DE602006015428D1 - Hie - Google Patents

Hie

Info

Publication number
DE602006015428D1
DE602006015428D1 DE602006015428T DE602006015428T DE602006015428D1 DE 602006015428 D1 DE602006015428 D1 DE 602006015428D1 DE 602006015428 T DE602006015428 T DE 602006015428T DE 602006015428 T DE602006015428 T DE 602006015428T DE 602006015428 D1 DE602006015428 D1 DE 602006015428D1
Authority
DE
Germany
Prior art keywords
topcoat material
water
topcoat
polymer
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006015428T
Other languages
German (de)
English (en)
Inventor
Robert David Allen
Phillip Joe Brock
Dario Gil
William Dinan Hinsberg
Carl Eric Larson
Linda Karin Sundberg
Gregory Michael Wallraff
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE602006015428D1 publication Critical patent/DE602006015428D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/108—Polyolefin or halogen containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Paints Or Removers (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Bipolar Transistors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE602006015428T 2005-02-23 2006-02-22 Hie Active DE602006015428D1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/063,940 US7288362B2 (en) 2005-02-23 2005-02-23 Immersion topcoat materials with improved performance
PCT/US2006/006225 WO2006091648A2 (en) 2005-02-23 2006-02-22 Immersion topcoat materials with improved performance

Publications (1)

Publication Number Publication Date
DE602006015428D1 true DE602006015428D1 (en) 2010-08-26

Family

ID=36913114

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006015428T Active DE602006015428D1 (en) 2005-02-23 2006-02-22 Hie

Country Status (8)

Country Link
US (2) US7288362B2 (enExample)
EP (1) EP1851589B1 (enExample)
JP (1) JP5046236B2 (enExample)
CN (1) CN101164013B (enExample)
AT (1) ATE474249T1 (enExample)
DE (1) DE602006015428D1 (enExample)
TW (1) TWI397773B (enExample)
WO (1) WO2006091648A2 (enExample)

Families Citing this family (28)

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TWI297809B (enExample) * 2001-10-24 2008-06-11 Toyo Boseki
US7473512B2 (en) * 2004-03-09 2009-01-06 Az Electronic Materials Usa Corp. Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof
JP4355944B2 (ja) * 2004-04-16 2009-11-04 信越化学工業株式会社 パターン形成方法及びこれに用いるレジスト上層膜材料
JP4697406B2 (ja) * 2004-08-05 2011-06-08 信越化学工業株式会社 高分子化合物，レジスト保護膜材料及びパターン形成方法
JP4621451B2 (ja) * 2004-08-11 2011-01-26 富士フイルム株式会社 液浸露光用保護膜形成組成物及びそれを用いたパターン形成方法
US7358035B2 (en) * 2005-06-23 2008-04-15 International Business Machines Corporation Topcoat compositions and methods of use thereof
JP5055743B2 (ja) * 2005-11-04 2012-10-24 セントラル硝子株式会社 含フッ素高分子コーティング用組成物、該コーティング用組成物を用いた含フッ素高分子膜の形成方法、ならびにフォトレジストまたはリソグラフィーパターンの形成方法。
US20070117040A1 (en) * 2005-11-21 2007-05-24 International Business Machines Corporation Water castable-water strippable top coats for 193 nm immersion lithography
JP5151038B2 (ja) * 2006-02-16 2013-02-27 富士通株式会社 レジストカバー膜形成材料、レジストパターンの形成方法、半導体装置及びその製造方法
US8034532B2 (en) 2006-04-28 2011-10-11 International Business Machines Corporation High contact angle topcoat material and use thereof in lithography process
US7951524B2 (en) * 2006-04-28 2011-05-31 International Business Machines Corporation Self-topcoating photoresist for photolithography
US8945808B2 (en) * 2006-04-28 2015-02-03 International Business Machines Corporation Self-topcoating resist for photolithography
US7521172B2 (en) * 2006-04-28 2009-04-21 International Business Machines Corporation Topcoat material and use thereof in immersion lithography processes
US20080311530A1 (en) * 2007-06-15 2008-12-18 Allen Robert D Graded topcoat materials for immersion lithography
JP5075516B2 (ja) * 2007-07-25 2012-11-21 株式会社ダイセル レジスト保護膜用重合体溶液の製造方法
US8003309B2 (en) * 2008-01-16 2011-08-23 International Business Machines Corporation Photoresist compositions and methods of use in high index immersion lithography
JP5010569B2 (ja) * 2008-01-31 2012-08-29 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
US8084193B2 (en) * 2008-07-12 2011-12-27 International Business Machines Corporation Self-segregating multilayer imaging stack with built-in antireflective properties
US8541523B2 (en) * 2010-04-05 2013-09-24 Promerus, Llc Norbornene-type polymers, compositions thereof and lithographic process using such compositions
KR101099506B1 (ko) 2010-11-17 2011-12-27 주식회사 동진쎄미켐 고분자 화합물 및 이를 포함하는 액침 노광 프로세스용 레지스트 보호막 조성물
US8476004B2 (en) 2011-06-27 2013-07-02 United Microelectronics Corp. Method for forming photoresist patterns
US8701052B1 (en) 2013-01-23 2014-04-15 United Microelectronics Corp. Method of optical proximity correction in combination with double patterning technique
KR102200511B1 (ko) 2013-01-24 2021-01-11 닛산 가가쿠 가부시키가이샤 리소그래피용 레지스트 상층막 형성 조성물 및 이것을 이용한 반도체장치의 제조방법
US8627242B1 (en) 2013-01-30 2014-01-07 United Microelectronics Corp. Method for making photomask layout
US9230812B2 (en) 2013-05-22 2016-01-05 United Microelectronics Corp. Method for forming semiconductor structure having opening
JP6519753B2 (ja) 2014-02-26 2019-05-29 日産化学株式会社 レジスト上層膜形成組成物及びそれを用いた半導体装置の製造方法
WO2017062822A1 (en) * 2015-10-09 2017-04-13 Illinois Tool Works Inc. Surface appearance simulation system and method
US11993091B2 (en) * 2021-03-12 2024-05-28 Darin A. Grassman Methods and apparatus for hand printing designs and patterns

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JPH0936017A (ja) * 1995-07-20 1997-02-07 Hitachi Ltd パタン形成方法及びそれを用いた半導体素子の製造方法
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JP2003345026A (ja) 2002-05-24 2003-12-03 Tokyo Ohka Kogyo Co Ltd 反射防止膜形成用塗布液組成物およびこれを用いたホトレジスト積層体、並びにホトレジストパターンの形成方法
JP3851594B2 (ja) 2002-07-04 2006-11-29 Ａｚエレクトロニックマテリアルズ株式会社 反射防止コーティング用組成物およびパターン形成方法
JP4410508B2 (ja) * 2002-08-07 2010-02-03 セントラル硝子株式会社 含フッ素化合物とその高分子化合物
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WO2004108769A2 (en) * 2003-06-06 2004-12-16 Georgia Tech Research Corporation Composition and method of use thereof
JP2005045083A (ja) * 2003-07-24 2005-02-17 Sony Corp 露光方法
JP4376718B2 (ja) * 2003-07-28 2009-12-02 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置、デバイス製造方法、及び基板
KR101163095B1 (ko) * 2003-12-23 2012-07-06 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 표면 조사 방법, 감광 층을 패터닝하는 방법, 제거가능한 보호 층의 제거 방법 및 블랭크
US20050202351A1 (en) * 2004-03-09 2005-09-15 Houlihan Francis M. Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof
JP4484603B2 (ja) * 2004-03-31 2010-06-16 セントラル硝子株式会社 トップコート組成物
JP4355944B2 (ja) * 2004-04-16 2009-11-04 信越化学工業株式会社 パターン形成方法及びこれに用いるレジスト上層膜材料
JP4697406B2 (ja) * 2004-08-05 2011-06-08 信越化学工業株式会社 高分子化合物，レジスト保護膜材料及びパターン形成方法

Also Published As

Publication number Publication date
EP1851589A4 (en) 2009-08-19
JP5046236B2 (ja) 2012-10-10
WO2006091648A3 (en) 2007-11-22
ATE474249T1 (de) 2010-07-15
TWI397773B (zh) 2013-06-01
US7288362B2 (en) 2007-10-30
WO2006091648A2 (en) 2006-08-31
US20060188804A1 (en) 2006-08-24
EP1851589A2 (en) 2007-11-07
TW200643636A (en) 2006-12-16
US7855045B2 (en) 2010-12-21
EP1851589B1 (en) 2010-07-14
US20080026330A1 (en) 2008-01-31
JP2008532067A (ja) 2008-08-14
CN101164013B (zh) 2010-11-03
CN101164013A (zh) 2008-04-16

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Legal Events

Date Code Title Description
8320 Willingness to grant licences declared (paragraph 23)