DE602006020093D1 - Verfahren zur Herstellung eines ZnO-Dünnfilms bei niedrigen Temperaturen - Google Patents

Verfahren zur Herstellung eines ZnO-Dünnfilms bei niedrigen Temperaturen

Info

Publication number
DE602006020093D1
DE602006020093D1 DE602006020093T DE602006020093T DE602006020093D1 DE 602006020093 D1 DE602006020093 D1 DE 602006020093D1 DE 602006020093 T DE602006020093 T DE 602006020093T DE 602006020093 T DE602006020093 T DE 602006020093T DE 602006020093 D1 DE602006020093 D1 DE 602006020093D1
Authority
DE
Germany
Prior art keywords
thin film
zinc oxide
oxide thin
substrate
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006020093T
Other languages
English (en)
Inventor
Takashi Matsumoto
Chitake Imazu
Shigeru Hagihara
Kazuhiro Kijima
Osamu Abe
Satoshi Hiraki
Yuichiro Fujikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nakaya Ltd
Yamanashi Prefecture
University of Yamanashi NUC
Original Assignee
Nakaya Ltd
Yamanashi Prefecture
University of Yamanashi NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nakaya Ltd, Yamanashi Prefecture, University of Yamanashi NUC filed Critical Nakaya Ltd
Publication of DE602006020093D1 publication Critical patent/DE602006020093D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0026—Activation or excitation of reactive gases outside the coating chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/1266—O, S, or organic compound in metal component
    • Y10T428/12667—Oxide of transition metal or Al

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Glass Compositions (AREA)
DE602006020093T 2005-08-18 2006-03-17 Verfahren zur Herstellung eines ZnO-Dünnfilms bei niedrigen Temperaturen Active DE602006020093D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005237141 2005-08-18

Publications (1)

Publication Number Publication Date
DE602006020093D1 true DE602006020093D1 (de) 2011-03-31

Family

ID=36581936

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006020093T Active DE602006020093D1 (de) 2005-08-18 2006-03-17 Verfahren zur Herstellung eines ZnO-Dünnfilms bei niedrigen Temperaturen

Country Status (7)

Country Link
US (1) US7744965B2 (de)
EP (1) EP1755154B1 (de)
JP (1) JP5396579B2 (de)
KR (1) KR20080037716A (de)
AT (1) ATE498902T1 (de)
DE (1) DE602006020093D1 (de)
WO (1) WO2007020729A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4296523B2 (ja) * 2007-09-28 2009-07-15 勝 堀 プラズマ発生装置
US8147599B2 (en) 2009-02-17 2012-04-03 Mcalister Technologies, Llc Apparatuses and methods for storing and/or filtering a substance
KR101384404B1 (ko) * 2011-05-13 2014-04-10 강원대학교산학협력단 산화아연 나노시트 생성방법
WO2014145882A1 (en) * 2013-03-15 2014-09-18 Mcalister Technologies, Llc Methods of manufacture of engineered materials and devices
WO2014194124A1 (en) 2013-05-29 2014-12-04 Mcalister Technologies, Llc Methods for fuel tank recycling and net hydrogen fuel and carbon goods production along with associated apparatus and systems
JP6306437B2 (ja) * 2014-05-31 2018-04-04 国立大学法人山梨大学 縦型成膜装置
EP3803960B1 (de) 2018-06-07 2023-11-08 Silanna UV Technologies Pte Ltd Optoelektronisches bauteil
CN109402566B (zh) * 2018-12-18 2021-03-26 深圳先进技术研究院 一种两步法制备柔性氧化钒薄膜的方法
US11512389B2 (en) 2019-03-20 2022-11-29 Samsung Electronincs Co., Ltd. Apparatus for and method of manufacturing semiconductor device
GB201913533D0 (en) * 2019-09-19 2019-11-06 Univ Southampton Optical thin films and fabrication thereof
KR102336228B1 (ko) 2020-04-06 2021-12-09 티오에스주식회사 챔버 분리형 에피 성장 장치

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61132902A (ja) * 1984-11-30 1986-06-20 Osaka Tokushu Gokin Kk 紫外線及び赤外線透過阻止用透明材料
JP2696874B2 (ja) 1988-02-04 1998-01-14 株式会社ブリヂストン 熱線遮蔽材料及び熱線遮蔽ガラス
US5811050A (en) * 1994-06-06 1998-09-22 Gabower; John F. Electromagnetic interference shield for electronic devices
US6110544A (en) * 1997-06-26 2000-08-29 General Electric Company Protective coating by high rate arc plasma deposition
JP3424814B2 (ja) * 1999-08-31 2003-07-07 スタンレー電気株式会社 ＺｎＯ結晶構造及びそれを用いた半導体装置
JP3953238B2 (ja) 1999-09-01 2007-08-08 独立行政法人科学技術振興機構 強磁性ｐ型単結晶酸化亜鉛およびその製造方法
JP2001271167A (ja) 2000-03-24 2001-10-02 Okura Ind Co Ltd 酸化亜鉛薄膜の形成方法
JP2002020884A (ja) * 2000-07-04 2002-01-23 Canon Inc 酸化亜鉛積層薄膜体およびその製造方法
JP3904378B2 (ja) * 2000-08-02 2007-04-11 ローム株式会社 酸化亜鉛透明導電膜
WO2002016679A1 (fr) 2000-08-18 2002-02-28 Tohoku Techno Arch Co., Ltd. Matiere semi-conductrice polycristalline
JP4447756B2 (ja) * 2000-08-28 2010-04-07 独立行政法人産業技術総合研究所 ラジカルセル装置およびｉｉ−ｖｉ族化合物半導体装置の製法
JP4540201B2 (ja) * 2000-09-13 2010-09-08 独立行政法人産業技術総合研究所 ＺｎＯ系酸化物半導体層を有する半導体装置の製法
FR2818009B1 (fr) * 2000-12-07 2003-03-28 Teherani Ferechteh Hosseini Procede de realisation d'un semiconducteur a large bande interdite dope positivement
JP2003089875A (ja) 2001-09-14 2003-03-28 Okura Ind Co Ltd 酸化亜鉛薄膜の形成方法
EP1339082A1 (de) * 2002-02-25 2003-08-27 Asahi Glass Company Ltd. Schlagfester Film für eine flache Anzeigetafel, und flache Anzeigetafel
JP2003316276A (ja) * 2002-02-25 2003-11-07 Matsushita Electric Ind Co Ltd 平面型ディスプレイパネル用耐衝撃フィルム及び平面型ディスプレイパネル
JP3849012B2 (ja) 2002-03-04 2006-11-22 独立行政法人物質・材料研究機構 酸化亜鉛薄膜の低圧低温気相合成方法
JP4268405B2 (ja) * 2002-12-20 2009-05-27 スタンレー電気株式会社 ＺｎＯ結晶の成長方法、ＺｎＯ結晶構造及びそれを用いた半導体装置
JP4252809B2 (ja) * 2003-01-15 2009-04-08 スタンレー電気株式会社 ＺｎＯ結晶の製造方法及びＺｎＯ系ＬＥＤの製造方法
JP2005237141A (ja) 2004-02-20 2005-09-02 Toyota Motor Corp インバータおよびインバータの製造方法
JP5291928B2 (ja) * 2007-12-26 2013-09-18 株式会社日立製作所 酸化物半導体装置およびその製造方法

Also Published As

Publication number Publication date
US20070042216A1 (en) 2007-02-22
EP1755154B1 (de) 2011-02-16
JP5396579B2 (ja) 2014-01-22
ATE498902T1 (de) 2011-03-15
EP1755154A1 (de) 2007-02-21
KR20080037716A (ko) 2008-04-30
WO2007020729A1 (ja) 2007-02-22
US7744965B2 (en) 2010-06-29
JPWO2007020729A1 (ja) 2009-02-19

Similar Documents

Publication Publication Date Title
DE602006020093D1 (de) Verfahren zur Herstellung eines ZnO-Dünnfilms bei niedrigen Temperaturen
Lee et al. Synthesis of wafer-scale uniform molybdenum disulfide films with control over the layer number using a gas phase sulfur precursor
Nam et al. Growth characteristics and properties of Ga-doped ZnO (GZO) thin films grown by thermal and plasma-enhanced atomic layer deposition
CN109922952A (zh) 用于片材结合的硅氧烷等离子体聚合物
DE3856227D1 (de) Polysilicium-dünnfilm-verfahren
CN109205677B (zh) 一种一维MoS2纳米带的制备方法
Gupta et al. Impact of rapid thermal annealing on structural, optical and electrical properties of DC sputtered doped and co-doped ZnO thin film
Han et al. Atomic layer deposition of indium oxide thin film from a liquid indium complex containing 1-dimethylamino-2-methyl-2-propoxy ligands
JP6129246B2 (ja) ＵＶ援用型化学蒸着によるポリマー基板上へのドープＺｎＯ膜の被着
CN109440081B (zh) 一种基于化学气相沉积法制备磁性石墨烯薄膜的方法
Li et al. Effects of growth temperature on electrical and structural properties of sputtered GaN films with a cermet target
Yang et al. Growth of monolayer MoS2 films in a quasi-closed crucible encapsulated substrates by chemical vapor deposition
KR101915635B1 (ko) 유연 기판 상으로 금속 칼코게나이드 박막을 전사하는 방법
Liu et al. Improvement of crystal quality and UV transparence of dielectric Ga 2 O 3 thin films via thermal annealing in N 2 atmosphere
Jeon et al. Growth behaviors and film properties of zinc oxide grown by atmospheric mist chemical vapor deposition
Kong et al. Characterization of single-crystalline In2O3 films deposited on y-stabilized ZrO2 (1 0 0) substrates by MOCVD
JP2015124117A (ja) 金属酸化物薄膜の製造方法
CN105734528A (zh) 一种基于脉冲气流法生长层状二硫化钼薄膜的方法
Kang et al. The role of a ZnO buffer layer in the growth of ZnO thin film on Al2O3 substrate
JP6175948B2 (ja) グラフェンの製造方法
Liu et al. Degenerated MgZnO films obtained by excessive zinc
Hirano et al. ZnO epitaxial films grown by flux-modulated RF-MBE
Samuel et al. Sol gel Spin coated ZnO thin films for biosensing applications
Yan et al. Properties of In-N doped ZnO films synthesized by ion beam assisted deposition
Kim et al. MOCVD growth and annealing of gallium oxide thin film and its structural characterization