05-07 Hitachi Ltd フラックスガイド型gmrヘッド
US5493467A (en) * 1994-12-27 1996-02-20 International Business Machines Corporation Yoke spin valve MR read head
US5627704A (en) 1996-02-12 1997-05-06 Read-Rite Corporation Thin film giant magnetoresistive CPP transducer with flux guide yoke structure
JPH09270544A (ja) 1996-03-29 1997-10-14 Sony Corp 巨大磁気抵抗効果素子
EP0801380A3 (de) 1996-04-10 1998-03-04 Read-Rite Corporation Riesenmagnetoresistive Wandler mit erhöhtem Ausgangssignal
US5930084A (en) 1996-06-17 1999-07-27 International Business Machines Corporation Stabilized MR sensor and flux guide joined by contiguous junction
EP0831541A3 (de) 1996-09-19 1999-05-06 TDK Corporation Ferromagnetischer Tunnelübergang, magnetoresistives Element und Magnetkopf
US5751521A (en) * 1996-09-23 1998-05-12 International Business Machines Corporation Differential spin valve sensor structure
US6064552A (en) 1997-03-18 2000-05-16 Kabushiki Kaisha Toshiba Magnetoresistive head having magnetic yoke and giant magnetoresistive element such that a first electrode is formed on the giant magnetoresistive element which in turn is formed on the magnetic yoke which acts as a second electrode
JPH10334418A (ja) * 1997-06-03 1998-12-18 Mitsubishi Electric Corp 磁気ヘッドおよびその製法ならびに該磁気ヘッドを用いた磁気記録装置
US5898547A (en) 1997-10-24 1999-04-27 International Business Machines Corporation Magnetic tunnel junction magnetoresistive read head with sensing layer as flux guide
EP0948788B1 (de) 1997-10-29 2004-07-14 Koninklijke Philips Electronics N.V. Magnetfeldsensor mit spin tunnelübergang
US5930087A (en) 1997-11-20 1999-07-27 Hewlett-Packard Company Robust recording head for near-contact operation
JPH11232610A (ja) * 1997-12-12 1999-08-27 Tdk Corp 薄膜磁気ヘッド
JPH11353625A (ja) 1998-06-08 1999-12-24 Victor Co Of Japan Ltd ヨークタイプ磁気抵抗効果型磁気ヘッド
US6396670B1 (en) * 1998-07-21 2002-05-28 Seagate Technology Llc Reducing sensor temperature in magnetoresistive recording heads
JP3204223B2 (ja) 1998-09-01 2001-09-04 日本電気株式会社 情報再生ヘッド装置及び情報記録再生システム
US6552882B1 (en) * 1998-09-01 2003-04-22 Nec Corporation Information reproduction head apparatus and information recording/reproduction system
JP2000076628A (ja) 1998-09-01 2000-03-14 Nec Corp 情報再生ヘッド装置及び情報記録再生システム
JP2000099934A (ja) * 1998-09-25 2000-04-07 Fujitsu Ltd 磁気記録媒体および磁気記録装置
JP3462832B2 (ja) * 2000-04-06 2003-11-05 株式会社日立製作所 磁気抵抗センサ並びにこれを用いた磁気ヘッド及び磁気記録再生装置
JP2001344714A (ja) * 2000-06-02 2001-12-14 Nippon Hoso Kyokai <Nhk> 強磁性トンネル効果型磁気ヘッド

Also Published As

Publication number Publication date
EP1405304B1 (de) 2004-11-17
US6724587B2 (en) 2004-04-20
JP3954020B2 (ja) 2007-08-08
WO2002101731A3 (en) 2003-05-22
KR100625059B1 (ko) 2006-09-20
ATE282884T1 (de) 2004-12-15
CN1513169A (zh) 2004-07-14
CN1302463C (zh) 2007-02-28
US20020186515A1 (en) 2002-12-12
EP1405304A2 (de) 2004-04-07
DE60201999T2 (de) 2006-03-02
KR20040008220A (ko) 2004-01-28
JP2004529454A (ja) 2004-09-24
WO2002101731A2 (en) 2002-12-19

Similar Documents

Publication Publication Date Title
DE60201999D1 (de) Jochart niedertemperatur-tunnelventilsensor
WO2002063658A3 (en) Self aligned, magnetoresitive random-access memory (mram) structure utilizing a spacer containment scheme
TW201834196A (zh) 包括分級配置的殼體的電源模組
HUP0104499A2 (hu) Mágneses írófej
MY147999A (en) Surface mountable chip
ATE463843T1 (de) Infrarotdetektor mit unabhängigem, leitfähigem 3d-gate
JP2008523578A5 (de)
TW200610016A (en) Semiconductor device
TW200701264A (en) Inductor
JP2002521777A (ja) 磁気抵抗性記録ヘッドのセンサ温度の低減
CA1196093A (en) Integrated magnetostrictive-piezoresistive magnetic recording playback head
EA200501238A1 (ru) Способ изготовления электропроводящего рисунка
JP2006209964A5 (de)
JP2002526909A (ja) 電流密度の小さい磁気抵抗型メモリ
AU2003236796A1 (en) Fingerprint recognition module having a thin-film structure and comprising resistive, temperature-sensitive elements
TW200603354A (en) Circuit device and method for manufacturing thereof
TW200728735A (en) Methods of implementing magnetic tunnel junction current sensors
TW200507241A (en) Method for manufacturing a magnetic memory device, and a magnetic memory device
TW200501838A (en) Hybrid integrated circuit device
US7320168B2 (en) Method to improve heat dissipation in a magnetic shield
JP2005502052A5 (de)
ATE341799T1 (de) Datenträger mit transponderspule
DE202005001163U1 (de) Leiterplatte oder Platine mit Heizdraht
TW200718931A (en) A temperature sensing device
EP2031608A3 (de) Magnetoresistives Element, Magnetkopf und Magnetisches Aufnahme- / Wiedergabegerät

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)